Abstract: It is described a composition comprising lyophilized rhAnnexin V-128 suitable for the preparation of 99mTc-rhAnnexin V-128 formulations suitable for intravenous administration.

Abstract: A method for forming a semiconductor device includes forming a laser marking buried within a semiconductor substrate and thinning the semiconductor substrate from a backside of the semiconductor substrate. For example, a semiconductor device includes a semiconductor substrate located in a semiconductor package. A laser marking is buried within the semiconductor substrate. For example, another semiconductor device includes a semiconductor substrate. A laser marking is located at a backside surface of the semiconductor substrate. Further, a portion of the backside surface located adjacent to the laser marking is free of recast material.

Abstract: It is described a composition comprising lyophilized rhAnnexin V-128 suitable for the preparation of 99mTc-rhAnnexin V-128 formulations suitable for intravenous administration.

Abstract: A circumferential embedded structure is formed by laser irradiation in a semiconductor substrate, which is of a semiconductor material. The embedded structure includes a polycrystalline structure of the semiconductor material, and surrounds a central portion of a semiconductor die. The semiconductor die including the embedded structure is separated from the semiconductor substrate.

Abstract: Chromatography columns for the purification of eluates from 68Ge/68Ga generators comprising silica as stationary phase and purification processes that use said columns are described.

Abstract: A method of manufacturing electronic dies by separating a wafer into electronic dies, wherein the method comprises forming a groove in the wafer with a first material removal tool having a first thickness, enlarging the groove by a second material removal tool having a second thickness larger than the first thickness, and subsequently increasing a depth of the groove by a third material removal tool having a third thickness smaller than the second thickness until the wafer is separated.

Abstract: Separation grooves are etched from a main surface into a semiconductor substrate. The separation grooves separate chip regions in horizontal directions parallel to the main surface. At least some of the separation grooves are spaced from a lateral outer surface of the semiconductor substrate by at most a first distance. An indentation is formed along a lateral surface. The indentation extends from the main surface into the semiconductor substrate. A minimum horizontal indentation width of the indentation is equal to or greater than the first distance. A with respect to the main surface vertical extension of the indentation is equal to or greater than a vertical extension of the separation grooves.

Abstract: A method of manufacturing electronic dies by separating a wafer into electronic dies, wherein the method comprises forming a groove in the wafer with a first material removal tool having a first thickness, enlarging the groove by a second material removal tool having a second thickness larger than the first thickness, and subsequently increasing a depth of the groove by a third material removal tool having a third thickness smaller than the second thickness until the wafer is separated.

Abstract: Separation grooves are etched from a main surface into a semiconductor substrate. The separation grooves separate chip regions in horizontal directions parallel to the main surface. At least some of the separation grooves are spaced from a lateral outer surface of the semiconductor substrate by at most a first distance. An indentation is formed along a lateral surface. The indentation extends from the main surface into the semiconductor substrate. A minimum horizontal indentation width of the indentation is equal to or greater than the first distance. A with respect to the main surface vertical extension of the indentation is equal to or greater than a vertical extension of the separation grooves.

Abstract: Methods and apparatuses are provided where a parting agent is applied to at least one portion of a substrate. The at least one portion of the substrate is removed from a carrier.

Abstract: A circumferential embedded structure is formed by laser irradiation in a semiconductor substrate, which is of a semiconductor material. The embedded structure includes a polycrystalline structure of the semiconductor material, and surrounds a central portion of a semiconductor die. The semiconductor die including the embedded structure is separated from the semiconductor substrate.

Abstract: Separation grooves are etched from a main surface into a semiconductor substrate. The separation grooves separate chip regions in horizontal directions parallel to the main surface. At least some of the separation grooves are spaced from a lateral outer surface of the semiconductor substrate by at most a first distance. An indentation is formed along a lateral surface. The indentation extends from the main surface into the semiconductor substrate. A minimum horizontal indentation width of the indentation is equal to or greater than the first distance. A with respect to the main surface vertical extension of the indentation is equal to or greater than a vertical extension of the separation grooves.

Abstract: A process for the preparation of complexes containing 68Ga wherein a buffer formic acid/formate in the presence of compounds capable to sequester metal cations is used in the complexation reaction.

Abstract: A carrier tape comprises a flexible body portion having a top surface. The flexible body portion comprises a plurality of pockets. Each of the plurality of pockets comprises pocket side walls, a base bottom portion fully circulating a raised bottom portion of a pedestal. The pedestal is made up of the raised bottom portion and pedestal side walls. The pedestal sidewalls, the base bottom portion and a lower part of the pocket side walls constitute a trench fully circulating the pedestal.

Abstract: Chromatography columns for the purification of eluates from 68Ge/68Ga generators comprising silica as stationary phase and purification processes that use said columns are described.

Abstract: A method for forming a semiconductor device includes forming a laser marking buried within a semiconductor substrate and thinning the semiconductor substrate from a backside of the semiconductor substrate. For example, a semiconductor device includes a semiconductor substrate located in a semiconductor package. A laser marking is buried within the semiconductor substrate. For example, another semiconductor device includes a semiconductor substrate. A laser marking is located at a backside surface of the semiconductor substrate. Further, a portion of the backside surface located adjacent to the laser marking is free of recast material.

Abstract: Separation grooves are etched from a main surface into a semiconductor substrate. The separation grooves separate chip regions in horizontal directions parallel to the main surface. At least some of the separation grooves are spaced from a lateral outer surface of the semiconductor substrate by at most a first distance. An indentation is formed along a lateral surface. The indentation extends from the main surface into the semiconductor substrate. A minimum horizontal indentation width of the indentation is equal to or greater than the first distance. A with respect to the main surface vertical extension of the indentation is equal to or greater than a vertical extension of the separation grooves.

Abstract: A method of processing a semiconductor substrate is provided. The method may include forming a film over a first side of a semiconductor substrate, forming at least one separation region in the semiconductor substrate between a first region and a second region of the semiconductor substrate, arranging the semiconductor substrate on a breaking device, wherein the breaking device comprises a breaking edge, and wherein the semiconductor substrate is arranged with the film facing the breaking device and in at least one alignment position with the at least one separation region aligned with the breaking edge, and forcing the semiconductor substrate to bend the first region with respect to the second region over the breaking edge until the film separates between the breaking edge and the at least one separation region.

Abstract: A carrier tape comprises a flexible body portion having a top surface. The flexible body portion comprises a plurality of pockets. Each of the plurality of pockets comprises pocket side walls, a base bottom portion fully circulating a raised bottom portion of a pedestal. The pedestal is made up of the raised bottom portion and pedestal side walls. The pedestal sidewalls, the base bottom portion and a lower part of the pocket side walls constitute a trench fully circulating the pedestal.

Abstract: A process for the preparation of complexes containing 68Ga wherein a buffer formic acid/formate in the presence of compounds capable to sequester metal cations is used in the complexation reaction.