Abstract: A hybrid silicon-on-silicon substrate. A thin film (2101) of single-crystal silicon is bonded to a target wafer (46). A high-quality bond is formed between the thin film and the target wafer during a high-temperature annealing process. It is believed that the high-temperature annealing process forms covalent bonds between the layers at the interface (2305). The resulting hybrid wafer is suitable for use in integrated circuit manufacturing processes, similar to wafers with an epitaxial layer.

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract: A donor substrate (10) for forming multiple thin films of material (12). In one embodiment, a first thin film of material is separated or cleaved from a donor substrate by introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define donor substrate material (12) above the selected depth. Energy is provided to a selected region of the substrate to cleave a thin film of material from the donor substrate. Particles are introduced again into the donor substrate underneath a fresh, or cleaved, surface of the donor substrate. A second thin film of material is then cleaved from the donor substrate.

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract: A method and resulting system for directing generally collimated illumination from a source at an oblique angle to a surface under inspection (SUS) to produce scattered nonspecular energy substantially normal to the SUS and for observing the scattered nonspecular energy in one of a plurality of fractional windows of a viewed image of the SUS via a plurality of focussing elements. Such arrangement results in simultaneous and significant throughput and sensitivity enhancement over existing art. The method can be enhanced further wherein the observing step is performed through suitable relative motion of the scattering image over the imaging plane to permit over sampling. Furthermore, the DMT is significantly simplified because imaging is utilized to electronically scan the wafer instead of using opto-mechanical scanning means. Imaging sensors with an aggregate 2000.times.2000 pixel resolution could image a 200 mm wafer to 100 microns pitch.

Abstract: A method (500) for inspecting anomalies, which are likely defects of several types, namely, particles on the surface, scratches into surface, and defects in bulk material, is provided. This inspection method involves two types of illumination, which can be used separately or together. These two types highlight anomalies sufficiently differently to enable the defect monitoring tool to distinguish between defect type and defect location along an inspection axis. The illumination methods are direct internal side illumination (114) where the plate is used as light pipe, and external front-side illumination (117). In direct internal side illumination, a fiber optic feed (115) with flared end arranged as a line source is abutted to an edge (123) of the plate (102). In external side illumination, the source is light directed at an acute angle, preferably a grazing angle, to one of the surfaces (121).

Abstract: A method and resulting system for directing generally collimated illumination from a source at an oblique angle to a surface under inspection (SUS) to produce scattered nonspecular energy substantially normal to the SUS and for observing the scattered nonspecular energy in one of a plurality of fractional windows of a viewed image of the SUS via a plurality of focussing elements. Such arrangement results in simultaneous and significant throughput and sensitivity enhancement over existing art. The method can be enhanced further wherein the observing step is performed through suitable relative motion of the scattering image over the imaging plane to permit over sampling. Furthermore, the DMT is significantly simplified because imaging is utilized to electronically scan the wafer instead of using opto-mechanical scanning means. Imaging sensors with an aggregate 2000.times.2000 pixel resolution could image a 200 mm wafer to 100 microns pitch.

Abstract: The present invention provides an electro-optical element and its manufacturing method ideal for use in defect inspection devices for liquid crystal display substrates used in liquid crystal display panels. The electro-optical element of this invention possesses an electro-optical element, dielectric reflective film, transparent electrode, and transparent supporting substrate. These are united together by adhering the dielectric reflective film and transparent electrode edge to the electro-optical element. The electro-optical element is manufactured by consecutively affixing the transparent sheet with the transparent electrode, the electro-optical element, and transparent film with the dielectric reflective film to the transparent supporting substrate.

Abstract: An array of circuit elements which when excited produces voltages is analyzed by examining successive voltage images produced by the circuit elements. Specifically, the array of circuit elements is repeatedly excited at high speed while the voltage image produced by the array is electro-optically sampled at a succession of clock times using a relatively slow-speed electro-optic image sampling technique using a burst clock, thereby to capture a succession of voltage images. The successive voltage images can be viewed on a display device directly individually, or they can be processed by an image processor which compares the successive voltage images with stored representations of voltage images to yield information regarding the condition of the array. Maximum permissible device operating speed can also be determined without examination of individual cells.

Abstract: An elastic member is wrapped with wire or a wire mesh to provide uniform electrical contact with a substrate. The elastic member is compressible, allowing pressure to be applied, and a firmer contact established without damaging the contact points on the substrate.

Abstract: A method for testing liquid crystal display substrates with use of a testing apparatus which includes an electro-optical element. The test protocol includes applying a voltage between the circuitry on the liquid crystal display and the electro-optical element, irradiating the electro-optical element, evaluating performance under a variety of voltage conditions, and evaluating the corresponding response characteristics of the electro-optical element. The response characteristics are recorded by a plurality of CCD devices, each recording a different section of the panel. The changes in the magnitude of impressed voltage and polarity are synchronized with the recording timing. The recorded data is stored as frame memory which is subjected to frame by frame analysis to obtain quantitative information regarding the status of defective pixels.

Abstract: Construction defects in liquid crystal display base plates are detected by placing an electro-optical element, in which the optical properties change when an electric field is applied thereto, over and facing a liquid crystal display base plate, energizing the leads of said display base plate, irradiating the base plate with a light beam through the electro-optical element, and converting the optical changes detected for each pixel element electrode into a voltage distribution. The testing method in this invention is capable of identifying not only whether or not a pixel element electrode is functional, but also if a functional pixel element electrode is functioning as desired or not. Application of the testing method of this invention is able to test liquid crystal display base plates, including those which show ambiguous display irregularities. Electro-optical elements change their optical properties when an electrical field is applied thereto.

Abstract: The present invention provides an electro-optical element arranged to face a liquid crystal base plate, an electric source to impress an electric voltage between them, a source of light for irradiating light on the electro-optical element, a light detector to receive the reflected light from the electro-optical element, and a mounting device for fixing the liquid crystal base plate in a fixed position. The mounting device has a highly flat surface, groove thereon and vacuum attaches the liquid crystal base plate on the surface of the base platform. Light irradiates a reflective layer located on the lower surface of an electro-optical element which is in close proximity to the liquid crystal display base plate. A voltage is applied across the electro-optical element and the light reflected by the electro-optical element are measured. The optical characteristics of the electro-optical element is measured.

Abstract: LCD panels are inspected in-process to measure pixel decay, turn-on time and parasitic capacitance and/or identify pixel defects and line defects. Prior to final assembly, panels identified as having sufficiently few repairable defects are repaired. Line defects may be repaired. Further pixel defects may be repaired when redundant structures are included by splicing out the defective TFT or storage capacitor and splicing in a redundant, built-in TFT or storage capacitor. The inspection and repair systems are linked through a repair file. The inspection system identifies each defect by type and location and includes such information in the repair file. The repair system accesses such file and follows a prescribed repair method for a given type of defect at the location of such defect. The inspection system includes an automated non-contact voltage imaging system. The repair system includes lasers and means for repairing defects by adding metallization.

Abstract: A display panel testing apparatus, for observing large areas of a test panel, including an electro-optical element having optical properties that change to form images when an electric field is impressed thereon. The electro-optical element has a first surface facing a test panel that forms the electric field. The first surface and the test panel having a gap therebetween. The display panel testing apparatus also includes a light receptor for receiving the images from the electro-optical element and in particular a second surface of the electro-optical element. The display panel testing apparatus further includes a movable stage and movable mirrors coupled to the movable stage. The movable mirrors are adjustable to direct desired portions of the images onto the light receptor from desired positions of the electro-optical element. The movable stage also allows the movable mirrors to be positioned over the desired portions of the electro-optical element to receive the images portions therefrom.

Abstract: A testing method for active matrix liquid crystal display substrates having thin film transistors provided with a plurality of pixel electrodes, a plurality of source lines, and a plurality of gate lines formed on a substrate. A high resolution electro-optical element whose optical properties change when an electrical field is impressed on it is disposed above the active matrix liquid crystal display substrate and separated therefrom by an extremely small gap. Electric current is caused to flow between the pixel electrodes on the active matrix liquid crystal display substrate and the transparent thin film electrodes on the surface of the electro-optical element, creating an electrical field in the electro-optical element. By detecting local changes in the optical properties of the electro-optical element, defects in the pixels of the active matrix liquid crystal display substrate can be detected.

Abstract: An instrument for testing defects on active matrix liquid crystal display base plates used for liquid crystal display panels. The instrument includes a testing device having an electro-optical element and active matrix liquid crystal display base plate, a light source for emitting light to said base plate, a light guide for guiding light perpendicular to said electro-optical element, and a photo-receiver for receiving light reflected from the electro-optical element. The lighting device has a halogen light, a filter, and other elements, and the electro-optical element is equipped with an optically reflective part made of a dielectric multi-layer coating. The light guide has a translucent mirror incorporated inside a transparent vessel and is positioned at an angle with respect to the optical axis. The instrument can also detect various defects in active matrix liquid crystal display base plates with high accuracy.