Abstract: An Organic Light Emitting Diode (OLED) includes as active material a conjugated poly(N-alkyl-2,7-carbazole) derivative described by the formula: 1

Abstract: The invention relates to conjugated polycarbazole derivates comprising repeating or alternating units of the formula: 1

Abstract: A display screen having an optical mask and a process for producing the screen. The screen includes an optical mask formed of opaque conducting rows formed below addressing rows. Storage capacitors are formed overlapping the opaque conducting rows with an array of electrodes. The invention finds particular utility in the field of displays.

Abstract: A liquid crystal display screen including a substrate with conductive addressing columns and conductive blocks, each including a block lengthening piece, a layer of semiconductive material followed by a layer of nonconductive material formed on the addressing columns and conductive blocks, and conductive addressing lines formed on the nonconductive material and each overlapping a block lengthening piece. The block lengthening pieces, the conductive addressing columns, and the conductive addressing lines form addressing transistors. Also, capacitive lines are formed on the nonconductive material and overlap the conductive blocks such that the conductive blocks, the semiconductive material, the nonconductive material, and the capacitive lines form storage capacitors.

Abstract: The apparatus incorporates a h.f. source (2), a plasma enclosure ( 4 ) having gas supplies, a vacuum pump (50), elements for coupling the source to the plasma enclosure, which is of a non-radiating type and which is shaped like a rectangular parallelepiped with first and second dielectric material faces parallel to the direction of the magnetic field and a third face having a rectangular opening (14) parallel to said field for forming a ribbon-like plasma, a treatment enclosure containing a mobile sample holder (18) communicating via the opening with the plasma enclosure. The coupling means have two linear waveguides (30, 38 ) with a rectangular cross-section oriented in the wave propagation direction and located on either side of the plasma enclosure, a horn (36) for coupling one of the guides to the plasma enclosure, whose cross-section widens in the magnetic field direction, the other guide being provided with a short-circuit (46).

Abstract: This color display structure for color display purposes has a first and second spaced, transparent substrates, between which is interposed a liquid crystal film (6), the first substrate (2) essentially supporting color filters (124) resistant to high temperatures and separated by black matrixes (126), a first transparent, passivating layer (128) deposited on the entire surface occupied by the filters and the black matrixes, thin film transistors (8, 9), formed on the first passivating layer facing the black matrixes so as to be protected from the ambient light, first transparent capacitor plates (10) formed on the first passivating layer facing the color filters and connected to the transistors, electrode rows (14) and columns (12) for controlling these transistors and a second transparent passivating layer (20) covering the transistors, the first plates, the rows and the columns, the second substrate (4) essentially having the second transparent capacitor plate.

Abstract: The method includes only two masking levels. During the second masking, capacitative lines (LC) (dedicated or merged with the addressing lines) are defined which overlap the pixels so as to form the storage capacitors (Cs).Application for display on flat liquid crystal screens.

Abstract: A probe for use in non-destructive measuring of electrical resistance of a high current electrical connection between two high current electrical conductors, each of the conductors having a longitudinal exterior surface, the probe comprising: an articulated body being articulated about a longitudinal axis; a plurality of electrodes provided on an interior portion of the articulated body for engaging about the longitudinal exterior surface; connecting means for releaseably connecting the articulating body around the longitudinal exterior surface, the connecting means including resilient means cooperating with the plurality of electrodes for causing the electrodes to resiliently engage the surface, the electrodes being located on the probe body to be arranged substantially evenly around and on the longitudinal exterior surface of the corresponding conductor in a plane substantially perpendicular to a current flow in the conductor; and resistors connected in series with each electrode, each of the resistors havi

Abstract: Giant liquid crystal display means. The means comprises projection modules (MP) associated with mirrors (M1, M2) and a large screen (E). The screen carries colored filters (R, G, B) and the liquid crystal displays are monochromatic. Application to the projection of large television or pictures.

Abstract: The semiconductor making it possible to obtain thin film transistors is of hydrogenated amorphous silicon carbide. As this material is transparent, the stack constituted by the semiconductor and the insulant can be maintained over the entire wall, so that there is no need to expose the columns and blocks.Application to flat-faced screen displays.

Abstract: A process for the production of a diode array and liquid crystal display screen. Each display point of the array has a projection connected to an addressing column by a bridge with two diodes connected head to head. The process only involves two photogravure operations. In a second embodiment, a second bridge is connected to an adjacent column by way of the a second projection.

Abstract: An ohmmeter for measuring very low electric resistances, for example the very low resistance of a very high current electric joint, which ohmmeter comprises a source for establishing a measuring current through the joint to thereby create a voltage drop proportional to the magnitude of the measuring current and to the resistance to be measured. A first integrator integrates a signal respresentative of the magnitude of the measuring current in order to produce a first integration signal, while a second integrator integrates the voltage drop proportional to the measuring current and to the very low resistance in order to produce a second integration signal. The two integrators are simultaneously reset to zero so that they both start their respective integrations at a same instant. The first integration signal is compared to a reference signal through a comparator.

Abstract: Process of fabricating an active matrix display screen in which there are left after the second photo-etching segments (S) forming conductive bridges (120, 110, 112, 114) over breaks (103) in the conductive layer (102) forming the columns.

Abstract: Selective surfaces for photothermal solar collectors consisting of a nickel support, preferably commercial nickel of 99.5% purity, a layer of a porous nickel oxide of about 0.2 .mu.m covering the metallic support, the layer of porous nickel oxide being covered with asperities in the form of a network of nickel oxide discs in which the major portions are oriented at an angle with respect to the vertical. The network of discs has a thickness of about 2 .mu.m. The preparation of these selective surfaces is carried out in the following manner. Thin nickel plates are subjected to a heat treatment by heating and oxidizing in an oxidant gas during a short period of time at a temperature varying between about 1000.degree. C. and 1100.degree. C. The oxidized nickel plates are reduced at a temperature of about 1100.degree. C. in the presence of a reducing gas until the metallic state is obtained. The surrounding temperature is thereafter lowered between 810.degree. and 830.degree. C.

Abstract: Method for the manufacture of electronic circuits based on thin-film transistors and capacitors.According to the invention this method comprises the following operations: deposition of a layer (102) of a first transparent, conductive material on an insulating substrate (100), first photogravure applied to the first layer to constitute blocks (106) forming one of the plates of the future capacitors, as well as the sources and drains for the future transistors, deposition of a hydrogenated, amorphous silicon layer (110), deposition of an insulating layer (112), deposition of a layer (114) of a second conductive material and second photogravure applied to the silicon layer-insulating layer-conductive layer assembly in order to define the control grids of the transistors.Application to the construction of display screen control circuits or BBD registers.

Abstract: Process for the production of thin-film transistors on an insulating substrate, wherein it comprises the following stages:1. deposition on an insulating substrate of a coating of a metal able to form a silicide in contact with a silicon,2. photoengraving of the first metal coating to define the sources, drains and channels for the future transistors and various connections between the transistors,3. deposition of a silicon coating by reactive gaseous phase plasma, which leads to the appearance of a silicide coating in contact with the metal of the photoengraved coating,4. deposition of a silica coating by reactive gaseous phase plasma,5. deposition of a conductive coating by reactive gaseous phase plasma,6. photoengraving of the conductive coating-silica coating-silicon coating system, without etching the silicide covering the photoengraved metal coating.Application to the production of large-area electronic components used e.g. in the production of flat display screens and the like.

Abstract: The present invention relates to a process for making semi-conductor components on an amorphous substrate, comprising two phases, wherein, in a first phase, the substrate is introduced into a deposition chamber and a uniform deposit is made of four successive primary layers on all this substrate, without contact with the outside atmosphere: a first layer of protective insulating material, a second layer of semiconductor material, a third layer of insulating material, of smaller thickness than the first layer, and finally a fourth layer of a metal; and, in a second phase, the substrate coated with these four layers is withdrawn from the deposition chamber and the last three layers are subjected to photoetching and ancillary deposition operations, which are appropriate for the structure of the component to be obtained.