Abstract: An optoelectronic device manufacturing method, including the following successive steps: transferring an active inorganic photosensitive diode stack on an integrated control circuit previously formed inside and on top of a semiconductor substrate; and forming a plurality of organic light-emitting diodes on the active photosensitive diode stack.

Abstract: A method of manufacturing an optoelectronic device, including the steps of: a) arranging an active photosensitive diode stack on a first substrate; b) transferring the active photosensitive diode stack onto an integrated control circuit previously formed inside and on top of a second semiconductor substrate, and then removing the first substrate; c) arranging an active light-emitting diode stack on a third substrate; and d) after steps b) and c), transferring the active light-emitting diode stack onto the active photosensitive diode stack, and then removing the third substrate.

Abstract: A method of manufacturing an optoelectronic device, including the steps of: a) arranging an active photosensitive diode stack on a first substrate; b) arranging an active light-emitting diode stack on a second substrate; c) after steps a) and b), transferring the active photosensitive diode stack onto the active light-emitting diode stack, and then removing the first substrate; and d) after step c), transferring the assembly comprising the active photosensitive diode stack and the active light-emitting diode stack onto an integrated control circuit previously formed inside and on top of a third substrate, and then removing the second substrate.

Abstract: The invention relates to a method for manufacturing an optoelectronic device (1) including an array of diodes (D1, D2, D3) and an array of colour conversion portions (P1, P2), including the following steps: providing the array of diodes (D1, D2, D3), and the upper electrode layers (E1, E2, E3); depositing a dielectric layer (26) having a substantially zero surface potential; applying a potential difference between an electrode (2) and the first upper electrode layers (E1), resulting in the formation of first patterns (M1) with non-zero surface potential in the dielectric layer (26); producing the first colour conversion portions (P1), by contacting the dielectric layer (26) with a colloidal solution (S1) containing first photoluminescent particles (p1).

Abstract: A device including a transfer substrate including electric connection elements; and a plurality of elementary chips bonded and electrically connected to the transfer substrate, each elementary chip including at least one LED and an electronic circuit for controlling said at least one LED, the device further including comprising, associated with at least one elementary chip, a capture or actuation element external to the elementary chip, bonded and electrically connected to the transfer substrate, each elementary chip including an electronic circuit for reading from or controlling the capture or actuation element associated with the chip.

Abstract: A method for producing an optoelectronic device having nitride-based microLEDs includes providing an assembly having at least one growth substrate and a nitride structure, where the nitride structure has a semipolar nitride layer that includes an active stack and crystallites extending from facets of the growth substrate with a crystalline orientation {111} to the first face of the semipolar nitride layer and providing an integrated control circuit featuring electric connection pads. The assembly is placed on the integrated control circuit, the growth substrate and the crystallites are removed, and trenches are formed in the stack so as to delimit a plurality of islets, each islet being configured to form a microLED.

Abstract: A device including: a transfer substrate including electric connection elements; a plurality of first monolithic elementary chips bonded and electrically connected to the transfer substrate, each first elementary chip including at least one LED and one integrated electronic circuit for controlling said at least one LED, the device further including, associated with at least one of the first elementary chips, a second elementary chip including a vertical cavity surface-emitting laser diode, bonded and electrically connected to the transfer substrate, the first elementary chip including an integrated electronic circuit for controlling said laser diode.

Abstract: An optoelectronic device including a light-emitting diode covered with a photoluminescent conversion layer based on a perovskite material.

Abstract: The invention relates to a videoconferencing system 1, comprising: a display screen 10, for displaying an image Ie(ti) containing N images Iint(k)(ti); a camera 20, for acquiring an image Ic(tj); a single-pixel-imager-employing optical device suitable for determining N images Ico(k)(tj) on the basis of sub-matrices SMimp(k)(tj) comprising: an optical source 31, suitable for irradiating an ocular portion Po(tj) of the face of the user; a matrix of single-pixel imagers that are suitable for reconstructing a correction image Ico(k)(tj) on the basis of the light beam reflected by the ocular portion Po(tj); a processing unit 40, suitable for: determining, in each image Iint(k)(ti) of the image Ie(ti), a target point Pc(k)(tj), then selecting N sub-matrices SMimp(k)(tj) each centred on a target point Pc(k)(tj); correcting the image Ic(tj), by replacing a region of the image Pc(tj) representing the ocular portion Po(tj) with the N images Ico(k)(tj).

Abstract: An X-ray imaging device, including: a transfer substrate including electric connection elements; an array of pixels, each including a monolithic elementary chip bonded and electrically connected to elements of electric connection of the transfer substrate, and a photodiode formed on the transfer substrate and electrically connected to the elementary chip; and a scintillator coating the pixel array, wherein, in each pixel, the elementary chip includes an integrated circuit for reading from the pixel photodiode.

Abstract: An X-ray imaging device, including: a transfer substrate including electric connection elements; an array of pixels, each including a monolithic elementary chip bonded and electrically connected to elements of electric connection of the transfer substrate, and a direct conversion X photon detector electrically connected to the elementary chip, wherein, in each pixel, the elementary chip includes an integrated circuit for reading from the detector of the pixel.

Abstract: An optoelectronic device including at least one electromechanical transducer located vertically in line with at least one light-emitting diode, said at least one electromechanical transducer and said at least one light-emitting diode being connected to conductive tracks of a same transfer substrate.

Abstract: A method of manufacturing an optoelectronic device comprising the successive steps of: a) forming, on an integrated control circuit previously formed inside and on top of a semiconductor substrate, a plurality of inorganic light-emitting diodes including three-dimensional semiconductor elements; and b) depositing an active photosensitive semiconductor layer to fill free spaces laterally extending between the inorganic light-emitting diodes.

Abstract: An optoelectronic device including at least an emissive component including at least a first electrode, a second electrode, and an emissive element disposed between an emissive face of the optoelectronic device and the second electrode, a photodetector component such that the second electrode of the emissive component is disposed between the photodetector component and the emissive element. The emissive component and the photodetector component are superimposed one above the other, and the second electrode has at least one hole passing through it, disposed vertically in line with at least a part of a detection surface of the photodetector component and/or a part of the detection surface of the photodetector component is not disposed vertically in line with the second electrode and form a ring located at the external edges of the detection surface of the photodetector component.

Abstract: A method of manufacturing an optoelectronic device including the following successive steps: a) forming, on an integrated control circuit previously formed inside and on top of a semiconductor substrate, a plurality of inorganic light-emitting diodes; and b) depositing an active photosensitive semiconductor layer to fill free spaces laterally extending between the inorganic light-emitting diodes.

Abstract: A device including: a transfer substrate including electric connection elements; and a plurality of elementary chips bonded and electrically connected to the transfer substrate, each elementary chip including at least one photodetector and an electronic circuit for reading from the at least one photodetector, the device further including, associated with at least one elementary chip, an emission, capture, or actuation element external to the elementary chip, bonded and electrically connected to the transfer substrate, each elementary chip including an electronic circuit for controlling the emission, capture, or actuation element associated with the chip.

Abstract: An optoelectronic device manufacturing method, including the following successive steps: transferring an active inorganic photosensitive diode stack on an integrated control circuit previously formed inside and on top of a semiconductor substrate; and forming a plurality of organic light-emitting diodes on the active photosensitive diode stack.

Abstract: A method of manufacturing an optoelectronic device, including the steps of: a) arranging an active photosensitive diode stack on a first substrate; b) transferring the active photosensitive diode stack onto an integrated control circuit previously formed inside and on top of a second semiconductor substrate, and then removing the first substrate; c) arranging an active light-emitting diode stack on a third substrate; and d) after steps b) and c), transferring the active light-emitting diode stack onto the active photosensitive diode stack, and then removing the third substrate.

Abstract: A method of manufacturing an optoelectronic device, including the steps of: a) arranging an active photosensitive diode stack on a first substrate; b) arranging an active light-emitting diode stack on a second substrate; c) after steps a) and b), transferring the active photosensitive diode stack onto the active light-emitting diode stack, and then removing the first substrate; and d) after step c), transferring the assembly comprising the active photosensitive diode stack and the active light-emitting diode stack onto an integrated control circuit previously formed inside and on top of a third substrate, and then removing the second substrate.

Abstract: The invention relates to a videoconferencing system 1, comprising: a display screen 10, for displaying an image Ie(ti) containing N images Iint(k)(ti); a camera 20, for acquiring an image Ic(tj); a single-pixel-imager-employing optical device suitable for determining N images Ico(k)(tj) on the basis of sub-matrices SMimp(k)(tj) comprising: an optical source 31, suitable for irradiating an ocular portion Po(tj) of the face of the user; a matrix of single-pixel imagers that are suitable for reconstructing a correction image Ico(k)(tj) on the basis of the light beam reflected by the ocular portion Po(tj); a processing unit 40, suitable for: determining, in each image Iint(k)(ti) of the image Ie(ti), a target point Pc(k)(tj), then selecting N sub-matrices SMimp(k)(tj) each centred on a target point Pc(k)(tj); correcting the image Ic(tj), by replacing a region of the image Pc(tj) representing the ocular portion Po(tj) with the N images Ico(k)(tj).