Abstract: This overhead projector comprises: a screen (4) equipped with a frame and a translucent panel tautened on this frame, the translucent panel having a front face (20) on which the images are displayed and a rear face (8) on which the images are projected, the screen (4) being capable of being shifted between a retracted position and a stretched position in which the surface area of the panel is increased by at least 10% relatively to the surface area of the panel in its retracted position an apparatus (5) for projecting images on the rear face of the translucent panel this apparatus (5) being capable of adapting the size of the projected images to the retracted position as well as to the stretched position of the screen.

Abstract: A method for producing an emissive pixel screen includes forming an active pixel matrix along which an electrode forming layer runs and having pixels arranged according to a distribution, forming an anisotropic substrate that includes a set of light emitting diodes constituted by parallel nanowires and arranged in an insulating matrix transversely with respect to a substrate thickness and having a density higher than a density of the pixels irrespective of the pixel distribution, connecting the substrate to the active pixel matrix by connecting only sub-groups of the parallel nanowires by a first end to separate pixel electrodes defined in the electrode forming layer according to the distribution of the pixels in the matrix, and connecting the sub-groups, by another end, to a common electrode, and delimiting the sub-groups by rendering the nanowires of the substrate that are arranged between the sub-groups emissively inactive.

Abstract: This display unit comprises screens (4, 6, 8, 10) positioned in parallel to a plane of display between a retracted position in which at least two screens overlap to reduce a cumulated display surface and a fully deployed position in which the overlapping of the screens is reduced or eliminated to increase the cumulated display surface, and a computer (12) capable of commanding the display of a complete image on the totality of the cumulated display surface both in the retracted position and in the fully deployed position.

Abstract: A method for producing an emissive pixel screen includes forming an active pixel matrix along which an electrode forming layer runs and having pixels arranged according to a distribution, forming an anisotropic substrate that includes a set of light emitting diodes constituted by parallel nanowires and arranged in an insulating matrix transversely with respect to a substrate thickness and having a density higher than a density of the pixels irrespective of the pixel distribution, connecting the substrate to the active pixel matrix by connecting only sub-groups of the parallel nanowires by a first end to separate pixel electrodes defined in the electrode forming layer according to the distribution of the pixels in the matrix, and connecting the sub-groups, by another end, to a common electrode, and delimiting the sub-groups by rendering the nanowires of the substrate that are arranged between the sub-groups emissively inactive.

Abstract: This display unit comprises screens (4, 6, 8, 10) positioned in parallel to a plane of display between a retracted position in which at least two screens overlap to reduce a cumulated display surface and a fully deployed position in which the overlapping of the screens is reduced or eliminated to increase the cumulated display surface, and a computer (12) capable of commanding the display of a complete image on the totality of the cumulated display surface both in the retracted position and in the fully deployed position.

Abstract: This overhead projector comprises: a screen (4) equipped with a frame and a translucent panel tautened on this frame, the translucent panel having a front face (20) on which the images are displayed and a rear face (8) on which the images are projected, the screen (4) being capable of being shifted between a retracted position and a stretched position in which the surface area of the panel is increased by at least 10% relatively to the surface area of the panel in its retracted position an apparatus (5) for projecting images on the rear face of the translucent panel this apparatus (5) being capable of adapting the size of the projected images to the retracted position as well as to the stretched position of the screen.

Abstract: In the fabrication of a thin-film flexible electronic device of the screen type that includes a plurality of thin-film components on a glass support a starting support is prepared, including a rigid bulk substrate and a glass sheet fastened to the rigid bulk substrate by reversible direct bonding so as to obtain a removable interface. The plurality of thin-film components are fabricated on the glass sheet. The glass sheet is separated from the rigid bulk substrate by disassembling the interface and, the glass sheet and the plurality of thin-film components are transferred to a final support.

Abstract: The present invention relates to a power junction device including a substrate of the SiCOI type with a layer of silicon carbide (16) insulated from a solid carrier (12) by a buried layer of insulant (14), and including at least one Schottky contact between a first metal layer (40) and the surface layer of silicon carbide (16), the first metal layer (30) constituting an anode.

Abstract: The invention relates to an SiCOI type composite substrate manufacturing method comprising the following steps: supply of an initial substrate comprising an Si or SiC support (1) bearing a layer (2) of SiO2 whereon a thin layer (3) of SiC is transferred, epitaxy of SiC (4) on the thin layer (3) of SiC. The epitaxy is conducted at the following temperatures from 1450° C. to obtain 6H or 4H polytype epitaxy (4) on a transferred thin 6H or 4H polytype layer (3) respectively, if the support (1) consists of SiC, from 1350° C. to obtain 3C polytype epitaxy (4) on a transferred thin 3C polytype layer (3), if the support (1) consists of Si or SiC, from 1350° C. to obtain 6H or 4H polytype epitaxy (4) on a transferred thin 6H or 4H polytype layer (3) respectively, if the support (1) consists of Si.

Abstract: The invention relates to a power semiconducting device made from a semiconducting material epitaxied on a stacked structure (10) comprising a layer of semiconducting material (13) transferred onto a first face of a support substrate (11) and fixed to the support substrate by an electrically insulating layer (12), the support substrate comprising electrically conducting means between said first face and a second face, the transferred layer of semiconducting material (13) acting as an epitaxy support for the epitaxied semiconducting material (14, 15).

Abstract: The present invention relates to a power junction device including a substrate of the SiCOI type with a layer of silicon carbide (16) insulated from a solid carrier (12) by a buried layer of insulant (14), and including at least one Schottky contact between a first metal layer (40) and the surface layer of silicon carbide (16), the first metal layer (30) constituting an anode.

Abstract: A method is provided for manufacturing, in four masking steps, an active matrix for a liquid crystal display screen whose control transistors are of the top-gate type. The liquid crystal display screen obtained by means of this method is particularly suitable for use in image projection systems. The method comprises the steps of: depositing and etching a first opaque layer on a transparent insulating plate; depositing an insulating transparent layer; depositing and etching a transparent conductor; selectively depositing an ohmic contact and subsequently depositing an intrinsic semiconductor material and a gate insulating material, and first etching of the assembly, depositing and etching an opaque conducting layer, and etching of the semiconductor layer and gate insulating layer by using as a mask the etched opaque conducting layer.