Abstract: By forming metallization structures on the basis of an imprint technique, in which via openings and trenches may be commonly formed, a significant reduction of process complexity may be achieved due to the omission of at least one further alignment process as required in conventional process techniques. Furthermore, the flexibility and efficiency of imprint lithography may be increased by providing appropriately designed imprint molds in order to provide via openings and trenches exhibiting an increased fill capability, thereby also improving the performance of the finally obtained metallization structures with respect to reliability, resistance against electromigration and the like.

Abstract: When forming a complex metallization system in which vias of different lateral size have to be provided, a split patterning sequence may be applied. For this purpose, a lithography process may be specifically designed for the critical via openings and a subsequent second patterning process may be applied for forming the vias of increased lateral dimensions, while the critical vias are masked. In this manner, superior process conditions may be established for each of the patterning sequences.

Abstract: By forming a highly non-conformal stressed overlayer, such as a contact etch stop layer, the efficiency of the stress transfer into the respective channel region of a field effect transistor may be significantly increased. For instance, non-conformal PECVD techniques may be used for forming highly stressed silicon nitride in a non-conformal manner, thereby achieving higher transistor performance for otherwise identical stress conditions.

Abstract: By forming metallization structures on the basis of an imprint technique, in which via openings and trenches may be commonly formed, a significant reduction of process complexity may be achieved due to the omission of at least one further alignment process as required in conventional process techniques. Furthermore, the flexibility and efficiency of imprint lithography may be increased by providing appropriately designed imprint molds in order to provide via openings and trenches exhibiting an increased fill capability, thereby also improving the performance of the finally obtained metallization structures with respect to reliability, resistance against electromigration and the like.

Abstract: By providing a protection layer at the bevel region, the deposition of polymer materials during the patterning process of complex metallization structures may be reduced. Additionally or alternatively, a surface topography may be provided, for instance in the form of respective recesses, in order to enhance the degree of adhesion of any materials deposited in the bevel region during the manufacturing of complex metallization structures. Advantageously, the provision of the protection layer providing the reduced polymer deposition may be combined with the modified surface topography.

Abstract: By removing excess material of an interlayer dielectric material deposited by SACVD, the gap filling capabilities of this deposition technique may be exploited, while, on the other hand, negative effects of this material may be reduced. In other aspects, a buffer material, such as silicon dioxide, may be formed prior to depositing the interlayer dielectric material on the basis of SACVD, thereby creating enhanced uniformity during the deposition process when depositing the interlayer dielectric material on dielectric layers having different high intrinsic stress levels. Consequently, the reliability of the interlayer dielectric material may be enhanced while nevertheless maintaining the advantages provided by an SACVD deposition.

Abstract: In a complex metallization system, the probability of dielectric breakdown may be reduced by vertically separating a critical area of high electric field strength and an area of reduced dielectric strength of the interlayer dielectric material. For this purpose, the interlayer dielectric material may be recessed after forming the metal regions and/or the metal regions may be increased in height and the corresponding recess may be refilled with an appropriate dielectric material.

Abstract: In a replacement gate approach for forming high-k metal gate electrodes in semiconductor devices, a tapered configuration of the gate openings may be accomplished by using a tensile stressed dielectric material provided laterally adjacent to the gate electrode structure. Consequently, superior deposition conditions may be achieved while the tensile stress component may be efficiently used for the strain engineering in one type of transistor. Furthermore, an additional compressively stressed dielectric material may be applied after providing the replacement gate electrode structures.

Abstract: A semiconductor structure comprises a semiconductor substrate. A layer of an electrically insulating material is formed over the semiconductor substrate. An electrically conductive feature is formed in the layer of electrically insulating material. A first layer of a semiconductor material is formed between the electrically conductive feature and the layer of electrically insulating material.

Abstract: Contact elements of sophisticated semiconductor devices may be formed by lithographical patterning, providing a spacer element for defining the final critical width in combination with increasing a width of the contact opening prior to depositing the spacer material. The width may be increased, for instance by ion sputtering, thereby resulting in superior process conditions during the deposition of a contact metal. As a result, the probability of generating contact failures for contact elements having critical dimensions of approximately 50 nm and less may be significantly reduced.

Abstract: In sophisticated semiconductor devices, the electromigration performance of copper metal lines at the top interface thereof may be enhanced by forming a copper alloy that is locally restricted to the interface. To this end, an appropriate alloy-forming species, such as aluminum, may be provided on the basis of a non-masked deposition process and may be subsequently removed by a non-masked etch process, wherein the characteristic of the resulting alloy may be adjusted during an intermediate heat treatment.

Abstract: Adhesion of dielectric layer stacks to be formed after completing the basic configuration of transistor elements may be increased by avoiding the formation of a metal silicide in the edge region of the substrate. For this purpose, a dielectric protection layer may be selectively formed in the edge region prior to a corresponding pre-clean process or immediately prior to deposition of the refractory metal. Hence, non-reacted metal may be efficiently removed from the edge region without creating a non-desired metal silicide. Hence, the further processing may be continued on the basis of enhanced process conditions for forming interlayer dielectric materials.

Abstract: During the formation of a complex metallization system, the influence of a manufacturing environment on sensitive barrier/seed material systems may be monitored or controlled by using an appropriate test pattern and applying an appropriate test strategy. For example, actual probe and reference substrates may be prepared and may be processed with and without exposure to the manufacturing environment of interest, thereby enabling an efficient evaluation of one or more parameters of the environment. Furthermore, an “optimized” manufacturing environment may be obtained on the basis of the test strategy disclosed herein.

Abstract: OPC results may be efficiently evaluated on the basis of a test structure containing a plurality of line features with opposing end portions. Thus, for different line parameters, the effect of OPC may be determined for a given critical tip-to-tip distance by determining the leakage behavior of the test assemblies, each having different design parameter values for line width and lateral distance between adjacent lines.

Abstract: In a metallization system of a complex semiconductor device, metal pillars, such as copper pillars, may be formed in a nail-like configuration in order to reduce the maximum mechanical stress acting on the metallization system while providing a required contact surface for connecting to the package substrate. The nail-like configuration may be obtained on the basis of appropriately configured resist masks.

Abstract: During the formation of complex metallization systems, a conductive cap layer may be formed on a copper-containing metal region in order to enhance the electromigration behavior without negatively affecting the overall conductivity. At the same time, a thermo chemical treatment may be performed to provide superior surface conditions of the sensitive dielectric material and also to suppress carbon depletion, which may conventionally result in a significant variability of material characteristics of sensitive ULK materials.

Abstract: In a “via first/trench last” approach for forming metal lines and vias in a metallization system of a semiconductor device, a combination of two hard masks may be used, wherein the desired lateral size of the via openings may be defined on the basis of spacer elements, thereby resulting in significantly less demanding lithography conditions compared to conventional approaches.

Abstract: By providing a plurality of resistors and a plurality of test patterns within a leakage current test structure, the number of probe pads required for estimating the plurality of test patterns may be significantly reduced, wherein, in some illustrative embodiments, several test patterns may be simultaneously assessed on the basis of two probe pads. Consequently, process parameters and/or design parameters for manufacturing metallization structures of semiconductor devices may be efficiently monitored and controlled.

Abstract: Electromigration behavior in complex metallization systems of semiconductor devices may be enhanced at critical areas between a metal line and a via by locally forming a copper/silicon compound. In some illustrative embodiments, the formation of the copper/silicon compound may be combined with other treatments for cleaning the exposed surface areas and/or modifying the molecular structure thereof.

Abstract: In a metallization system of a semiconductor device, a transition via may be provided with an increased degree of tapering by modifying a corresponding etch sequence. For example, the resist mask for forming the via opening may be eroded once or several times in order to increase the lateral size of the corresponding mask opening. Due to the pronounced degree of tapering, enhanced deposition conditions may be accomplished during the subsequent electrochemical deposition process for commonly filling the via opening and a wide trench connected thereto.