Abstract: By forming a highly non-conformal stressed overlayer, such as a contact etch stop layer, the efficiency of the stress transfer into the respective channel region of a field effect transistor may be significantly increased. For instance, non-conformal PECVD techniques may be used for forming highly stressed silicon nitride in a non-conformal manner, thereby achieving higher transistor performance for otherwise identical stress conditions.

Abstract: By forming a conductive material within an etch mask for an anisotropic etch process for patterning openings, such as vias, in a dielectric layer of a metallization structure, the probability for arcing events may be reduced, since excess charge may be laterally distributed. For example, an additional sacrificial conductive layer may be formed or an anti-reflecting coating (ARC) may be provided in the form of a conductive material in order to obtain the lateral charge distribution.

Abstract: By providing a protective layer in an intermediate manufacturing stage, an increased surface protection with respect to particle contamination and surface corrosion may be achieved. In some illustrative embodiments, the protective layer may be used during an electrical test procedure, in which respective contact portions are contacted through the protective layer, thereby significantly reducing particle contamination during a respective measurement process.

Abstract: By incorporating an etch control material after the formation of a material layer to be patterned, an appropriate material having a highly distinctive radiation wavelength may be used for generating a distinctive endpoint detection signal during an etch process. Advantageously, the material may be incorporated by ion implantation which provides reduced non-uniformity compared to etch non-uniformities, while the implantation process provides the potential for introducing even very “exotic” implantation species. In some embodiments, the substrate-to-substrate uniformity of the patterning of dual damascene structures may be increased.

Abstract: By providing a protection layer at the bevel region, the deposition of polymer materials during the patterning process of complex metallization structures may be reduced. Additionally or alternatively, a surface topography may be provided, for instance in the form of respective recesses, in order to enhance the degree of adhesion of any materials deposited in the bevel region during the manufacturing of complex metallization structures. Advantageously, the provision of the protection layer providing the reduced polymer deposition may be combined with the modified surface topography.

Abstract: By additionally planarizing the surface topography of a planarization layer, which may be accomplished on the basis of mechanical contact, a uniform force, a polishing process and the like, an enhanced surface topography may be provided which may be advantageously used in subsequent patterning processes, such as photolithography, imprint techniques and the like.

Abstract: By forming metallization structures on the basis of an imprint technique, in which via openings and trenches may be commonly formed, a significant reduction of process complexity may be achieved due to the omission of at least one further alignment process as required in conventional process techniques. Furthermore, the flexibility and efficiency of imprint lithography may be increased by providing appropriately designed imprint molds in order to provide via openings and trenches exhibiting an increased fill capability, thereby also improving the performance of the finally obtained metallization structures with respect to reliability, resistance against electromigration and the like.

Abstract: By providing a plurality of resistors and a plurality of test patterns within a leakage current test structure, the number of probe pads required for estimating the plurality of test patterns may be significantly reduced, wherein, in some illustrative embodiments, several test patterns may be simultaneously assessed on the basis of two probe pads. Consequently, process parameters and/or design parameters for manufacturing metallization structures of semiconductor devices may be efficiently monitored and controlled.

Abstract: During the formation of an underfill material provided between a carrier substrate and a semiconductor chip, a common motion of particles contained in the underfill material is initiated towards the semiconductor chip, thereby adjusting the thermal and mechanical behavior of the underfill material. For instance, by applying an external force, such as gravity, a depletion zone with respect to the filler particles may be created in the vicinity of the carrier substrate, while a high particle concentration may be obtained in the vicinity of the semiconductor chip. Hence, thermal and mechanical stress redistribution by means of the underfill material may be enhanced.

Abstract: By providing a test structure for electromigration tests in semiconductor devices, which may indicate the status of a barrier layer at the bottom of a test via in the structure, a significantly increased reliability of respective electromigration tests may be obtained. Furthermore, the degree of porosity of the barrier layer may be estimated on the basis of the resulting test structure, which comprises a feed line having an increased probability for void formation compared to the test via, when a specific degree of porosity is created in the test via.

Abstract: In a method of forming a semiconductor structure, an opening is formed in a layer of a dielectric material provided over an electrically conductive feature. An etching process is performed in order to form a recess in the electrically conductive feature. The bottom of the recess may have a rounded shape. The recess and the opening are filled with an electrically conductive material. Due to the provision of the recess, electromigration, stress migration and a local heating of the semiconductor structure, which may adversely affect the functionality of the semiconductor structure, can be reduced.

Abstract: By providing a stiffening layer at three sidewalls of a trench to be filled with a copper-containing metal, the reduced thermomechanical confinement of a low-k material may be compensated for, at least to a certain degree, thereby reducing electromigration effects and hence increasing lifetime of sophisticated semiconductor devices having metallization layers including low-k dielectric materials in combination with copper-based metal lines.

Abstract: During the formation of an underfill material provided between a carrier substrate and a semiconductor chip, a common motion of particles contained in the underfill material is initiated towards the semiconductor chip, thereby adjusting the thermal and mechanical behavior of the underfill material. For instance, by applying an external force, such as gravity, a depletion zone with respect to the filler particles may be created in the vicinity of the carrier substrate, while a high particle concentration may be obtained in the vicinity of the semiconductor chip. Hence, thermal and mechanical stress redistribution by means of the underfill material may be enhanced.

Abstract: The introduction of dielectric material of enhanced mechanical stability, such as silicon dioxide or fluorine-doped silicon dioxide, into the via level of a low-k interconnect structure provides an increased overall mechanical stability, especially during the packaging of the device. Consequently, cracking and delamination, as frequently observed in high end low-k interconnect structures, may significantly be reduced, even if organic package substrates are used.