Abstract: This document describes a system and method for selectively switching the fast-wet-etching direction of crystalline silicon, c-Si, nanostructures between the (100) and the (110) crystallographic planes of c-Si by a simple method of sample agitation. This method effectively allows the invention to achieve anisotropic and isotropic wet-etching of c-Si.

Abstract: A method is provided for dicing a semiconductor substrate into a plurality of dies, the semiconductor substrate having a front side including a plurality of device areas, a back side, and a plurality of through substrate vias. The method includes defining, from the front side, at least one trench to be formed between adjacent device areas, forming the at least one trench, from the front side of the semiconductor substrate, arranging a protective layer on the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side to reduce the thickness of the semiconductor substrate, processing the back side of the semiconductor substrate to form at least one contact, the contact contacting at least one through substrate via, etching through the minor portion of the thickness of the semiconductor substrate underneath the at least one trench, and dicing the semiconductor substrate into the plurality of dies.

Abstract: This document describes a system and method for selectively switching the fast-wet-etching direction of crystalline silicon, c-Si, nanostructures between the (100) and the (110) crystallographic planes of c-Si by a simple method of sample agitation. This method effectively allows the invention to achieve anisotropic and isotropic wet-etching of c-Si.

Abstract: A method for etching one or more entities on a semiconductor structure, each entity being made of a material selected from metals and metal nitrides is provided. The method includes the steps of: (a) oxidizing by electrolysis, at a current of at least 0.1 A, a precursor solution comprising chloride anions at a concentration ranging from 0.01 mol/l to 1.0 mol/l, thereby forming an etching solution; (b) providing a semiconductor structure having the one or more entities thereon; and (c) etching at least partially the one or more entities by contacting them with the etching solution.

Abstract: A method is provided for dicing a semiconductor substrate into a plurality of dies, the semiconductor substrate having a front side including a plurality of device areas, a back side, and a plurality of through substrate vias. The method includes defining, from the front side, at least one trench to be formed between adjacent device areas, forming the at least one trench, from the front side of the semiconductor substrate, arranging a protective layer on the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side to reduce the thickness of the semiconductor substrate, processing the back side of the semiconductor substrate to form at least one contact, the contact contacting at least one through substrate via, etching through the minor portion of the thickness of the semiconductor substrate underneath the at least one trench, and dicing the semiconductor substrate into the plurality of dies.

Abstract: A method for etching one or more entities on a semiconductor structure, each entity being made of a material selected from metals and metal nitrides is provided. The method includes the steps of: (a) oxidizing by electrolysis, at a current of at least 0.1 A, a precursor solution comprising chloride anions at a concentration ranging from 0.01 mol/l to 1.0 mol/l, thereby forming an etching solution; (b) providing a semiconductor structure having the one or more entities thereon; and (c) etching at least partially the one or more entities by contacting them with the etching solution.

Abstract: The disclosed technology generally relates to storing data, and more particularly relates to a method of storing data in a polymer, where the data comprises a sequence of bits. In one aspect, the method comprises receiving a sequence of bits to be stored and providing a group of different homo-bifunctional monomers. Each homo-bifunctional monomer comprises a core structure having identical functional groups attached at two different positions of the core structure. The group of different homo-bifunctional monomers comprises homo-bifunctional monomers having at least two different core structures. The method further comprises linking the different homo-bifunctional monomers together to form the polymer having a sequence of monomer core structures representing the sequence of bits to be stored. The different homo-bifunctional monomers are linked together using a click chemistry reaction between the functional groups of the different homo-bifunctional monomers.

Abstract: The wet treatment of wafer-shaped articles is improved by utilizing a droplet generator designed to produce a spray of monodisperse droplets. The droplet generator is mounted above a spin chuck, and is moved across a major surface of the wafer-shaped article in a linear or arcuate path. The droplet generator includes a transducer acoustically coupled to its body such that sonic energy reaches a region of the body surrounding the discharge orifices. Each orifice has a width w of at least 1 ?m and at most 200 ?m and a height h such that a ratio of h to w is not greater than 1.

Abstract: The wet treatment of wafer-shaped articles is improved by utilizing a droplet generator designed to produce a spray of monodisperse droplets. The droplet generator is mounted above a spin chuck, and is moved across a major surface of the wafer-shaped article in a linear or arcuate path. The droplet generator includes a transducer acoustically coupled to its body such that sonic energy reaches a region of the body surrounding the discharge orifices. Each orifice has a width w of at least 1 ?m and at most 200 ?m and a height h such that a ratio of h to w is not greater than 1.

Abstract: The wet treatment of wafer-shaped articles is improved by utilizing a droplet generator designed to produce a spray of monodisperse droplets. The droplet generator is mounted above a spin chuck, and is moved across a major surface of the wafer-shaped article in a linear or arcuate path. The droplet generator includes a transducer acoustically coupled to its body such that sonic energy reaches a region of the body surrounding the discharge orifices. Each orifice has a width w of at least 1 ?m and at most 200 ?m and a height h such that a ratio of h to w is not greater than 1.

Abstract: Improved methods and apparatus for cleaning substrates and enhancing diffusion limited reaction at substrate surfaces use piezoelectric transducers operating in the gigasonic domain. The resonator assemblies include plural transducer stacks each including a thin film piezoelectric element coupled to a resonator plate that faces the substrate. At the disclosed frequencies and powers used, Eckart or Rayleigh streaming can be induced in a liquid treatment medium without substantial generation of cavitation.

Abstract: A device and method for treating the surface of a semiconductor wafer provides a treatment fluid in the form of a dispersion of gas bubbles in a treatment liquid generated at acoustic pressures less than those required to induce cavitation in the treatment liquid. A resonator supplies ultrasonic or megasonic energy to the treatment fluid and is configured to create an interference pattern in the treatment fluid comprising regions of pressure amplitude minima and maxima at an interface of the treatment fluid and the semiconductor wafer.

Abstract: A device and method for treating the surface of a semiconductor wafer provides a treatment fluid in the form of a dispersion of gas bubbles in a treatment liquid generated at acoustic pressures less than those required to induce cavitation in the treatment liquid. A resonator supplies ultrasonic or megasonic energy to the treatment fluid and is configured to create an interference pattern in the treatment fluid comprising regions of pressure amplitude minima and maxima at an interface of the treatment fluid and the semiconductor wafer.

Abstract: Improved methods and apparatus for cleaning substrates and enhancing diffusion limited reaction at substrate surfaces use piezoelectric transducers operating in the gigasonic domain. The resonator assemblies include plural transducer stacks each including a thin film piezoelectric element coupled to a resonator plate that faces the substrate. At the disclosed frequencies and powers used, Eckart or Rayleigh streaming can be induced in a liquid treatment medium without substantial generation of cavitation.

Abstract: Methods and apparatus for creating and controlling transient cavitation are disclosed. An example method includes selecting a range of bubble sizes to be created in a liquid and selecting characteristics for an acoustic field to be applied to the liquid. The method further includes creating gas bubbles of the selected range of bubble sizes in the liquid, creating an acoustic field with the selected characteristics and subjecting the liquid to the acoustic field. In the example method, at least one of the range of bubble sizes and the characteristics of the acoustic field is selected in correspondence with the other so as to control transient cavitation in the liquid for the selected range of bubble sizes. Particularly, the methods and apparatus may be used for the cleaning of a surface, such as a semiconductor substrate.

Abstract: A method and apparatus for removing a first liquid from a surface of a substrate is provided. A second liquid is supplied to at least part of a surface of a substrate having a rotary movement. The rotary movement has a center of rotation and an edge of rotation. The second liquid is directed from the center of rotation to the edge of rotation using a nozzle. A dry zone is created on the substrate as the position of the spray moves from the center of rotation to the edge of rotation. As a result, the first liquid and the second liquid are removed from the surface of the substrate.

Abstract: The invention relates to a method for creating transient cavitation comprising the steps of creating gas bubbles having a range of bubble sizes in a liquid, creating an acoustic field and subjecting the liquid to the acoustic field, characterized in that the range of bubble sizes and/or the characteristics of the acoustic field are selected to tune them to each other, thereby controlling transient cavitation in the selected range of bubble sizes. It also relates to an apparatus suitable for performing the method according to the invention.

Abstract: The invention relates to a method for creating transient cavitation comprising the steps of creating gas bubbles having a range of bubble sizes in a liquid, creating an acoustic field and subjecting the liquid to the acoustic field, characterized in that the range of bubble sizes and/or the characteristics of the acoustic field are selected to tune them to each other, thereby controlling transient cavitation in the selected range of bubble sizes. It also relates to an apparatus suitable for performing the method according to the invention.

Abstract: A method for determining the presence of defects in a covering layer overlying an underlying layer in accordance with an embodiment of the invention comprises providing a substrate comprising the covering layer, where the covering layer is at least partially exposed. The covering layer is subjected to a first substance, such as a solvent, and then subjected to a light beam. An optical property of the covering layer is determined and compared with a threshold value. The presence of defects in the covering layer is determined by the difference of the optical property from the threshold value, where the optical property indicates a level of penetration of the first substance through the covering layer.

Abstract: A method for determining the presence of defects in a covering layer overlying an underlying layer in accordance with an embodiment of the invention comprises providing a substrate comprising the covering layer, where the covering layer is at least partially exposed. The covering layer is subjected to a first substance, such as a solvent, and then subjected to a light beam. An optical property of the covering layer is determined and compared with a threshold value. The presence of defects in the covering layer is determined by the difference of the optical property from the threshold value, where the optical property indicates a level of penetration of the first substance through the covering layer.