Abstract: A luminophore from the class of nitridic or oxynitridic luminophores with at least one cation M and an activator D, wherein a proportion x of the cation is replaced with Cu and D is at least one element from the series Eu, Ce, Sm, Yb and Tb

Abstract: A conversion LED comprising a chip which emits primary radiation and a luminescent substance-containing layer which is on the chip or positioned so that it intercepts the primary radiation emitted from the chip and which converts at least some of the primary radiation of the chip into secondary radiation, wherein a first luminescent substance of the A3B5O12:Ce garnet type which emits yellow green and a second luminescent substance of the MAlSiN3:Eu calsine type which emits orange red is used, wherein the peak wavelength of the primary radiation lies in the 435 to 455 nm range, the first luminescent substance being a garnet having essentially the cation A=75 to 100% Lu, remainder Y and a Ce content of 1.5 to 2.

Abstract: An illumination from the class of oxynitridosilicates, doped with bivalent europium and comprising a cation M2+, said illuminant corresponding to the basic formula M(l-c)Si202N2:Dc wherein the following holds good: M=Sr(1-x)Bax mit 0.3<x<0.7.

Abstract: A light system based on at least two chips, in particular LEDs containing chips may include at least one first chip capable of emitting a primary radiation, a layer containing a phosphor mounted in front of the first chip, for converting the primary radiation of the first chip into secondary radiation, at least one second chip capable of emitting a second primary radiation with a greater wavelength than the primary radiation, wherein the layer is arranged spaced apart from the first chip, wherein the second chip is arranged in such a way that its radiation is substantially not absorbed by the phosphor.

Abstract: An optoelectronic component comprises an organic layer sequence (1), which emits an electromagnetic radiation (15) having a first wavelength spectrum during operation, and also a dielectric layer sequence (2) and a wavelength conversion region (3) in the beam path of the electromagnetic radiation (15) emitted by the organic layer sequence (1). The wavelength conversion region (3) is configured to convert at least partially electromagnetic radiation having the first wavelength spectrum into an electromagnetic radiation (16) having a second wavelength spectrum. The dielectric layer sequence (2) is arranged in the beam path of the electromagnetic radiation (15) emitted by the organic layer sequence between the organic layer sequence (1) and the wavelength conversion region (3) and is at least partially opaque to an electromagnetic radiation having a third wavelength spectrum, which corresponds to at least one part of the second wavelength spectrum.

Abstract: LEDs having a low color temperature up to 5000 K, comprising a blue-emitting LED and, connected upstream thereof, two phosphors having a first phosphor from the class of the chliorosilicates and a second phosphor from the class of the nitridosilicates having the formula (Ca,Sr)2Si5N8:Eu.

Abstract: Various embodiments relate to an optoelectronic component, including a carrier element, on which at least one optoelectronic semiconductor chip is arranged, and a cover, which is mounted on the carrier element in a region extending circumferentially around the semiconductor chip and together with the carrier element forms a sealed cavity in which the at least one optoelectronic semiconductor chip is arranged in an inert gas.

Abstract: A red-emitting luminescent material that belongs to the class of nitridosilicates and is doped with at least one activator D, in particular Eu, wherein the material is a modified D-doped alkaline earth nitridosilicate M2Si5N8, where M=one or more elements belonging to the group Sr, Ca, Ba, with the nitridosilicate having been stabilized by an oxidic or oxinitridic—in particular alkaline earth—phase.

Abstract: An optoelectronic component includes a layer sequence having an active region that emits primary electromagnetic radiation, wherein the primary electromagnetic radiation has a wavelength of 430 nm to 470 nm, a conversion material arranged in a beam path of the primary electromagnetic radiation and at least partly converts the primary electromagnetic radiation into a secondary electromagnetic radiation, wherein the conversion material includes a first phosphor having general composition A3B5O12, wherein A is a combination of Lu and Ce, and wherein B is a combination of Al and Ga.

Abstract: There is herein described an LED light source comprising an LED and a ceramic wavelength converter positioned to receive at least a portion of the light emitted by said LED, said ceramic wavelength converter converting at least a portion of the light emitted by said LED into light of a different wavelength, said ceramic wavelength converter comprising a chlorosilicate phosphor and having a density at least about 90% of theoretical density. The chlorosilicate phosphor is preferably a green-emitting Ca8Mg(SiO4)4Cl2:Eu2+ phosphor.

Abstract: An LED light system may include a primary LED radiation source, in particular at least one blue- or UV-emitting semiconductor element, wherein a first dome of transparent or translucent material, which acts as a conversion element, is placed in front of the primary light source in the emission direction, wherein at least a part of the surface of the first dome is divided into at least two regions of different types, which comprise luminescent materials, the at least two regions including different luminescent materials for the conversion.

Abstract: A thermally stable phosphor made of the M-Si—O—N system, having a cation M and an activator D, M being represented by Ba or Sr alone or as a mixture and optionally also being combined with at least one other element from the group Ca, Mg, Zn, Cu. The phosphor is activated with Eu or Ce or Tb alone or as a mixture, optionally in codoping with Mn or Yb. The activator D partially replaces the cation M. The phosphor is produced from the charge stoichiometry MO—SiO2—SiN4/3 with an increased oxygen content relative to the known phosphor MSi2O2N2:D, where MO is an oxidic compound.

Abstract: A light source includes a primary radiation source, which emits radiation in the shortwave range of the optical spectral range, wherein this radiation is converted at least by means of a first luminescent substance entirely or partially into secondary longer-wave radiation in the visible spectral range, wherein the first luminescent substance originates from the class of nitridic modified orthosilicates (NOS), wherein the luminescent substance has as a component M predominantly the group EA=Sr, Ba, Ca, or Mg alone or in combination, wherein the activating dopant D is composed at least of Eu and replaces a proportion of M, and wherein a proportion of SiO2 is introduced in deficiency, so that a modified sub-stoichiometric orthosilicate is provided, wherein the orthosilicate is an orthosilicate stabilized with RE and N, where RE=rare earth metal.

Abstract: A wavelength conversion body (1; 11) for generating wavelength-converted light (S) from primary light (P) shone into the wavelength conversion body (1; 11), comprising: a light guide body (2; 12) which is optically transmissive for the primary light (P) and the wavelength-converted light; (S), and at least one phosphor body (6; 16) having a phosphor, wherein the light guide body (2; 12) is monolithically connected to the at least one phosphor body (6; 16).

Abstract: The invention relates to an illuminant mixture for a discharge lamp (1) with a first and at least one second illuminant composition, said first illuminant composition having an emission spectrum in the green to yellow spectral range and having a first illuminant compound, devoid of Tb and designed to absorb the UV radiation emitted by an Hg source. The invention also relates to a discharge lamp (1) with a discharge vessel (2) and an illuminant layer (12) applied thereto, said layer containing the illuminant mixture according to the invention.

Abstract: A phosphor mixture for a discharge lamp, which includes a first phosphor compound and a second phosphor compound, wherein the first phosphor compound has an emission spectrum in the green and/or yellow spectral range and absorbs the UV radiation emitted by an Hg source and the radiation in the blue spectral range emitted by the Hg source, characterized in that the first phosphor compound of the phosphor mixture comprises (Ba,Sr,Ca)2SiO4:Eu and/or (Srl-x-yBaxCay)Si2O2N2:Eu(SrSiON), as a constituent, and the second phosphor compound of the phosphor mixture comprises Y2O3:Eu, as a constituent; and the phosphor mixture has a color temperature of less than 2500 K.

Abstract: An optoelectronic component with a semiconductor body that comprises an active semiconductor layer sequence is disclosed, which is suitable for generating electromagnetic radiation of a first wavelength that is emitted from a front face of the semiconductor body. The component also comprises a first wavelength conversion substance following the semiconductor body in its direction of emission, which converts radiation of the first wavelength into radiation of a second wavelength different from the first wavelength, and a first selectively reflecting layer between the active semiconductor layer sequence and the first wavelength conversion substance that selectively reflects radiation of the second wavelength and is transparent to radiation of the first wavelength.

Abstract: A radiation-emitting component includes: a radiation source containing semiconductor materials which emits first radiation of a first wavelength when in operation; a transparent body including a matrix material and an inorganic filler and arranged at least in part in the beam path of the first radiation; and a converter material arranged at least in part in the beam path of the first radiation and which converts first radiation at least in part into second radiation of a second, longer wavelength.

Abstract: A light system based on at least two chips, in particular LEDs containing chips, wherein a means for at least partially converting the radiation of a first chip is provided, wherein a layer containing a phosphor as conversion means is mounted in front of a first chip intended for the conversion, which phosphor-containing layer convers at least some of the primary radiation of the first chip into secondary radiation, wherein the second chip emits radiation with a greater wavelength than the first chip, wherein the layer is arranged spaced apart from the first chip, wherein the second chip is arranged in such a way that its radiation is substantially not absorbed by the phosphor.

Abstract: An optoelectronic semiconductor component comprising a light source, a housing and electrical connections, wherein the light source emits primary radiation having a peak wavelength in the range of 420 to 460 nm and having a flank of the primary emission which extends into the range less than 420 nm, wherein the radiation of the flank range or of part thereof is converted into visible radiation by an additive phosphor.