Abstract: An illumination system of a microlithographic projection apparatus includes a spatial light modulator having a modulation surface including a plurality of micromirrors. Each micromirror includes a mirror surface having an orientation that can be changed individually for each micromirror. For at least one of the micromirrors, at least one parameter that is related to the mirror surface is measured. The orientation of the mirror surfaces is controlled depending on the at least one measured parameter. A light pattern is produced on the modulation surface, and an image of the light pattern is formed on an optical integrator that has a plurality of light entrance facets. Images of the light entrance facets are superimposed on a mask.

Abstract: A method of operating an illumination system of a microlithographic projection exposure apparatus is provided. A set of illumination parameters that describe properties of a light bundle which converges at a point on a mask to be illuminated by the illumination system is first determined. Optical elements whose optical effect on the illumination parameters can be modified as a function of control commands are furthermore determined, as well as sensitivities with which the illumination parameters react to an adjustment of the optical elements, induced by the control commands. The control commands are then determined while taking the previously determined sensitivities into account, such that deviations of the illumination parameters from predetermined target illumination parameters satisfy a predetermined minimisation criterion. These control commands are applied to the optical elements, before the mask is illuminated.

Abstract: A method of operating an illumination system of a microlithographic projection exposure apparatus is provided. A set of illumination parameters that describe properties of a light bundle which converges at a point on a mask to be illuminated by the illumination system is first determined. Optical elements whose optical effect on the illumination parameters can be modified as a function of control commands are furthermore determined, as well as sensitivities with which the illumination parameters react to an adjustment of the optical elements, induced by the control commands. The control commands are then determined while taking the previously determined sensitivities into account, such that deviations of the illumination parameters from predetermined target illumination parameters satisfy a predetermined minimization criterion. These control commands are applied to the optical elements, before the mask is illuminated.

Abstract: A raster arrangement includes at least one raster element of a first type and at least one raster element of a second type. Each raster element of the first type has a first bundle-influencing effect. Each raster element of the second type has a second bundle-influencing effect which is different from the first bundle-influencing effect. Each raster element of the first type is located in a first area of the raster arrangement. Each raster element of the second type is located in a second area of the raster arrangement which is different from the first area of the raster arrangement.

Abstract: An illumination system of a microlithographic projection apparatus includes a spatial light modulator having a modulation surface including a plurality of micromirrors. Each micromirror includes a mirror surface having an orientation that can be changed individually for each micromirror. For at least one of the micromirrors, at least one parameter that is related to the mirror surface is measured. The orientation of the mirror surfaces is controlled depending on the at least one measured parameter. A light pattern is produced on the modulation surface, and an image of the light pattern is formed on an optical integrator that has a plurality of light entrance facets. Images of the light entrance facets are superimposed on a mask.

Abstract: An illumination system of a microlithographic projection exposure apparatus includes a light source to produce projection light beam, and a first and a second diffractive optical element between the light source and a pupil plane of the illumination system. The diffractive effect produced by each diffractive optical element depends on the position of a light field that is irradiated by the projection light on the diffractive optical elements. A displacement mechanism changes the mutual spatial arrangement of the diffractive optical elements. In at least one of the mutual spatial arrangements, which can be obtained with the help of the displacement mechanism, the light field extends both over the first and the second diffractive optical element. This makes it possible to produce in a simple manner continuously variable illumination settings.

Abstract: An illumination system of a microlithographic projection exposure apparatus includes a pupil forming unit directing light on a spatial light modulator that transmits or reflects impinging light in a spatially resolved manner. An objective images a light exit surface of the spatial light modulator on light entrance facets of an optical integrator so that an image of an object area on the light exit surface completely coincides with one of the light entrance facets. The pupil forming unit and the spatial light modulator are controlled so that the object area is completely illuminated by the pupil forming unit and projection light associated with a point in the object area is at least partially and variably prevented from impinging on the one of the light entrance facets.

Abstract: A method of operating an illumination system of a microlithographic projection exposure apparatus is provided. A set of illumination parameters that describe properties of a light bundle which converges at a point on a mask to be illuminated by the illumination system is first determined. Optical elements whose optical effect on the illumination parameters can be modified as a function of control commands are furthermore determined, as well as sensitivities with which the illumination parameters react to an adjustment of the optical elements, induced by the control commands. The control commands are then determined while taking the previously determined sensitivities into account, such that deviations of the illumination parameters from predetermined target illumination parameters satisfy a predetermined minimisation criterion. These control commands are applied to the optical elements, before the mask is illuminated.

Abstract: The invention relates to an optical system of a microlithographic projection exposure apparatus, in particular for operation in the EUV, comprising at least one polarization-influencing arrangement having a first reflection surface and a second reflection surface, wherein the first reflection surface and the second reflection surface are arranged at an angle of 0°±10° or at an angle of 90°±10° relative to one another, wherein light incident on the first reflection surface during the operation of the optical system forms an angle of 45°±5° with the first reflection surface, and wherein the polarization-influencing arrangement is rotatable about a rotation axis running parallel to the light propagation direction of light incident on the first reflection surface during the operation of the optical system.

Abstract: The invention relates to a method for compensating at least one defect of an optical system which includes introducing an arrangement of local persistent modifications in at least one optical element of the optical system, which does not have pattern elements on one of its optical surfaces, so that the at least one defect is at least partially compensated.

Abstract: An illumination optical unit for projection lithography illuminates an illumination field with illumination light of a primary light source. The illumination optical unit has a raster arrangement to predefine a shape of the illumination field, a transfer optical unit for the superimposing transfer of the illumination light toward the illumination field, and an illumination angle variation device which deflects the illumination light with different deflection angles. The illumination angle variation device has at least one displaceable illumination angle variation unit to generate a deflection angle for the illumination light.

Abstract: A method for measuring an optical symmetry property on a microlithographic projection exposure apparatus (10) together with a microlithographic projection exposure apparatus and an associated microlithographic measurement mask are disclosed. The method includes arranging at least one measurement structure (60; 66) in an exposure beam path (32) of the projection exposure apparatus, wherein the measurement structure includes a pinhole stop (62) and a diffraction grating (64) arranged within an aperture (63) of the pinhole stop. Furthermore, the method includes measuring an intensity of a diffracted radiation generated at the diffraction grating (64) after interaction of the radiation with at least one optical element (22) of the projection exposure apparatus.

Abstract: A method of operating an illumination system of a microlithographic projection exposure apparatus is provided. A set of illumination parameters that describe properties of a light bundle which converges at a point on a mask to be illuminated by the illumination system is first determined. Optical elements whose optical effect on the illumination parameters can be modified as a function of control commands are furthermore determined, as well as sensitivities with which the illumination parameters react to an adjustment of the optical elements, induced by the control commands. The control commands are then determined while taking the previously determined sensitivities into account, such that deviations of the illumination parameters from predetermined target illumination parameters satisfy a predetermined minimisation criterion. These control commands are applied to the optical elements, before the mask is illuminated.

Abstract: A raster arrangement includes at least one raster element of a first type and at least one raster element of a second type. Each raster element of the first type has a first bundle-influencing effect. Each raster element of the second type has a second bundle-influencing effect which is different from the first bundle-influencing effect. Each raster element of the first type is located in a first area of the raster arrangement. Each raster element of the second type is located in a second area of the raster arrangement which is different from the first area of the raster arrangement.

Abstract: A mirror serves for use for guiding illumination and imaging light in EUV projection lithography. The mirror has a reflective surface, the reflective surface forming a magnetic field in such a way that at least one polarization property of the illumination and imaging light is influenced via the magnetic field upon reflection. A mirror system has, besides the mirror, additionally a magnetization predefining device for predefining a magnetization of the reflective surface of the mirror. An illumination optical unit has at least one mirror of this type or at least one facet mirror device comprising at least one individual mirror constructed in this way. In the case of a mirror of this type, the illumination and/or imaging properties of illumination and/or imaging light guided via the mirror are improved.

Abstract: A collector for a projection exposure apparatus for microlithography comprises a plurality of reflective sections which are embodied and arranged in such a way that they can be impinged upon during the focusing of radiation from a first focus into a second focus with angles of impingement in a predefined angular spectrum.

Abstract: The invention relates to an illumination system of a microlithographic projection exposure apparatus comprising (a) a plurality of channels, each channel guiding a partial beam and at least one channel comprising at least one defect, and (b) at least one optical element arranged within the at least one channel having the at least one defect, the optical element being adapted to at least partially compensate the at least one defect of the partial beam of the channel.

Abstract: A microlithography illumination system includes a first raster arrangement including a first plurality of bundle-forming raster elements arranged in or adjacent a first plane of the illumination system. The first plurality of bundle-forming raster elements is configured to generate a raster arrangement of secondary light sources. The illumination system also includes a transmission optics configured to superimpose transmission of the illumination light of the secondary light sources into the object field. The transmission optics includes a second raster arrangement comprising a second plurality of bundle-forming raster elements. The illumination system further includes a displacement device configured to displace a displaceable segment of the first raster arrangement relative to the second raster arrangement. The displaceable segment includes exactly one of the raster elements, a group of several raster elements, a raster column, a raster area, or several groups of raster elements.

Abstract: A method of lithographically transferring a pattern on a light sensitive surface in a multiple exposure process comprises the following steps: a) providing a mask comprising a first mask pattern area and a second mask pattern area; b) directing projection light on the mask, thereby producing on the light sensitive surface a first exposed pattern area, which is an image of the first mask pattern area, and a second exposed pattern area, which is an image of the second mask pattern area. The projection light illuminating the first and second mask pattern area has different angular light distributions. c) repeating step b) using the same mask so that an image of the first mask pattern area is superimposed on the second exposure pattern area.

Abstract: An illumination system of a microlithographic projection exposure apparatus includes a light source to produce projection light beam, and a first and a second diffractive optical element between the light source and a pupil plane of the illumination system. The diffractive effect produced by each diffractive optical element depends on the position of a light field that is irradiated by the projection light on the diffractive optical elements. A displacement mechanism changes the mutual spatial arrangement of the diffractive optical elements. In at least one of the mutual spatial arrangements, which can be obtained with the help of the displacement mechanism, the light field extends both over the first and the second diffractive optical element. This makes it possible to produce in a simple manner continuously variable illumination settings.