Abstract: Examples of a multi-level memory with direct access are described. Examples include designating an amount of a non-volatile random access memory (NVRAM) for use as memory for a computer system. Examples also include designating a second amount of the NVRAM to for use as storage for the computing device. Examples also include re-designating at least a first portion of the first amount of NVRAM from use as memory to use as storage.

Abstract: Systems and methods of interconnecting devices may include an input/output (IO) connector having a buffer with an integrated voltage regulator. The integrated voltage regulator may include a first supply output and a second supply output, wherein the IO connector includes an IO power contact coupled to the first supply output. The IO connector may also include a logic power contact coupled to the second supply output. In one example, a host device may issue power management commands to the buffer in order to scale the second supply output independently of the first supply output.

Abstract: In an embodiment, a memory controller may determine that one or more neighboring memory cells associated with a target memory cell in a memory device are to be refreshed. The controller may generate a command associated with refreshing the one or more neighboring memory cells. The controller may transfer the command from the memory controller to the memory device containing the target memory cell. The command may direct the memory device to refresh the neighboring memory cells and/or return one or more addresses associated with the neighboring memory cells.

Abstract: Provided are an apparatus and method for processing sequential writes portions of an addressable unit memory dies to store data. A write to a first portion of an addressable unit is received and the write is written to the first portion of the addressable unit. A next write is received to a next portion of the addressable unit following a previous write to a previous portion of the addressable unit. The next write is written to the next portion of the addressable unit sequentially following the previous portion in response to the next write being sequential with respect to the previous write. Data other than the next write is written to the addressable unit following the previous portion in response to the next write not being sequential with respect to the previous write.

Abstract: Provided are an apparatus and method for processing sequential writes to a block group of physical blocks in a memory device. Sequential write data for a plurality of consecutive logical addresses is received and a determination is made of consecutive physical blocks comprising a block group. Each of the physical blocks has data for a plurality of the consecutive logical addresses. The sequential write data is written to consecutive physical data locations having data for the determined consecutive physical blocks of the block group. The block group metadata for the block group is updated.

Abstract: Examples of a multi-level memory with direct access are described. Examples include designating an amount of a non-volatile random access memory (NVRAM) for use as memory for a computer system. Examples also include designating a second amount of the NVRAM to for use as storage for the computing device. Examples also include re-designating at least a first portion of the first amount of NVRAM from use as memory to use as storage.

Abstract: A multi-core processor providing heterogeneous processor cores and a shared cache is presented.

Abstract: A multi-core processor providing heterogeneous processor cores and a shared cache is presented.

Abstract: Examples of a multi-level memory with direct access are described. Examples include designating an amount of a non-volatile random access memory (NVRAM) for use as memory for a computer system. Examples also include designating a second amount of the NVRAM to for use as storage for the computing device. Examples also include re-designating at least a first portion of the first amount of NVRAM from use as memory to use as storage.

Abstract: Examples of a multi-level memory with direct access are described. Examples include designating an amount of a non-volatile random access memory (NVRAM) for use as memory for a computer system. Examples also include designating a second amount of the NVRAM to for use as storage for the computing device. Examples also include re-designating at least a first portion of the first amount of NVRAM from use as memory to use as storage.

Abstract: A multi-core processor providing heterogeneous processor cores and a shared cache is presented.

Abstract: In an embodiment, a memory controller may determine that one or more neighboring memory cells associated with a target memory cell in a memory device are to be refreshed. The controller may generate a command associated with refreshing the one or more neighboring memory cells. The controller may transfer the command from the memory controller to the memory device containing the target memory cell. The command may direct the memory device to refresh the neighboring memory cells and/or return one or more addresses associated with the neighboring memory cells.

Abstract: Examples of a multi-level memory with direct access are described. Examples include designating an amount of a non-volatile random access memory (NVRAM) for use as memory for a computer system. Examples also include designating a second amount of the NVRAM to for use as storage for the computing device. Examples also include re-designating at least a first portion of the first amount of NVRAM from use as memory to use as storage.

Abstract: Systems and methods of interconnecting devices may include a connector assembly having a substrate, a set of input/output (IO) contacts, an antenna structure and transceiver logic. In one example, the transceiver logic may process one or more IO signals associated with the antenna structure and process one or more IO signals associated with the set of IO contacts.

Abstract: A multi-core processor providing heterogeneous processor cores and a shared cache is presented.

Abstract: In an embodiment, a memory controller may determine that one or more neighboring memory cells associated with a target memory cell in a memory device are to be refreshed. The controller may generate a command associated with refreshing the one or more neighboring memory cells. The controller may transfer the command from the memory controller to the memory device containing the target memory cell. The command may direct the memory device to refresh the neighboring memory cells and/or return one or more addresses associated with the neighboring memory cells.

Abstract: Embodiments of a method, device, and system for implementing multi-level memory with direct access are disclosed. In one embodiment, the method includes designating an amount of a non-volatile random access memory (NVRAM) in a computer system to be utilized as a memory alternative for a dynamic random access memory (DRAM). The method continues by designating a second amount of the NVRAM to be utilized as a storage alternative for a mass storage device. Then the method re-designates at least a first portion of the first amount of NVRAM from the memory alternative designation to the storage alternative designation during operation of the computer system. Finally, the method re-designates at least a first portion of the second amount of NVRAM from the storage alternative designation to the memory alternative designation during operation of the computer system.

Abstract: A multi-core processor providing heterogeneous processor cores and a shared cache is presented.

Abstract: Methods and apparatus related to management and/or support of metadata for PCMS (Phase Change Memory with Switch) devices are described. In one embodiment, a PCMS controller allows access to a PCMS device based on metadata. The metadata may be used to provide efficiency, endurance, error correction, etc. as discussed in the disclosure. Other embodiments are also disclosed and claimed.

Abstract: In an embodiment, a memory controller may determine that one or more neighboring memory cells associated with a target memory cell in a memory device are to be refreshed. The controller may generate a command associated with refreshing the one or more neighboring memory cells. The controller may transfer the command from the memory controller to the memory device containing the target memory cell. The command may direct the memory device to refresh the neighboring memory cells and/or return one or more addresses associated with the neighboring memory cells.