Abstract: A process of forming an electronic device can include placing a seed layer into an electroplating solution within an electroplating tool. The electroplating tool can include a first electrode and a second electrode, wherein the first electrode is electrically connected to the seed layer. The process can also include depositing a first portion of a conductive layer using a first signal of a first type (e.g., direct current) between the first electrode and a second electrode, and depositing a second portion of the conductive layer over the first portion of the conductive layer, using a second signal of a second type (e.g., alternating current) between the first electrode and the second electrode of the electroplating tool.

Abstract: An apparatus and method for optical heterodyne conversion and a radiation source and integrated diagnostics using the apparatus and method are disclosed. The radiation source can operate in a high-power narrow-band mode in which a constant-frequency output is provided or in a low-power broadband mode in which the frequency is tunable to allow the radiation source to act as a sweep oscillator. The apparatus or photomixer includes two sets of interdigitated conductive electrodes formed on top of a crystal lattice formed of column III-V compounds, particularly InAlGaAs compounds. Additional column V atoms are interspersed within the lattice structure to form defect energy states in the bandgap of the host material. The region of the material between the interdigitated electrodes is illuminated by optical radiation containing two different frequencies. Photon absorption in the material causes a current at the difference frequency to be generated and coupled to the interdigitated electrodes.

Abstract: A new III-V buffer or passivation material is described which is produced by low temperature growth (LTG) of III-V compounds. The material has unique and desirable properties, particularly for closely spaced, submicron gate length active III-V semiconductor FET devices, such as HEMT's, MESFET's and MISFET's. The LTG material is grown under ambient conditions which incorporate an excess of the more volatile of the III-V species into the grown material. The new material is crystalline, highly resistive, relatively insensitive to light, and can be overgrown with high quality III-V active layers or used as a passivation material to insulate and protect active device structures.

Abstract: An electrical power distribution system of an industrial plant or a commercial building and having a capacity for delivering at least 500 KVA, includes a voltage step-down transformer connected between an AC source of electrical energy and a pair of power distribution line conductors across which there is connected a pulsed inductive load, such as a motor with a thyrister speed controller. The power factor of the system is corrected by a power factor correction capacitor connected directly across the system power distribution line conductors. Pulsed inductive loads tend to excite large harmonic currents in such systems having both a transformer and a power factor correction capacitor directly across the distribution line conductors. A filter, made up of a filter capacitor and a filter inductor tuned exactly to one harmonic, are connected in a series circuit branch that is connected directly across the system power distribution line conductors.

Abstract: An ultra-high-speed photoconductive device is described which comprises a homoepitaxial semi-insulating III-V layer, or body, upon which ohmic/conductive contacts, or strips, separated by a small gap, are formed. The semi-insulating body, or layer, is produced by low temperature growth of III-V compounds by MBE. In a GaAs embodiment, the layer is grown under arsenic stable growth conditions, at a substrate temperature preferably in the range of 150.degree. to about 300.degree. C.

Abstract: An ultra-high-speed photoconductive device is described which comprises a homoepitaxial semi-insulating III-V layer, or body, upon which ohmic/conductive contacts, or strips, separated by a small gap, are formed. The semi-insulating body, or layer, is produced by low temperature growth of III-V compounds by MBE. In a GaAs embodiment, the layer is grown under arsenic stable growth conditions, at a substrate temperature preferably in the range of 150.degree. to about 300.degree. C.

Abstract: A new III-IV buffer material is described which is produced by low temperature growth of III-V compounds by MBE that has unique and desirable properties, particularly for closely spaced, submicron gate length active III-V semiconductor devices, such as HEMT's, MESFET's and MISFET's. In the case of the III-V material, GaAs, the buffer is grown under arsenic stable growth conditions, at a growth rate of 1 micron/hour, and at a substrate temperature preferably in the range of 150 to about 300.degree. C. The new material is crystalline, highly resistive, optically inactive, and can be overgrown with high quality III-V active layers.