Abstract: Disclosed is a fuselage assembly (100) configured to be attached to a mast assembly (50) of a powered hydrofoil watercraft (1). The fuselage assembly (100) comprises a mast assembly fixation section (106) and an outer housing portion (170) which accommodates, in particular surrounds or encases, a propulsion device (200), in particular an impeller (201), and which outer housing portion (170) at least partially limits an outer dimension of a flow channel (161) through which water is transported during operation of the hydrofoil watercraft (1). The outer housing portion (170) comprises an attachment portion (310) on which a tail unit (300), in particular 10 comprising a stabilizing member (301) such as a stabilizing wing (302), is formed or attachable thereto. In addition or alternatively, the propulsion device (200) may be accommodated in the outer housing portion (170) such that a user is prevented from touching the propulsion device (200).

Abstract: The present disclosure provides a vehicle having a storage assembly for storing and dispensing a pressurized gas. The storage assembly includes a first storage cylinder section and a second storage cylinder section that each have multiple storage cylinders arranged longitudinally parallel to one another in a first layer and at least in a second layer. The storage cylinders are fluidically connected to one another in a meandering manner by a plurality storage cylinder loops. Each of the storage cylinder loops is connected to an axial end of a storage cylinder disposed in the first layer and an axial end of a storage cylinder disposed in the second layer. The storage assembly includes a cross member frictionally connected to the body of the vehicle and arranged in an interstice defined between the first and second storage cylinder sections.

Abstract: The present disclosure provides a vehicle having a storage assembly for storing and dispensing a pressurized gas. The storage assembly includes a first storage cylinder section and a second storage cylinder section that each have multiple storage cylinders arranged longitudinally parallel to one another in a first layer and at least in a second layer. The storage cylinders are fluidically connected to one another in a meandering manner by a plurality storage cylinder loops. Each of the storage cylinder loops is connected to an axial end of a storage cylinder disposed in the first layer and an axial end of a storage cylinder disposed in the second layer. The storage assembly includes a cross member frictionally connected to the body of the vehicle and arranged in an interstice defined between the first and second storage cylinder sections.

Abstract: The present invention relates to a pressure tank arrangement for storing and discharging compressed liquid fuels and to a method for producing a pressure tank arrangement of this type. Here, force transmission elements of the pressure tank arrangement are arranged in such a way that they utilize the available installation space for pressure tank arrangements of this type in an optimum manner.

Abstract: The disclosure relates to a semiconductor structure comprising: a first semiconductor layer, a first program transistor, and a first select transistor implementing a first antifuse cell, wherein the first semiconductor layer acts as the body of the first program transistor and as the body of the first select transistor, wherein a gate of the first program transistor and a gate of the first select transistor are on different sides of the first semiconductor layer.

Abstract: The invention relates to a method for producing a pressure accumulator (1), in particular for storing hydrogen in motor vehicles. First, a pressure accumulator liner (3) which has at least one pole cap (2, 2?) is produced preferably by means of a plastic blow molding method, and the outside of the liner (3) is then provided, preferably braided, with a multi-ply reinforcing layer (9), which has reinforcing fibers (8). According to the invention, a fiber supply cap (10, 10?) is applied on the pole cap (2, 2?) prior to applying the reinforcing fibers (8), the outer surface of the fiber supply cap being spaced from the pole region (21, 21?) of the pole cap (2, 2?).

Abstract: The present invention relates to a device for the storage and delivery of liquid and/or gaseous media under pressure, having a media container (1) of a plastics material, preferably of polyamide, receiving the medium, at least one valve connection element (2), connected to the media container (1), and at least one valve element (3, 3a, 3b), connectable to the valve connection element (2), wherein the media container (1) has a collar (4), which is molded on in one piece and protrudes from the media container (1) and has a collar outer wall (5) and a collar inner wall (6).

Abstract: The invention relates to a method for producing a pressure accumulator (1), in particular for storing hydrogen in motor vehicles. First, a pressure accumulator liner (3) which has at least one pole cap (2, 2?) is produced preferably by means of a plastic blow molding method, and the outside of the liner (3) is then provided, preferably braided, with a multi-ply reinforcing layer (9), which has reinforcing fibers (8). According to the invention, a fiber supply cap (10, 10?) is applied on the pole cap (2, 2?) prior to applying the reinforcing fibers (8), the outer surface of the fiber supply cap being spaced from the pole region (21, 21?) of the pole cap (2, 2?).

Abstract: The present invention relates to a method for polarizing at least a first finfet transistor and a second finfet transistor, wherein the first finfet transistor has a fin width bigger than the fin width of the second finfet transistor, and both the first finfet transistor and the second finfet transistor have a back gate, and the method comprising applying the same first voltage on the back gate of the first finfet transistor and on the back gate of the second finfet transistor so as to reduce the spread between the off-current value of the first finfet transistor and the off-current value of the second finfet transistor.

Abstract: This disclosure relates to an eDRAM memory element comprising a first storage node, a bitline node for accessing the value stored in the storage node, and a select transistor, controlling access from the bitline node to the storage node, wherein the select transistor has a front gate and a back gate.

Abstract: The present invention relates to a double-gate finFET comprising: at least two fins (FIN) realizing a single channel; a back-gate (BG) placed between the fins; and a front-gate (FG), placed outside of the fins. Further, the invention relates to a manufacturing process, resulting in the double-gate finFET.

Abstract: The present invention relates to a device for the storage and delivery of liquid and/or gaseous media under pressure, having a media container (1) of a plastics material, preferably of polyamide, receiving the medium, at least one valve connection element (2), connected to the media container (1), and at least one valve element (3, 3a, 3b), connectable to the valve connection element (2), wherein the media container (1) has a collar (4), which is moulded on in one piece and protrudes from the media container (1) and has a collar outer wall (5) and a collar inner wall (6).

Abstract: This disclosure relates to an eDRAM memory element comprising a first storage node, a bitline node for accessing the value stored in the storage node, and a select transistor, controlling access from the bitline node to the storage node, wherein the select transistor has a front gate and a back gate.

Abstract: The present invention relates to a method for polarizing at least a first finfet transistor and a second finfet transistor, wherein the first finfet transistor has a fin width bigger than the fin width of the second finfet transistor, and both the first finfet transistor and the second finfet transistor have a back gate, and the method comprising applying the same first voltage on the back gate of the first finfet transistor and on the back gate of the second finfet transistor so as to reduce the spread between the off-current value of the first finfet transistor and the off-current value of the second finfet transistor.

Abstract: The disclosure relates to a semiconductor structure comprising: a first semiconductor layer, a first program transistor, and a first select transistor implementing a first antifuse cell, wherein the first semiconductor layer acts as the body of the first program transistor and as the body of the first select transistor, wherein a gate of the first program transistor and a gate of the first select transistor are on different sides of the first semiconductor layer.

Abstract: A biosensor array having a substrate, a plurality of biosensor zones arranged on the substrate, each of which has a first terminal and a second terminal, at least one drive line and at least one detection line, the at least one drive line being electrically insulated from the at least one detection line. In each case the first terminal of each biosensor zone is coupled to precisely one of the at least one drive line and the second terminal of each biosensor zone is coupled to precisely one of the at least one detection line, and at least one of the at least one drive line and at least one of the at least one detection line is coupled to at least two of the biosensor zones.

Abstract: The present invention relates to a method for the manufacture of a semiconductor device by providing a first substrate; providing a doped layer in a surface region of the first substrate; providing a buried oxide layer on the doped layer; providing a semiconductor layer on the buried oxide layer to obtain a semiconductor-on-insulator (SeOI) wafer; removing the buried oxide layer and the semiconductor layer from a first region of the SeOI wafer while maintaining the buried oxide layer and the semiconductor layer in a second region of the SeOI water; providing an upper transistor in the second region by forming a back gate in or by the doped layer; and providing a lower transistor in the first region by forming source and drain regions in or by the doped layer.

Abstract: A sensor arrangement for detecting particles potentially contained in an analyte is disclosed. The arrangement includes a substrate; at least one sensor electrode which is arranged on and/or in the substrate and on which scavenger molecules, which hybridize with particles that are potentially contained in an analyte and are to be detected, are immobilized, electrically charged particles generated by hybridization being detectable on the at least one sensor electrode; and at least one diffusion detection electrode which is arranged in a surrounding region of the at least one sensor electrode and is embodied in such a way that it detects electrically charged particles that are generated by hybridization and can be diffused away by the at least one sensor electrode.

Abstract: An integrated circuit is described. The integrated circuit may comprise a multitude of floating-gate electrodes, wherein at least one of the floating-gate electrodes has a lower width and an upper width, the lower width being larger than the upper width, and wherein the at least one of the floating-gate electrodes comprises a transition metal. A corresponding manufacturing method for an integrated circuit is also described.

Abstract: An integrated circuit with stacked devices. One embodiment provides a surface of a first semiconductor structure of a first crystalline semiconductor material including first and second portions. First structures are formed on the first portions. The second portions remain uncovered. Sacrificial structures of a second, different crystalline material are formed on the second portions. A second semiconductor structure of the first crystalline semiconductor material is formed over the sacrificial structures and over the first structures.