Patents by Inventor Fred Alokozai
Fred Alokozai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160013024Abstract: A processing chamber including a reaction chamber having a processing area, a processing gas inlet in communication with the processing area, a first excited species generation zone in communication with the processing gas inlet and a second exited species generation zone in communication with the processing gas inlet. A method of processing a substrate including the steps of loading a substrate within a processing area, activating a first excited species generation zone to provide a first excited species precursor to the processing area during a first pulse and, activating a second excited species generation zone to provide a second excited species precursor different from the first excited species precursor to the processing area during a second pulse.Type: ApplicationFiled: March 16, 2015Publication date: January 14, 2016Inventors: Robert Brennan Milligan, Fred Alokozai
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Patent number: 9228259Abstract: A method for treating a deposition reactor is disclosed. The method removes or mitigates formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.Type: GrantFiled: January 28, 2014Date of Patent: January 5, 2016Assignee: ASM IP Holding B.V.Inventors: Suvi Haukka, Eric James Shero, Fred Alokozai, Dong Li, Jereld Lee Winkler, Xichong Chen
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Publication number: 20150184291Abstract: Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma gas-feed inlet located to supply plasma gas to a plasma generation region within the film deposition reactor and a precursor gas-feed inlet located to supply film precursor gas downstream of the plasma generation region; an insulating confinement vessel configured to maintain a plasma generation region at a reduced pressure within the film deposition reactor and an inductively-coupled plasma (ICP) coil arranged around a portion of a sidewall of the insulating confinement vessel and positioned so that the sidewall separates the plasma generation region from the ICP coil; and a susceptor configured to support the semiconductor substrate so that a film deposition surface of the semiconductor substrate is exposed to a reaction region formed downstream of the process gas distributor.Type: ApplicationFiled: March 16, 2015Publication date: July 2, 2015Inventors: Fred Alokozai, Robert Brennan Milligan
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Publication number: 20150167159Abstract: A reaction chamber including an upper region for processing a substrate, a lower region for loading a substrate, a susceptor movable within the reaction chamber, a first sealing member positioned on a perimeter of the susceptor, a second sealing member positioned between the upper region and the lower region, wherein the first and second sealing members are selectively engaged with one another to limit communication between the upper region and the lower region.Type: ApplicationFiled: February 27, 2015Publication date: June 18, 2015Inventors: Michael Halpin, Eric Shero, Carl White, Fred Alokozai, Jerry Winkler, Todd Dunn
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Patent number: 9029253Abstract: Nitrogen-containing phase-stabilized films, methods of forming phase-stabilized films, and structures and devices including the phase-stabilized films are disclosed. The phase-stabilized films include a matrix material and a phase stabilizer, which provides a morphologically stabilizing effect to a matrix material within the films. The phase-stabilized films may be used as, for example, gate electrodes and similar films in microelectronic devices.Type: GrantFiled: May 1, 2013Date of Patent: May 12, 2015Assignee: ASM IP Holding B.V.Inventors: Robert Brennan Milligan, Fred Alokozai
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Patent number: 9021985Abstract: Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma gas-feed inlet located to supply plasma gas to a plasma generation region within the film deposition reactor and a precursor gas-feed inlet located to supply film precursor gas downstream of the plasma generation region; an insulating confinement vessel configured to maintain a plasma generation region at a reduced pressure within the film deposition reactor and an inductively-coupled plasma (ICP) coil arranged around a portion of a sidewall of the insulating confinement vessel and positioned so that the sidewall separates the plasma generation region from the ICP coil; and a susceptor configured to support the semiconductor substrate so that a film deposition surface of the semiconductor substrate is exposed to a reaction region formed downstream of the process gas distributor.Type: GrantFiled: September 12, 2012Date of Patent: May 5, 2015Assignee: ASM IP Holdings B.V.Inventors: Fred Alokozai, Robert Brennan Milligan
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Patent number: 9018111Abstract: A processing chamber including a reaction chamber having a processing area, a processing gas inlet in communication with the processing area, a first excited species generation zone in communication with the processing gas inlet and a second exited species generation zone in communication with the processing gas inlet. A method of processing a substrate including the steps of loading a substrate within a processing area, activating a first excited species generation zone to provide a first excited species precursor to the processing area during a first pulse and, activating a second excited species generation zone to provide a second excited species precursor different from the first excited species precursor to the processing area during a second pulse.Type: GrantFiled: July 22, 2013Date of Patent: April 28, 2015Assignee: ASM IP Holding B.V.Inventors: Robert Brennan Milligan, Fred Alokozai
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Patent number: 9005539Abstract: A reaction chamber including an upper region for processing a substrate, a lower region for loading a substrate, a susceptor movable within the reaction chamber, a first sealing member positioned on a perimeter of the susceptor, a second sealing member positioned between the upper region and the lower region, wherein the first and second sealing members are selectively engaged with one another to limit communication between the upper region and the lower region.Type: GrantFiled: November 14, 2012Date of Patent: April 14, 2015Assignee: ASM IP Holding B.V.Inventors: Michael Halpin, Eric Shero, Carl White, Fred Alokozai, Jerry Winkler, Todd Dunn
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Publication number: 20150096973Abstract: A wafer processing apparatus may include a susceptor having a top side and a backside, a susceptor heater having a spacing member and a heating member, a shim removably mounted between the susceptor and the susceptor heater, a cavity formed by the susceptor backside, the susceptor heater, and the shim, a fluid inlet communicating with the cavity, and a plurality of fluid outlets communicating with the cavity.Type: ApplicationFiled: December 8, 2014Publication date: April 9, 2015Inventors: Todd Dunn, Fred Alokozai, Jerry Winkler, Michael Halpin
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Publication number: 20150024609Abstract: A processing chamber including a reaction chamber having a processing area, a processing gas inlet in communication with the processing area, a first excited species generation zone in communication with the processing gas inlet and a second exited species generation zone in communication with the processing gas inlet. A method of processing a substrate including the steps of loading a substrate within a processing area, activating a first excited species generation zone to provide a first excited species precursor to the processing area during a first pulse and, activating a second excited species generation zone to provide a second excited species precursor different from the first excited species precursor to the processing area during a second pulse.Type: ApplicationFiled: July 22, 2013Publication date: January 22, 2015Applicant: ASM IP Holding B.V.Inventors: Robert Brennan Milligan, Fred Alokozai
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Patent number: 8933375Abstract: A wafer processing apparatus may include a susceptor having a top side and a backside, a susceptor heater having a spacing member and a heating member, a shim removably mounted between the susceptor and the susceptor heater, a cavity formed by the susceptor backside, the susceptor heater, and the shim, a fluid inlet communicating with the cavity, and a plurality of fluid outlets communicating with the cavity.Type: GrantFiled: June 27, 2012Date of Patent: January 13, 2015Assignee: ASM IP Holding B.V.Inventors: Todd Dunn, Fred Alokozai, Jerry Winkler, Michael Halpin
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Patent number: 8894870Abstract: A system and method for etching a material, including a compound having a formulation of XYZ, wherein X and Y are one or more metals and Z is selected from one or more Group 13-16 elements, such as carbon, nitrogen, boron, silicon, sulfur, selenium, and tellurium, are disclosed. The method includes a first etch process to form one or more first volatile compounds and a metal-depleted layer and a second etch process to remove at least a portion of the metal-depleted layer.Type: GrantFiled: March 4, 2013Date of Patent: November 25, 2014Assignee: ASM IP Holding B.V.Inventors: Jereld Lee Winkler, Eric James Shero, Fred Alokozai
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Publication number: 20140217065Abstract: A system and method for etching a material, including a compound having a formulation of XYZ, wherein X and Y are one or more metals and Z is selected from one or more Group 13-16 elements, such as carbon, nitrogen, boron, silicon, sulfur, selenium, and tellurium, are disclosed. The method includes a first etch process to form one or more first volatile compounds and a metal-depleted layer and a second etch process to remove at least a portion of the metal-depleted layer.Type: ApplicationFiled: March 4, 2013Publication date: August 7, 2014Applicant: ASM IP HOLDING B.V.Inventors: Jereld Lee Winkler, Eric James Shero, Fred Alokozai
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Publication number: 20140220247Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.Type: ApplicationFiled: January 28, 2014Publication date: August 7, 2014Applicant: ASM IP Holding B.V.Inventors: Suvi Haukka, Eric James Shero, Fred Alokozai, Dong Li, Jereld Lee Winkler, Xichong Chen
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Publication number: 20140073143Abstract: Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma gas-feed inlet located to supply plasma gas to a plasma generation region within the film deposition reactor and a precursor gas-feed inlet located to supply film precursor gas downstream of the plasma generation region; an insulating confinement vessel configured to maintain a plasma generation region at a reduced pressure within the film deposition reactor and an inductively-coupled plasma (ICP) coil arranged around a portion of a sidewall of the insulating confinement vessel and positioned so that the sidewall separates the plasma generation region from the ICP coil; and a susceptor configured to support the semiconductor substrate so that a film deposition surface of the semiconductor substrate is exposed to a reaction region formed downstream of the process gas distributor.Type: ApplicationFiled: September 12, 2012Publication date: March 13, 2014Applicant: ASM IP HOLDINGS B.V.Inventors: Fred Alokozai, Robert Brennan Milligan
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Publication number: 20140000843Abstract: A wafer processing apparatus may include a susceptor having a top side and a backside, a susceptor heater having a spacing member and a heating member, a shim removably mounted between the susceptor and the susceptor heater, a cavity formed by the susceptor backside, the susceptor heater, and the shim, a fluid inlet communicating with the cavity, and a plurality of fluid outlets communicating with the cavity.Type: ApplicationFiled: June 27, 2012Publication date: January 2, 2014Applicant: ASM IP Holding B.V.Inventors: Todd Dunn, Fred Alokozai, Jerry Winkler, Michael Halpin
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Publication number: 20130292676Abstract: Nitrogen-containing phase-stabilized films, methods of forming phase-stabilized films, and structures and devices including the phase-stabilized films are disclosed. The phase-stabilized films include a matrix material and a phase stabilizer, which provides a morphologically stabilizing effect to a matrix material within the films. The phase-stabilized films may be used as, for example, gate electrodes and similar films in microelectronic devices.Type: ApplicationFiled: May 1, 2013Publication date: November 7, 2013Applicant: ASM IP Holding B.V.Inventors: Robert Brennan Milligan, Fred Alokozai