Abstract: A process for treating a copper or copper alloy substrate surface with a composition and corrosion inhibitor solution to minimize defect formation and surface corrosion, the method including applying a composition including one or more chelating agents, a pH adjusting agent to produce a pH between about 3 and about 11, and deionized water, and then applying a corrosion inhibitor solution. The composition may further comprise a reducing agent and/or corrosion inhibitor. The method may further comprise applying the corrosion inhibitor solution prior to treating the substrate surface with the composition.

Abstract: Methods and apparatus are provided to provide a substantially uniform layer thickness above a wafer contour as the wafer rotates and is traversed past a pre-planarization tool. The tool has a shank defining an axis of rotation, and a planarization member coupled to the shank has a hook-shaped section supporting a pre-planarization surface spaced by an at-rest-distance from the axis of during an at-rest condition of the shank. The hook-shaped section has a modulus of elasticity selected so that upon rotation, the hook-shaped section flexes and moves the pre-planarization surface to rotation-distances spaced from the axis in response to a velocity of rotation of the hook-shaped section around the axis in a range of velocities. As the tool rotates, metrology intermittently directly senses the layer thickness and controls the velocity of rotation so the rotation-distances have values in excess of a value of the at-rest-distance.

Abstract: A method for processing a substrate is provided which includes generating a fluid meniscus on the surface of the vertically oriented substrate, and moving the fluid meniscus over the surface of the vertically oriented substrate to process the surface of the substrate.

Abstract: A system for applying a microtopography to a semiconductor wafer (“wafer”) is provided. The system includes a chuck configured to hold and rotate the wafer. The system also includes a grinding wheel disposed over the chuck in a proximately adjustable manner relative to the wafer to be held by the chuck. The grinding wheel is configured to rotate about a central axis of the grinding wheel, wherein the central axis of the grinding wheel is non-parallel to the central axis of the chuck. The grinding wheel is capable of contacting the wafer and removing material from the wafer at the area of contact. Appropriate application of the grinding wheel to the wafer serves to generate a microtopography across the wafer surface. The resulting microtopography can then be planarized more effectively by conventional chemical mechanical planarization methods.

Abstract: High through-put Cu CMP is achieved with reduced erosion and dishing by a multi-step polishing technique. Deposited Cu is polished with fixed abrasive polishing pads initially at a high removal rate and subsequently at a reduced removal rate and high Cu:barrier layer (Ta) selectivity. Embodiments of the present invention include reducing dishing by: controlling platen rotating speeds; increasing the concentration of active chemicals; and cleaning the polishing pads between wafers. Embodiments also include removing particulate material during CMP by increasing the flow rate of the chemical agent or controlling the static etching rate between about 100 ? and about 150 ? per minute, and recycling the chemical agent. Embodiments further include flowing an inhibitor across the wafer surface after each CMP step to reduce the static etching rate.

Abstract: A system for cleaning a semiconductor substrate is provided. The system includes transducers for generating acoustic energy oriented in a substantially perpendicular direction to a surface of a semiconductor substrate and an acoustic energy oriented in a substantially parallel direction to the surface of the semiconductor substrate. Each orientation of the acoustic energy may be simultaneously or alternately generated.

Abstract: A system for cleaning a substrate includes a tank defining an inner cavity between a base and sidewalls extending therefrom. A source of acoustic energy affixed to an outer surface of one of the sidewalls. The tank is configured to decouple a direction associated with the acoustic energy from the source of acoustic energy and direct the acoustic energy toward the substrate.

Abstract: A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. The retaining structure includes an upper portion in contact with the base, a lower portion, and a vibration damper separating the upper portion and the lower portion. The vibration damper, the vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.

Abstract: A method of forming a dynamic liquid meniscus includes forming a meniscus at a first size, the meniscus being formed between a proximity head and a first surface and changing the meniscus to a second size by modulating a flow through at least one of a set of ports on the proximity head. A system for modulating flow through the ports in a proximity head is also described.

Abstract: A polishing article for chemical mechanical polishing. The polishing article includes a generally elongated polishing sheet with a polishing surface. The polishing article is formed from a material that is substantially opaque, and has a discrete region extending substantially the length of the polishing sheet that is at least semi-transparent.

Abstract: A system and method of moving a meniscus from a first surface to a second surface includes forming a meniscus between a head and a first surface. The meniscus can be moved from the first surface to an adjacent second surface, the adjacent second surface being parallel to the first surface. The system and method of moving the meniscus can also be used to move the meniscus along an edge of a substrate.

Abstract: Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material formed thereon in a polishing apparatus having one or more rotational carrier heads and one or more rotatable platens, wherein the carrier head comprises a retaining ring and a membrane for securing a substrate and the platen has a polishing article disposed thereon, contacting the substrate surface and the polishing article to each other at a retaining ring contact pressure of about 0.4 psi or greater than a membrane pressure, and polishing the substrate to remove conductive material.

Abstract: A scrubber device is provided. The scrubber device may etch a backside of a wafer and may clean a frontside of the wafer simultaneously. The scrubber device may comprise a programmed controller adapted to supply a non-etching fluid to a frontside of the wafer whenever an etching fluid is supplied to the backside of the wafer.

Abstract: A method and composition for planarizing a substrate surface is provided. The polishing composition includes an oxidizer capable of oxidizing a metal undergoing planarization and yielding a complexing agent which complexes with the oxidized metal and a stabilizer such as a stannate salt. The composition may further include abrasive particles and/or inhibitors. The composition may be used in a multi-step polishing process including polishing a substrate surface to selectively remove a metal layer with respect to a barrier layer and dielectric layer and polishing a substrate surface using the composition to non-selectively remove the metal layer, a barrier layer, and a dielectric layer from the substrate surface.

Abstract: A method of chemical mechanical polishing a metal layer on a substrate in which the substrate is polished at a first polishing rate. Polishing is monitored with an eddy current monitoring system, and the polishing rate is reduced to a second polishing rate when the eddy current monitoring system indicates that a predetermined thickness of the metal layer remains on the substrate. Then polishing is monitored with an optical monitoring system, and polishing is halted when the optical monitoring system indicates that an underlying layer is at least partially exposed.

Abstract: A substrate is chemical mechanical polished with a high-selectivity slurry until the stop layer is at least partially exposed, and then the substrate is polished with a low-selectivity slurry until the stop layer is completely exposed.

Abstract: A planarized conductive material is formed over a substrate including narrow and wide features. The conductive material is formed through a succession of deposition processes. A first deposition process forms a first layer of the conductive material that fills the narrow features and at least partially fills the wide features. A second deposition process forms a second layer of the conductive material within cavities in the first layer. A flexible material can reduce a thickness of the first layer above the substrate while delivering a solution to the cavities to form the second layer therein. The flexible material can be a porous membrane attached to a pressurizable reservoir filled with the solution. The flexible material can also be a poromeric material wetted with the solution.

Abstract: A method for performing chemical-mechanical polishing/planarization providing highly selective, rapid removal of a Ta-containing barrier layer from a workpiece surface, such as a semiconductor wafer including a damascene-type Cu-based metallization pattern in-laid in a dielectric layer and including a Ta-containing metal diffusion barrier layer, comprises applying an aqueous liquid composition to the workpiece surface during CMP or to the polishing pad utilized for performing the CMP, the composition comprising at least one reducing agent for reducing transition metal ions to a lower valence state, at least one pH adjusting agent, at least one metal corrosion inhibitor, and water, and optionally includes ions of at least one transition metal, e.g., Cu and Fe ions. According to another embodiment, the aqueous liquid composition contains Ag ions and the at least one reducing agent is omitted.

Abstract: Method and apparatus for improving the reproducibility of chucking forces of an electrostatic chuck used in plasma enhanced CVD processing of substrates provides for precoating of the electrostatic chuck with a dielectric layer, such as SiO2, after every chamber cleaning process. The uniform and tightly bonded dielectric layer deposited on the electrostatic chuck eliminates the need for a cover wafer over the chuck surface during the chamber cleaning and provides for more reliable gripping of wafers.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a flexible membrane that applies a load to a substrate and a retaining ring. The friction coefficient of the lower surface of the flexible membrane is increased to prevent contact between the substrate and the retaining ring, thereby preventing slurry compaction and buildup and substrate deformation caused by such contact.