Abstract: A method and apparatus for conditioning a polishing pad used in a substrate polishing process. In one embodiment, a method for conditioning a polishing pad utilized to polish a substrate is provided. The method includes providing relative motion between an optical device and a polishing pad having a polishing medium disposed thereon, and scanning a processing surface of the polishing pad with a laser beam to condition the processing surface, wherein the laser beam has a wavelength that is substantially transparent to the polishing medium, but is reactive with the material of the polishing pad.

Abstract: A wafer preparation method is provided for producing a wet region and then a corresponding dry region on the wafer. Brushing produces the wet region on the wafer. As the brushing moves in a selected scan operation across the wafer, a generating operation forms a meniscus that follows the brushing and dries the wet region. The generating operation produces the meniscus at least partially surrounding the wet region scrubbed by the scrubbing. The controlled meniscus is formed by applying fluid to the surface of the wafer and simultaneously removing the fluid. The scan operations may be selected so the brushing scrubs the wet region and then the meniscus forms the dry region where the scrubbing took place. The scan operations include a radial scan, a linear scan, a spiral scan and a raster scan.

Abstract: A modular semiconductor substrate cleaning system is provided that processes vertically oriented semiconductor substrates. The system features a plurality of cleaning modules that may include a megasonic tank-type cleaner followed by a scrubber. An input module may receive a horizontally oriented substrate and rotate the substrate to a vertical orientation, and an output module may receive a vertically oriented substrate and rotate the substrate to a horizontal orientation. Each of the modules (input, cleaning and output) has a substrate support and may be positioned such that the substrate supports of adjacent modules are equally spaced. The modules are coupled by an overhead transfer mechanism having a plurality of substrate handlers spaced the same distance (X) as the substrate supports of the modules therebelow.

Abstract: A method for cleaning a substrate is provided. The method initiates with disposing a fluid layer having solid components therein to a surface of the substrate. A shear force directed substantially parallel to the surface of the substrate and toward an outer edge of the substrate is then created. The shear force may result from a normal or tangential component of a force applied to a solid body in contact with the fluid layer in one embodiment. The surface of the substrate is rinsed to remove the fluid layer. A cleaning system and apparatus are also provided.

Abstract: A method for cleaning a substrate is provided. The method initiates with applying an activation solution to a surface of the substrate. The activation solution and the surface of the substrate are contacted with a surface of a solid cleaning surface. The activation solution is absorbed into a portion of the solid cleaning element and then the substrate or the solid cleaning surface is moved relative to each other to clean the surface of the substrate. A method for cleaning the surface of the substrate with a solid cleaning element that experiences plastic deformation is also provided. Corresponding cleaning apparatuses are also provided.

Abstract: A cleaning material is disposed over a substrate. The cleaning material includes solid components dispersed within a liquid medium. A force is applied to the solid components within the liquid medium to bring the solid components within proximity to contaminants present on the substrate. The force applied to the solid components can be exerted by an immiscible component within the liquid medium. When the solid components are brought within sufficient proximity to the contaminants, an interaction is established between the solid components and the contaminants. Then, the solid components are moved away from the substrate such that the contaminants having interacted with the solid components are removed from the substrate.

Abstract: A system and method of moving a meniscus from a first surface to a second surface includes forming a meniscus between a head and a first surface. The meniscus can be moved from the first surface to an adjacent second surface, the adjacent second surface being parallel to the first surface. The system and method of moving the meniscus can also be used to move the meniscus along an edge of a substrate.

Abstract: A method for cleaning a substrate is provided. In this method, a flow of non-Newtonian fluid is provided where at least a portion of the flow exhibits plug flow. To remove particles from a surface of the substrate, the surface of the substrate is placed in contact with the portion of the flow that exhibits plug flow such that the portion of the flow exhibiting plug flow moves over the surface of the substrate. Additional methods and apparatuses for cleaning a substrate also are described.

Abstract: A method for transporting a substrate is provided. In this method, a non-Newtonian fluid is provided and the substrate is suspended in the non-Newtonian fluid. The non-Newtonian fluid is capable of supporting the substrate. Thereafter, a supply force is applied on the non-Newtonian fluid to cause the non-Newtonian fluid to flow, whereby the flow is capable of moving the substrate along a direction of the flow. Apparatuses and systems for transporting the substrate using the non-Newtonian fluid also are described.

Abstract: An electroplating apparatus for depositing a metallic layer on a surface of a wafer is provided. In one example, a proximity head capable of being electrically charged as an anode is placed in close proximity to the surface of the wafer. A plating fluid is provided between the wafer and the proximity head to create localized metallic plating.

Abstract: A substrate preparation apparatus is provided. The apparatus includes a housing configured to be installed in a substrate fabrication facility. The housing includes a manifold for use in preparing a wafer surface. The manifold is configured to include a first process window in a first portion of the manifold. A first fluid meniscus is capable of being defined within the first process window. Further included is a second process window in a second portion of the manifold. A second fluid meniscus is capable of being defined within the second process window. An arm is integrated with the housing, and the arm is coupled to the manifold, such that the arm is capable of positioning the manifold in proximity with the substrate during operation. The apparatus therefore provides for the formation of multi-menisci over the surface of a substrate using a single manifold.

Abstract: A modular semiconductor substrate cleaning system is provided that processes vertically oriented semiconductor substrates. The system features a plurality of cleaning modules that may include a megasonic tank-type cleaner followed by a scrubber. An input module may receive a horizontally oriented substrate and rotate the substrate to a vertical orientation, and an output module may receive a vertically oriented substrate and rotate the substrate to a horizontal orientation. Each of the modules (input, cleaning and output) has a substrate support and may be positioned such that the substrate supports of adjacent modules are equally spaced. The modules are coupled by an overhead transfer mechanism having a plurality of substrate handlers spaced the same distance (X) as the substrate supports of the modules therebelow.

Abstract: A system and method of moving a meniscus from a first surface to a second surface includes forming a meniscus between a head and a first surface. The meniscus can be moved from the first surface to an adjacent second surface, the adjacent second surface being parallel to the first surface. The system and method of moving the meniscus can also be used to move the meniscus along an edge of a substrate.

Abstract: A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. The retaining structure includes an upper portion in contact with the base, a lower portion, and a vibration damper separating the upper portion and the lower portion. The vibration damper, the vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.

Abstract: A system for inspecting a substrate includes a camera and a light source. The camera is oriented toward a field of view. The field of view encompasses at least a first portion of a first surface of the substrate. The light source is oriented toward the field of view at a first angle ? relative to the first surface of the substrate. A method for inspecting a substrate is also included.

Abstract: A method is provided for removing contamination from a substrate. The method includes applying a cleaning solution having a dispersed phase, a continuous phase and particles dispersed within the continuous phase to a surface of the substrate. The method includes forcing one of the particles dispersed within the continuous phase proximate to one of the surface contaminants. The forcing is sufficient to overcome any repulsive forces between the particles and the surface contaminants so that the one of the particles and the one of the surface contaminants are engaged. The method also includes removing the engaged particle and surface contaminant from the surface of the substrate. A process to manufacture the cleaning material is also provided.

Abstract: A cleaning compound is provided. The cleaning compound includes about 0.1 weight percent to about 10 weight percent of a fatty acid dispersed in water. The cleaning compound includes an amount of a base sufficient to bring a pH of the fatty acid water solution to about a level where above about 50% of the dispersed fatty acid is ionized. A method for cleaning a substrate, a system for cleaning a substrate, and a cleaning solution prepared by a process are also provided.

Abstract: A substrate processing system includes a first, movable surface tension gradient device, a dicing device and a system controller. The first, movable surface tension gradient device is capable of supporting a first process within a first meniscus. The first meniscus being supported between the first surface tension gradient device and a first surface of the substrate. The first movable surface tension gradient device capable of being moved relative to the first surface of the substrate. The dicing device is oriented to a desired dicing location. The desired dicing location being encompassed by the meniscus. The system controller is coupled to the dicing device and the surface tension gradient device. The system controller includes a process recipe. A method for dicing a substrate is also described.

Abstract: A method of forming a dynamic liquid meniscus includes forming a meniscus at a first size, the meniscus being formed between a proximity head and a first surface and changing the meniscus to a second size by modulating a flow through at least one of a set of ports on the proximity head. A system for modulating flow through the ports in a proximity head is also described.

Abstract: A system for applying a microtopography to a semiconductor wafer (“wafer”) is provided. The system includes a chuck configured to hold and rotate the wafer. The system also includes a grinding wheel disposed over the chuck in a proximately adjustable manner relative to the wafer to be held by the chuck. The grinding wheel is configured to rotate about a central axis of the grinding wheel, wherein the central axis of the grinding wheel is non-parallel to the central axis of the chuck. The grinding wheel is capable of contacting the wafer and removing material from the wafer at the area of contact. Appropriate application of the grinding wheel to the wafer serves to generate a microtopography across the wafer surface. The resulting microtopography can then be planarized more effectively by conventional chemical mechanical planarization methods.