Patents by Inventor Frederic-Xavier Gaillard
Frederic-Xavier Gaillard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8202496Abstract: A molecule is separated from a liquid sample containing said molecule and at least one additional molecule having a larger hydrodynamic diameter than the hydrodynamic diameter of the molecule to be separated, by means of a separation device comprising a substrate, at least one circulation channel arranged in said substrate, and at least one nanotube associated with said molecule to be separated and formed on a free surface of the substrate. Separation is achieved by means of the internal channel of a nanotube, such as a carbon nanotube, presenting an effective diameter chosen in predetermined and controlled manner. The effective diameter of the internal channel is chosen such as to be larger than the hydrodynamic diameter of the molecule to be separated and smaller than the hydrodynamic diameter of the additional molecules of larger hydrodynamic diameters.Type: GrantFiled: February 23, 2009Date of Patent: June 19, 2012Assignee: Commissariat a l'Energie AtomiqueInventors: Jean-Christophe Coiffic, Frédéric-Xavier Gaillard, Pierre Puget
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Publication number: 20120115311Abstract: The method for forming a multilayer structure on a substrate comprises providing a stack successively comprising an electron hole blocking layer, a first layer made from N-doped semiconductor material having a dopant concentration greater than or equal to 1018 atoms/cm3or P-doped semiconductor material, and a second layer made from semiconductor material of different nature. A lateral electric contact pad is made between the first layer and the substrate, and the material of the first layer is subjected to anodic treatment in an electrolyte.Type: ApplicationFiled: November 10, 2011Publication date: May 10, 2012Applicants: STMICROELECTRONICS (CROLLES 2) SAS, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Sébastien DESPLOBAIN, Frederic-Xavier GAILLARD, Yves MORAND, Fabrice NEMOUCHI
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Publication number: 20110244601Abstract: A method for producing a substrate including a step of thinning the thickness of the substrate is disclosed. The method is characterized in that it includes the following steps: the formation of a porous zone in an inner layer of the substrate; the progressive thinning of the thickness of the substrate towards the inner layer including a porous zone; the completion of the progressive thinning by polishing; and a controlled stoppage of polishing upon detection of the porous zone.Type: ApplicationFiled: March 10, 2011Publication date: October 6, 2011Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE. ALT.Inventors: Frederic-Xavier GAILLARD, Fabrice NEMOUCHI
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Publication number: 20110221015Abstract: A production method with release of movable mechanical parts of an electro-mechanical microsystem is disclosed. The method is characterized in that porous zones are formed on the front face of a first water of a semiconductor material. Patterns of a material able to constitute the movable mechanical parts of the electro-mechanical microsystem are then formed on the front face of the first water at the level of the porous zones and encapsulated in a sacrificial layer. Then a layer of a material withstanding an attack by a solvent of the sacrificial layer is deposited. The release of the movable mechanical parts is then executed by the rear face of the first water, through the porous zones, using a solvent of the sacrificial layer.Type: ApplicationFiled: March 10, 2011Publication date: September 15, 2011Applicant: COMMISS. A L'ENERGIE ATOM. ET AUX ENERG. ALTERNAInventors: Frederic-Xavier Gaillard, Fabrice Nemouchi
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Patent number: 8017025Abstract: A target layer comprising at least one degradable material is deposited on a support. Nanotubes are then formed on the degradable material of the target layer before deposition of an insulating layer is performed. Degradation of the degradable material and elimination of degradation sub-products are then performed by means of the nanotubes passing through the insulating layer thus forming air gaps in the target layer.Type: GrantFiled: May 9, 2008Date of Patent: September 13, 2011Assignee: Commissariat a l'Energie AtomiqueInventors: Frederic-Xavier Gaillard, Jean-Christophe Coiffic
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Patent number: 8011091Abstract: A target layer with holes is formed on a bottom conducting layer. Nanotubes are formed in the holes from the bottom conducting layer. A flat insulating layer is then deposited on the target layer, the nanotubes passing through the insulating layer. Air gaps are then formed by selective decomposition of the target layer. The decomposition agent and/or decomposition by-products use the walls and the central holes of the nanotubes to pass between the target layer and the outside. After decomposition, the top conducting layer is formed on the insulating layer. The nanotubes then electrically connect the conducting layers.Type: GrantFiled: July 8, 2008Date of Patent: September 6, 2011Assignee: Commissariat à l'Energie AtomiqueInventors: Frederic-Xavier Gaillard, Jean-Christophe Coiffic
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Patent number: 7960275Abstract: A method for manufacturing a structure of electrical interconnections for an integrated circuit having levels of interconnections, the method having steps of depositing a layer of sacrificial material on the substrate, etching the layer of sacrificial material with a pattern corresponding to electrical conductors, depositing, on the etched layer of the layer of sacrificial material, a layer of permeable membrane allowing an attack agent to break down the sacrificial material, breaking down the sacrificial material by using the attack agent to form air gaps to replace the broken down sacrificial material, forming electrical conductors in the etched track so as to obtain electrical interconnections separated by air gaps, and depositing a layer of insulating material to cover the electrical interconnections.Type: GrantFiled: March 11, 2008Date of Patent: June 14, 2011Assignee: Commissariat a l'Energie AtomiqueInventor: Frédéric-Xavier Gaillard
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Publication number: 20110086165Abstract: A porous silicon zone is metallized by performing in situ reduction of metallic ions dissolved in an aqueous solution and fixing of the metallic particles obtained on said zone in a single step. This step consists in particular in bringing the solution containing the metallic ions into contact with the zone to be metallized, the surface whereof has previously been functionalized to enable in situ reduction of the metallic ions and fixing of the metallic particles. Functionalization of the porous silicon zone is achieved by grafting two particular and distinct types of chemical functions. The first function used is a chelating chemical function for the metallic ions and/or for the metal corresponding to the metallic ions, whereas the second function is a reducing chemical function for the metallic ions. Such a metallization can be used for producing an electrically conducting porous diffusion layer of a fuel cell.Type: ApplicationFiled: September 29, 2010Publication date: April 14, 2011Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Frédéric-Xavier GAILLARD, Olivier RACCURT
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Patent number: 7846512Abstract: A method for producing patterns in a polymer layer. Polymer sites are formed on a support. These sites are subjected to a plasma deposition of dielectric material and preferably react with this plasma so as to form openings at the level of said sites. A pattern structure is then formed in the dielectric material and/or in the polymer.Type: GrantFiled: April 30, 2008Date of Patent: December 7, 2010Assignee: Commissariat a l'Energie AtomiqueInventors: Frédéric-Xavier Gaillard, Laurent Vandroux
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Publication number: 20090218226Abstract: Separation device of molecules and production method thereof. A molecule is separated from a liquid sample containing said molecule and at least one additional molecule having a larger hydrodynamic diameter than the hydrodynamic diameter of the molecule to be separated, by means of a separation device comprising a substrate, at least one circulation channel arranged in said substrate, and at least one nanotube associated with said molecule to be separated and formed on a free surface of the substrate. Separation is achieved by means of the internal channel of a nanotube, such as a carbon nanotube, presenting an effective diameter chosen in predetermined and controlled manner. The effective diameter of the internal channel is chosen such as to be larger than the hydrodynamic diameter of the molecule to be separated and smaller than the hydrodynamic diameter of the additional molecules of larger hydrodynamic diameters.Type: ApplicationFiled: February 23, 2009Publication date: September 3, 2009Applicant: Commissariat A L'Energie AtomiqueInventors: Jean-Christophe Coiffic, Frederic-Xavier Gaillard, Pierre Puget
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Publication number: 20090019690Abstract: A target layer with holes is formed on a bottom conducting layer. Nanotubes are formed in the holes from the bottom conducting layer. A flat insulating layer is then deposited on the target layer, the nanotubes passing through the insulating layer. Air gaps are then formed by selective decomposition of the target layer. The decomposition agent and/or decomposition by-products use the walls and the central holes of the nanotubes to pass between the target layer and the outside. After decomposition, the top conducting layer is formed on the insulating layer. The nanotubes then electrically connect the conducting layers.Type: ApplicationFiled: July 8, 2008Publication date: January 22, 2009Applicant: Commissariat A L'Energie AtomiqueInventors: Frederic-Xavier Gaillard, Jean-Christophe Coiffic
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Publication number: 20080283497Abstract: A target layer comprising at least one degradable material is deposited on a support. Nanotubes are then formed on the degradable material of the target layer before deposition of an insulating layer is performed. Degradation of the degradable material and elimination of degradation sub-products are then performed by means of the nanotubes passing through the insulating layer thus forming air gaps in the target layer.Type: ApplicationFiled: May 9, 2008Publication date: November 20, 2008Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUEInventors: Frederic-Xavier Gaillard, Jean-Christophe Coiffic
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Publication number: 20080274301Abstract: Polymer sites are formed on a support. These sites are subjected to a plasma deposition of dielectric material and preferably react with this plasma so as to form openings at the level of said sites. A pattern structure is then formed in the dielectric material and/or in the polymer.Type: ApplicationFiled: April 30, 2008Publication date: November 6, 2008Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUEInventors: Frederic-Xavier Gaillard, Laurent Vandroux
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Publication number: 20080227286Abstract: The invention relates to a method for manufacturing a structure of electrical interconnections of the damascene type for an integrated circuit, comprising at least one level of interconnections, consisting of electrical conductors arranged on a substrate and separated from one another by air gaps, a layer of electrically isolating material covering the level of interconnections, the method comprising steps consisting of: depositing a layer of sacrificial material on the substrate, etching the layer of sacrificial material with a pattern corresponding to the electrical conductors, depositing, on the etched layer of the layer of sacrificial material, a layer of membrane in material permeable to an attack agent capable of breaking down the sacrificial material, breaking down the sacrificial material by means of the attack agent, which is how the air gaps are formed in place of the broken down sacrificial material, forming electrical conductors in the etched track so as to obtain electrical conductors separateType: ApplicationFiled: March 11, 2008Publication date: September 18, 2008Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUEInventor: Frederic-Xavier GAILLARD