Abstract: A method of collecting particles from a gas-particle stream having a first temperature and a plurality of particles, the method comprising: cooling an interior surface of a collection chamber to a second temperature less than the first temperature of the gas-particle stream; flowing the gas-particle stream through the chamber, wherein the gas-particle stream is directed along the cooled interior surface of the collection chamber, and a temperature gradient between the gas-particle stream and the cooled interior surface creates a thermophoretic force; and the thermophoretic force attracting the particles from the gas-particle stream to the interior surface of the collection chamber, wherein the particles are deposited onto the interior surface of the collection chamber.

Abstract: A constricting chamber having first and second ends, the chamber comprising: an interior surface formed between the first and second ends, disposed circumferentially around and defining an interior space and a longitudinal axis of the chamber; a frusto-conical surface disposed between the first and second ends and narrowing as it extends away from the first end and into the second end; an ejection port disposed at the second end and substantially aligned with the longitudinal axis; a cover disposed at the first end, substantially perpendicular to the longitudinal axis, and comprising a center substantially aligned with the longitudinal axis; an injection port disposed on the cover proximate the center, and configured to receive a reactive mixture into the chamber; and an annular supply portion disposed circumferentially around the longitudinal axis and comprising supply port(s) configured to supply conditioning fluid into the chamber in an annular formation along the interior surface.

Abstract: A heat exchanger comprising: a gas transport conduit providing a channel through which a fluid mixture can flow; an outer conduit disposed around the gas transport conduit, the outer conduit having a first cap covering a first end and a second cap covering a second end, the gas transport conduit passing through the outer conduit; and a conductive tube passing through the outer conduit, providing a channel through which a circulating fluid can flow through the outer conduit, wherein a static fluid chamber is formed between the conductive tube and the gas transport conduit, the static fluid chamber configured to house a static fluid, wherein the gas transport conduit is configured to conduct heat from the fluid mixture in the gas transport conduit to the static fluid and the conductive tube is configured to conduct heat from the static fluid to the circulating fluid.

Abstract: An apparatus for cooling a reactive mixture, comprising: a reactor configured to form the reactive mixture; a quench chamber comprising a frusto-conical body having a wide end, a narrow end, and a quench region formed between the wide and narrow end, wherein the quench chamber is configured to receive the reactive mixture from the plasma reactor through a reactive mixture inlet into the quench region, to receive a conditioning fluid through at least one fluid inlet, and to flow the conditioning fluid into the quench region, wherein the frusto-conical body is configured to produce a turbulent flow within the quench region with the flow of the conditioning fluid into the quench region, thereby promoting the quenching of the reactive mixture to form a cooled gas-particle mixture; and a suction generator configured to force the cooled gas-particle mixture out of the quench chamber.

Abstract: A system comprising: a plasma production chamber configured to produce a plasma; a reaction chamber vaporize a precursor material with the plasma to form a reactive mixture; a quench chamber having a frusto-conical surface and a quench region formed within the quench chamber between an ejection port of the reaction chamber and a cooled mixture outlet, wherein the quench region configured to receive the reactive mixture from the ejection port, to cool the reactive mixture to form a cooled mixture, and to supply the cooled mixture to the cooled mixture outlet; and a conditioning fluid injection ring disposed at the ejection port and configured to flow a conditioning fluid directly into the reactive mixture as the reactive mixture flows through the ejection port, thereby disturbing the flow of the reactive mixture, creating turbulence within the quench region and cooling the reactive mixture to form a cooled mixture comprising condensed nanoparticles.

Abstract: A method of collecting particles from a gas-particle stream having a first temperature and a plurality of particles, the method comprising: cooling an interior surface of a collection chamber to a second temperature less than the first temperature of the gas-particle stream; flowing the gas-particle stream through the chamber, wherein the gas-particle stream is directed along the cooled interior surface of the collection chamber, and a temperature gradient between the gas-particle stream and the cooled interior surface creates a thermophoretic force; and the thermophoretic force attracting the particles from the gas-particle stream to the interior surface of the collection chamber, wherein the particles are deposited onto the interior surface of the collection chamber.

Abstract: A high pressure chamber for processing of a semiconductor substrate comprises a high pressure processing cavity, a plurality of injection nozzles, and first and second outlet ports. The high pressure processing cavity holds the semiconductor substrate during high pressure processing. The plurality of injection nozzles are oriented into the high pressure processing cavity at a vortex angle and are operable to produce a vortex over a surface of the semiconductor substrate. The first and second outlet ports are located proximate to a center of the plurality of injection nozzles and are operable in a first time segment to provide an operating outlet out of the first outlet port and operable in a second time segment to provide the operating outlet out of the second outlet port. In an alternative embodiment, an upper surface of the high pressure processing cavity comprises a height variation. The height variation produces more uniform molecular speeds for a process fluid flowing over the semiconductor substrate.

Abstract: A valve for a wafer processing machine is formed with a wedge-shaped sliding gate. A folded wafer handling arm is stored within the wedge and pumped to keep the arm clean while the valve is closed.

Abstract: In order to compensate for worn or distorted wafer cassettes and missing wafers, the cassette of wafers is scanned through a beam. The timing of the interruptions of the beam is used to inventory the wafers present and measure the exact position of each wafer relative to the base of the cassette.

Abstract: A wafer processing system including wafer handling arms incorporated into vacuum isolation valves is described. A loadlock with elevator and optical sensors is used to inventory and position a cassette of wafers. The wafers in the cassette can be randomly accessed. A computer is used to control the system according to a task status table independent of time sequence.