Patents by Inventor Frederick Schmid

Frederick Schmid has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11661671
    Abstract: A method of producing a crystalline material is provided that may include providing a crystal growth apparatus comprising a chamber, a hot zone, and a muffle. The hot zone may be disposed within the chamber and include at least one heating system, at least one heat removal system, and a crucible containing feedstock. Additionally, the method may include providing a muffle that surrounds at least two sides of the crucible to ensure uniform temperature distribution through the feedstock during crystal growth to allow the crystalline material to be grown with a square or rectangular shaped cross section.
    Type: Grant
    Filed: April 27, 2020
    Date of Patent: May 30, 2023
    Assignee: CRYSTAL SYSTEMS, LLC
    Inventors: Frederick Schmid, Cody Riopel, Hui Zhang
  • Publication number: 20200255969
    Abstract: A method of producing a crystalline material is provided that may include providing a crystal growth apparatus comprising a chamber, a hot zone, and a muffle. The hot zone may be disposed within the chamber and include at least one heating system, at least one heat removal system, and a crucible containing feedstock. Additionally, the method may include providing a muffle that surrounds at least two sides of the crucible to ensure uniform temperature distribution through the feedstock during crystal growth to allow the crystalline material to be grown with a square or rectangular shaped cross section.
    Type: Application
    Filed: April 27, 2020
    Publication date: August 13, 2020
    Inventors: Frederick Schmid, Cody Riopel, Hui Zhang
  • Patent number: 10633759
    Abstract: A sapphire crystal growth apparatus is provided that includes a chamber, a hot zone and a muffle. More specifically, the hot zone is disposed within the chamber and includes at least one heating system, at least one heat removal system, and a crucible containing feedstock. Additionally, a muffle that surrounds at least two sides of the crucible is also provided to ensure uniform temperature distribution through the feedstock during crystal growth to allow the crystalline material to be grown with a square or rectangular shaped cross section.
    Type: Grant
    Filed: September 17, 2014
    Date of Patent: April 28, 2020
    Assignee: GTAT Corporation
    Inventors: Frederick Schmid, Cody Riopel, Hui Zhang
  • Publication number: 20170096746
    Abstract: A method for minimizing unwanted ancillary reactions in a vacuum furnace used to process a material, such as growing a crystal. The process is conducted in a furnace chamber environment in which helium is admitted to the furnace chamber at a flow rate to flush out impurities and at a predetermined pressure to achieve thermal stability in a heat zone, to minimize heat flow variations and to minimize temperature gradients in the heat zone. During cooldown helium pressure is used to reduce thermal gradients in order to increase cooldown rates.
    Type: Application
    Filed: December 19, 2016
    Publication date: April 6, 2017
    Inventors: Frederick Schmid, David B. Joyce, John Brouillette, Daniel P. Betty, Ryan Philpott
  • Patent number: 9546434
    Abstract: A method for minimizing unwanted ancillary reactions in a vacuum furnace used to process a material, such as growing a crystal. The process is conducted in a furnace chamber environment in which helium is admitted to the furnace chamber at a flow rate to flush out impurities and at a predetermined pressure to achieve thermal stability in a heat zone, to minimize heat flow variations and to minimize temperature gradients in the heat zone. During cooldown helium pressure is used to reduce thermal gradients in order to increase cooldown rates.
    Type: Grant
    Filed: September 1, 2010
    Date of Patent: January 17, 2017
    Assignee: GTAT Corporation
    Inventors: Frederick Schmid, David B. Joyce, John Brouillette, Daniel P. Betty, Ryan Philpott
  • Publication number: 20150090179
    Abstract: A sapphire crystal growth apparatus is provided that includes a chamber, a hot zone and a muffle. More specifically, the hot zone is disposed within the chamber and includes at least one heating system, at least one heat removal system, and a crucible containing feedstock. Additionally, a muffle that surrounds at least two sides of the crucible is also provided to ensure uniform temperature distribution through the feedstock during crystal growth to allow the crystalline material to be grown with a square or rectangular shaped cross section.
    Type: Application
    Filed: September 17, 2014
    Publication date: April 2, 2015
    Inventors: Frederick Schmid, Cody Riopel, Hui Zhang
  • Patent number: 8329133
    Abstract: A method and apparatus for refining metallurgical silicon to produce solar grade silicon for use in photovoltaic cells. A crucible in a vacuum furnace receives a mixture of metallurgical silicon and a reducing agent such as calcium disilicide. The mix is melted in non-oxidizing conditions within the furnace under an argon partial pressure. After melting, the argon partial pressure is decreased to produce boiling and the process ends with directional solidification. The process reduces impurities, such as phosphorus, to a level compatible with solar-grade silicon and reduces other impurities significantly.
    Type: Grant
    Filed: October 28, 2009
    Date of Patent: December 11, 2012
    Assignee: GT Crystal Systems, LLC
    Inventors: Frederick Schmid, David B Joyce
  • Patent number: 8177910
    Abstract: To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled speed as the crystal grows. Other steps could include moving the crucible, but this process can avoid having to move the crucible. A temperature gradient is produced by shielding only a portion of the heating element; for example, the bottom portion of a cylindrical element can be shielded to cause heat transfer to be less in the bottom of the crucible than at the top, thereby causing a stabilizing temperature gradient in the crucible.
    Type: Grant
    Filed: March 1, 2011
    Date of Patent: May 15, 2012
    Assignee: GT Crystal Systems, LLC
    Inventors: Frederick Schmid, Chandra P. Khattak, David B. Joyce
  • Publication number: 20110217225
    Abstract: A method and apparatus for refining metallurgical silicon to produce solar grade silicon for use in photovoltaic cells. A crucible in a vacuum furnace receives a mixture of metallurgical silicon and a reducing agent such as calcium disilicide. The mix is melted in non-oxidizing conditions within the furnace under an argon partial pressure. After melting, the argon partial pressure is decreased to produce boiling and the process ends with directional solidification. The process reduces impurities, such as phosphorus, to a level compatible with solar-grade silicon and reduces other impurities significantly.
    Type: Application
    Filed: October 28, 2009
    Publication date: September 8, 2011
    Applicant: Crystal System, Inc.
    Inventors: Frederick Schmid, David B. Joyce
  • Publication number: 20110146566
    Abstract: To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled speed as the crystal grows. Other steps could include moving the crucible, but this process can avoid having to move the crucible. A temperature gradient is produced by shielding only a portion of the heating element; for example, the bottom portion of a cylindrical element can be shielded to cause heat transfer to be less in the bottom of the crucible than at the top, thereby causing a stabilizing temperature gradient in the crucible.
    Type: Application
    Filed: March 1, 2011
    Publication date: June 23, 2011
    Applicant: GT CRYSTAL SYSTEMS, LLC
    Inventors: Frederick SCHMID, Chandra P. KHATTAK, David B. JOYCE
  • Patent number: 7918936
    Abstract: To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled speed as the crystal grows. Other steps could include moving the crucible, but this process can avoid having to move the crucible. A temperature gradient is produced by shielding only a portion of the heating element; for example, the bottom portion of a cylindrical element can be shielded to cause heat transfer to be less in the bottom of the crucible than at the top, thereby causing a stabilizing temperature gradient in the crucible.
    Type: Grant
    Filed: October 19, 2007
    Date of Patent: April 5, 2011
    Assignee: GT Crystal Systems, LLC
    Inventors: Frederick Schmid, Chandra P. Khattak, David B. Joyce
  • Publication number: 20110048316
    Abstract: A method for minimizing unwanted ancillary reactions in a vacuum furnace used to process a material, such as growing a crystal. The process is conducted in a furnace chamber environment in which helium is admitted to the furnace chamber at a flow rate to flush out impurities and at a predetermined pressure to achieve thermal stability in a heat zone, to minimize heat flow variations and to minimize temperature gradients in the heat zone. During cooldown helium pressure is used to reduce thermal gradients in order to increase cooldown rates.
    Type: Application
    Filed: September 1, 2010
    Publication date: March 3, 2011
    Applicant: GT CRYSTAL SYSTEMS, LLC
    Inventors: Frederick Schmid, David B. Joyce, John Brouillette, Daniel P. Betty, Ryan Philpott
  • Patent number: 7344596
    Abstract: To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled speed as the crystal grows. Other steps could include moving the crucible, but this process can avoid having to move the crucible. A temperature gradient is produced by shielding only a portion of the heating element; for example, the bottom portion of a cylindrical element can be shielded to cause heat transfer to be less in the bottom of the crucible than at the top, thereby causing a stabilizing temperature gradient in the crucible.
    Type: Grant
    Filed: August 25, 2005
    Date of Patent: March 18, 2008
    Assignee: Crystal Systems, Inc.
    Inventors: Frederick Schmid, Chandra P. Khattak, David B. Joyce
  • Publication number: 20080035051
    Abstract: To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled speed as the crystal grows. Other steps could include moving the crucible, but this process can avoid having to move the crucible. A temperature gradient is produced by shielding only a portion of the heating element; for example, the bottom portion of a cylindrical element can be shielded to cause heat transfer to be less in the bottom of the crucible than at the top, thereby causing a stabilizing temperature gradient in the crucible.
    Type: Application
    Filed: October 19, 2007
    Publication date: February 14, 2008
    Applicant: CRYSTAL SYSTEMS, INC.
    Inventors: Frederick SCHMID, Chandra KHATTAK, David JOYCE
  • Publication number: 20070044707
    Abstract: To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled speed as the crystal grows. Other steps could include moving the crucible, but this process can avoid having to move the crucible. A temperature gradient is produced by shielding only a portion of the heating element; for example, the bottom portion of a cylindrical element can be shielded to cause heat transfer to be less in the bottom of the crucible than at the top, thereby causing a stabilizing temperature gradient in the crucible.
    Type: Application
    Filed: August 25, 2005
    Publication date: March 1, 2007
    Inventors: Frederick Schmid, Chandra Khattak, David Joyce
  • Publication number: 20040211496
    Abstract: A silicon nitride crucible is coated with a crucible release coating for use in directional solidification of multicrystalline silicon ingots. The crucible preferably includes reaction bonded silicon nitride crucible. After removing the silicon ingot, the release coating is easily removed and the crucible can be repeatedly recoated and reused.
    Type: Application
    Filed: April 25, 2003
    Publication date: October 28, 2004
    Applicant: Crystal Systems, Inc.
    Inventors: Chandra P. Khattak, Frederick Schmid
  • Publication number: 20020096165
    Abstract: A cutting machine has a blade mounted for reciprocating movement. A workpiece is rotated while the blade is reciprocated, and then the workpiece is rotated through smaller angles to complete the cut. A holder is attached to partially cut slices of the workpiece.
    Type: Application
    Filed: January 24, 2001
    Publication date: July 25, 2002
    Inventors: Frederick Schmid, Maynard B. Smith, Chandra P. Khattak
  • Patent number: 6418921
    Abstract: A cutting machine has a blade mounted for reciprocating movement. A workpiece is rotated while the blade is reciprocated, and then the workpiece is rotated through smaller angles to complete the cut. A holder is attached to partially cut slices of the workpiece.
    Type: Grant
    Filed: January 24, 2001
    Date of Patent: July 16, 2002
    Assignee: Crystal Systems, Inc.
    Inventors: Frederick Schmid, Maynard B. Smith, Chandra P. Khattak
  • Patent number: 6368403
    Abstract: An apparatus for purifying metallurgical grade silicon to produce solar grade silicon has a container for holding molten silicon and one or more torches for providing oxygen and hydrogen gas to heat the molten silicon so that the reaction time is prolonged, to create turbulence, and to introduce silica powder and water vapor for reactions with molten silicon. The molten silicon is then directionally solidified.
    Type: Grant
    Filed: February 25, 2000
    Date of Patent: April 9, 2002
    Assignee: Crystal Systems, Inc.
    Inventors: Frederick Schmid, Chandra P. Khattak, David B. Joyce
  • Patent number: 5972107
    Abstract: An apparatus for purifying metallurgical grade silicon to produce solar grade silicon has a container for holding molten silicon and one or more submergible torches for providing a flame surrounded by inert gas to heat the molten silicon so that the reaction time is prolonged, to create turbulence, and to introduce silica powder and water vapor for reactions with molten silicon. The molten silicon is then directionally solidified by providing the container in a coolant tank and controlling the coolant level with controllable valves so that further purification is achieved by segregating impurities.
    Type: Grant
    Filed: August 28, 1997
    Date of Patent: October 26, 1999
    Assignee: Crystal Systems, Inc.
    Inventors: Frederick Schmid, Chandra P. Khattak