Patents by Inventor Frederick Schmid
Frederick Schmid has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11661671Abstract: A method of producing a crystalline material is provided that may include providing a crystal growth apparatus comprising a chamber, a hot zone, and a muffle. The hot zone may be disposed within the chamber and include at least one heating system, at least one heat removal system, and a crucible containing feedstock. Additionally, the method may include providing a muffle that surrounds at least two sides of the crucible to ensure uniform temperature distribution through the feedstock during crystal growth to allow the crystalline material to be grown with a square or rectangular shaped cross section.Type: GrantFiled: April 27, 2020Date of Patent: May 30, 2023Assignee: CRYSTAL SYSTEMS, LLCInventors: Frederick Schmid, Cody Riopel, Hui Zhang
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Publication number: 20200255969Abstract: A method of producing a crystalline material is provided that may include providing a crystal growth apparatus comprising a chamber, a hot zone, and a muffle. The hot zone may be disposed within the chamber and include at least one heating system, at least one heat removal system, and a crucible containing feedstock. Additionally, the method may include providing a muffle that surrounds at least two sides of the crucible to ensure uniform temperature distribution through the feedstock during crystal growth to allow the crystalline material to be grown with a square or rectangular shaped cross section.Type: ApplicationFiled: April 27, 2020Publication date: August 13, 2020Inventors: Frederick Schmid, Cody Riopel, Hui Zhang
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Patent number: 10633759Abstract: A sapphire crystal growth apparatus is provided that includes a chamber, a hot zone and a muffle. More specifically, the hot zone is disposed within the chamber and includes at least one heating system, at least one heat removal system, and a crucible containing feedstock. Additionally, a muffle that surrounds at least two sides of the crucible is also provided to ensure uniform temperature distribution through the feedstock during crystal growth to allow the crystalline material to be grown with a square or rectangular shaped cross section.Type: GrantFiled: September 17, 2014Date of Patent: April 28, 2020Assignee: GTAT CorporationInventors: Frederick Schmid, Cody Riopel, Hui Zhang
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Publication number: 20170096746Abstract: A method for minimizing unwanted ancillary reactions in a vacuum furnace used to process a material, such as growing a crystal. The process is conducted in a furnace chamber environment in which helium is admitted to the furnace chamber at a flow rate to flush out impurities and at a predetermined pressure to achieve thermal stability in a heat zone, to minimize heat flow variations and to minimize temperature gradients in the heat zone. During cooldown helium pressure is used to reduce thermal gradients in order to increase cooldown rates.Type: ApplicationFiled: December 19, 2016Publication date: April 6, 2017Inventors: Frederick Schmid, David B. Joyce, John Brouillette, Daniel P. Betty, Ryan Philpott
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Patent number: 9546434Abstract: A method for minimizing unwanted ancillary reactions in a vacuum furnace used to process a material, such as growing a crystal. The process is conducted in a furnace chamber environment in which helium is admitted to the furnace chamber at a flow rate to flush out impurities and at a predetermined pressure to achieve thermal stability in a heat zone, to minimize heat flow variations and to minimize temperature gradients in the heat zone. During cooldown helium pressure is used to reduce thermal gradients in order to increase cooldown rates.Type: GrantFiled: September 1, 2010Date of Patent: January 17, 2017Assignee: GTAT CorporationInventors: Frederick Schmid, David B. Joyce, John Brouillette, Daniel P. Betty, Ryan Philpott
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Publication number: 20150090179Abstract: A sapphire crystal growth apparatus is provided that includes a chamber, a hot zone and a muffle. More specifically, the hot zone is disposed within the chamber and includes at least one heating system, at least one heat removal system, and a crucible containing feedstock. Additionally, a muffle that surrounds at least two sides of the crucible is also provided to ensure uniform temperature distribution through the feedstock during crystal growth to allow the crystalline material to be grown with a square or rectangular shaped cross section.Type: ApplicationFiled: September 17, 2014Publication date: April 2, 2015Inventors: Frederick Schmid, Cody Riopel, Hui Zhang
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Patent number: 8329133Abstract: A method and apparatus for refining metallurgical silicon to produce solar grade silicon for use in photovoltaic cells. A crucible in a vacuum furnace receives a mixture of metallurgical silicon and a reducing agent such as calcium disilicide. The mix is melted in non-oxidizing conditions within the furnace under an argon partial pressure. After melting, the argon partial pressure is decreased to produce boiling and the process ends with directional solidification. The process reduces impurities, such as phosphorus, to a level compatible with solar-grade silicon and reduces other impurities significantly.Type: GrantFiled: October 28, 2009Date of Patent: December 11, 2012Assignee: GT Crystal Systems, LLCInventors: Frederick Schmid, David B Joyce
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Patent number: 8177910Abstract: To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled speed as the crystal grows. Other steps could include moving the crucible, but this process can avoid having to move the crucible. A temperature gradient is produced by shielding only a portion of the heating element; for example, the bottom portion of a cylindrical element can be shielded to cause heat transfer to be less in the bottom of the crucible than at the top, thereby causing a stabilizing temperature gradient in the crucible.Type: GrantFiled: March 1, 2011Date of Patent: May 15, 2012Assignee: GT Crystal Systems, LLCInventors: Frederick Schmid, Chandra P. Khattak, David B. Joyce
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Publication number: 20110217225Abstract: A method and apparatus for refining metallurgical silicon to produce solar grade silicon for use in photovoltaic cells. A crucible in a vacuum furnace receives a mixture of metallurgical silicon and a reducing agent such as calcium disilicide. The mix is melted in non-oxidizing conditions within the furnace under an argon partial pressure. After melting, the argon partial pressure is decreased to produce boiling and the process ends with directional solidification. The process reduces impurities, such as phosphorus, to a level compatible with solar-grade silicon and reduces other impurities significantly.Type: ApplicationFiled: October 28, 2009Publication date: September 8, 2011Applicant: Crystal System, Inc.Inventors: Frederick Schmid, David B. Joyce
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Publication number: 20110146566Abstract: To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled speed as the crystal grows. Other steps could include moving the crucible, but this process can avoid having to move the crucible. A temperature gradient is produced by shielding only a portion of the heating element; for example, the bottom portion of a cylindrical element can be shielded to cause heat transfer to be less in the bottom of the crucible than at the top, thereby causing a stabilizing temperature gradient in the crucible.Type: ApplicationFiled: March 1, 2011Publication date: June 23, 2011Applicant: GT CRYSTAL SYSTEMS, LLCInventors: Frederick SCHMID, Chandra P. KHATTAK, David B. JOYCE
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Patent number: 7918936Abstract: To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled speed as the crystal grows. Other steps could include moving the crucible, but this process can avoid having to move the crucible. A temperature gradient is produced by shielding only a portion of the heating element; for example, the bottom portion of a cylindrical element can be shielded to cause heat transfer to be less in the bottom of the crucible than at the top, thereby causing a stabilizing temperature gradient in the crucible.Type: GrantFiled: October 19, 2007Date of Patent: April 5, 2011Assignee: GT Crystal Systems, LLCInventors: Frederick Schmid, Chandra P. Khattak, David B. Joyce
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Publication number: 20110048316Abstract: A method for minimizing unwanted ancillary reactions in a vacuum furnace used to process a material, such as growing a crystal. The process is conducted in a furnace chamber environment in which helium is admitted to the furnace chamber at a flow rate to flush out impurities and at a predetermined pressure to achieve thermal stability in a heat zone, to minimize heat flow variations and to minimize temperature gradients in the heat zone. During cooldown helium pressure is used to reduce thermal gradients in order to increase cooldown rates.Type: ApplicationFiled: September 1, 2010Publication date: March 3, 2011Applicant: GT CRYSTAL SYSTEMS, LLCInventors: Frederick Schmid, David B. Joyce, John Brouillette, Daniel P. Betty, Ryan Philpott
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Patent number: 7344596Abstract: To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled speed as the crystal grows. Other steps could include moving the crucible, but this process can avoid having to move the crucible. A temperature gradient is produced by shielding only a portion of the heating element; for example, the bottom portion of a cylindrical element can be shielded to cause heat transfer to be less in the bottom of the crucible than at the top, thereby causing a stabilizing temperature gradient in the crucible.Type: GrantFiled: August 25, 2005Date of Patent: March 18, 2008Assignee: Crystal Systems, Inc.Inventors: Frederick Schmid, Chandra P. Khattak, David B. Joyce
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Publication number: 20080035051Abstract: To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled speed as the crystal grows. Other steps could include moving the crucible, but this process can avoid having to move the crucible. A temperature gradient is produced by shielding only a portion of the heating element; for example, the bottom portion of a cylindrical element can be shielded to cause heat transfer to be less in the bottom of the crucible than at the top, thereby causing a stabilizing temperature gradient in the crucible.Type: ApplicationFiled: October 19, 2007Publication date: February 14, 2008Applicant: CRYSTAL SYSTEMS, INC.Inventors: Frederick SCHMID, Chandra KHATTAK, David JOYCE
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Publication number: 20070044707Abstract: To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled speed as the crystal grows. Other steps could include moving the crucible, but this process can avoid having to move the crucible. A temperature gradient is produced by shielding only a portion of the heating element; for example, the bottom portion of a cylindrical element can be shielded to cause heat transfer to be less in the bottom of the crucible than at the top, thereby causing a stabilizing temperature gradient in the crucible.Type: ApplicationFiled: August 25, 2005Publication date: March 1, 2007Inventors: Frederick Schmid, Chandra Khattak, David Joyce
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Publication number: 20040211496Abstract: A silicon nitride crucible is coated with a crucible release coating for use in directional solidification of multicrystalline silicon ingots. The crucible preferably includes reaction bonded silicon nitride crucible. After removing the silicon ingot, the release coating is easily removed and the crucible can be repeatedly recoated and reused.Type: ApplicationFiled: April 25, 2003Publication date: October 28, 2004Applicant: Crystal Systems, Inc.Inventors: Chandra P. Khattak, Frederick Schmid
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Publication number: 20020096165Abstract: A cutting machine has a blade mounted for reciprocating movement. A workpiece is rotated while the blade is reciprocated, and then the workpiece is rotated through smaller angles to complete the cut. A holder is attached to partially cut slices of the workpiece.Type: ApplicationFiled: January 24, 2001Publication date: July 25, 2002Inventors: Frederick Schmid, Maynard B. Smith, Chandra P. Khattak
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Patent number: 6418921Abstract: A cutting machine has a blade mounted for reciprocating movement. A workpiece is rotated while the blade is reciprocated, and then the workpiece is rotated through smaller angles to complete the cut. A holder is attached to partially cut slices of the workpiece.Type: GrantFiled: January 24, 2001Date of Patent: July 16, 2002Assignee: Crystal Systems, Inc.Inventors: Frederick Schmid, Maynard B. Smith, Chandra P. Khattak
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Patent number: 6368403Abstract: An apparatus for purifying metallurgical grade silicon to produce solar grade silicon has a container for holding molten silicon and one or more torches for providing oxygen and hydrogen gas to heat the molten silicon so that the reaction time is prolonged, to create turbulence, and to introduce silica powder and water vapor for reactions with molten silicon. The molten silicon is then directionally solidified.Type: GrantFiled: February 25, 2000Date of Patent: April 9, 2002Assignee: Crystal Systems, Inc.Inventors: Frederick Schmid, Chandra P. Khattak, David B. Joyce
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Patent number: 5972107Abstract: An apparatus for purifying metallurgical grade silicon to produce solar grade silicon has a container for holding molten silicon and one or more submergible torches for providing a flame surrounded by inert gas to heat the molten silicon so that the reaction time is prolonged, to create turbulence, and to introduce silica powder and water vapor for reactions with molten silicon. The molten silicon is then directionally solidified by providing the container in a coolant tank and controlling the coolant level with controllable valves so that further purification is achieved by segregating impurities.Type: GrantFiled: August 28, 1997Date of Patent: October 26, 1999Assignee: Crystal Systems, Inc.Inventors: Frederick Schmid, Chandra P. Khattak