Abstract: According to various embodiments, a method for processing a substrate may include: processing a plurality of device regions in a substrate separated from each other by dicing regions, each device region including at least one electronic component; wherein processing each device region of the plurality of device regions includes: forming a recess into the substrate in the device region, wherein the recess is defined by recess sidewalls of the substrate, wherein the recess sidewalls are arranged in the device region; forming a contact pad in the recess to electrically connect the at least one electronic component, wherein the contact pad has a greater porosity than the recess sidewalls; and singulating the plurality of device regions from each other by dicing the substrate in the dicing region.

Abstract: A wafer contacting device may include: a receiving region configured to receive a wafer; and an elastically deformable carrier disposed in the receiving region and including an electrically conductive surface region.

Abstract: A method for processing at least one carbon fiber according to an embodiment may include: electroplating a first metal layer over at least one carbon fiber, wherein the first metal layer includes a metal which can form a common phase with carbon, electroplating a second metal layer over the first metal layer, wherein the second metal layer includes a metal which can form a common phase with the metal of the first metal layer, and annealing the at least one carbon fiber, the first metal layer, and the second metal layer so that the metal of the first metal layer forms a common phase with the carbon of the at least one carbon fiber at an interface between the first metal layer and the at least one carbon fiber and the metal of the first metal layer forms a common phase with the metal of the second metal layer at an interface between the first metal layer and the second metal layer.

Abstract: A method for fabricating a heat sink including providing a carbon metal composite having a plurality of metal-coated carbon fibers and a plurality of openings, the openings leading from a first side of the carbon metal composite to a second side of the carbon metal composite, disposing the carbon metal composite over a semiconductor element such that the first side of the carbon metal composite faces the semiconductor element, and bonding the carbon metal composite to the semiconductor element by means of an electroplating process, wherein a metal electrolyte is supplied to an interface between the carbon metal composite and the semiconductor element via the plurality of openings.

Abstract: A method of treating an acid effluent including phosphoric acid in accordance with various embodiments may include: providing an acid effluent including phosphoric acid; adding a base and silicon particles from a further effluent to the acid effluent including phosphoric acid so that a mixture is obtained and a solid content is formed; separating from the mixture a solid content including silicon and a salt resulting from a reaction of the base with the acid, so that a clarified effluent can be rejected in the environment and a filter press cake can be obtained and further used as additive for concrete.

Abstract: A method of removing particulate silicon from an effluent water in accordance with various embodiments may include: adding a base to the effluent water, an amount of the added base being sub-stoichiometric with regard to a basic oxidation reaction of an entire amount of silicon contained in the effluent water to ortho-silicic acid or ortho-silicate ions; maintaining a resulting mixture of the effluent water and the base in a predetermined temperature range for a period of time, so that a sediment including silicon is formed; and separating the sediment and the effluent water from each other.

Abstract: In various embodiments, a gamma ray detector is provided. The gamma ray detector may include a converter element, configured to release an electron when a gamma ray moves at least partially through the converter element. The gamma ray detector may further include a semiconductor detector, arranged to receive the electron and configured to produce a signal when the electron moves at least partially through the semiconductor detector; and an amplifier circuit, coupled to the semiconductor detector and configured to amplify the signal produced by the semiconductor detector. In the gamma ray detector, the converter element may be arranged to at least partially shield the amplifier circuit from electromagnetic radiation.

Abstract: According to various embodiments, a method for processing a substrate may include: processing a plurality of device regions in a substrate separated from each other by dicing regions, each device region including at least one electronic component; wherein processing each device region of the plurality of device regions includes: forming a recess into the substrate in the device region, wherein the recess is defined by recess sidewalls of the substrate, wherein the recess sidewalls are arranged in the device region; forming a contact pad in the recess to electrically connect the at least one electronic component, wherein the contact pad has a greater porosity than the recess sidewalls; and singulating the plurality of device regions from each other by dicing the substrate in the dicing region.

Abstract: In various embodiments, a gamma ray detector is provided. The gamma ray detector may include a converter element, configured to release an electron when a gamma ray moves at least partially through the converter element. The gamma ray detector may further include a semiconductor detector, arranged to receive the electron and configured to produce a signal when the electron moves at least partially through the semiconductor detector; and an amplifier circuit, coupled to the semiconductor detector and configured to amplify the signal produced by the semiconductor detector. In the gamma ray detector, the converter element may be arranged to at least partially shield the amplifier circuit from electromagnetic radiation.

Abstract: A method of forming a composite material is provided. The method may include: arranging a suspension in physical contact with a carrier, wherein the suspension may comprise an electrolyte and a plurality of particles of a first component of the composite material; causing the particles of the first component of the composite material to sediment on the carrier, wherein a plurality of spaces may be formed between the sedimented particles; and forming by electroplating a second component of the composite material from the electrolyte in at least a fraction of the plurality of spaces.

Abstract: A method for producing a semiconductor is disclosed, the method having: providing a semiconductor body having a first side and a second side; forming an n-doped zone in the semiconductor body by a first implantation into the semiconductor body via the first side to a first depth location of the semiconductor body; and forming a p-doped zone in the semiconductor body by a second implantation into the semiconductor body via the second side to a second depth location of the semiconductor body, a pn-junction forming between said n-doped zone and said p-doped zone in the semiconductor body.

Abstract: A method of treating an acid effluent including phosphoric acid in accordance with various embodiments may include: providing an acid effluent including phosphoric acid; adding a base and silicon particles from a further effluent to the acid effluent including phosphoric acid so that a mixture is obtained and a solid content is formed; separating from the mixture a solid content including silicon and a salt resulting from a reaction of the base with the acid, so that a clarified effluent can be rejected in the environment and a filter press cake can be obtained and further used as additive for concrete.

Abstract: A preform structure for soldering a semiconductor chip arrangement includes a carbon fiber composite sheet and a solder layer formed over the carbon fiber composite sheet.

Abstract: A device and a method for temporarily closing a switch are disclosed. In an embodiment the device includes a first switch configured to be coupled to a load and a control circuit configured to temporarily close the first switch in response to a detection of a failure event in the first switch.

Abstract: A preform structure for soldering a semiconductor chip arrangement includes a carbon fiber composite sheet and a solder layer formed over the carbon fiber composite sheet.

Abstract: A battery includes a plurality of battery cells encapsulated by an encapsulation structure. The battery also includes an embedding structure separating neighboring ones of the battery cells. An embedding material of at least a part of the embedding structure is arranged between the neighboring battery cells. A shear strength of the embedding material is less than 30% of a shear strength of an encapsulation material of at least a part of the encapsulation structure.

Abstract: An ion source for an implanter includes a first solid state source electrode disposed in an ion source chamber. The first solid state source electrode includes a source material coupled to a first negative potential node. A second solid state source electrode is disposed in the ion source chamber. The second solid state source electrode includes the source material coupled to a second negative potential node, and the first solid state source electrode and the second solid state source electrode are configured to produce ions to be implanted by the implanter.

Abstract: In various embodiments, a gamma ray detector is provided. The gamma ray detector may include a converter element, configured to release an electron when a gamma ray moves at least partially through the converter element. The gamma ray detector may further include a semiconductor detector, arranged to receive the electron and configured to produce a signal when the electron moves at least partially through the semiconductor detector; and an amplifier circuit, coupled to the semiconductor detector and configured to amplify the signal produced by the semiconductor detector. In the gamma ray detector, the converter element may be arranged to at least partially shield the amplifier circuit from electromagnetic radiation.

Abstract: A method to determine a relative concentration of a first kind of ions with respect to a second kind of ions solute in a drop of a liquid comprises providing a voltage to a measurement electrode and a counter electrode, the measurement electrode being provided over a semiconductor substrate comprising a plurality of channels, the channels connecting a cavity and the measurement electrode, wherein the counter electrode is arranged to be in contact with the cavity, when the cavity, the measurement electrode and the counter electrode are arranged to accommodate the drop of a liquid and allow a voltage to be applied to the drop of liquid. The method further comprises determining a current or a change of the current flowing through the drop of liquid in response to the applied voltage; and providing an evaluation signal indicative of the relative concentration based on the determined current or the determined change of current.

Abstract: A method for producing a semiconductor is disclosed, the method having: providing a semiconductor body having a first side and a second side; forming an n-doped zone in the semiconductor body by a first implantation into the semiconductor body via the first side to a first depth location of the semiconductor body; and forming a p-doped zone in the semiconductor body by a second implantation into the semiconductor body via the second side to a second depth location of the semiconductor body, a pn-junction forming between said n-doped zone and said p-doped zone in the semiconductor body.