Abstract: An electrolytic cell includes a cation exchange membrane, a cathode compartment, and an anode compartment. The cathode compartment includes a gas diffusion electrode and a flow channel element, in which the flow channel element is between the cation exchange membrane and the gas diffusion electrode, and has a plurality of flow channels arranged in parallel with each other. The anode compartment includes an anode mesh, in which the cation exchange membrane is between the anode mesh and the flow channel element. A distance between the anode mesh and the gas diffusion electrode is substantially equal to the sum of a first thickness of the cation exchange membrane and a second thickness of the flow channel element. The novel electrolytic cell can combine with a chloralkali electrolytic cell to deal with gaseous CO2 and produce products, e.g., synthesis gas, for other purposes.

Abstract: A method of object status detection for objects supported by a shelf, from shelf image data, includes: obtaining a plurality of images of a shelf, each image including an indication of a gap on the shelf between the objects; registering the images to a common frame of reference; identifying a subset of the gaps having overlapping locations in the common frame of reference; generating a consolidated gap indication from the subset; obtaining reference data including (i) identifiers for the objects and (ii) prescribed locations for the objects within the common frame of reference; based on a comparison of the consolidated gap indication with the reference data, selecting a target object identifier from the reference data; and generating and presenting a status notification for the target product identifier.

Abstract: A method includes attaching a die to a thermal compression bonding (TCB) head through vacuum suction, wherein the die comprises a plurality of conductive pillars, attaching a first substrate to a chuck through vacuum suction, wherein the first substrate comprises a plurality of solder bumps, contacting a first conductive pillar of the plurality of conductive pillars to a first solder bump of the plurality of solder bumps, wherein contacting the first conductive pillar to the first solder bump results in a first height between a topmost surface of the first conductive pillar and a bottommost surface of the first solder bump, and adhering the first solder bump to the first conductive pillar to form a first joint, wherein adhering the first solder bump to the first conductive pillar comprises heating the TCB head.

Abstract: A precharge method for a data driver includes steps of: outputting a display data to a plurality of output terminals of the data driver; outputting a second precharge voltage to an output terminal among the plurality of output terminals prior to outputting the display data to the output terminal, to precharge the output terminal to a voltage level closer to an output voltage; and outputting a first precharge voltage to the output terminal prior to outputting the second precharge voltage. The first precharge voltage provides a faster voltage transition on the output terminal than the second precharge voltage.

Abstract: There is disclosed a method of operating a user equipment in a radio access network. The method includes transmitting control information utilizing a control information format, the control information format being selected from a plurality of different control information formats based on a format indication. The disclosure also pertains to related devices and methods.

Abstract: A model including a first co-simulation component and a second co-simulation component is analyzed. During execution of the model, the first co-simulation component outputs data to the second co-simulation component via a connection. The connection is declared as a continuous-time rate connection for input of the data into the second co-simulation component. Based on analyzing the model, the connection is identified as a discrete-continuous sample time connection based on data being communicated from the first co-simulation component to the second co-simulation component via the connection at a discrete-time rate when the model is executed in a co-simulation manner.

Abstract: A semiconductor structure including a substrate, a first dielectric layer disposed on the substrate, a second dielectric layer disposed on the first dielectric layer and in physical contact with the first dielectric layer, an opening on the substrate and having a lower portion through the first dielectric layer and an upper portion through the second dielectric layer, an conductive layer disposed on the second dielectric layer at two sides of the opening and in physical contact with the second dielectric layer, a contact structure disposed in the lower portion of the opening, and a passivation layer covering a top surface of the contact structure, a sidewall of the second dielectric layer, and a sidewall of the conductive layer.

Abstract: A memory device is provided. The memory device includes a write pass-gate transistor, a read pass-gate transistor, a write word line, and a read word line. The write pass-gate transistor is disposed in a first layer. The read pass-gate transistor is disposed in a second layer above the first layer. The write word line is disposed in a metallization layer above the first layer and electrically coupled to the write pass-gate transistor through a write path. The read word line is disposed in the metallization layer and electrically coupled to the read pass-gate transistor through a read path. The write path is different from the read path.

Abstract: Embodiments include methods for a user equipment (UE) configured to operate in a radio access network (RAN). Such methods include receiving, from a radio node in the RAN, a new feedback indicator (NFI) that indicates whether acknowledgement signaling previously scheduled for transmission by the UE was received by the radio node. The acknowledgement signaling is associated with one or more first downlink (DL) hybrid ARQ (HARQ) processes. Such methods include, when the NFI indicates the acknowledgement signaling was not received by the RAN node, selecting a first HARQ codebook to be used for encoding the acknowledgement signaling together with further acknowledgement signaling associated with one or more second DL HARQ processes. Such methods include, using the selected first HARQ codebook, encoding the acknowledgement signaling and the further acknowledgement signaling to obtain first encoded information and transmitting the first encoded information to the radio node via an uplink (UL) channel.

Abstract: A dual-band antenna module includes a first antenna structure and a second antenna structure. The first antenna structure includes a first insulating substrate, a conductive metal layer, a plurality of grounding supports, and a first feeding pin. The second antenna structure includes a second insulating substrate, a top metal layer, a bottom metal layer, and a second feeding pin. The conductive metal layer is disposed on the first insulating substrate. The grounding supports are configured for supporting the first insulating substrate. The second insulating substrate is disposed above the first insulating substrate. The top metal layer and the bottom metal layer are respectively disposed on a top side and a bottom side of the second insulating substrate. The first frequency band signal transmitted or received by the first antenna structure is smaller than the second frequency band signal transmitted or received by the second antenna structure.

Abstract: A system and method for determining a Physical Uplink Control Channel (PUCCH) power control parameter h(nCQI,nHARQ) for two Carrier Aggregated (CA) PUCCH formats—PUCCH format 3 and channel selection. The value of h(nCQI,nHARQ) may be based on only a linear function of nHARQ for both of the CA PUCCH formats. Based on the CA PUCCH format configured for the User Equipment (UE), the e-Node B (eNB) may instruct the UE to select or apply a specific linear function of nHARQ as a value for the power control parameter h(nCQI,nHARQ), so as to enable the UE to more accurately establish transmit power of its PUCCH signal. Values for another PUCCH power control parameter—?F_PUCCH(F)—are also provided for use with PUCCH format 3. A new offset parameter may be signaled for each PUCCH format that has transmit diversity configured.

Abstract: There is disclosed a method of operating a radio node, the method including transmitting signalling based on constant amplitude decomposition of an input sequence of samples, wherein perturbed constant amplitude decomposition is performed on samples of the input sequence based on a phase change between samples of the input sequence and/or based on an amplitude of one or more of the samples. The disclosure also pertains to related devices and methods.

Abstract: In one example aspect, the present disclosure is directed to a device. The device includes an active region on a semiconductor substrate. The active region extends along a first direction. The device also includes a gate structure on the active region. The gate structure extends along a second direction that is perpendicular to the first direction. Moreover, the gate structure engages with a channel on the active region. The device further includes a source/drain feature on the active region and connected to the channel. A projection of the source/drain feature onto the semiconductor substrate resembles a hexagon.

Abstract: An electronic device and a method for manufacturing the same are provided. The electronic device includes a substrate and a gate structure. The substrate includes a fin. The fin includes a source region and a drain region spaced apart from the source region. The gate structure is located between the source region and the drain region. The gate structure includes a work function layer. The work function layer includes a compound of a metal material and a Group VIA material.

Abstract: A semiconductor structure includes a die, a molding surrounding the die, a first dielectric layer disposed over the die and the molding, and a second dielectric layer disposed between the first dielectric layer and the die, and between the first dielectric layer and the molding. A material content ratio in the first dielectric layer is substantially greater than that in the second dielectric layer. In some embodiments, the material content ratio substantially inversely affects a mechanical strength of the first dielectric layer and the second dielectric layer.

Abstract: A resistive random-access memory (RRAM) device includes a bottom electrode, a high work function layer, a resistive material layer, a top electrode and high work function spacers. The bottom electrode, the high work function layer, the resistive material layer and the top electrode are sequentially stacked on a substrate, wherein the resistive material layer includes a bottom part and a top part. The high work function spacers cover sidewalls of the bottom part, thereby constituting a RRAM cell. The present invention also provides a method of forming a RRAM device.

Abstract: Provided is a resistive random access memory (RRAM). The resistive random access memory includes a plurality of unit structures disposed on a substrate. Each of the unit structures includes a first electrode, and a first metal oxide layer. The first electrode is disposed on the substrate. The first metal oxide layer is disposed on the first electrode. In addition, the resistive random access memory includes a second electrode. The second electrode is disposed on the plurality of unit structures and connected to the plurality of unit structures.

Abstract: In an embodiment, a package includes: an interposer having a first side; a first integrated circuit device attached to the first side of the interposer; a second integrated circuit device attached to the first side of the interposer; an underfill disposed beneath the first integrated circuit device and the second integrated circuit device; and an encapsulant disposed around the first integrated circuit device and the second integrated circuit device, a first portion of the encapsulant extending through the underfill, the first portion of the encapsulant physically disposed between the first integrated circuit device and the second integrated circuit device, the first portion of the encapsulant being planar with edges of the underfill and edges of the first and second integrated circuit devices.

Abstract: A laser inspection system is provided. A laser source emits a laser with a first spectrum and the laser is transmitted by a first optical fiber. A gain optical fiber doped with special ions is connected to the first optical fiber, and a light detector is provided around the gain optical fiber. When the laser with the first spectrum passes through the gain optical fiber, the gain optical fiber absorbs part of the energy level of the laser with the first spectrum, so that the laser with the first spectrum is converted to generate light with a second spectrum based on the frequency conversion phenomenon. The light detector detects the intensity of the light with the second spectrum, so that the power of the laser source can be obtained.

Abstract: Method for performing an unscheduled uplink transmission by a user equipment UE, in an unlicensed portion of a radio spectrum, the method comprising: performing, by the UE, a listen before talk, LBT, operation in the unlicensed portion of the radio spectrum, wherein the LBT operation includes sensing the portion of the radio spectrum for a pre-determined minimum amount of time for traffic; and performing, if no traffic was sensed, the unscheduled uplink transmission, by the UE, of data in an unscheduled mode of operation for at least one transmission burst.