Abstract: A semiconductor structure includes a die, a molding surrounding the die, a first dielectric layer disposed over the die and the molding, and a second dielectric layer disposed between the first dielectric layer and the die, and between the first dielectric layer and the molding. A material content ratio in the first dielectric layer is substantially greater than that in the second dielectric layer. In some embodiments, the material content ratio substantially inversely affects a mechanical strength of the first dielectric layer and the second dielectric layer.

Abstract: Provided is a resistive random access memory (RRAM). The resistive random access memory includes a plurality of unit structures disposed on a substrate. Each of the unit structures includes a first electrode, and a first metal oxide layer. The first electrode is disposed on the substrate. The first metal oxide layer is disposed on the first electrode. In addition, the resistive random access memory includes a second electrode. The second electrode is disposed on the plurality of unit structures and connected to the plurality of unit structures.

Abstract: A laser inspection system is provided. A laser source emits a laser with a first spectrum and the laser is transmitted by a first optical fiber. A gain optical fiber doped with special ions is connected to the first optical fiber, and a light detector is provided around the gain optical fiber. When the laser with the first spectrum passes through the gain optical fiber, the gain optical fiber absorbs part of the energy level of the laser with the first spectrum, so that the laser with the first spectrum is converted to generate light with a second spectrum based on the frequency conversion phenomenon. The light detector detects the intensity of the light with the second spectrum, so that the power of the laser source can be obtained.

Abstract: Method for performing an unscheduled uplink transmission by a user equipment UE, in an unlicensed portion of a radio spectrum, the method comprising: performing, by the UE, a listen before talk, LBT, operation in the unlicensed portion of the radio spectrum, wherein the LBT operation includes sensing the portion of the radio spectrum for a pre-determined minimum amount of time for traffic; and performing, if no traffic was sensed, the unscheduled uplink transmission, by the UE, of data in an unscheduled mode of operation for at least one transmission burst.

Abstract: In an embodiment, a package includes: an interposer having a first side; a first integrated circuit device attached to the first side of the interposer; a second integrated circuit device attached to the first side of the interposer; an underfill disposed beneath the first integrated circuit device and the second integrated circuit device; and an encapsulant disposed around the first integrated circuit device and the second integrated circuit device, a first portion of the encapsulant extending through the underfill, the first portion of the encapsulant physically disposed between the first integrated circuit device and the second integrated circuit device, the first portion of the encapsulant being planar with edges of the underfill and edges of the first and second integrated circuit devices.

Abstract: An embedded smart module including a twistable substrate, an electrode layer, a circuit layer, an insulating layer, an electronic component and a sensing component is provided. The electrode layer is disposed on the twistable substrate. The circuit layer is disposed in the electrode layer and exposed at the surface of the electrode layer. The insulating layer is disposed between the electrode layer and the circuit layer. The electronic component is disposed on the electrode layer and the circuit layer and electrically connected with the electrode layer and the circuit layer. The sensing component is disposed on the electrode layer and the circuit layer and electrically connected with the electrode layer and the circuit layer.

Abstract: A method in a communication device for managing uplink transmissions from the communication device to a network node. The method includes obtaining a timing advance value, the timing advance value indicating a time period in which the communication device shall advance a first uplink subframe transmission to the network node, obtaining information about a location of a gap within the first uplink subframe, the gap having a predefined duration, the location of the gap occurring after the time period indicated in the timing advance value, and performing the first uplink subframe transmission after the predefined duration.

Abstract: A method performed by a wireless device (410) includes transmitting an uplink, UL, burst to a network node (460). The UL burst includes UL control information, UCI, multiplexed in a Physical Uplink Shared Channel, PUSCH. The UCI carries one or more parameters for unlicensed operation, and the UL burst has an associated UL burst structure. The UL burst structure includes a first slot, a full slot, and a last slot.

Abstract: According to some embodiments, a method in a network node comprises determining a first uplink/downlink scheduling pattern for a first plurality of consecutive subframes; transmitting the first uplink/downlink scheduling pattern to a wireless device; transmitting at least one subframe to the wireless device according to the first uplink/downlink scheduling pattern; determining a second uplink/downlink scheduling pattern for a second plurality of consecutive subframes, wherein the first plurality of consecutive subframes and the second plurality of consecutive subframes share at least one subframe; and transmitting the second uplink/downlink scheduling pattern to the wireless device.

Abstract: A network node (14) communicates with a wireless device (12) to provide Hybrid Automatic Repeat Request (HARQ) feedback for autonomous uplink transmissions in an unlicensed spectrum. The network node receives a plurality of autonomous uplink transmissions from the wireless device in the unlicensed spectrum, and transmits HARQ feedback for the plurality of autonomous uplink transmissions to the wireless device, the HARQ feedback comprising a bit map of some or all HARQ processes configured for at least one cell (16) and a corresponding bit acknowledgement mapped to each HARQ process.

Abstract: Semiconductor device includes a substrate having multiple fins formed from a substrate, a first source/drain feature comprising a first epitaxial layer in contact with a first fin, a second epitaxial layer formed on the first epitaxial layer, and a third epitaxial layer formed on the second epitaxial layer, the third epitaxial layer comprising a center portion and an edge portion that is at a different height than the center portion; a fourth epitaxial layer formed on the third epitaxial layer, a second source/drain feature adjacent the first source/drain feature, comprising a first epitaxial layer in contact with a second fin, a second epitaxial layer formed on the first epitaxial layer of the second source/drain feature, a third epitaxial layer formed on the second epitaxial layer of the second source/drain feature, the third epitaxial layer comprising a center portion and an edge portion that is at a different height than the center portion of the third epitaxial layer of the second source/drain feature; a

Abstract: A package structure and methods of forming a package structure are provided. The package structure includes a first die, a second die, a wall structure and an encapsulant. The second die is electrically bonded to the first die. The wall structure is located aside the second die and on the first die. The wall structure is in contact with the first die and a hole is defined within the wall structure for accommodating an optical element. The encapsulant laterally encapsulates the second die and the wall structure.

Abstract: Disclosed is a memory cell including a first transistor having a first terminal coupled to a bit line; a second transistor having a first terminal coupled to a bit line bar; a weight storage circuit coupled between a gate terminal of the first transistor and a gate terminal of the second transistor, storing a weight value, and determining to turn on the first transistor or the second transistor according to the weight value; and a driving circuit coupled to a second terminal of the first transistor, a second terminal of the second transistor, and at least one word line, receiving at least one threshold voltage and at least one input data from the word line, and determining whether to generate an operation current on a path of the turned-on first transistor or the turned-on second transistor according to the threshold voltage and the input data.

Abstract: A method for fabricating a semiconductor device includes the steps of: providing a substrate, wherein the substrate comprises a MRAM region and a logic region; forming a magnetic tunneling junction (MTJ) on the MRAM region; forming a top electrode on the MTJ; and then performing a flowable chemical vapor deposition (FCVD) process to form a first inter-metal dielectric (IMD) layer around the top electrode and the MTJ.

Abstract: Embodiments of the present disclosure provide a method, a transmitter node, a receiver node, and a computer program product for communication of information in a communication channel comprising at least one main band and an adjacent guard band. The method is performed by a transmitter node in a wireless communication network. The method comprises determining whether to transmit information in the guard band based one or more configured transmission parameters associated with the transmitter node. Upon determination to transmit information in the guard band, the method comprises determining transmission power for frequency resources allocated in the guard band based on a spectral mask defining a power density limit across an allocated frequency range. The method further comprises transmitting first information on the frequency resources allocated in the guard band and second information on frequency resources allocated in the main band to a receiver node according to the determined transmission power.

Abstract: A package structure includes a package substrate, a first semiconductor package and a second semiconductor package, an underfill material, a gap filling structure and a heat dissipation structure. The first semiconductor package and the second semiconductor package are electrically bonded to the package substrate. The underfill material is disposed to fill a first space between the first semiconductor package and the package substrate and a second space between the second semiconductor package and the package substrate. The gap filling structure is disposed over the package substrate and in a first gap laterally between the first semiconductor package and the second semiconductor package. The heat dissipation structure is disposed on the package substrate and attached to the first semiconductor package and the second semiconductor package through a thermal conductive layer.

Abstract: The present disclosure provides a semiconductor structure and a method of manufacturing a semiconductor structure. The semiconductor structure includes a substrate, semiconductor structures, an isolation layer, an adhesive layer, a metal layer, a metal nitride layer, a semiconductor layer, a profile modifier layer, and a disconnection structure. The semiconductor structures are disposed on the substrate. The isolation layer is disposed between the semiconductor structures. The metal layer is disposed on an adhesive layer. The metal nitride layer is disposed on the metal layer. The semiconductor layer is disposed on the metal nitride layer. The profile modifier layer is disposed on the semiconductor layer. The disconnection structure is disposed and extending from the profile modifier layer to the isolation layer. A first width of the disconnection structure in the profile modifier layer is substantially the same as a second width of the disconnection structure in the isolation layer.

Abstract: A device includes: a complementary transistor including: a first transistor having a first source/drain region and a second source/drain region; and a second transistor stacked on the first transistor, and having a third source/drain region and a fourth source/drain region, the third source/drain region overlapping the first source/drain region, the fourth source/drain region overlapping the second source/drain region. The device further includes: a first source/drain contact electrically coupled to the third source/drain region; a second source/drain contact electrically coupled to the second source/drain region; a gate isolation structure adjacent the first and second transistors; and an interconnect structure electrically coupled to the first source/drain contact and the second source/drain contact.

Abstract: A resistive random access memory (RRAM) structure includes a RRAM cell, spacers and a dielectric layer. The RRAM cell is disposed on a substrate. The spacers are disposed beside the RRAM cell, wherein widths of top surfaces of the spacers are larger than or equal to widths of bottom surfaces of the spacers. The dielectric layer blanketly covers the substrate and sandwiches the RRAM cell, wherein the spacers are located in the dielectric layer. A method for forming the resistive random access memory (RRAM) structure is also provided.

Abstract: A method in a wireless device (110) comprises obtaining (1004) information related to a signal transmission configuration for autonomous uplink transmission by the wireless device, the information comprising: a set of pre-allocated resources for use by the wireless device in performing autonomous uplink transmission on at least one secondary cell established between the wireless device and a network node (115); and a periodicity associated with the set of pre-allocated resources. The method comprises performing (1008) autonomous uplink transmission according to the obtained information related to the signal transmission configuration.