Abstract: A gait activity learning assistance system, and an application method thereof, includes a main body, at least one movement detecting module, a control module, at least one driving module and at least one dynamic measurement module. The system is able to guide and induce a user to learn gait autonomously by disposing at least one force-transmission unit on at least one limb position of the user, besides, the system is able to measure a dynamic change of the at least one force-transmission unit by the at least one dynamic measurement module while user receiving a gait assistance, and send them back to the control module immediately for a real-time analysis.

Abstract: The present application provides a gait activity learning assistance system and the application method thereof, which comprising a main body, at least one movement detecting module, a control module, at least one driving module and at least one dynamic measurement module. Said system is able to guide and induce users to learn gait autonomously by disposed at least one interlocking unit on at least one limb position, besides, said system is able to measure a dynamic change of at least one the interlocking unit by the at least one dynamic measurement module while user receiving a gait assistance, and send them back to the control module immediately for a real time analysis; therefore, said system could regulate the operation parameter to simulate the rehabilitation of physical therapists.

Abstract: A hydrogen production system has an automatic feeding device connected to a buffer tank, and a first valve controlling hydrogen-producing materials to be fed into the buffer tank or not. The buffer tank connects to a main reactor, and the hydrogen-producing materials in the buffer tank are controlled by a second valve to be fed into the main reactor or not. The main reactor connects to a hydrogen storing tank. A one-way check valve is mounted between the main reactor and the hydrogen storing tank to avoid hydrogen in the hydrogen storing tank flowing back to the main reactor. The hydrogen-producing materials in the main reactor undergo a chemical reaction to produce the hydrogen, and the hydrogen storing tank stores the hydrogen to provide fuel of a fuel cell for reducing transporting cost of the hydrogen and for enhancing safety of storing the hydrogen.

Abstract: A calculating method of configuration cost of a power system adjusts an amount parameter of an electricity storage device and an amount parameter of a first power generation device according to an adjustment procedure to calculate a plurality of cost parameters, and records the cost parameters. The calculating method further selects the smallest cost parameter from the recorded cost parameters, and displays the smallest cost parameter, the amount parameter of the electricity storage device corresponding to the smallest cost parameter, and the amount parameter of the first power generation device corresponding to the smallest cost parameter. Therefore, the user determines the smallest cost parameter, and the amount parameters corresponding to the smallest cost parameter to increase the user's willingness to build the power system.

Abstract: A hydrogen production system has an automatic feeding device connected to a buffer tank, and a first valve controlling hydrogen-producing materials to be fed into the buffer tank or not. The buffer tank connects to a main reactor, and the hydrogen-producing materials in the buffer tank are controlled by a second valve to be fed into the main reactor or not. The main reactor connects to a hydrogen storing tank. A one-way check valve is mounted between the main reactor and the hydrogen storing tank to avoid hydrogen in the hydrogen storing tank flowing back to the main reactor. The hydrogen-producing materials in the main reactor undergo a chemical reaction to produce the hydrogen, and the hydrogen storing tank stores the hydrogen to provide fuel of a fuel cell for reducing transporting cost of the hydrogen and for enhancing safety of storing the hydrogen.

Abstract: A direct-conversion transmitter including an oscillator, a frequency divider, a transmitter, and a filter is provided. The oscillator generates an oscillating signal with an original frequency. The frequency divider performs frequency dividing on the oscillating signal, so as to generate a carrier signal. The transmitter receives the carrier signal from the frequency divider and generates an output signal based on the carrier signal and a data signal. The filter is coupled between the frequency divider and the transmitter. The filter filters out an interference signal fed-back from the transmitter to the oscillator, wherein the interference signal may cause the oscillating signal to float.

Abstract: A direct-conversion transmitter including an oscillator, a frequency divider, a transmitter, and a filter is provided. The oscillator generates an oscillating signal with an original frequency. The frequency divider performs frequency dividing on the oscillating signal, so as to generate a carrier signal. The transmitter receives the carrier signal from the frequency divider and generates an output signal based on the carrier signal and a data signal. The filter is coupled between the frequency divider and the transmitter. The filter filters out an interference signal fed-back from the transmitter to the oscillator, wherein the interference signal may cause the oscillating signal to float.

Abstract: The present invention discloses an electrical control light valve apparatus having liquid gallium. The invention comprises the transparent glass as a substrate, ITO transparent conductive film as the electrodes, the liquid gallium as the valve located on the ITO transparent conductive film, and the partial-transparent glass is located on the top of the electrical control light valve apparatus.

Abstract: An IGFET (40 or 42) has a channel zone (64 or 84) situated in body material (50). Short-channel threshold voltage roll-off and punchthrough are alleviated by arranging for the net dopant concentration in the channel zone to longitudinally reach a local surface minimum at a location between the IGFET's source/drain zones (60 and 62 or 80 and 82) and by arranging for the net dopant concentration in the body material to reach a local subsurface maximum more than 0.1 ?m deep into the body material but not more than 0.1 ?m deep into the body material. The source/drain zones (140 and 142 or 160 and 162) of a p-channel IGFET (120 or 122) are provided with graded-junction characteristics to reduce junction capacitance, thereby increasing switching speed.

Abstract: An IGFET (40 or 42) has a channel zone (64 or 84) situated in body material (50). Short-channel threshold voltage roll-off and punchthrough are alleviated by arranging for the net dopant concentration in the channel zone to longitudinally reach a local surface minimum at a location between the IGFET's source/drain zones (60 and 62 or 80 and 82) and by arranging for the net dopant concentration in the body material to reach a local subsurface maximum more than 0.1 ?m deep into the body material but not more than 0.1 ?m deep into the body material. The source/drain zones (140 and 142 or 160 and 162) of a p-channel IGFET (120 or 122) are provided with graded-junction characteristics to reduce junction capacitance, thereby increasing switching speed.

Abstract: An IGFET (40 or 42) has a channel zone (64 or 84) situated in body material (50). Short-channel threshold voltage roll-off and punchthrough are alleviated by arranging for the net dopant concentration in the channel zone to longitudinally reach a local surface minimum at a location between the IGFET's source/drain zones (60 and 62 or 80 and 82) and by arranging for the net dopant concentration in the body material to reach a local subsurface maximum more than 0.1 ?m deep into the body material but not more than 0.1 ?m deep into the body material. The source/drain zones (140 and 142 or 160 and 162) of a p-channel IGFET (120 or 122) are provided with graded-junction characteristics to reduce junction capacitance, thereby increasing switching speed.

Abstract: The invention discloses a novel control system for a Poly-Chromatic light-emitting diode (LED) lighting system, and applies feed forward and feedback control techniques to regulate the color and luminous outputs. Also, the control system is proposed for achieving luminous and color consistency for Poly-Chromatic LED lighting.

Abstract: Fabrication of an insulated-gate field-effect transistor (110) entails separately introducing three body-material dopants, typically through an opening in a mask, into body material (50) of a semiconductor body so as to reach respective maximum dopant concentrations at three different vertical locations in the body material. A gate electrode (74) is subsequently defined after which a pair of source/drain zones (60 and 62), each having a main portion (60M or 80M) and a more lightly doped lateral extension (60E or 62E), are formed in the semiconductor body. An anneal is performed during or subsequent to introduction of semiconductor dopant that defines the source/drain zones. The body material is typically provided with at least one more heavily doped halo pocket portion (100 and 102) along the source/drain zones. The vertical dopant profile resulting from the body-material dopants alleviates punchthrough and reduces current leakage.

Abstract: A signal processing apparatus for a multi-mode satellite positioning system includes a band-pass filter, a local oscillator circuit, a first mixing circuit, a second mixing circuit, an analog-to-digital converter and a baseband circuit. By properly allocating a local frequency, radio frequency (RF) signals of a Global Positioning System (GPS), a Galileo positioning system and a Global Navigation System (GLONASS) are processed via a single signal path to save hardware cost.

Abstract: The present invention discloses an electrical control light valve apparatus having liquid gallium. The invention comprises the transparent glass as a substrate, ITO transparent conductive film as the electrodes, the liquid gallium as the valve located on the ITO transparent conductive film, and the partial-transparent glass is located on the top of the electrical control light valve apparatus.

Abstract: The invention discloses a novel control system for a Poly-Chromatic light-emitting diode (LED) lighting system, and applies feed forward and feedback control techniques to regulate the color and luminous outputs. Also, the control system is proposed for achieving luminous and color consistency for Poly-Chromatic LED lighting.

Abstract: This invention discloses an optical table and the vibration control method thereof. Using disturbance response decomposing techniques, a double-layer structure is applied to independently control the ground and load disturbances. This invention can simplify the vibration control and improve system performance.

Abstract: A clock generator includes a delta sigma modulator, a counter and a first phase lock loop. The delta sigma modulator sequentially generates a plurality of variable parameters according to a predetermined value and a first input clock signal. The counter, which is connected to the delta sigma modulator, is used to generate an output clock signal in accordance with a counting value and a second input clock signal. The counting value is relevant to the variable parameters. The first phase lock loop, which is connected to the output of the counter, is used to generate an objective clock signal in accordance with the output clock signal.

Abstract: The invention discloses a gait training device for people with walking disability. Using motors and six-bar linkage mechanism, the invention can guide users' ankles to follow preferred gait trajectories, and thus help people with walking disability practice correct gaits.

Abstract: At least one source/drain zone (140, 142, 160, or 162) of an enhancement-mode insulated-gate field-effect transistor (120 or 122) is provided with graded junction characteristics to reduce junction capacitance, thereby increasing switching speed. Each graded junction source/drain zone contains a main portion (140M, 142M, 160M, or 162M) and a more lightly doped lower portion (140L, 142L, 160L, or 162L) underlying, and vertically continuous with, the main portion. The magnitudes of the threshold voltages of a group of such transistors fabricated under the same post-layout fabrication process conditions so as to be of different channel lengths reach a maximum absolute value VTAM when the channel length is at a value LC, are at least 0.03 volt less than VTAM when the channel length is approximately 0.3 ?m greater than LC, and materially decrease with increasing channel length when the channel length is approximately 1.0 ?m greater than LC.