Patents by Inventor Fu Cheng

Fu Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11929409
    Abstract: Semiconductor device includes a substrate having multiple fins formed from a substrate, a first source/drain feature comprising a first epitaxial layer in contact with a first fin, a second epitaxial layer formed on the first epitaxial layer, and a third epitaxial layer formed on the second epitaxial layer, the third epitaxial layer comprising a center portion and an edge portion that is at a different height than the center portion; a fourth epitaxial layer formed on the third epitaxial layer, a second source/drain feature adjacent the first source/drain feature, comprising a first epitaxial layer in contact with a second fin, a second epitaxial layer formed on the first epitaxial layer of the second source/drain feature, a third epitaxial layer formed on the second epitaxial layer of the second source/drain feature, the third epitaxial layer comprising a center portion and an edge portion that is at a different height than the center portion of the third epitaxial layer of the second source/drain feature; a
    Type: Grant
    Filed: October 14, 2022
    Date of Patent: March 12, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Wei Ju Lee, Chun-Fu Cheng, Chung-Wei Wu, Zhiqiang Wu
  • Patent number: 11929833
    Abstract: A network node (14) communicates with a wireless device (12) to provide Hybrid Automatic Repeat Request (HARQ) feedback for autonomous uplink transmissions in an unlicensed spectrum. The network node receives a plurality of autonomous uplink transmissions from the wireless device in the unlicensed spectrum, and transmits HARQ feedback for the plurality of autonomous uplink transmissions to the wireless device, the HARQ feedback comprising a bit map of some or all HARQ processes configured for at least one cell (16) and a corresponding bit acknowledgement mapped to each HARQ process.
    Type: Grant
    Filed: October 5, 2021
    Date of Patent: March 12, 2024
    Assignee: TELEFONAKTIEBOLAGET LM ERICSSON (PUBL)
    Inventors: Reem Karaki, Jung-Fu Cheng, Amitav Mukherjee
  • Publication number: 20240079051
    Abstract: Disclosed is a memory cell including a first transistor having a first terminal coupled to a bit line; a second transistor having a first terminal coupled to a bit line bar; a weight storage circuit coupled between a gate terminal of the first transistor and a gate terminal of the second transistor, storing a weight value, and determining to turn on the first transistor or the second transistor according to the weight value; and a driving circuit coupled to a second terminal of the first transistor, a second terminal of the second transistor, and at least one word line, receiving at least one threshold voltage and at least one input data from the word line, and determining whether to generate an operation current on a path of the turned-on first transistor or the turned-on second transistor according to the threshold voltage and the input data.
    Type: Application
    Filed: November 8, 2022
    Publication date: March 7, 2024
    Applicant: Industrial Technology Research Institute
    Inventors: Chih-Sheng Lin, Tuo-Hung Hou, Fu-Cheng Tsai, Jian-Wei Su, Kuo-Hua Tseng
  • Patent number: 11924011
    Abstract: Embodiments of the present disclosure provide a method, a transmitter node, a receiver node, and a computer program product for communication of information in a communication channel comprising at least one main band and an adjacent guard band. The method is performed by a transmitter node in a wireless communication network. The method comprises determining whether to transmit information in the guard band based one or more configured transmission parameters associated with the transmitter node. Upon determination to transmit information in the guard band, the method comprises determining transmission power for frequency resources allocated in the guard band based on a spectral mask defining a power density limit across an allocated frequency range. The method further comprises transmitting first information on the frequency resources allocated in the guard band and second information on frequency resources allocated in the main band to a receiver node according to the determined transmission power.
    Type: Grant
    Filed: September 15, 2021
    Date of Patent: March 5, 2024
    Assignee: TELEFONAKTIEBOLAGET LM ERICSSON (PUBL)
    Inventors: Muris Sarajlic, Joao Vieira, Jung-Fu Cheng, Robert Baldemair
  • Publication number: 20240073788
    Abstract: A method in a wireless device (110) comprises obtaining (1004) information related to a signal transmission configuration for autonomous uplink transmission by the wireless device, the information comprising: a set of pre-allocated resources for use by the wireless device in performing autonomous uplink transmission on at least one secondary cell established between the wireless device and a network node (115); and a periodicity associated with the set of pre-allocated resources. The method comprises performing (1008) autonomous uplink transmission according to the obtained information related to the signal transmission configuration.
    Type: Application
    Filed: November 6, 2023
    Publication date: February 29, 2024
    Inventors: Reem KARAKI, Jung-Fu CHENG, Havish KOORAPATY, Amitav MUKHERJEE, Evanny OBREGON
  • Publication number: 20240065372
    Abstract: A triboelectric nanosensor includes an elastic body, a liquid metal and a wire. The elastic body includes an inner wall surrounding a chamber, and a plurality of biomimetic shark placoid scale-shaped microstructures adjacent to each other and disposed at at least one portion of the inner wall. The liquid metal is located within the chamber and surrounded by the elastic body. The wire is electrically connected to the liquid metal. The elastic body is pressed to be deformed and restores to change a contact state between the liquid metal and the biomimetic shark placoid scale-shaped microstructures, thereby allowing a plurality of electrons to flow into the liquid metal via the wire or to flow out from the liquid metal via the wire.
    Type: Application
    Filed: November 10, 2022
    Publication date: February 29, 2024
    Inventors: Zong-Hong Lin, Cheng Yeh, Po-Han Wei, Fu-Cheng Kao
  • Publication number: 20240072115
    Abstract: A device includes: a complementary transistor including: a first transistor having a first source/drain region and a second source/drain region; and a second transistor stacked on the first transistor, and having a third source/drain region and a fourth source/drain region, the third source/drain region overlapping the first source/drain region, the fourth source/drain region overlapping the second source/drain region. The device further includes: a first source/drain contact electrically coupled to the third source/drain region; a second source/drain contact electrically coupled to the second source/drain region; a gate isolation structure adjacent the first and second transistors; and an interconnect structure electrically coupled to the first source/drain contact and the second source/drain contact.
    Type: Application
    Filed: February 13, 2023
    Publication date: February 29, 2024
    Inventors: Wei-Xiang You, Wei-De Ho, Hsin Yang Hung, Meng-Yu Lin, Hsiang-Hung Huang, Chun-Fu Cheng, Kuan-Kan Hu, Szu-Hua Chen, Ting-Yun Wu, Wei-Cheng Tzeng, Wei-Cheng Lin, Cheng-Yin Wang, Jui-Chien Huang, Szuya Liao
  • Publication number: 20240072136
    Abstract: A semiconductor structure includes a first transistor, a second transistor, a metal rail, and a first source/drain contact and a second source/drain contact. The first transistor has a gate structure, a first source/drain feature, and a second source/drain feature. The first source/drain feature and the second source/drain feature are on opposite sides of the gate structure. The second transistor has the gate structure, a third source/drain feature directly over the first source/drain feature, and a fourth source/drain feature directly over the second source/drain feature. The metal rail extends in an X-direction and adjacent to the gate structure in a Y-direction. The first source/drain contact and the second source/drain contact each has an L-shape in a Y-Z cross-sectional view. The first source/drain contact electrically connects the first source/drain feature to the metal rail. The second source/drain contact electrically connects the fourth source/drain feature to the metal rail.
    Type: Application
    Filed: August 26, 2022
    Publication date: February 29, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Meng-Yu LIN, Chun-Fu CHENG, Hsiang-Hung HUANG
  • Patent number: 11914764
    Abstract: A head mounted display device, including a frame, a mask, at least one infrared (IR) transmitter, and at least one image capture device, is provided. The mask has a first light reflection layer on a first side. The IR transmitter is disposed in the frame and is used to emit an emitting light beam toward the first light reflection layer. The first light reflection layer reflects the emitting light beam to send a reflective light beam toward a target area. The image capture device is disposed in the frame and is used to capture a target area reflective image of the target area.
    Type: Grant
    Filed: October 28, 2021
    Date of Patent: February 27, 2024
    Assignee: HTC Corporation
    Inventors: Fu-Cheng Fan, Siye Wang
  • Publication number: 20240063968
    Abstract: A network node is configured to communicate with a wireless device. The network node includes a radio interface and processing circuitry configured to transmit a configuration of a set of reference signals via RRC signaling to the wireless device. The radio interface and processing circuitry are further configured to transmit a downlink control information, DCI, that triggers the set of reference signals in multiple slots to the wireless device, where each set of reference signal is confined to OFDM symbols within a slot. In some embodiments, the DCI includes a field which indicates a reference signal set combination ID. In further embodiments the reference signal set combination ID indicates a list of RS set IDs. A method for a network node, a wireless device and a method for a wireless device are also provided.
    Type: Application
    Filed: October 12, 2021
    Publication date: February 22, 2024
    Inventors: Stephen GRANT, Jung-Fu CHENG, Reem KARAKI
  • Publication number: 20240057180
    Abstract: A system and method for providing time domain allocations in a communication system. In an embodiment, an apparatus operable in a communication system and including processing circuitry is configured to receive an indication of a time domain allocation in downlink control information associated with a radio network temporary identifier (“RNTI”) identifying the apparatus, and employ the time domain allocation associated with the RNTI for transmissions associated with the apparatus. In another embodiment, an apparatus operable in a communication system and including processing circuitry is configured to associate a time domain allocation with a RNTI identifying a user equipment, and provide an indication of the time domain allocation in downlink control information to allow the user equipment to employ the time domain allocation associated with the RNTI for transmissions associated therewith.
    Type: Application
    Filed: July 14, 2023
    Publication date: February 15, 2024
    Inventors: Jianwei Zhang, Stefan Parkvall, Fredrik Ovesjö, Zhipeng Lin, Jingya Li, Xingqin Lin, Jung-Fu Cheng, Robert Baldemair, Asbjörn Grövlen, Mattias Frenne
  • Patent number: 11901305
    Abstract: A method of fabricating a semiconductor structure includes forming an alignment mark layer on a substrate; patterning the alignment mark layer for forming at least one alignment mark feature; forming a bottom conductive layer on the patterned alignment mark layer in a substantially conformal manner; forming an insulator layer on the bottom conductive layer; and forming a top conductive layer on the insulator layer.
    Type: Grant
    Filed: June 13, 2022
    Date of Patent: February 13, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.
    Inventors: Kuo-Hung Lee, Chih-Fei Lee, Fu-Cheng Chang, Ching-Hung Kao
  • Publication number: 20240040580
    Abstract: There is disclosed a method of operating a user equipment in a radio access network. The method includes transmitting acknowledgement signaling based on a feedback configuration, the feedback configuration being selected from a set of configured acknowledgement configurations. The disclosure also pertains to related methods and devices.
    Type: Application
    Filed: October 16, 2023
    Publication date: February 1, 2024
    Inventors: Robert BALDEMAIR, Daniel CHEN LARSSON, Jung-Fu CHENG, Stefan PARKVALL
  • Publication number: 20240038719
    Abstract: A method of forming a semiconductor structure is provided. Two wafers are first bonded by oxide bonding. Next, the thickness of a first wafer is reduced using an ion implantation and separation approach, and a second wafer is thinned by using a removal process. First devices are formed on the first wafer, and a carrier is then attached over the first wafer, and an alignment process is performed from the bottom of the second wafer to align active regions of the second wafer for placement of the second devices with active regions of the first wafer for placement of the first devices. The second devices are then formed in the active regions of the second wafer. Furthermore, a via structure is formed through the first wafer, the second wafer and the insulation layer therebetween to connect the first and second devices on the two sides of the insulation layer.
    Type: Application
    Filed: July 29, 2022
    Publication date: February 1, 2024
    Inventors: Wen-Ting LAN, I-Han HUANG, Fu-Cheng CHANG, Lin-Yu HUANG, Shi-Ning JU, Kuo-Cheng CHIANG
  • Patent number: 11888609
    Abstract: There is disclosed a method of operating a user equipment in a radio access network. The method includes transmitting control information utilizing a control information format, the control information format being selected from a plurality of different control information formats based on a format indication. The disclosure also pertains to related devices and methods.
    Type: Grant
    Filed: July 20, 2020
    Date of Patent: January 30, 2024
    Assignee: Telefonaktiebolaget LM Ericsson (Publ)
    Inventors: Robert Baldemair, Jung-Fu Cheng, Stefan Parkvall
  • Patent number: 11888624
    Abstract: There is disclosed a method of operating a user equipment (10) in a radio access network, the method comprising transmitting acknowledgement signaling according to a HARQ codebook, the HARQ codebook being based on a received HARQ reception indication indicating reception of a previous scheduled transmission of acknowledgement signaling. The disclosure also pertains to related devices and methods.
    Type: Grant
    Filed: May 11, 2018
    Date of Patent: January 30, 2024
    Assignee: Telefonaktiebolaget LM Ericsson (publ)
    Inventors: Reem Karaki, Daniel Chen Larsson, Jung-Fu Cheng, Stephen Grant, Havish Koorapaty, Gen Li
  • Patent number: 11888781
    Abstract: There is disclosed a method of operating a transmitting node in a millimeter-wave communication network. The method includes transmitting communication signaling in a transmission timing structure, the communication signaling including leading reference signaling in a leading time interval at the beginning of the transmission timing structure and including trailing reference signaling in a trailing time interval at the end of the timing structure. The leading reference signaling starts with a first reference signaling time-domain sequence, and the trailing reference signaling ending with the first reference time-domain signaling sequence. The disclosure also pertains to related devices and methods.
    Type: Grant
    Filed: January 5, 2023
    Date of Patent: January 30, 2024
    Assignee: TELEFONAKTIEBOLAGET LM ERICSSON (PUBL)
    Inventors: Robert Baldemair, Mehrnaz Afshang, Rikke Apelfrojd, Jung-Fu Cheng, Ning He, Dennis Hui, Stefan Parkvall
  • Publication number: 20240021469
    Abstract: A method includes bonding a first wafer to a second wafer. The first wafer includes a plurality of dielectric layers, a metal pipe penetrating through the plurality of dielectric layers, and a dielectric region encircled by the metal pipe. The dielectric region has a plurality of steps formed of sidewalls and top surfaces of portions of the plurality of dielectric layers that are encircled by the metal pipe. The method further includes etching the first wafer to remove the dielectric region and to leave an opening encircled by the metal pipe, extending the opening into the second wafer to reveal a metal pad in the second wafer, and filling the opening with a conductive material to form a conductive plug in the opening.
    Type: Application
    Filed: July 21, 2023
    Publication date: January 18, 2024
    Inventors: Ssu-Chiang Weng, Ping-Hao Lin, Fu-Cheng Chang
  • Publication number: 20240014042
    Abstract: A semiconductor device includes a fin, first source/drain regions, second source/drain regions, a first nanosheet, a second nanosheet and a metal gate structure. The fin extends in a first direction and protrudes above an insulator. The first source/drain regions are over the fin. The second source/drain regions are over the first source/drain regions. The first nanosheet extends in the first direction between the first source/drain regions. The second nanosheet extends in the first direction between the second source/drain regions. The metal gate structure is over the fin and between the first source/drain regions. The metal gate structure extends in a second direction different from the first direction from a first sidewall to a second sidewall. A first distance in the second direction between the first nanosheet and the first sidewall is smaller than a second distance in the second direction between the first nanosheet and the second sidewall.
    Type: Application
    Filed: July 10, 2022
    Publication date: January 11, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Meng-Yu Lin, Chun-Fu Cheng, Cheng-Yin Wang, Yi-Bo Liao, Szuya Liao
  • Patent number: D1015435
    Type: Grant
    Filed: October 13, 2021
    Date of Patent: February 20, 2024
    Assignee: NATIONAL CENTRAL UNIVERSITY
    Inventors: Ching-Chi Chu, Kai-Wen Lu, Fu-Cheng Hsieh