Patents by Inventor Fu-Ching Tung
Fu-Ching Tung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120132366Abstract: A plasma processing apparatus is disclosed, which includes: a cathode module comprising a plurality of first channels which generate plasma; an anode having a chamber which contains the cathode and having at least one plasma outlet corresponding to the first channels; an electrode connected to a high-frequency electrical power and the cathode; and a plurality of second channels penetrating through the anode; wherein each first channel and each second channel are disposed alternately. A first gas is introduced into the first channels ionized under high frequency electrical power. In the first channels, the free electrons collided brings high density of plasma. The generated plasma is expelled through the plasma outlet to form a plasma diffusion region. A second gas is introduced into the plasma diffusion region through the second channels to take part in the reaction of plasma.Type: ApplicationFiled: June 10, 2011Publication date: May 31, 2012Applicant: Industrial Technology Research InstituteInventors: Pei-Shan Wu, Fu-Ching Tung, Jung-Chen Ho, Tean-Mu Shen, Chia-Ming Chen
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Patent number: 8146923Abstract: A vacuum apparatus of rotary motion entry is disclosed, which comprises: a shaft sleeve, disposed on a cavity wall of a vacuum system; a rotary shaft, ensheathed by the shaft sleeve; and a transmission set, connected to the rotary shaft for driving the same; wherein, the rotary shaft is disposed passing through a hole formed on the base of the shaft sleeve while there are a first bearing, a second bearing, a sealing ring and a shaft seal being arranged separately inside the hole. Moreover, the shaft seal has a flake-like lip flange formed extending toward the center of the hole, that is capable of being extended away from the vacuum system by the inserting of the rotary shaft into the hole, and thereby, enabling the lip flange to engage with the rotary shaft tightly by the atmospheric pressure and thus isolating the outside world from the vacuum system.Type: GrantFiled: November 10, 2009Date of Patent: April 3, 2012Assignee: Industrial Technology Research InstituteInventors: Kuan-Chou Chen, Fu-Ching Tung, Chia-Ming Chen, Pei-Shan Wu, Tean-Mu Shen, Jung-Chen Ho
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PLANE-TYPE FILM CONTINUOUS EVAPORATION SOURCE AND THE MANUFACTURING METHOD AND SYSTEM USING THE SAME
Publication number: 20110195186Abstract: A manufacturing method and system using a plane-type film continuous evaporation source are disclosed, in which the manufacturing method comprises the steps of: providing a plane-type film continuous evaporation source, being a substrate having at least one evaporation material coated on a surface thereof while distributing the at least one evaporation material in a specific area of the substrate capable of covering all the plates to be processed by the evaporated evaporation material; arranging a heater inside the specific area to be used for enabling the at least one evaporation material to evaporate and thus spreading toward the processed plates. Thereby, the evaporated evaporation material can be controlled at the molecular/atomic level for enabling the same to form a film according to surface-nucleation, condensation and growth with superior evenness, nano-scale adjustability, specialized structure and function that can not be achieve by the films from conventional spray coating means.Type: ApplicationFiled: February 9, 2011Publication date: August 11, 2011Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Chien-Chih Chen, Ching-Chiun Wang, Ching-Huei Wu, Fu-Ching Tung -
Patent number: 7927425Abstract: A power-delivery mechanism is provided in the present invention, which utilizes an element with airtight and flexible characteristics coupled to a power-generating unit so as to generate a motion in a specific direction. Besides, an apparatus of plasma -enhanced chemical vapor deposition (PECVD) is also provided in the present invention, which comprises the power-delivery mechanism to load/unload a workpiece onto a stage for processing automatically. Meanwhile, the present invention also provides a height-adjusting unit and a position-indicating unit allowing the operator to adjust the distance between an upper electrode and a lower electrode of the PECVD so that the operator is capable of monitoring and adjusting the distance easily between the upper electrode and the lower electrode outside the chamber of the PECVD.Type: GrantFiled: August 29, 2007Date of Patent: April 19, 2011Assignee: Industrial Technology Research InstituteInventors: Yuan-Yuan Chiang, Kuan-Chou Chen, Fu-Ching Tung
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Publication number: 20110079963Abstract: A vacuum apparatus of rotary motion entry is disclosed, which comprises: a shaft sleeve, disposed on a cavity wall of a vacuum system; a rotary shaft, ensheathed by the shaft sleeve; and a transmission set, connected to the rotary shaft for driving the same; wherein, the rotary shaft is disposed passing through a hole formed on the base of the shaft sleeve while there are a first bearing, a second bearing, a sealing ring and a shaft seal being arranged separately inside the hole. Moreover, the shaft seal has a flake-like lip flange formed extending toward the center of the hole, that is capable of being extended away from the vacuum system by the inserting of the rotary shaft into the hole, and thereby, enabling the lip flange to engage with the rotary shaft tightly by the atmospheric pressure and thus isolating the outside world from the vacuum system.Type: ApplicationFiled: November 10, 2009Publication date: April 7, 2011Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Kuan-Chou Chen, Fu-Ching Tung, Chia-Ming Chen, Pei-Shan Wu, Tean-Mu Shen, Jung-Chen Ho
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Publication number: 20100164381Abstract: A long linear-type microwave plasma source using a variably-reduced-height rectangular waveguide as the plasma reactor has been developed. Microwave power is fed from the both sides of the waveguide and is coupled into plasma through a long slot cut on the broad side of the waveguide. The reduced height of the waveguide is variable in order to control the coupling between microwave and plasma so that the plasma uniformity can remain a high quality when extending the length of the linear-type plasma source.Type: ApplicationFiled: May 22, 2009Publication date: July 1, 2010Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: CHIH-CHEN CHANG, TUNG-CHUAN WU, CHAN-HSING LO, CHING-HUEI WU, MUH-WANG LIANG, FU-CHING TUNG, SHIH-CHIN LIN, JEN-RONG HUANG
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Patent number: 7721673Abstract: The present invention provides a hollow cathode discharging apparatus including a hollow anode electrode, a hollow cathode electrode insulatedly fixed in the hollow anode electrode, a gas distribution pipe fixed in the hollow cathode electrode. The hollow anode electrode and the hollow cathode electrode are formed with anode openings and cathode openings respectively. Defined by the gas distribution pipe and the hollow cathode electrode and along the axis thereof is a spiral pathway winding through the cathode openings, so as to form a plurality of continuous and communicated reaction chambers. The gas distribution pipe is disposed with gas separation apertures communicated and adapted to introduce a reactive gas into the reaction chambers. The communicated reaction chambers enable uniform distribution of the reactive gas and thereby facilitate scale-up of the apparatus in axial. Accordingly, the present invention overcomes drawbacks of the prior art.Type: GrantFiled: January 31, 2007Date of Patent: May 25, 2010Assignee: Industrial Technology Research InstituteInventors: Chen-Chung Du, Ming-Tung Chiang, Fu-Ching Tung, Chin-Feng Cheng, Tean-Mu Shen
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Publication number: 20100123381Abstract: A cathode discharge device is provided. The cathode discharge apparatus includes an anode, a cathode and plural cathode chambers. The cathode is located inside the anode, where the cathode has plural flow channels and at least one flow channel hole, and the plural flow channels are connected to one another through the flow channel hole. The plural cathode chambers are located inside the cathode, wherein each of the cathode chambers has a chamber outlet and a chamber inlet connected with at least one of the flow channels.Type: ApplicationFiled: March 26, 2009Publication date: May 20, 2010Applicant: Industrial Technology Research InstituteInventors: FU-CHING TUNG, Tean-Mu Shen, Jung-Chen Ho, Pei-Shan Wu, Chia-Ming Chen, Kuan-Chou Chen, Jung-Chen Chien, Muh-Wang Liang
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Patent number: 7615636Abstract: A ruthenium complex is provided. The ruthenium complex is represented by the following Formula (I): in which, X is a monodentate anion ligand, R1, R2, R4 and R5 are the same or different substituents and represent alkyl, alkoxy, aminoalkyl, haloalkanes or substituted phenyl group, carboxylic acid group or acid radical salt thereof, sulfonic acid group or acid radical salt thereof, phosphoric acid group or acid radical salt thereof or hydrogen atom. R3 represents perhalogenated alkyl group, alkoxy, alkyl, amino, halogens, or hydrogen atom. The ruthenium complexes are suitable for being used as dye-sensitizers for fabricating dye-sensitized solar cells.Type: GrantFiled: November 14, 2007Date of Patent: November 10, 2009Assignee: Industrial Technology Research InstituteInventors: Ching-Yen Wei, Chao-Ining Yu, Fu-Ching Tung, Yun Chi, Hsing-Yi Chen, I-Hui Lin
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Patent number: 7597186Abstract: A substrate transport device includes a chamber, a rotary wheel, a first magnet, a carrier, and a second magnet. The rotary wheel is disposed outside the chamber. The first magnet is disposed on the rotary wheel. The carrier is disposed in the chamber. The second magnet is disposed on the carrier.Type: GrantFiled: December 26, 2006Date of Patent: October 6, 2009Assignee: Industrial Technology Research InstituteInventors: Yun-Sheng Chung, Fu-Ching Tung, Hsin-Hung Huang
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Publication number: 20090151637Abstract: A microwave-excited plasma source using a ridged wave-guide line-type microwave plasma reactor is disclosed. The microwave-excited plasma source comprises a reaction chamber, a ridged wave-guide and a separation plate. The ridged wave-guide is disposed on the reaction chamber, and comprises a frame portion, a ridge portion and a line-shaped slot. The line-shaped slot is disposed on a first side of the frame portion, and the ridge portion facing the line-shaped slot is disposed on a second side of the frame portion. The separation plate is disposed on the line-shaped slot. Moreover, the ridged wave-guide is suitable for concentrating microwave power, which is transmitted to the reaction chamber through the line-shaped slot in order to excite plasma.Type: ApplicationFiled: May 29, 2008Publication date: June 18, 2009Applicant: Industrial Technology Research InstituteInventors: CHIH-CHEN CHANG, TUNG-CHUAN WU, FU-CHING TUNG, MUH-WANG LIANG, CHING-HUEI WU, CHAN-HSING LO, TEAN-MU SHEN, JUNG-CHEN CHIEN, JUNG-CHEN HO
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Publication number: 20080295771Abstract: A power-delivery mechanism is provided in the present invention, which utilizes an element with airtight and flexible characteristics coupled to a power-generating unit so as to generate a motion in a specific direction. Besides, an apparatus of plasma -enhanced chemical vapor deposition (PECVD) is also provided in the present invention, which comprises the power-delivery mechanism to load/unload a workpiece onto a stage for processing automatically. Meanwhile, the present invention also provides a height-adjusting unit and a position-indicating unit allowing the operator to adjust the distance between an upper electrode and a lower electrode of the PECVD so that the operator is capable of monitoring and adjusting the distance easily between the upper electrode and the lower electrode outside the chamber of the PECVD.Type: ApplicationFiled: August 29, 2007Publication date: December 4, 2008Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Yuan-Yuan Chiang, Kuan-Chou Chen, Fu-Ching Tung
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Publication number: 20080114174Abstract: A ruthenium complex having a chemical formula of RuL1L2X is provided. The chemical formula includes a structural formula represented by the following Formula (I): in which, X is a monodentate anion ligand, L1 and L2 respectively represent a heterocyclic tridentate ligand with a structure shown in the following structural formula (II): and a bipyridine ligand derivative with a structure shown in the following structural formula (III): in which R1, R2, R4 and R5 of L1 and L2 are the same or different substituents and represent alkyl, alkoxy, aminoalkyl, haloalkanes or substituted phenyl group, carboxylic acid group or acid radical salt thereof, sulfonic acid group or acid radical salt thereof, phosphoric acid group or acid radical salt thereof or hydrogen atom. R3 represents perhalogenated alkyl group, alkoxy, alkyl, amino, halogens, or hydrogen atom. The ruthenium complexes are suitable for being used as dye-sensitizers for fabricating dye-sensitized solar cells.Type: ApplicationFiled: November 14, 2007Publication date: May 15, 2008Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Ching-Yen Wei, Chao-Ining Yu, Fu-Ching Tung, Yun Chi, Hsing-Yi Chen, I-Hui Lin
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Publication number: 20080106202Abstract: The present invention provides a hollow cathode discharging apparatus including a hollow anode electrode, a hollow cathode electrode insulatedly fixed in the hollow anode electrode, a gas distribution pipe fixed in the hollow cathode electrode. The hollow anode electrode and the hollow cathode electrode are formed with anode openings and cathode openings respectively. Defined by the gas distribution pipe and the hollow cathode electrode and along the axis thereof is a spiral pathway winding through the cathode openings, so as to form a plurality of continuous and communicated reaction chambers. The gas distribution pipe is disposed with gas separation apertures communicated and adapted to introduce a reactive gas into the reaction chambers. The communicated reaction chambers enable uniform distribution of the reactive gas and thereby facilitate scale-up of the apparatus in axial. Accordingly, the present invention overcomes drawbacks of the prior art.Type: ApplicationFiled: January 31, 2007Publication date: May 8, 2008Inventors: Chen-Chung Du, Ming-Tung Chiang, Fu-Ching Tung, Chin-Feng Cheng, Tean-Mu Shen
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Publication number: 20080038020Abstract: A substrate transport device includes a chamber, a rotary wheel, a first magnet, a carrier, and a second magnet. The rotary wheel is disposed outside the chamber. The first magnet is disposed on the rotary wheel. The carrier is disposed in the chamber. The second magnet is disposed on the carrier.Type: ApplicationFiled: December 26, 2006Publication date: February 14, 2008Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Yun-Sheng Chung, Fu-Ching Tung, Hsin-Hung Huang
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Patent number: 6712926Abstract: The present invention describes a chemical solution recycling apparatus in a spin etching and cleaning process chamber for manufacturing semiconductor devices. Modification of the exterior dimension and the main structure of the process chamber is not necessary. The recycling apparatus in accordance with the present invention may separate different chemical solutions into different vessels and recycle them thereafter. The recycling apparatus comprises a recycling ring moving up and down to collect the solution and a recycling circular tray for sorting the chemical solutions in different trenches and drains. Therefore, the chemical solutions may be collected by assigned vessels or may be recycled into the process chamber after necessary quality inspections.Type: GrantFiled: January 28, 2002Date of Patent: March 30, 2004Assignee: Industrial Technology Research InstituteInventors: Yuan-Yuan Chiang, Fu-Ching Tung, Janathan Wang, Peter L. Mahneke
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Publication number: 20030051813Abstract: The present invention describes a chemical solution recycling apparatus in a spin etching and cleaning process chamber for manufacturing semiconductor devices. Modification of the exterior dimension and the main structure of the process chamber is not necessary. The recycling apparatus in accordance with the present invention may separate different chemical solutions into different vessels and recycle them thereafter. The recycling apparatus comprises a recycling ring moving up and down to collect the solution and a recycling circular tray for sorting the chemical solutions in different trenches and drains. Therefore, the chemical solutions may be collected by assigned vessels or recycled into the process chamber after necessary quality inspections.Type: ApplicationFiled: January 28, 2002Publication date: March 20, 2003Inventors: Yuan-Yuan Chiang, Fu-Ching Tung, Janathan Wang, Peter L. Mahneke
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Publication number: 20020066806Abstract: The present invention relates to a nozzle and adjust module of chemicals when wafers are processed during the IC manufacturing process. After wafers are loaded on a chuck of a reaction chamber, five chemicals required for the manufacturing process are transported into the passages, and are sprayed on the surfaces of rotating wafers via different nozzles. The centrifugal effect due to the rotation of a main motor is exploited to coat the chemicals on the whole wafer quickly and uniformly. The present invention can apply to both closed and open reaction chambers. The spray head of the present invention has a specially designed angle, and has level adjusting and height adjusting functions so that high flexibility in the manufacturing process can be obtained.Type: ApplicationFiled: December 4, 2000Publication date: June 6, 2002Inventors: Fu-Ching Tung, Chia-Ming Chen, Jen-Rong Huang, Jonathan Wang, Peter L. Mahneke
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Patent number: 6390394Abstract: The present invention relates to a nozzle and adjust module of chemicals when wafers are processed during the IC manufacturing process. After wafers are loaded on a chuck of a reaction chamber, five chemicals required for the manufacturing process are transported into the passages, and are sprayed on the surfaces of rotating wafers via different nozzles. The centrifugal effect due to the rotation of a main motor is exploited to coat the chemicals on the whole wafer quickly and uniformly. The present invention can apply to both closed and open reaction chambers. The spray head of the present invention has a specially designed angle, and has level adjusting and height adjusting functions so that high flexibility in the manufacturing process can be obtained.Type: GrantFiled: December 4, 2000Date of Patent: May 21, 2002Assignee: Industrial Technology Research InstituteInventors: Fu-Ching Tung, Chia-Ming Chen, Jen-Rong Huang, Jonathan Wang, Peter L. Mahneke
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Patent number: 6220771Abstract: A wafer backside protection apparatus includes a motor, a vacuum chuck, an annular seat and a top cover. The motor has an output shaft upon which the chuck is mounted. The chuck has a front surface to suck and hold a wafer from its backside. The chuck has a backside in which a water guard ring and a plurality of slant bores are formed. The slant bores run from the water guard ring through the wafer front surface. The annular seat is located below the chuck and has two symmetrical slant nozzles projecting toward motor rotating direction for ejecting protection liquid to the water guard ring. Protection liquid may be spun and splashed out through the slant bores to form a protection liquid film between the chuck and the wafer backside due to centrifugal force resulting from chuck and wafer rotation driven by the motor. The protection liquid film may protect wafer backside from chemical erosion and contamination resulting from wafer production process.Type: GrantFiled: December 15, 1999Date of Patent: April 24, 2001Assignee: Industrial Technology Research InstituteInventors: Fu-Ching Tung, Hong-Ming Chen, Wu-Lang Lin, Chia-Ming Chen, Jen-Rong Huang, Peter L. Mahneke, Janathan Wang