Abstract: An integrated circuit includes a specific pin, an output circuit, a voltage detector, and a controller. The output circuit is coupled to the specific pin. The voltage detector obtains a detection voltage value from the specific pin. In response to an alert request, the controller provides a control signal to the output circuit based on the detection voltage value, so as to selectively control the output circuit to transmit the alert signal to the specific pin. When the control signal instructs the integrated circuit to operate in a blocking mode, the output circuit blocks the alert signal from being transmitted to the specific pin. When the control signal instructs the integrated circuit to operate in a transmission mode, the output circuit transmits the alert signal to the specific pin.

Abstract: A method of forming a semiconductor device includes implanting dopants of a first conductivity type into a semiconductor substrate to form a first well, epitaxially growing a channel layer over the semiconductor substrate, forming a fin from the second semiconductor material, and forming a gate structure over a channel region of the fin. The semiconductor substrate includes a first semiconductor material. Implanting the dopants may be performed at a temperature in a range of 150° C. to 500° C. The channel layer may include a second semiconductor material. The channel layer may be doped with dopants of the first conductivity type.

Abstract: A method of transferring semiconductor wafers and a semiconductor wafer support device including lift pins having a first end configured to contact a backside surface of the semiconductor wafer and at least one stress reduction feature. The stress reduction feature may be configured to reduce contact stress between the lift pins and the wafer.

Abstract: The disclosure provides a filtering device comprising a housing, a blocking member and a screening member. The housing includes a body, an inlet end and an outlet end. The housing forms an accommodation space. The inlet end and the outlet end are respectively formed at two ends of the accommodating space. The inlet end is capable of receiving fluid. The blocking member is capable of splitting the fluid into a plurality of fluids and collecting the non-fluid composition of the secondary fluid having a first size. The screening member is disposed between the inlet end and the blocking member, and the screening member is configured to receive the secondary fluid to limit the non-fluid composition having a second size of the secondary fluid to the screening member. After the secondary fluid passes through the shield and the screening member, the secondary fluid is output from the outlet end.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a semiconductor structure over a semiconductor substrate. The method also includes implanting carbon into the semiconductor structure. The method further includes implanting gallium into the semiconductor structure. In addition, the method includes heating the semiconductor structure after the implanting of carbon and gallium.

Abstract: A tire is disclosed, including a plurality of blocks, each has an outer surface bulging outward and two lateral walls. An extension line is defined on the surface of each flat segment of each block. Each extension line has a first point on the flat segment. A first horizontal reference line is defined by connecting two first points. A second horizontal reference line is defined on the outer surface with two ends thereof contacting the outer surface. The second horizontal reference line is 0.85 times as long as the first horizontal reference line. A vertical distance between the outer surface and the second horizontal reference line is 0.2-0.8 mm. Whereby, the tire could provide good drainage performance and adequate grip.

Abstract: An integrated circuit includes a specific pin, an output circuit, a voltage detector, and a controller. The output circuit is coupled to the specific pin. The voltage detector obtains a detection voltage value from the specific pin. In response to an alert request, the controller provides a control signal to the output circuit based on the detection voltage value, so as to selectively control the output circuit to transmit the alert signal to the specific pin. When the control signal instructs the integrated circuit to operate in a blocking mode, the output circuit blocks the alert signal from being transmitted to the specific pin. When the control signal instructs the integrated circuit to operate in a transmission mode, the output circuit transmits the alert signal to the specific pin.

Abstract: A method for forming a semiconductor structure comprises heating a solid material to form a gaseous substance; ionizing the gaseous substance to produce a first type of ions; and implanting the first type of ions into a semiconductor substrate. The method can achieve better abruptness, better shallow junction depth, and better sheet resistance.

Abstract: A method of synthesizing carboxyl-modified molybdenum disulfide comprises the steps of a) preparing a molybdenum disulfide solution; b) adding hydrogen bromide (HBr) to the molybdenum disulfide solution, followed by blending the mixture; and c) adding oxalic acid (OA) to the molybdenum disulfide solution, followed by blending the mixture. The molybdenum disulfide synthesized by the method is applicable to a biosensing chip. The carboxyl-modified molybdenum disulfide effectively enhances sensitivity of a detection device having the biosensing chip.

Abstract: The disclosure provides a filtering device comprising a housing, a blocking member and a screening member. The housing includes a body, an inlet end and an outlet end. The housing forms an accommodation space. The inlet end and the outlet end are respectively formed at two ends of the accommodating space. The inlet end is capable of receiving fluid. The blocking member is capable of splitting the fluid into a plurality of fluids and collecting the non-fluid composition of the secondary fluid having a first size. The screening member is disposed between the inlet end and the blocking member, and the screening member is configured to receive the secondary fluid to limit the non-fluid composition having a second size of the secondary fluid to the screening member. After the secondary fluid passes through the shield and the screening member, the secondary fluid is output from the outlet end.

Abstract: A molybdenum disulfide-containing biosensing chip includes a transparent substrate; a metal layer disposed on the transparent substrate; and a molybdenum disulfide layer disposed on the metal layer; wherein the molybdenum disulfide layer is carboxyl (—COOH)-modified. The carboxyl (—COOH)-modified molybdenum disulfide layer effectively enhances sensitivity of a detection device having the biosensing chip. The biosensing chip is applicable to detection of various biological molecules.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a semiconductor structure over a semiconductor substrate. The method also includes implanting carbon into the semiconductor structure. The method further includes implanting gallium into the semiconductor structure. In addition, the method includes heating the semiconductor structure after the implanting of carbon and gallium.

Abstract: A method of synthesizing carboxyl-modified molybdenum disulfide comprises the steps of a) preparing a molybdenum disulfide solution; b) adding hydrogen bromide (HBr) to the molybdenum disulfide solution, followed by blending the mixture; and c) adding oxalic acid (OA) to the molybdenum disulfide solution, followed by blending the mixture. The molybdenum disulfide synthesized by the method is applicable to a biosensing chip. The carboxyl-modified molybdenum disulfide effectively enhances sensitivity of a detection device having the biosensing chip.

Abstract: A method for forming a semiconductor structure comprises heating a solid material to form a gaseous substance; ionizing the gaseous substance to produce a first type of ions; and implanting the first type of ions into a semiconductor substrate. The method can achieve better abruptness, better shallow junction depth, and better sheet resistance.