Patents by Inventor Fu-Chun Huang
Fu-Chun Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12377441Abstract: The present disclosure relates to an integrated chip structure. The integrated chip structure includes a dielectric stack disposed on a substrate. The integrated chip structure further includes one or more piezoelectric ultrasonic transducers (PMUTs) and one or more capacitive ultrasonic transducers (CMUTs). The one or more PMUTs include a piezoelectric stack disposed within the dielectric stack over one or more PMUT cavities. The one or more CMUTs include electrodes disposed within the dielectric stack and separated by one or more CMUT cavities. An isolation chamber is arranged within the dielectric stack laterally between the one or more PMUTs and the one or more CMUTs. The isolation chamber vertically extends past at least a part of both the one or more PMUTs and the one or more CMUTs.Type: GrantFiled: June 6, 2022Date of Patent: August 5, 2025Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ching-Hui Lin, Yi-Hsien Chang, Chun-Ren Cheng, Fu-Chun Huang, Yi Heng Tsai, Shih-Fen Huang, Chao-Hung Chu, Po-Chen Yeh
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Patent number: 12361745Abstract: The structure of a semiconductor device with an array of bioFET sensors, a biometric fingerprint sensor, and a temperature sensor and a method of fabricating the semiconductor device are disclosed. A method for fabricating the semiconductor device includes forming a gate electrode on a first side of a semiconductor substrate, forming a channel region between source and drain regions within the semiconductor substrate, and forming a piezoelectric sensor region on a second side of the semiconductor substrate. The second side is substantially parallel and opposite to the first side. The method further includes forming a temperature sensing electrode on the second side during the forming of the piezoelectric sensor region, forming a sensing well on the channel region, and binding capture reagents on the sensing well.Type: GrantFiled: April 19, 2021Date of Patent: July 15, 2025Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ching-Hui Lin, Chun-Ren Cheng, Shih-Fen Huang, Fu-Chun Huang
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Patent number: 12364162Abstract: In some embodiments, a piezoelectric biosensor is provided. The piezoelectric biosensor includes a semiconductor substrate. A first electrode is disposed over the semiconductor substrate. A piezoelectric structure is disposed on the first electrode. A second electrode is disposed on the piezoelectric structure. A sensing reservoir is disposed over the piezoelectric structure and exposed to an ambient environment, where the sensing reservoir is configured to collect a fluid comprising a number of bio-entities.Type: GrantFiled: May 31, 2024Date of Patent: July 15, 2025Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ching-Hui Lin, Chun-Ren Cheng, Shih-Fen Huang, Fu-Chun Huang
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Publication number: 20250207687Abstract: Various embodiments of the present disclosure are directed to a normally-open piezoelectric microelectromechanical systems (MEMS) device. A cantilever has a first end overlying and bonded to a substrate and further has a second end, opposite the first end, overlying an actuator cavity. A piezoelectric actuator is on the cantilever. A valve vane is bonded to the second end of the cantilever and further overlies a valve cavity laterally adjacent to the actuator cavity. The cantilever curves downward from the first end to the second end, such that the valve vane is inclined and the valve cavity is open. Actuation of the piezoelectric actuator curves the cantilever upward to close the valve cavity.Type: ApplicationFiled: March 27, 2024Publication date: June 26, 2025Inventors: Yi-Hsien Chang, Fu-Chun Huang, Po-Chen Yeh, Ching-Hui Lin, Chao-Hung Chu, Chun-Ren Cheng, Shih-Fen Huang
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Patent number: 12326416Abstract: A sensor array includes a semiconductor substrate, a first plurality of FET sensors and a second plurality of FET sensors. Each of the FET sensors includes a channel region between a source and a drain region in the semiconductor substrate and underlying a gate structure disposed on a first side of the channel region, and a dielectric layer disposed on a second side of the channel region opposite from the first side of the channel region. A first plurality of capture reagents is coupled to the dielectric layer over the channel region of the first plurality of FET sensors, and a second plurality of capture reagents is coupled to the dielectric layer over the channel region of the second plurality of FET sensors. The second plurality of capture reagents is different from the first plurality of capture reagents.Type: GrantFiled: April 10, 2023Date of Patent: June 10, 2025Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ching-Hui Lin, Chun-Ren Cheng, Shih-Fen Huang, Fu-Chun Huang
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Publication number: 20250145454Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a first device and a second device disposed adjacent to the first device; a conductive pillar disposed adjacent to the first device or the second device; a molding surrounding the first device, the second device and the conductive pillar; and a redistribution layer (RDL) over the first device, the second device, the molding and the conductive pillar, wherein the RDL electrically connects the first device to the second device and includes an opening penetrating the RDL and exposing a sensing area over the first device.Type: ApplicationFiled: January 6, 2025Publication date: May 8, 2025Inventors: PO CHEN YEH, YI-HSIEN CHANG, FU-CHUN HUANG, CHING-HUI LIN, CHIAHUNG LIU, SHIH-FEN HUANG, CHUN-REN CHENG
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Patent number: 12227410Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a first device and a second device disposed adjacent to the first device; a conductive pillar disposed adjacent to the first device or the second device; a molding surrounding the first device, the second device and the conductive pillar; and a redistribution layer (RDL) over the first device, the second device, the molding and the conductive pillar, wherein the RDL electrically connects the first device to the second device and includes an opening penetrating the RDL and exposing a sensing area over the first device.Type: GrantFiled: January 5, 2024Date of Patent: February 18, 2025Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Po Chen Yeh, Yi-Hsien Chang, Fu-Chun Huang, Ching-Hui Lin, Chiahung Liu, Shih-Fen Huang, Chun-Ren Cheng
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Publication number: 20240401714Abstract: A piezoelectric valve may be formed using semiconductor processing techniques such that the piezoelectric valve is biased in a normally closed configuration. Actuation of the piezoelectric valve may be achieved through the use of a piezoelectric-based actuation layer of the piezoelectric valve. The piezoelectric valve may be implemented in various use cases, such as a dispensing valve for precise drug delivery, a relief valve to reduce the occlusion effect in speaker-based devices (e.g., in-ear headphones), a pressure control valve, and/or another type of valve that is configured for microfluidic control, among other examples. The normally closed configuration of the piezoelectric valve enables the piezoelectric valve to operate as a normally closed valve with reduced power consumption.Type: ApplicationFiled: August 22, 2023Publication date: December 5, 2024Inventors: Yi-Hsien CHANG, Fu-Chun HUANG, Po-Chen YEH, Chao-Hung CHU, Ching-Hui LIN, Chun-Ren CHENG, Shih-Fen HUANG
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Publication number: 20240393291Abstract: A sensor array includes a semiconductor substrate, a first plurality of FET sensors and a second plurality of FET sensors. Each of the FET sensors includes a channel region between a source and a drain region in the semiconductor substrate and underlying a gate structure disposed on a first side of the channel region, and a dielectric layer disposed on a second side of the channel region opposite from the first side of the channel region. A first plurality of capture reagents is coupled to the dielectric layer over the channel region of the first plurality of FET sensors, and a second plurality of capture reagents is coupled to the dielectric layer over the channel region of the second plurality of FET sensors. The second plurality of capture reagents is different from the first plurality of capture reagents.Type: ApplicationFiled: July 31, 2024Publication date: November 28, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ching-Hui Lin, Chun-Ren CHENG, Shih-Fen HUANG, Fu-Chun HUANG
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PIEZOELECTRIC DEVICE HAVING PIEZOELECTRIC STRUCTURE DISPOSED BETWEEN PATTERNED CONDUCTIVE STRUCTURES
Publication number: 20240397828Abstract: Various embodiments of the present disclosure are directed towards a piezoelectric device including a piezoelectric structure over a substrate. A first conductive structure is disposed on a lower surface of the piezoelectric structure. The first conductive structure includes one or more first movable elements directly contacting the piezoelectric structure. A second conductive structure is disposed on an upper surface of the piezoelectric structure. The second conductive structure includes one or more second movable elements directly contacting the piezoelectric structure. The one or more second movable elements directly overlie the one or more first movable elements.Type: ApplicationFiled: May 22, 2023Publication date: November 28, 2024Inventors: Ching-Hui Lin, Yi-Hsien Chang, Chun-Ren Cheng, Shih-Fen Huang, Fu-Chun Huang, Chao-Hung Chu, Po-Chen Yeh -
Publication number: 20240331439Abstract: The structure of a semiconductor device with an array of bioFET sensors, a biometric fingerprint sensor, and a temperature sensor and a method of fabricating the semiconductor device are disclosed. A method for fabricating the semiconductor device includes forming a gate electrode on a first side of a semiconductor substrate, forming a channel region between source and drain regions within the semiconductor substrate, and forming a piezoelectric sensor region on a second side of the semiconductor substrate. The second side is substantially parallel and opposite to the first side. The method further includes forming a temperature sensing electrode on the second side during the forming of the piezoelectric sensor region, forming a sensing well on the channel region, and binding capture reagents on the sensing well.Type: ApplicationFiled: June 13, 2024Publication date: October 3, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ching-Hui LIN, Chen-Ren CHENG, Shih-Fen HUANG, Fu-Chun HUANG
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Publication number: 20240324463Abstract: In some embodiments, a piezoelectric biosensor is provided. The piezoelectric biosensor includes a semiconductor substrate. A first electrode is disposed over the semiconductor substrate. A piezoelectric structure is disposed on the first electrode. A second electrode is disposed on the piezoelectric structure. A sensing reservoir is disposed over the piezoelectric structure and exposed to an ambient environment, where the sensing reservoir is configured to collect a fluid comprising a number of bio-entities.Type: ApplicationFiled: May 31, 2024Publication date: September 26, 2024Inventors: Ching-Hui Lin, Chun-Ren Cheng, Shih-Fen Huang, Fu-Chun Huang
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INTEGRATION SCHEME FOR BREAKDOWN VOLTAGE ENHANCEMENT OF A PIEZOELECTRIC METAL-INSULATOR-METAL DEVICE
Publication number: 20240290541Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a first conductive structure and a second conductive structure. A dielectric structure is arranged between the first conductive structure and the second conductive structure. The dielectric structure comprises an upper region over a lower region. The lower region comprises a first lateral surface and a second lateral surface on opposing sides of the upper region. A passivation layer overlies the second conductive structure and the dielectric structure. The passivation layer comprises a lateral segment contacting the first lateral surface. A height of the lateral segment is greater than a height of the upper region. A top surface of the lateral segment is below a top surface of the passivation layer.Type: ApplicationFiled: May 9, 2024Publication date: August 29, 2024Inventors: Anderson Lin, Chun-Ren Cheng, Chi-Yuan Shih, Shih-Fen Huang, Yi-Chuan Teng, Yi Heng Tsai, You-Ru Lin, Yen-Wen Chen, Fu-Chun Huang, Fan Hu, Ching-Hui Lin, Yan-Jie Liao -
Patent number: 12029130Abstract: In some embodiments, a piezoelectric biosensor is provided. The piezoelectric biosensor includes a semiconductor substrate. A first electrode is disposed over the semiconductor substrate. A piezoelectric structure is disposed on the first electrode. A second electrode is disposed on the piezoelectric structure. A sensing reservoir is disposed over the piezoelectric structure and exposed to an ambient environment, where the sensing reservoir is configured to collect a fluid comprising a number of bio-entities.Type: GrantFiled: August 4, 2022Date of Patent: July 2, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ching-Hui Lin, Chun-Ren Cheng, Shih-Fen Huang, Fu-Chun Huang
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Integration scheme for breakdown voltage enhancement of a piezoelectric metal-insulator-metal device
Patent number: 11984261Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a dielectric structure sandwiched between a first electrode and a bottom electrode. A passivation layer overlies the second electrode and the dielectric structure. The passivation layer comprises a horizontal surface vertically below a top surface of the passivation layer. The horizontal surface is disposed above a top surface of the dielectric structure.Type: GrantFiled: August 25, 2021Date of Patent: May 14, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Anderson Lin, Chun-Ren Cheng, Chi-Yuan Shih, Shih-Fen Huang, Yi-Chuan Teng, Yi Heng Tsai, You-Ru Lin, Yen-Wen Chen, Fu-Chun Huang, Fan Hu, Ching-Hui Lin, Yan-Jie Liao -
Publication number: 20240140782Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a first device and a second device disposed adjacent to the first device; a conductive pillar disposed adjacent to the first device or the second device; a molding surrounding the first device, the second device and the conductive pillar; and a redistribution layer (RDL) over the first device, the second device, the molding and the conductive pillar, wherein the RDL electrically connects the first device to the second device and includes an opening penetrating the RDL and exposing a sensing area over the first device.Type: ApplicationFiled: January 5, 2024Publication date: May 2, 2024Inventors: PO CHEN YEH, YI-HSIEN CHANG, FU-CHUN HUANG, CHING-HUI LIN, CHIAHUNG LIU, SHIH-FEN HUANG, CHUN-REN CHENG
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Patent number: 11897759Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a first device and a second device disposed adjacent to the first device; a conductive pillar disposed adjacent to the first device or the second device; a molding surrounding the first device, the second device and the conductive pillar; and a redistribution layer (RDL) over the first device, the second device, the molding and the conductive pillar, wherein the RDL electrically connects the first device to the second device and includes an opening penetrating the RDL and exposing a sensing area over the first device.Type: GrantFiled: June 10, 2022Date of Patent: February 13, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Po Chen Yeh, Yi-Hsien Chang, Fu-Chun Huang, Ching-Hui Lin, Chiahung Liu, Shih-Fen Huang, Chun-Ren Cheng
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Publication number: 20230399225Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a first device and a second device disposed adjacent to the first device; a conductive pillar disposed adjacent to the first device or the second device; a molding surrounding the first device, the second device and the conductive pillar; and a redistribution layer (RDL) over the first device, the second device, the molding and the conductive pillar, wherein the RDL electrically connects the first device to the second device and includes an opening penetrating the RDL and exposing a sensing area over the first device.Type: ApplicationFiled: June 10, 2022Publication date: December 14, 2023Inventors: PO CHEN YEH, YI-HSIEN CHANG, FU-CHUN HUANG, CHING-HUI LIN, CHIAHUNG LIU, SHIH-FEN HUANG, CHUN-REN CHENG
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Publication number: 20230387164Abstract: The present disclosure relates to an integrated chip including a semiconductor layer and a photodetector disposed along the semiconductor layer. A color filter is over the photodetector. A micro-lens is over the color filter. A dielectric structure comprising one or more dielectric layers is over the micro-lens. A receptor layer is over the dielectric structure. An optical signal enhancement structure is disposed along the dielectric structure and between the receptor layer and the micro-lens.Type: ApplicationFiled: May 25, 2022Publication date: November 30, 2023Inventors: Yi-Hsien Chang, Shih-Fen Huang, Chun-Ren Cheng, Fu-Chun Huang, Ching-Hui Lin
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Publication number: 20230320227Abstract: A method for manufacturing a semiconductor structure is provided. The method may include several operations. A piezoelectric capacitor is formed over a substrate, wherein the piezoelectric capacitor includes a metal electrode. An intermediate layer is formed on the metal electrode, and is patterned using a first mask layer as a mask. A metal layer is formed on the intermediate layer, wherein the metal layer electrically connects to the metal electrode. The metal layer is patterned using a second mask layer, wherein the intermediate layer is within a coverage area of the metal layer from a top-view perspective after the patterning of the metal layer. A semiconductor structure thereof is also provided.Type: ApplicationFiled: March 29, 2022Publication date: October 5, 2023Inventors: CHING-HUI LIN, FU-CHUN HUANG, CHUN-REN CHENG, WEI CHUN WANG, CHAO-HUNG CHU, YI-HSIEN CHANG, PO-CHEN YEH, CHI-YUAN SHIH, SHIH-FEN HUANG, YAN-JIE LIAO, SHENG KAI YEH