Patents by Inventor Fu-Hsiang Su

Fu-Hsiang Su has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200043787
    Abstract: Semiconductor devices are provided, and includes a substrate, a first gate structure and a second gate structure over the substrate, a first hard mask on the first gate structure and a second hard mask on the second gate structure and a third hard mask. The third hard mask is disposed in a dielectric layer between the first gate structure and the second gate structure and disposed between the first hard mask and the second hard mask.
    Type: Application
    Filed: October 30, 2018
    Publication date: February 6, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Fu-Hsiang Su, Jyh-Huei Chen, Kuo-Chiang Tsai, Ke-Jing Yu
  • Publication number: 20110241042
    Abstract: The invention discloses a nanocrystal-based optoelectronic device and method of fabricating the same, such as light-emitting diode, photodetector, solar cell, etc. The optoelectronic device according to the invention includes a substrate of a first conductive type, N active layers formed on the substrate and a transparent conductive layer formed on the most-top active layer. Each active layer is constituted by a plurality of nanocrystals. Each nanocrystal is wrapped by a passivation layer.
    Type: Application
    Filed: October 4, 2010
    Publication date: October 6, 2011
    Inventors: Miin-Jang Chen, Shieh-Yang Sun, Fu-Hsiang Su, Ching-Huang Chen, Ying-Tsang Shih