Abstract: A semiconductor device includes a substrate having a first conductivity type and an epitaxial layer disposed on the substrate. A first trench and a second trench are disposed in the epitaxial layer. A first body region and a second body region both having a second conductivity type are disposed in the epitaxial layer, and located on two sides of the first trench, respectively. A first source region and a second source region both having the first conductivity type are disposed on the first body region and the second body region, respectively. A first electrode is disposed in the first trench. A source contact structure includes a first portion disposed in the first trench and is electrically connected to the first source region and the second source region. A first gate is disposed in the second trench.

Abstract: A semiconductor device includes a substrate having a first conductivity type and including a cell region and a termination region. A trench is disposed in the substrate and located in the cell region, and a gate electrode disposed in the trench. A shielding doped region having a second conductivity type is disposed in the substrate and directly below the trench. A buried guard ring having the second conductivity type is disposed in the substrate and located in the termination region. The buried guard ring and the shielding doped region are disposed at the same depth in the substrate. In addition, a junction termination extension structure having the second conductivity type is disposed in the substrate, located directly above and separated from the buried guard ring.

Abstract: A semiconductor device includes a trench in a substrate, a gate electrode in the trench, a source contact region on a first surface of the substrate, a drain contact region on a second surface of the substrate, a heavily doped region directly below the trench, and a current spreading layer in the substrate to surround the bottom of the trench and the heavily doped region. The heavily doped region has a first conductivity type, and the width of the heavily doped region is smaller than the width of the trench in a first direction. The current spreading layer has a second conductivity type and a gradual doping concentration that is gradually increased along the first direction from the heavily doped region to the outside of the current spreading layer.

Abstract: A semiconductor structure including a substrate, an epitaxy layer, an electrode structure, a first sidewall doping region, a second sidewall doping region, and a bottom doping region is provided. The substrate has a first conductivity type. The epitaxy layer has a first conductivity type and is disposed on the substrate. The electrode structure is disposed in the epitaxy layer. The electrode structure extends along a first direction. The first sidewall doping region has the first conductivity type and is disposed on one side of the electrode structure. The second sidewall doping region has a second conductivity type different than the first conductivity type and is disposed on the other side of the electrode structure. The bottom doping region has the second conductivity type and is disposed under the electrode structure. The second sidewall doping region is connected to the bottom doping region.

Abstract: A storage device includes a controller and a memory. A method of storage space management for the storage device is executed to perform steps as below. The controller calculates an expectedly used capacity and an effective capacity of the memory. The controller determines whether blocks of the memory include one or more blocks that are non-bad blocks and are prohibited from reading/writing. When the one or more blocks are determined to be non-bad blocks and to be prohibited from reading/writing, the controller marks each of the one or more blocks as a restricted block other than a bad block, thereby maintaining the effective capacity to be unchanged. The controller compares difference of the effective capacity and a total capacity of the one or more blocks that are marked as the restricted block to the expectedly used capacity to determine whether to prohibit programming to the memory.

Abstract: A semiconductor device includes a substrate having a first conductivity type, an epitaxial layer formed on the substrate, a well region extending from a top surface of the epitaxial layer into the epitaxial layer, a drift region formed in the epitaxial layer and in contact with the bottom surface of the well region, a gate structure and a conductive structure. The epitaxial layer has the first conductivity type, the well region has the second conductivity type, and the drift region has the first conductivity type. The gate structure that extends from the top surface of the epitaxial layer penetrates the well region and is in contact with the drift region. The conductive structure is formed in the drift region and disposed below the gate structure. A gate electrode of the gate structure is separated from the underlying conductive structure by the gate dielectric layer of the gate structure.

Abstract: A semiconductor device includes a substrate, an epitaxial layer on the substrate, a well region in the epitaxial layer, an insulating pillar extending into the epitaxial layer, a first doping region in the epitaxial layer and surrounding the insulating pillar, a second doping region under the first doping region, and a gate structure formed at one lateral side of the insulating pillar and extending into the epitaxial layer. The substrate and the epitaxial layer each have a first conductivity type. The well region and the first and second doping regions each have a second conductivity type. The gate structure is separated from the insulating pillar. The insulating pillar penetrates the first doping region by extending from the top portion to the bottom portion of the first doping region. The first doping region is electrically connected to the well region.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, an epitaxy layer, a well region, a gate electrode, a conductive structure, and a source electrode. The substrate has a first conductive type. The epitaxy layer has the first conductive type and is disposed on the substrate. The well region has a second conductive type. The second conductive type is different than the first conductive type. The well region is disposed in the epitaxy layer. The gate electrode is disposed on the well region. The conductive structure includes an upper portion and a lower portion. The lower portion extends in the direction of the substrate into the epitaxy layer and the upper portion is disposed on the epitaxy layer. The source electrode is disposed on the conductive structure.

Abstract: A method of storage space management for a storage device comprising a controller and a memory, comprising: calculating, by the controller, an expectedly used capacity and an effective capacity of the memory, wherein the effective capacity has a negative correlation with a number of blocks marked as bad blocks among a plurality of blocks of the memory; when the effective capacity is less than or equal to the declared capacity, and a difference between the effective capacity and the expectedly used capacity is less than a predetermined threshold capacity, prohibiting, by the controller, programming to the memory; and when the effective capacity is less than or equal to the declared capacity and the difference of the effective capacity and the expectedly used capacity is not less than the predetermined threshold capacity, permitting, by the controller, programming to the memory.

Abstract: A pixel package is provided. The pixel package includes a flexible redistribution layer and a plurality of LED chips arranged on the surface of the flexible redistribution layer in a flip-chip manner. The pixel package also includes a plurality of light-adjusting layers respectively disposed on the LED chips. The pixel package further includes a plurality of flexible composite laminates disposed on the surface of the flexible redistribution layer and between the LED chips.

Abstract: A light emitting device includes an LED die and a wavelength conversion layer. The LED die has a light emitting top surface and light emitting side surfaces. The wavelength conversion layer contains quantum dots and a photosensitive material, and is located on the light emitting top surface. A light emitting module including multiple light emitting devices is also disclosed.

Abstract: A picking apparatus is configured to pick up a plurality of micro elements. The picking apparatus includes an elastic plate, a substrate, a temperature-controlled adhesive layer, at least one heating element and a power source. The elastic plate has a first surface and a second surface opposite to each other. The substrate is disposed on the first surface. The temperature-controlled adhesive layer is disposed on the second surface and configured to adhere the micro elements. The heating element is disposed between the second surface and the temperature-controlled adhesive layer. The power source is electrically connected with the heating element. A viscosity of the temperature-controlled adhesive layer varies with a temperature of the temperature-controlled adhesive layer.

Abstract: A display device includes a substrate, a plurality of white light-emitting units, and a color filter layer. The white light-emitting units are arranged on the substrate at intervals, and the white light-emitting units are chip scale package (CSP). The color filter layer is above the white light-emitting units. Each of the white light-emitting units includes a light-emitting diode chip and a wavelength conversion film. The wavelength conversion film directly covers a top surface and side surfaces of the light-emitting diode chip, and the wavelength conversion film converts light emitted by the light-emitting diode chip into white light.

Abstract: A picking apparatus is configured to pick up a plurality of micro elements. The picking apparatus includes a main body and a plurality of picking portions. The picking portions connect with and protrude from the main body. Each of the picking portions has a first surface. The first surfaces are away from the main body and configured to pick up the micro elements. The main body has a second surface at least partially located between the picking portions. Each of the first surfaces has a first viscosity. The second surface has a second viscosity. The second viscosity is less than the first viscosity.

Abstract: A display device includes a substrate, a plurality of white light-emitting units, and a color filter layer. The white light-emitting units are arranged on the substrate at intervals, and the white light-emitting units are chip scale package (CSP). The color filter layer is above the white light-emitting units. Each of the white light-emitting units includes a light-emitting diode chip and a wavelength conversion film. The wavelength conversion film directly covers a top surface and side surfaces of the light-emitting diode chip, and the wavelength conversion film converts light emitted by the light-emitting diode chip into white light.

Abstract: A light-emitting package structure includes a light transmissive adhesive layer, a substrate, and at least one light-emitting diode chip. The light transmissive adhesive layer includes a first surface and a second surface facing away from the first surface. The substrate is on the first surface of the light transmissive adhesive layer. The light-emitting diode chip is on the second surface of the light transmissive adhesive layer. The light transmissive adhesive layer has a first portion and a second portion on the second surface, the first portion surrounds the second portion, a vertical projection area of the second portion on the substrate at least entirely covers a vertical projection area of the light-emitting diode chip on the substrate, and a thickness of the second portion is smaller than or equal to a thickness of the first portion.

Abstract: A low blue light backlight module configured to emit a white light is provided. The low blue light backlight module includes a first light-emitting element, a second light-emitting element, a third light-emitting element and a fourth light-emitting element. The first light-emitting element is configured to emit a first light having a peak emission wavelength of about 610-660 nm. The second light-emitting element is configured to emit a second light having a peak emission wavelength of about 520-550 nm. The third light-emitting element is configured to emit a third light having a peak emission wavelength of about 480-580 nm. The fourth light-emitting element is configured to emit a fourth light having a peak emission wavelength of about 445-470 nm. The white light has an emission spectrum, and an area ratio of the spectrum under wavelength of 415-455 nm to the spectrum under wavelength of 400-500 nm is below 50%.

Abstract: A light emitting device includes an LED die and a wavelength conversion layer. The LED die has a light emitting top surface and light emitting side surfaces. The wavelength conversion layer contains quantum dots and a photosensitive material, and is located on the light emitting top surface. A light emitting module including multiple light emitting devices is also disclosed.

Abstract: A data processing method includes: configuring a predetermined memory space to record information regarding valid data of a memory device, where the information is used to indicate data associated to which logical memory spaces of the memory device is valid; and updating the information according to commands received from a host device.

Abstract: A method of storage space management for a storage device comprising a controller and a memory, comprising: calculating, by the controller, an expectedly used capacity and an effective capacity of the memory, wherein the effective capacity has a negative correlation with a number of blocks marked as bad blocks among a plurality of blocks of the memory; when the effective capacity is less than or equal to the declared capacity, and a difference between the effective capacity and the expectedly used capacity is less than a predetermined threshold capacity, prohibiting, by the controller, programming to the memory; and when the effective capacity is less than or equal to the declared capacity and the difference of the effective capacity and the expectedly used capacity is not less than the predetermined threshold capacity, permitting, by the controller, programming to the memory.