Patents by Inventor Fu-Huan TSAI
Fu-Huan TSAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240088224Abstract: A semiconductor structure includes a first gate structure, a second gate structure coupled to the first gate structure, a source region, a first drain region, and a second drain region. The source region is surrounded by the first gate structure and the second gate structure. The first drain region is separated from the source region by the first gate structure. The second drain region is separated from the source region by the second gat structure. A shape of the first drain region and a shape of the second drain region are different from each other from a plan view.Type: ApplicationFiled: November 14, 2023Publication date: March 14, 2024Inventors: HSING-I TSAI, FU-HUAN TSAI, CHIA-CHUNG CHEN, HSIAO-CHUN LEE, CHI-FENG HUANG, CHO-YING LU, VICTOR CHIANG LIANG
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Patent number: 11855145Abstract: A semiconductor structure includes a gate structure, a source region, a drain region, and an isolation structure. The gate structure includes a first portion, a second portion and a third portion. The first portion extends in a first direction, and the second portion and the third portion extend in a second direction. The second portion and the third portion are disposed at opposite ends of the first portion. The source region and the drain region are separated by the gate structure. The isolation structure surrounds the gate structure, the source region and the drain region. The first portion has a first sidewall, the second portion has a second sidewall, and the third portion has a third sidewall. The first sidewall, the second sidewall and the third sidewall are parallel to the first direction and aligned with each other to form a straight line.Type: GrantFiled: August 31, 2021Date of Patent: December 26, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Hsing-I Tsai, Fu-Huan Tsai, Chia-Chung Chen, Hsiao-Chun Lee, Chi-Feng Huang, Cho-Ying Lu, Victor Chiang Liang
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Publication number: 20230387856Abstract: A method for manufacturing a semiconductor device including an upper-channel implant transistor is provided. The method includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is shallowly implanted in an upper portion of the first region of the fins but not in the second regions and not in a lower portion of the first region of the fins. A gate structure extending in a second direction perpendicular to the first direction is formed overlying the first region of the fins, and source/drains are formed overlying the second regions of the fins, thereby forming an upper-channel implant transistor.Type: ApplicationFiled: July 27, 2023Publication date: November 30, 2023Inventors: Chia-Chung CHEN, Chi-Feng HUANG, Victor Chiang LIANG, Fu-Huan TSAI, Hsieh-Hung HSIEH, Tzu-Jin YEH, Han-Min TSAI, Hong-Lin CHU
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Patent number: 11830889Abstract: A low noise device includes an isolation feature in a substrate. The low noise device further includes a gate stack over a channel in the substrate, wherein the isolation feature is adjacent to the channel. The low noise device further includes a spacer surrounding a portion of the gate stack, wherein an edge of the gate stack is spaced from an edge of the isolation feature adjacent to the spacer by a distance ranging from a minimum spacing distance to about 0.3 microns (?m).Type: GrantFiled: July 23, 2021Date of Patent: November 28, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Victor Chiang Liang, Fu-Huan Tsai, Chi-Feng Huang, Yu-Lin Wei, Fang-Ting Kuo, Meng-Chang Ho
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Patent number: 11791773Abstract: A method for manufacturing a semiconductor device including an upper-channel implant transistor is provided. The method includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is shallowly implanted in an upper portion of the first region of the fins but not in the second regions and not in a lower portion of the first region of the fins. A gate structure extending in a second direction perpendicular to the first direction is formed overlying the first region of the fins, and source/drains are formed overlying the second regions of the fins, thereby forming an upper-channel implant transistor.Type: GrantFiled: July 12, 2021Date of Patent: October 17, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chia-Chung Chen, Chi-Feng Huang, Victor Chiang Liang, Fu-Huan Tsai, Hsieh-Hung Hsieh, Tzu-Jin Yeh, Han-Min Tsai, Hong-Lin Chu
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Publication number: 20230215916Abstract: In an embodiment, an integrated circuit (IC) device comprises a semiconductor substrate, an isolation region and an active region disposed on the semiconductor substrate, a gate stack disposed over the active region, and a source and a drain disposed in the active region and interposed by the gate stack in a first direction. The active region is at least partially surrounded by the isolation region. A middle portion of the active region laterally extends beyond the gate stack in a second direction that is perpendicular to the first direction.Type: ApplicationFiled: March 13, 2023Publication date: July 6, 2023Inventors: Ching-Hung Kao, Chi-Feng Huang, Fu-Huan Tsai, Victor Chiang Liang
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Patent number: 11646312Abstract: A method for manufacturing a semiconductor device includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is implanted in the first region of the fins but not in the second regions. A gate structure overlies the first region of the fins and source/drains are formed on the second regions of the fins.Type: GrantFiled: August 16, 2021Date of Patent: May 9, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chia-Chung Chen, Chi-Feng Huang, Victor Chiang Liang, Fu-Huan Tsai, Hsieh-Hung Hsieh, Tzu-Jin Yeh, Han-Min Tsai, Hong-Lin Chu
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Patent number: 11605709Abstract: In an embodiment, an integrated circuit (IC) device comprises a semiconductor substrate, an isolation region and an active region disposed on the semiconductor substrate, a gate stack disposed over the active region, and a source and a drain disposed in the active region and interposed by the gate stack in a first direction. The active region is at least partially surrounded by the isolation region. A middle portion of the active region laterally extends beyond the gate stack in a second direction that is perpendicular to the first direction.Type: GrantFiled: December 14, 2020Date of Patent: March 14, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ching-Hung Kao, Chi-Feng Huang, Fu-Huan Tsai, Victor Chiang Liang
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Publication number: 20230067210Abstract: A semiconductor structure includes a gate structure, a source region, a drain region, and an isolation structure. The gate structure includes a first portion, a second portion and a third portion. The first portion extends in a first direction, and the second portion and the third portion extend in a second direction. The second portion and the third portion are disposed at opposite ends of the first portion. The source region and the drain region are separated by the gate structure. The isolation structure surrounds the gate structure, the source region and the drain region. The first portion has a first sidewall, the second portion has a second sidewall, and the third portion has a third sidewall. The first sidewall, the second sidewall and the third sidewall are parallel to the first direction and aligned with each other to form a straight line.Type: ApplicationFiled: August 31, 2021Publication date: March 2, 2023Inventors: HSING-I TSAI, FU-HUAN TSAI, CHIA-CHUNG CHEN, HSIAO-CHUN LEE, CHI-FENG HUANG, CHO-YING LU, VICTOR CHIANG LIANG
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Patent number: 11552076Abstract: A method of fabricating a semiconductor device includes forming a gate structure, a first edge structure and a second edge structure on a semiconductor strip. The method further includes forming a first source/drain feature between the gate structure and the first edge structure. The method further includes forming a second source/drain feature between the gate structure and the second edge structure, wherein a distance between the gate structure and the first source/drain feature is different from a distance between the gate structure and the second source/drain feature. The method further includes implanting a buried channel in the semiconductor strip, wherein the buried channel is entirely below a top-most surface of the semiconductor strip, a maximum depth of the buried channel is less than a maximum depth of the first source/drain feature, and a dopant concentration of the buried channel is highest under the gate structure.Type: GrantFiled: July 24, 2020Date of Patent: January 10, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shu Fang Fu, Chi-Feng Huang, Chia-Chung Chen, Victor Chiang Liang, Fu-Huan Tsai
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Patent number: 11532614Abstract: FinFET varactors having low threshold voltages and methods of making the same are disclosed herein. An exemplary FinFET varactor includes a fin and a gate structure disposed over a portion of the fin, such that the gate structure is disposed between a first source/drain feature and a second source/drain feature that include a first type dopant. The portion of the fin includes the first type dopant and a second type dopant. A dopant concentration of the first type dopant and a dopant concentration of the second type dopant vary from an interface between the fin and the gate structure to a first depth in the fin. The dopant concentration of the first type dopant is greater than the dopant concentration of the second type dopant from a second depth to a third depth in the fin, where the second depth and the third depth are less than the first depth.Type: GrantFiled: April 22, 2021Date of Patent: December 20, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Fu-Huan Tsai, Han-Min Tsai, Chia-Chung Chen, Chi-Feng Huang, Victor Chiang Liang
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Publication number: 20210375862Abstract: A method for manufacturing a semiconductor device includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is implanted in the first region of the fins but not in the second regions. A gate structure overlies the first region of the fins and source/drains are formed on the second regions of the fins.Type: ApplicationFiled: August 16, 2021Publication date: December 2, 2021Inventors: Chia-Chung CHEN, Chi-Feng HUANG, Victor Chiang LIANG, Fu-Huan TSAI, Hsieh-Hung HSIEH, Tzu-Jin YEH, Han-Min TSAI, Hong-Lin CHU
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Publication number: 20210351210Abstract: A low noise device includes an isolation feature in a substrate. The low noise device further includes a gate stack over a channel in the substrate, wherein the isolation feature is adjacent to the channel. The low noise device further includes a spacer surrounding a portion of the gate stack, wherein an edge of the gate stack is spaced from an edge of the isolation feature adjacent to the spacer by a distance ranging from a minimum spacing distance to about 0.3 microns (?m).Type: ApplicationFiled: July 23, 2021Publication date: November 11, 2021Inventors: Victor Chiang LIANG, Fu-Huan TSAI, Chi-Feng HUANG, Yu-Lin WEI, Fang-Ting KUO, Meng-Chang HO
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Publication number: 20210344303Abstract: A method for manufacturing a semiconductor device including an upper-channel implant transistor is provided. The method includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is shallowly implanted in an upper portion of the first region of the fins but not in the second regions and not in a lower portion of the first region of the fins. A gate structure extending in a second direction perpendicular to the first direction is formed overlying the first region of the fins, and source/drains are formed overlying the second regions of the fins, thereby forming an upper-channel implant transistor.Type: ApplicationFiled: July 12, 2021Publication date: November 4, 2021Inventors: Chia-Chung CHEN, Chi-Feng HUANG, Victor Chiang LIANG, Fu-Huan TSAI, Hsieh-Hung HSIEH, Tzu-Jin YEH, Han-Min TSAI, Hong-Lin CHU
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Patent number: 11094694Abstract: A method for manufacturing a semiconductor device includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is implanted in the first region of the fins but not in the second regions. A gate structure overlies the first region of the fins and source/drains are formed on the second regions of the fins.Type: GrantFiled: December 31, 2019Date of Patent: August 17, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chia-Chung Chen, Chi-Feng Huang, Victor Chiang Liang, Fu-Huan Tsai, Hsieh-Hung Hsieh, Tzu-Jin Yeh, Han-Min Tsai, Hong-Lin Chu
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Patent number: 11094723Abstract: A semiconductor device includes a substrate and an isolation feature. The isolation feature includes a first portion in the substrate, and a second portion extending along a top surface of the substrate, wherein a bottom surface of the second portion is below the top surface of the substrate. The semiconductor device further includes a gate structure over the substrate, wherein the gate structure extends along a top surface of the second portion of the isolation feature.Type: GrantFiled: January 9, 2020Date of Patent: August 17, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Victor Chiang Liang, Fu-Huan Tsai, Fang-Ting Kuo, Meng-Chang Ho, Yu-Lin Wei, Chi-Feng Huang
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Patent number: 11088136Abstract: A semiconductor device and method of forming the same are provided. The semiconductor device includes a substrate, a growth promoting region, a first gate stack, and a second gate stack. The substrate includes a first region and a second region. The growth promoting region is located in a surface of the substrate in the first region. The growth promoting region includes a first implantation species, and a surface of the substrate in the second region is free of the first implantation species. The first gate stack includes a first gate dielectric layer on the substrate in the first region. The second gate stack includes a second gate dielectric layer on the substrate in the second region.Type: GrantFiled: February 25, 2020Date of Patent: August 10, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Victor Chiang Liang, Chi-Feng Huang, Chia-Chung Chen, Chun-Pei Wu, Fu-Huan Tsai, Chung-Hao Chu, Chin-Nan Chang, Ching-Yu Yang, Ankush Chaudhary
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Publication number: 20210242197Abstract: FinFET varactors having low threshold voltages and methods of making the same are disclosed herein. An exemplary FinFET varactor includes a fin and a gate structure disposed over a portion of the fin, such that the gate structure is disposed between a first source/drain feature and a second source/drain feature that include a first type dopant. The portion of the fin includes the first type dopant and a second type dopant. A dopant concentration of the first type dopant and a dopant concentration of the second type dopant vary from an interface between the fin and the gate structure to a first depth in the fin. The dopant concentration of the first type dopant is greater than the dopant concentration of the second type dopant from a second depth to a third depth in the fin, where the second depth and the third depth are less than the first depth.Type: ApplicationFiled: April 22, 2021Publication date: August 5, 2021Inventors: Fu-Huan Tsai, Han-Min Tsai, Chia-Chung Chen, Chi-Feng Huang, Victor Chiang Liang
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Patent number: 11063559Abstract: A method for manufacturing a semiconductor device including an upper-channel implant transistor is provided. The method includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is shallowly implanted in an upper portion of the first region of the fins but not in the second regions and not in a lower portion of the first region of the fins. A gate structure extending in a second direction perpendicular to the first direction is formed overlying the first region of the fins, and source/drains are formed overlying the second regions of the fins, thereby forming an upper-channel implant transistor.Type: GrantFiled: June 5, 2015Date of Patent: July 13, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chia-Chung Chen, Chi-Feng Huang, Victor Chiang Liang, Fu-Huan Tsai, Hsieh-Hung Hsieh, Tzu-Jin Yeh, Han-Min Tsai, Hong-Lin Chu
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Patent number: 11011556Abstract: A method of making a semiconductor device includes etching a substrate to define a trench in a substrate, wherein the trench is adjacent to an active region in the substrate, and etching the substrate includes patterning a mask. The method further includes partially removing the mask to expose a first portion of the active region, wherein the first portion extends a first distance from the trench. The method further includes depositing a dielectric material to fill the trench and cover the first portion of the active region. The method further includes removing the mask, wherein the removing of the mask includes maintaining the dielectric material covering the first portion of the active region. The method further includes forming a gate structure over the active region and over the dielectric material.Type: GrantFiled: January 9, 2020Date of Patent: May 18, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Victor Chiang Liang, Fu-Huan Tsai, Fang-Ting Kuo, Meng-Chang Ho, Yu-Lin Wei, Chi-Feng Huang