Abstract: A battery pack includes a battery seat and a lock assembly. The lock assembly has a button disposed in the battery seat and has two opposite first inclined surfaces, and two lock members disposed in the battery seat and located at two opposite sides of the button. The lock members each have a second inclined surface abutted against the first inclined surface of the button, such that the lock members are pushed closer to each other by the button to move from a lock position to an unlock position, thus unlocking the battery pack from an electronic device. Thus, the present invention allows a user to hold the battery seat by one hand and operate the button by an index finger of the same hand for achieving an unlocking effect. Further, the present invention provides a method of disassembling the battery pack from the electronic device.

Abstract: A lift detection mechanism of a mowing robot includes a wheel set, a movable member, a transmitter, and a receiver. The wheel set has an axle rotatably and movably penetrated into a fixed seat, a wheel connected to the axle and located outside of the fixed seat, and a fixing member disposed to the axle and located in the fixed seat. The movable member is disposed to the axle and located in the fixed seat. One of the transmitter and the receiver is disposed to the movable member, and the other of the transmitter and the receiver is disposed to the fixed seat. As such, when the mowing robot is lifted by a user, the movable member is driven by an elastic member to move downwards until the transmitter and the receiver are staggered. As such, blades are controlled to stop working for preventing the user from being cut.

Abstract: A visual identification positioning system includes a first positioning member, a second positioning member, and a mowing robot. The mowing robot has a visual identification unit and a computation unit. The visual identification unit identifies a first identification feature of the first positioning member and a second identification feature of the second positioning member to generate first and second signals to the computation unit. The computation unit computes a first coordinate, a second coordinate, a first distance between the mowing robot and the first coordinate, and a second distance between the mowing robot and the second coordinate according to the first and second signals, and defines first and second ranges with the first and second coordinates as centers according to the first and second distances, and computes a coordinate of an intersection of the first and second ranges as a current location coordinate of the mowing robot.

Abstract: A mowing system includes a charging station, a base station, and a mowing robot. The base station and the charging station are set independently from each other. The base station has a first communication unit and a first GPS antenna. The mowing robot has a second GPS antenna and a control unit electrically connected with the second GPS antenna and wirelessly connected with the first GPS antenna, such that the control unit receives a first GPS signal obtained by the first GPS antenna and a second GPS signal obtained by the second GPS antenna and determines a positioning coordinate of the mower robot according to the first GPS signal and the second GPS signal. As such, the installation position of the base station is not restricted by the surrounding environment or the charging station so as to enhance positioning precision.

Abstract: A GPS positioning stake includes a supporting pole, a base connected with the supporting pole and having a GPS positioning module and a rotation axle, an adjustment board having an axle sleeving portion pivotably connected with the rotation axle and a solar panel providing electric energy for the operation of the GPS positioning module, and an angle adjusting device including a first gear fixedly sleeved onto the rotation axle, a second gear sleeved onto the rotation axle and located in the axle sleeving portion, an elastic member, and an operation member. The first and second gears engage when the operation member locks, disabling the adjustment board from rotation relative to the rotation axle, and separate when the operation member unlocks, enabling the adjustment board to drive the second gear to rotate relative to the rotation axle for adjusting the solar panel's light receiving angle for better energy conversion efficiency.

Abstract: A semiconductor device includes a substrate having a channel region; a gate stack over the channel region; a seal spacer covering a sidewall of the gate stack, the seal spacer including silicon nitride; a gate spacer covering a sidewall of the seal spacer, the gate spacer including silicon oxide, the gate spacer having a first vertical portion and a first horizontal portion; and a first dielectric layer covering a sidewall of the gate spacer, the first dielectric layer including silicon nitride.

Abstract: A head of a tag device having a body, at least one row of negative-pressure through holes and at least one row of positive-pressure through holes. The body has a first surface and a second surface. The rows of negative and positive-pressure through holes are formed through the first and second surfaces of the body and arranged along a long-axis direction. Two negative and positive-pressure through holes at both ends of the corresponding row of negative and positive-pressure through holes are respectively close to the short sides of the body. Therefore, an effective labeling area is distributed between two short sides. The head of the tag device of the present invention provides a stable labeling operation for different products where different components are mounted and increases units per hour (UPH).

Abstract: A manual labeling device is disclosed. The manual labeling device has a platform, a plurality of positioning elements and a pivoting device. The platform has a labeling area. The positioning elements are mounted on the platform and around the labeling area. The pivoting device is pivotally mounted on one side of the platform and has a pivot shaft and a pivot arm. The operator manually places one product in the labeling area of the platform and the product is fixed in the labeling area by the positioning elements. The operator only pivots the pivot arm and the pivot arm directly aligns with the labeling area. Therefore, it does not take times to align the tool and the labeling area before attaching the label and the label attaching task is simplified to increase the productivity and quality of labeling (units per hour; UPH).

Abstract: A head of a tag device having a body, at least one row of negative-pressure through holes and at least one row of positive-pressure through holes. The body has a first surface and a second surface. The rows of negative and positive-pressure through holes are formed through the first and second surfaces of the body and arranged along a long-axis direction. Two negative and positive-pressure through holes at both ends of the corresponding row of negative and positive-pressure through holes are respectively close to the short sides of the body. Therefore, an effective labeling area is distributed between two short sides. The head of the tag device of the present invention provides a stable labeling operation for different products where different components are mounted and increases units per hour (UPH).

Abstract: A semiconductor device includes a substrate having a channel region; a gate stack over the channel region; a seal spacer covering a sidewall of the gate stack, the seal spacer including silicon nitride; a gate spacer covering a sidewall of the seal spacer, the gate spacer including silicon oxide, the gate spacer having a first vertical portion and a first horizontal portion; and a first dielectric layer covering a sidewall of the gate spacer, the first dielectric layer including silicon nitride.

Abstract: A semiconductor device includes a substrate having a channel region; a gate stack over the channel region; a seal spacer covering a sidewall of the gate stack, the seal spacer including silicon nitride; a gate spacer covering a sidewall of the seal spacer, the gate spacer including silicon oxide, the gate spacer having a first vertical portion and a first horizontal portion; and a first dielectric layer covering a sidewall of the gate spacer, the first dielectric layer including silicon nitride.

Abstract: A semiconductor device includes a substrate having a channel region; a gate stack over the channel region; a seal spacer covering a sidewall of the gate stack, the seal spacer including silicon nitride; a gate spacer covering a sidewall of the seal spacer, the gate spacer including silicon oxide, the gate spacer having a first vertical portion and a first horizontal portion; and a first dielectric layer covering a sidewall of the gate spacer, the first dielectric layer including silicon nitride.

Abstract: A semiconductor device includes a substrate having a channel region; a gate stack over the channel region; a seal spacer covering a sidewall of the gate stack, the seal spacer including silicon nitride; a gate spacer covering a sidewall of the seal spacer, the gate spacer including silicon oxide, the gate spacer having a first vertical portion and a first horizontal portion; and a first dielectric layer covering a sidewall of the gate spacer, the first dielectric layer including silicon nitride.

Abstract: The present invention belongs to the field of semiconductor technology and relates to a polarization-doped enhancement mode HEMT device. The technical solution of the present invention grows the first barrier layer and the second barrier layer that contain gradient Al composition sequentially on the buffer layer. The gradient trends of the two layers are opposite. The three-dimensional electron gas (3DEG) and the three-dimensional hole gas (3DHG) are induced and generated in the barrier layers due to the inner polarization difference respectively. A trench insulated gate structure is at one side of the source which is away from the metal drain and is in contact with the source. First, since the highly concentrated electrons exist in the entire first barrier layer, the on-state current is improved greatly. Second, the vertical conductive channel between the source and the 3DEG are pinched off by the 3DHG, so as to realize the enhancement mode.

Abstract: A semiconductor device includes a substrate having a channel region; a gate stack over the channel region; a seal spacer covering a sidewall of the gate stack, the seal spacer including silicon nitride; a gate spacer covering a sidewall of the seal spacer, the gate spacer including silicon oxide, the gate spacer having a first vertical portion and a first horizontal portion; and a first dielectric layer covering a sidewall of the gate spacer, the first dielectric layer including silicon nitride.

Abstract: The present invention belongs to the field of semiconductor technology and relates to a polarization-doped enhancement mode HEMT device. The technical solution of the present invention grows the first barrier layer and the second barrier layer that contain gradient Al composition sequentially on the buffer layer. The gradient trends of the two layers are opposite. The three-dimensional electron gas (3DEG) and the three-dimensional hole gas (3DHG) are induced and generated in the barrier layers due to the inner polarization difference respectively. A trench insulated gate structure is at one side of the source which is away from the metal drain and is in contact with the source. First, since the highly concentrated electrons exist in the entire first barrier layer, the on-state current is improved greatly. Second, the vertical conductive channel between the source and the 3DEG are pinched off by the 3DHG, so as to realize the enhancement mode.

Abstract: A method of forming a transistor includes: forming a stack structure including a first conductive layer, a first insulating layer, a second conductive layer, and a second insulating layer on a substrate; patterning the first insulating layer, the second conductive layer, and the second insulating layer to form at least one opening passing through the first insulating layer, the second conductive layer, and the second insulating layer; forming a semiconductor layer over the second insulating layer and filling the opening; removing the portion of the semiconductor layer over the second insulating layer, in which the portion of the semiconductor layer filled in the opening constitutes at least one semiconductor channel; and forming a third conductive layer over the semiconductor channel.

Abstract: A method of forming a transistor includes: forming a stack structure including a first conductive layer, a first insulating layer, a second conductive layer, and a second insulating layer on a substrate; patterning the first insulating layer, the second conductive layer, and the second insulating layer to form at least one opening passing through the first insulating layer, the second conductive layer, and the second insulating layer; forming a semiconductor layer over the second insulating layer and filling the opening; removing the portion of the semiconductor layer over the second insulating layer, in which the portion of the semiconductor layer filled in the opening constitutes at least one semiconductor channel; and forming a third conductive layer over the semiconductor channel.

Abstract: An enhancement mode HEMT, including: a substrate layer; a buffer layer; barrier layers; drain electrodes; reverse polarization semiconductor layers; source electrodes; an insulated gate dielectric; and a metal gate electrode The buffer layer is disposed on the substrate layer, and the barrier layers are disposed on the buffer layer. Interfaces between the buffer layer and the barrier layers are provided with first heterojunctions having a two-dimensional electron gas (2DEG) channel. The drain electrodes are disposed at one end of the upper surfaces of the barrier layers and form Ohmic contact with the barrier layers. The reverse polarization semiconductor layers are disposed on the upper surfaces of the barrier layers and are able to produce inversed polarization with the barrier layers. The interfaces between reverse polarization semiconductor layers and barrier layers are provided with second heterojunctions having two-dimensional hole gas (2DHG).

Abstract: A convertible tandem stroller frame is capable of locking in a tandem stroller mode for installing a second seat thereby concurrently transporting two occupants, and capable of converting said mode into a single seat mode for transporting single occupant by simply manipulating a release actuator at a front portion of the convertible tandem stroller frame. The convertible tandem stroller frame may include a front rack, a rear rack, at least a longitudinal telescopic mechanism and at least a locking mechanism. The front rack and the rear rack are lockably and adjustably connected by the longitudinal telescopic mechanism, so as to be extended into the tandem stroller mode and be retracted into the single seat mode. The locking mechanism is associated with the release actuator for locking and un-locking the longitudinal telescopic mechanism by manipulating in front of the convertible tandem stroller frame.