Abstract: The present invention belongs to the field of semiconductor technology and relates to a polarization-doped enhancement mode HEMT device. The technical solution of the present invention grows the first barrier layer and the second barrier layer that contain gradient Al composition sequentially on the buffer layer. The gradient trends of the two layers are opposite. The three-dimensional electron gas (3DEG) and the three-dimensional hole gas (3DHG) are induced and generated in the barrier layers due to the inner polarization difference respectively. A trench insulated gate structure is at one side of the source which is away from the metal drain and is in contact with the source. First, since the highly concentrated electrons exist in the entire first barrier layer, the on-state current is improved greatly. Second, the vertical conductive channel between the source and the 3DEG are pinched off by the 3DHG, so as to realize the enhancement mode.

Abstract: The present invention belongs to the field of semiconductor technology and relates to a polarization-doped enhancement mode HEMT device. The technical solution of the present invention grows the first barrier layer and the second barrier layer that contain gradient Al composition sequentially on the buffer layer. The gradient trends of the two layers are opposite. The three-dimensional electron gas (3DEG) and the three-dimensional hole gas (3DHG) are induced and generated in the barrier layers due to the inner polarization difference respectively. A trench insulated gate structure is at one side of the source which is away from the metal drain and is in contact with the source. First, since the highly concentrated electrons exist in the entire first barrier layer, the on-state current is improved greatly. Second, the vertical conductive channel between the source and the 3DEG are pinched off by the 3DHG, so as to realize the enhancement mode.

Abstract: An enhancement mode HEMT, including: a substrate layer; a buffer layer; barrier layers; drain electrodes; reverse polarization semiconductor layers; source electrodes; an insulated gate dielectric; and a metal gate electrode The buffer layer is disposed on the substrate layer, and the barrier layers are disposed on the buffer layer. Interfaces between the buffer layer and the barrier layers are provided with first heterojunctions having a two-dimensional electron gas (2DEG) channel. The drain electrodes are disposed at one end of the upper surfaces of the barrier layers and form Ohmic contact with the barrier layers. The reverse polarization semiconductor layers are disposed on the upper surfaces of the barrier layers and are able to produce inversed polarization with the barrier layers. The interfaces between reverse polarization semiconductor layers and barrier layers are provided with second heterojunctions having two-dimensional hole gas (2DHG).

Abstract: A memory device including graphical content and a method of making the memory device with graphical content are disclosed. The graphical content is formed on a release media. The release media and the unencapsulated memory device are placed in a mold and encapsulated. During the encapsulation and curing of the molding compound, the graphical content is transferred from the release media to the encapsulated memory device.

Abstract: A tubular door lock includes a dead bolt and a follower slidably received in a housing and coupled together. The follower included a groove formed between two levers, two actuators are rotatably received in the housing and each includes one or more actuating fingers engageable with the levers of the follower, for selectively actuating the levers of the follower to move the dead bolt relative to the housing, when the actuators are rotated relative to the housing. The provision of the actuators in different positions relative to the housing allows the lock device or the knob to engage with either of actuators, for allowing the lock device and the knob to be secured into the door panel at different positions.