Abstract: A microlens structure is provided. The microlens structure includes a microlens element having a first refraction index. A first film is disposed on the microlens element, wherein the first film has a second refraction index less than the first refraction index. A second film is disposed on the first film, wherein the second film has a third refraction index less than the second refraction index and greater than a refraction index of air. Further, a fabrication method of the microlens structure is also provided.

Abstract: An exemplary wafer level package comprises a semiconductor wafer with a plurality of semiconductor chips of perfect polygonal shapes thereon. A circuit-free area is defined over the semiconductor wafer to electrically isolate the semiconductor chips. A dam structure is substantially formed over the circuit-free area, wherein a portion of the dam structure formed around an edge of the semiconductor wafer is formed with a plurality via holes therein. A transparent substrate is formed over the semiconductor wafer, defining a plurality of cavities between the semiconductor chips and the transparent substrate, wherein the transparent substrate is supported by the dam structure.

Abstract: A method for fabricating a color filter structure includes: providing a base layer; forming a first colored layer on the base layer; patterning the first colored layer to form a pair of first colored patterns, a first opening between the first colored patterns, and a second opening adjacent to the first colored patterns; forming a first dielectric layer on the first colored patterns and the base layer exposed by the first and second openings; forming a second colored layer on the first colored patterns and the first dielectric layer; patterning the second colored layer to form a second colored pattern in the first opening; forming a second dielectric layer on the first dielectric layer and the second colored pattern; forming a third colored layer on the second dielectric layer; and patterning the third colored layer to form a third colored pattern in the second opening.

Abstract: A method for fabricating a color filter structure includes: providing a base layer; forming a first colored layer on the base layer; patterning the first colored layer to form a pair of first colored patterns, a first opening between the first colored patterns, and a second opening adjacent to the first colored patterns; forming a first dielectric layer on the first colored patterns and the base layer exposed by the first and second openings; forming a second colored layer on the first colored patterns and the first dielectric layer; patterning the second colored layer to form a second colored pattern in the first opening; forming a second dielectric layer on the first dielectric layer and the second colored pattern; forming a third colored layer on the second dielectric layer; and patterning the third colored layer to form a third colored pattern in the second opening.

Abstract: A microlens structure is provided. The microlens structure includes a microlens element having a first refraction index. A first film is disposed on the microlens element, wherein the first film has a second refraction index less than the first refraction index. A second film is disposed on the first film, wherein the second film has a third refraction index less than the second refraction index and greater than a refraction index of air. Further, a fabrication method of the microlens structure is also provided.

Abstract: A method is provided for processing a substrate. The substrate has at least one filter region, a plurality of bond pads, and a plurality of scribe lines arranged around the filter region and bond pads. A first planarization layer is formed above the substrate. The planarization layer has a substantially flat top surface overlying the filter region, the bond pads and the scribe lines. At least one color resist layer is formed over the first planarization layer and within the filter region while the first planarization layer covers the bond pads and the scribe lines.

Abstract: A microlens structure and a method of fabrication thereof are provided. The method comprises forming a layer of microlens material over a substrate, which has photo-sensitive elements formed therein. The microlens material, which comprises a photo-resist material, is exposed in accordance with a desired pattern a plurality of times. The energy used with each exposure process is less than the energy required if a single exposure is used. Furthermore, the masks used for each exposure may differ. In an embodiment, the masks are varied so as to create a notch in the upper corner of the microlens. The microlens structure may have a height less than about 0.5 um and/or a gap between microlenses less than about 0.2 um. In an embodiment, one or more dielectric layers having a combined thickness greater than about 3.5 um are interposed between the photo-sensitive elements and the microlenses.

Abstract: A microlens structure and a method of fabrication thereof are provided. The method comprises forming a layer of microlens material over a substrate, which has photo-sensitive elements formed therein. The microlens material, which comprises a photo-resist material, is exposed in accordance with a desired pattern a plurality of times. The energy used with each exposure process is less than the energy required if a single exposure is used. Furthermore, the masks used for each exposure may differ. In an embodiment, the masks are varied so as to create a notch in the upper corner of the microlens.

Abstract: A method is provided for processing a substrate. The substrate has at least one filter region, a plurality of bond pads, and a plurality of scribe lines arranged around the filter region and bond pads. A first planarization layer is formed above the substrate. The planarization layer has a substantially flat top surface overlying the filter region, the bond pads and the scribe lines. At least one color resist layer is formed over the first planarization layer and within the filter region while the first planarization layer covers the bond pads and the scribe lines.

Abstract: An exemplary wafer level package comprises a semiconductor wafer with a plurality of semiconductor chips of perfect polygonal shapes thereon. A circuit-free area is defined over the semiconductor wafer to electrically isolate the semiconductor chips. A dam structure is substantially formed over the circuit-free area, wherein a portion of the dam structure formed around an edge of the semiconductor wafer is formed with a plurality via holes therein. A transparent substrate is formed over the semiconductor wafer, defining a plurality of cavities between the semiconductor chips and the transparent substrate, wherein the transparent substrate is supported by the dam structure.

Abstract: A method is provided for processing a substrate. The substrate has at least one filter region, a plurality of bond pads, and a plurality of scribe lines arranged around the filter region and bond pads. A first planarization layer is formed above the substrate. The planarization layer has a substantially flat top surface overlying the filter region, the bond pads and the scribe lines. At least one color resist layer is formed over the first planarization layer and within the filter region while the first planarization layer covers the bond pads and the scribe lines.

Abstract: A method of manufacturing a microlens device by depositing a microlens material layer over a substrate that includes photo-sensors. The microlens material layer is then exposed and developed to define microlens material elements, including first microlens material elements and second microlens material elements. Each second microlens material element is substantially greater in thickness relative to each first microlens material element. The microlens material elements are then heated to form a microlens array that includes first microlens array elements, each corresponding to a first microlens material element, and second microlens array elements, each corresponding to a second microlens material element. Each first microlens array element has a substantially greater focal length relative to each second microlens array element. For example, each second microlens array element is substantially greater in thickness relative to each first microlens array element.

Abstract: An image sensor device and method for forming said device are described. The image sensor structure comprises a substrate with photodiodes, an interconnect structure formed on the substrate, a color filter layer above the interconnect structure, a first microlens array, an overcoat layer, and a second microlens array. A key feature is that a second microlens has a larger radius of curvature than a first microlens. Additionally, each first microlens and second microlens is a flat convex lens. Thus, a thicker second microlens with a short focal length is aligned above a thinner first microlens having a long focal length. A light column that includes a first microlens, a second microlens and a color filter region is formed above each photodiode. A second embodiment involves replacing a second microlens in each light column with a plurality of smaller second microlenses that focus light onto a first microlens.

Abstract: A method of manufacturing a microlens device by depositing a microlens material layer over a substrate that includes photo-sensors. The microlens material layer is then exposed and developed to define microlens material elements, including first microlens material elements and second microlens material elements. Each second microlens material element is substantially greater in thickness relative to each first microlens material element. The microlens material elements are then heated to form a microlens array that includes first microlens array elements, each corresponding to a first microlens material element, and second microlens array elements, each corresponding to a second microlens material element. Each first microlens array element has a substantially greater focal length relative to each second microlens array element. For example, each second microlens array element is substantially greater in thickness relative to each first microlens array element.

Abstract: A method of manufacturing a plurality of microlenses on a substrate comprises forming a grid having raised ridges defining a plurality of openings on the substrate and forming a plurality of patterned photoresist features each disposed within one of the plurality of openings. The plurality of patterned photoresist features can then be reflowed inside the grid.

Abstract: A method of manufacturing a plurality of microlenses on a substrate comprises forming a grid having raised ridges defining a plurality of openings on the substrate and forming a plurality of patterned photoresist features each disposed within one of the plurality of openings. The plurality of patterned photoresist features can then be reflowed inside the grid.

Abstract: A microlens structure and a method of fabrication thereof are provided. The method comprises forming a layer of microlens material over a substrate, which has photo-sensitive elements formed therein. The microlens material, which comprises a photo-resist material, is exposed in accordance with a desired pattern a plurality of times. The energy used with each exposure process is less than the energy required if a single exposure is used. Furthermore, the masks used for each exposure may differ. In an embodiment, the masks are varied so as to create a notch in the upper corner of the microlens.

Abstract: A new method is provided of treating the wafer prior to the process of singulating the wafer into individual die. A first surface of the wafer over which CMOS image sensor devices have been created is coated with a layer of material that is non-soluble in water. The wafer is attached to a tape by bringing a second surface of the wafer in contact with the tape. The wafer is singulated by approaching the first surface of the wafer and by sawing first through the layer of material that has been coated over the first surface of the wafer and by then sawing through the wafer, stopping at the surface of the tape. A thorough water rinse is applied to the surface of the singulated wafer, followed by a wafer clean applying specific chemicals for this purpose. The singulated die is now removed from the tape and further processed by applying steps of die mount, wire bonding, surrounding the die in a mold compound and marking the package.

Abstract: The present invention provides an advanced cavity structure for optically sensitive devices in wafer level chip scale package and methods of manufacturing thereof. Image sensor or light detection integrated circuits are formed on substrate. Substantially absorptive bleached cavity walls are formed about the image sensor or light detection integrated circuits. Upon attaching a transparent layer to the bleached cavity walls and above the image sensor or light detection integrated circuits, open chambers are formed thereby permitting the image sensor or light detection integrated circuits to receive and manipulate signals without decreasing or decaying the optical sensitivity of the incident light. Furthermore, individual image sensor or light detection integrated circuits may be separated from each other to comprise wafer level chip scale packages of at least one image sensor or light detection integrated circuits, at least one transparent layer, and at least one open chamber.

Abstract: A method is provided for processing a substrate. The substrate has at least one filter region, a plurality of bond pads, and a plurality of scribe lines arranged around the filter region and bond pads. A first planarization layer is formed above the substrate. The planarization layer has a substantially flat top surface overlying the filter region, the bond pads and the scribe lines. At least one color resist layer is formed over the first planarization layer and within the filter region while the first planarization layer covers the bond pads and the scribe lines.