Abstract: An improved silicon carbide (SiC) super junction (SJ) MOSFET having at least two buried P-shield (BPS) regions facing each other for gate oxide electric-field and saturation current reductions is disclosed. The two BPS regions are spaced apart from a body region and formed either adjoining sidewalls or below a bottom of a P column region. Moreover, a saturation current pitching (SCP) structure formed in a Junction Field Effect Transistor (JFET) region sandwiched between the two BPS regions limits saturation current of the device in a forward conduction stage for the short-circuit capability improvement.

Abstract: An electronic structure includes a packaging structure, a circuit pattern structure, an underfill and a protrusion structure. The circuit pattern structure is disposed over the packaging structure. A gap is between the circuit pattern structure and the packaging structure. The underfill is disposed in the gap. The protrusion structure is disposed in the gap, and is configured to facilitate the distributing of the underfill in the gap.

Abstract: An optical system is provided and includes a fixed assembly, a movable element, a movable assembly, and a driving module. The fixed assembly defines a main axis, and the fixed assembly has a casing on which a casing opening is formed, corresponding to the main axis. The movable element is movable relative to the fixed assembly and is connected to a first optical element. The movable assembly is connected to the movable element. The driving module is configured to drive the movable assembly so as to drive the movable element to move relative to the fixed assembly. The first optical element has a first section and a second section. When viewed along the main axis, the size of the first section is larger than the size of the casing opening, and the size of the second section is smaller than the size of the casing opening.

Abstract: The present disclosure provides a camera device and a long tuning range camera assembly. The camera device comprises a frame body, a circuit component, a carrying component, and a magnetic conductive sheet. The frame body comprises an accommodating space. The circuit component comprises a circuit board, a magnetic sensing element, and a coil. The carrying component comprises a main body, a driving magnet, and a sensing magnet. Wherein the magnetic sensing element is configured to magnetically sense the sensing magnet to generate a specific signal, which comprises an angle between the sensing magnet and the magnetic sensing element or/and a position of the main body relative to the frame body. The long tuning range camera assembly comprises two sets of camera devices.

Abstract: A camera device comprises an image sensor, a first moving module and two groups of second moving modules. The first moving module is connected to the image sensor. The first moving module is activated to move the image sensor linearly along a first axis. The second moving module is connected to the image sensor. The second moving module is activated to move the image sensor linearly along a second axis, which intersects with the first axis. The two groups of second moving modules are activated simultaneously to rotate the image sensor around a third axis, which is orthogonal to the first and second axes, respectively. The image sensor compensates for the image by linear movement in the direction of the first axis and the second axis and can also compensate for the image by rotation in the direction of the third axis to achieve three-axis image stabilization.

Abstract: An anti-twist structure of a voice coil motor includes a base, a lens housing, a first elastic sheet, a second elastic sheet, a magnet, and a yoke member. The lens housing has first margin wall and a second margin wall, and a first protrusion extends from the first margin wall. The height of the second protrusion is lower than the height of the first protrusion. The yoke member has a first wall, a connection wall, a second wall, and a side wall. The first wall is disposed above the first protrusion, and the second wall is disposed above the second protrusion. The lens housing has a deflectable angle relative to a horizontal reference line. When the lens housing deflects to a maximum value of the deflectable angle, the first margin wall abuts against the second wall and/or the first protrusion abuts against the first wall.

Abstract: An anti-twist structure of a voice coil motor includes a base, a lens housing, a first elastic sheet, a second elastic sheet, a magnet, and a yoke member. The lens housing has first margin wall and a second margin wall, and a first protrusion extends from the first margin wall. The height of the second protrusion is lower than the height of the first protrusion. The yoke member has a first wall, a connection wall, and a second wall. The first wall is disposed above the first protrusion, and the second wall is disposed above the second protrusion. The lens housing has a deflectable angle relative to a horizontal reference line. When the lens housing deflects to a maximum value of the deflectable angle, the first margin wall abuts against the second wall and/or the first protrusion abuts against the first wall.

Abstract: A SiC trench MOSFET with an embedded junction Schottky barrier diode (JBSD) having P-shield (PS) regions surrounding bottoms of source-body-Schottky contact (SBSC) trenches for gate oxide electric-field and switching loss reductions is disclosed. A source metal connects with the PS regions and the JBSD directly. Sidewall P (SP) regions are formed along a portion of sidewalls of the SBSC trenches to improve a tradeoff between a drain-source leakage current of the SiC trench MOSFET and a forward voltage of the JBSD. The device further comprises an N-type shield region formed below each of gate trenches for gate oxide electric field strength and specific on-resistance reductions.

Abstract: An image compensation device and a prism carrying mechanism thereof. The prism carrying mechanism comprises a base and a pair of prism carrying members. The base comprises a base body, a light passing hole disposed at the base body, and a plurality of first sliding assembling parts integrally formed on the same side of the base body. Each of the prism carrying members comprises a carrying member body, a prism assembling part disposed at the carrying member body and corresponding to the light passing hole, and a plurality of second sliding assembling parts integrally formed on the same side of the carrying member body. The prism assembling parts of the pair of prism carrying members are oppositely and alternately disposed in an axial direction. The plurality of second sliding assembling parts are slidably assembled to the plurality of first sliding assembling parts respectively.

Abstract: The present disclosure provides a camera device including a first frame, a second frame, a camera component, and a driving component. The first frame includes a first arc surface on an inner surface of the first frame and recessing inward to form a circular arc shape. The second frame is movably disposed in the first frame and includes a second arc surface on an outer surface of the second frame and protruding outward to form a circular arc shape. The camera component is fixedly disposed in the second frame. The driving component is disposed on the first frame and the second frame, and the driving component is configured to drive the second frame to rotate with the first direction, the second direction, and the third direction as the axes.

Abstract: The present invention introduces a new shielded gate trench MOSFETs with improved specific on-resistance and avalanche capability structures including an active area and an edge termination area, wherein an epitaxial layer having special multiple stepped epitaxial (MSE) layers in an oxide charge balance (OCB) region, and an edge termination having multiple trench field plates, and electric field reducing regions disposed surrounding bottom of gate trenches with a doping concentration lower than said bottom epitaxial layer of the MSE layers. Moreover, in some preferred embodiment, a multiple stepped oxide structure in the OCB region, and an epitaxial layer in a buffer region below the OCB region with a doping concentration lower than the MSE layers is introduced to further reduce the specific on-resistance and enhance device ruggedness.

Abstract: Shielded gate trench MOSFETs with gate trenches separated from termination trenches are disclosed, wherein at least one termination trench surrounds outer periphery of gate trenches and does not surround the gate metal pad area. The shielded gate electrode inside each of the gate trenches is connected to a source metal through at least one shielded gate trench contact which is spaced apart from at least one gate metal runner with a distance larger than 100 um. A breakdown voltage enhancement region and an avalanche capability enhancement region in the device structures are also disclosed.

Abstract: A defect detection method includes obtaining a first image corresponding to a first area on an object revealing an apparent defect, the first area bounding the area showing the apparent defect; selecting a detection model according to a size of the first image, the detection model selected being one of a group of three models based on dimensions of image, the image being in one of portrait, landscape, or regular square proportions; detecting and confirming or denying a defect on the first image according to the detection model and outputting a detection result, the use of only three possible AI models reduces the likelihood of mis-determinations. An electronic device and a non-volatile storage medium therein, for performing the above-described method, are also disclosed.

Abstract: The anti-twist structure includes a base, a lens housing, an elastic sheet and a yoke member. The lens housing has a margin wall with a first protrusion, a second protrusion and a contact portion. The contact portion is extended outwardly the first protrusion, and the second protrusion is protruded from the contact portion. The first protrusion and the second protrusion are protruded along an axial direction substantially perpendicular to the margin wall. The elastic sheet is disposed on the contact portion. When the lens housing deflects from the horizontal reference line to a maximum value of the deflectable angle, the first protrusion abuts against an upper wall of the yoke member, the second protrusion abuts against the elastic sheet, and the contact portion abuts against the elastic sheet or the upper wall at the same time, whereby the lens housing and the yoke member interfere with each other.

Abstract: The anti-twist structure includes a base, a lens housing, an elastic sheet and a yoke member. The lens housing has a margin wall with a first protrusion, a second protrusion and a contact portion. The contact portion is extended outwardly the first protrusion, and the second protrusion is protruded from the contact portion. The first protrusion and the second protrusion are protruded along an axial direction substantially perpendicular to the margin wall. The elastic sheet is disposed on the contact portion. When the lens housing deflects from the horizontal reference line to a maximum value of the deflectable angle, the first protrusion abuts against an upper wall of the yoke member, the second protrusion abuts against the elastic sheet, and the contact portion abuts against the elastic sheet or the upper wall at the same time, whereby the lens housing and the yoke member interfere with each other.

Abstract: A camera assembly comprising a casing, a carrying component, a magnetic component, a light sensing component, and a carrying board. The casing comprises a lens accommodating groove, a housing, and a base on which the housing is disposed. The lens accommodating groove is disposed between the housing and the base. An opening of the lens accommodating groove is disposed at the housing. The carrying component comprises a carrying body and a first coil disposed on a periphery of the carrying body. The carrying component is assembled in the lens accommodating groove. The magnetic component is disposed on a periphery of the first coil and on an inner wall of the lens accommodating groove. The light sensing component comprises a light sensing member, a baseplate, and a second coil.

Abstract: A camera structure, including a lens holder, a lens frame and a plurality of balls. The lens holder has a holder body, one end of which has a first rolling groove. The first groove wall part and the second groove wall part are disposed on two sides of the first rolling groove, and the groove bottom is disposed between the first groove wall part and the second groove wall part. The lens frame is mounted on an outer side of the holder body. The plurality of balls are located inside the first rolling groove, wherein the first groove wall part and the second groove wall part support the plurality of balls, there is a gap between each of the plurality of balls and the groove bottom, and the plurality of balls lay between the lens holder and the lens frame.

Abstract: An anti-twist structure of a voice coil motor includes a base, a lens housing, a first elastic sheet, a second elastic sheet, a magnet, and a yoke member. The lens housing has first margin wall and a second margin wall, and a first protrusion extends from the first margin wall. The yoke member has a first wall, a connection wall, a second wall, and a side wall. The first wall is disposed above the first protrusion, and the second wall is above the first margin wall. The lens housing has a deflectable angle relative to a horizontal reference line. When the lens housing deflects to a maximum value of the deflectable angle, the first margin wall abuts against the second wall and/or the first protrusion abuts against the first wall.

Abstract: An improved SiC trench MOSFET having N-type and P-type shield zones for gate oxide electric-field reduction is disclosed. The N-type shield zones are formed below a gate electrode and the P-type shield zones adjoin lower surfaces of the body regions. The device further comprises a current spreading region surrounding at least sidewalls of the gate trenches for on-resistance reduction.

Abstract: Shielded gate trench MOSFETs with gate trenches separated from termination trenches are disclosed, wherein the termination trenches surrounds outer periphery of gate trenches and do not surround said gate metal pad area; Inner edges of a first termination trench of the termination trenches adjacent to trench ends of the gate trenches have a plurality of wave shape portions in regions between two adjacent trench ends of the gate trenches while outer edges have a straight shape to reduce drain-source leakage current. Each of gate trenches on which has at least one shielded gate trench contact connected to a shielded gate electrode, and the shielded gate trench contact is spaced apart from any of multiple gate metal runners with a distance larger than 100 um.