Abstract: Flaky alumina particles including mullite in a surface layer of the flaky alumina particles. A method for producing flaky alumina particles including forming a mixture by mixing together an aluminum compound that contains elemental aluminum, a molybdenum compound that contains elemental molybdenum, and silicon or a silicon compound that contains elemental silicon, the aluminum compound being in an amount greater than or equal to 50 mass %, calculated as Al2O3, the molybdenum compound being in an amount less than or equal to 40 mass %, calculated as MoO3, the silicon or the silicon compound being in an amount of 0.5 mass % or greater and less than 10 mass %, calculated as SiO2, relative to a total mass of the flaky alumina particles taken as 100 mass %; and firing the mixture.

Abstract: A variable capacity turbocharger includes a housing, a turbine impeller at least partially located in the housing, a scroll flow path located in the housing and encircling the turbine impeller, a first nozzle ring and a second nozzle ring facing each other in the housing, a nozzle flow path located between the first nozzle ring and the second nozzle ring and fluidly coupling the scroll flow path to the turbine impeller, a gap formed between the first nozzle ring and the housing, and a bearing hole located in the first nozzle ring and including an opening adjacent to the gap. The gap is located on an opposite side of the first nozzle ring to the nozzle flow path. Additionally, the gap is connected to the scroll flow path.

Abstract: A semiconductor device includes a semiconductor substrate, a semiconductor layer, a first insulating film, and a conductive film. The semiconductor layer is formed on the semiconductor substrate. A first trench reaching the semiconductor substrate is formed within the semiconductor layer. The first insulating film is formed on the inner side surface of the first trench such that a portion of the semiconductor substrate is exposed in the first trench. The conductive film is electrically connected with the semiconductor substrate and formed on the inner side surface of the first trench through the first insulating film. In plan view, a first length of the first trench in an extending direction of the first trench is greater than a second length of the first trench in a width direction perpendicular to the extending direction, and equal to or less than 30 ?m.

Abstract: A semiconductor device includes a semiconductor substrate, a semiconductor layer, a first insulating film, and a conductive film. The semiconductor layer is formed on the semiconductor substrate. A first trench reaching the semiconductor substrate is formed within the semiconductor layer. The first insulating film is formed on the inner side surface of the first trench such that a portion of the semiconductor substrate is exposed in the first trench. The conductive film is electrically connected with the semiconductor substrate and formed on the inner side surface of the first trench through the first insulating film. In plan view, a first length of the first trench in an extending direction of the first trench is greater than a second length of the first trench in a width direction perpendicular to the extending direction, and equal to or less than 30 ?m.

Abstract: A semiconductor device includes a semiconductor substrate, a semiconductor layer, a first insulating film, and a conductive film. The semiconductor layer is formed on the semiconductor substrate. A first trench reaching the semiconductor substrate is formed within the semiconductor layer. The first insulating film is formed on the inner side surface of the first trench such that a portion of the semiconductor substrate is exposed in the first trench. The conductive film is electrically connected with the semiconductor substrate and formed on the inner side surface of the first trench through the first insulating film. In plan view, a first length of the first trench in an extending direction of the first trench is greater than a second length of the first trench in a width direction perpendicular to the extending direction, and equal to or less than 30 ?m.

Abstract: A semiconductor device includes a semiconductor substrate, a semiconductor layer, a first insulating film, and a conductive film. The semiconductor layer is formed on the semiconductor substrate. A first trench reaching the semiconductor substrate is formed within the semiconductor layer. The first insulating film is formed on the inner side surface of the first trench such that a portion of the semiconductor substrate is exposed in the first trench. The conductive film is electrically connected with the semiconductor substrate and formed on the inner side surface of the first trench through the first insulating film. In plan view, a first length of the first trench in an extending direction of the first trench is greater than a second length of the first trench in a width direction perpendicular to the extending direction, and equal to or less than 30 ?m.

Abstract: A method of manufacturing a nonvolatile semiconductor storage device includes sequentially forming a charge storage film, a conductive film, and a mask film on a semiconductor substrate, sequentially removing the mask film, the conductive film, and the charge storage film at a given portion to form a groove, forming a word gate electrode to fill in the groove whose inside is covered with an insulating film, after said forming the word gate electrode, removing the mask film, after said removing the mask film, forming a spacer film to cover the conductive film and the word gate electrode, etching back the spacer film to form a spacer layer on both sides of the word gate electrode through the insulating film, removing the conductive film and the charge storage film to form a control gate electrode, and forming a source drain diffusion layer.

Abstract: A nonvolatile semiconductor memory device includes a first columnar protrusion and a second columnar protrusion formed to be spaced out on a surface of a semiconductor substrate, and the first and the second columnar protrusions each include a split gate nonvolatile memory cell in which a first source/drain region and a second source/drain region are formed at a surrounding part and an extremity, and in which a first layered structure, in which a charge accumulating film and a memory gate line are layered, and a second layered structure, in which a gate oxide film and a control gate line are layered, are formed on a surface of a sidewall between the surrounding part and the extremity. The first layered structure is also formed between the first and second columnar protrusions, whereby the memory gate line of the first columnar protrusion and the second columnar protrusion is connected each other.

Abstract: A method of manufacturing a nonvolatile semiconductor storage device includes sequentially forming a charge storage film, a conductive film, and a mask film on a semiconductor substrate, sequentially removing the mask film, the conductive film, and the charge storage film at a given portion to form a groove, forming a word gate electrode to fill in the groove whose inside is covered with an insulating film, after said forming the word gate electrode, removing the mask film, after said removing the mask film, forming a spacer film to cover the conductive film and the word gate electrode, etching back the spacer film to form a spacer layer on both sides of the word gate electrode through the insulating film, removing the conductive film and the charge storage film to form a control gate electrode, and forming a source drain diffusion layer.

Abstract: A nonvolatile semiconductor storage device includes a semiconductor substrate, a charge storage layer formed above the semiconductor substrate, a control gate formed above the charge storage layer, a silicide layer formed above the control gate, a word gate formed above a side of the control gate. A top surface of the silicide layer is flat.

Abstract: A semiconductor memory device has: a substrate; a memory cell transistor of a split-gate type formed on the substrate; and a reference transistor formed on the substrate and used for generating a reference current that is used in sensing data stored in the memory cell transistor. The memory cell transistor has a floating gate and a control gate, while the reference transistor is a MIS (Metal Insulator Semiconductor) transistor having a single gate electrode.

Abstract: A nonvolatile semiconductor memory device includes a first columnar protrusion and a second columnar protrusion formed to be spaced out on a surface of a semiconductor substrate, and the first and the second columnar protrusions each include a split gate nonvolatile memory cell in which a first source/drain region and a second source/drain region are formed at a surrounding part and an extremity, and in which a first layered structure, in which a charge accumulating film and a memory gate line are layered, and a second layered structure, in which a gate oxide film and a control gate line are layered, are formed on a surface of a sidewall between the surrounding part and the extremity. The first layered structure is also formed between the first and second columnar protrusions, whereby the memory gate line of the first columnar protrusion and the second columnar protrusion is connected each other.

Abstract: This invention relates to a hydroxy-tetrahydro-naphthalene or an urea derivative formula (I) and salts thereof which are useful as active ingredients of pharmaceutical preparations, wherein A represents formula (II) or (III) wherein # represents the connection position to the molecule and Q1a, Q2a, Q3a and Q4a are defined, and E represents formula (IV) or (V) wherein # represents the connection position to the molecule and Q1b, Q2b, Q3b, Q4b, Q5b, R1b, na, ma, Xa and Ra are defined.

Abstract: A nonvolatile semiconductor storage device includes a semiconductor substrate, a charge storage layer formed above the semiconductor substrate, a control gate formed above the charge storage layer, a spacer layer formed above the control gate and a word gate formed above a side of the control gate and the spacer layer. Atop surface of the spacer layer is lower as the top surface of the spacer layer is farther from the word gate.

Abstract: A nonvolatile semiconductor storage device includes a semiconductor substrate, a charge storage layer formed above the semiconductor substrate, a control gate formed above the charge storage layer, a silicide layer formed above the control gate, a word gate formed above a side of the control gate. A top surface of the silicide layer is flat.

Abstract: This invention relates to bicyclic amide, carbamate or urea derivatives and salts thereof which are useful as active ingredients of pharmaceutical preparations. The bicyclic amide, carbamate or urea derivative of the present invention has vanilloid receptor (VR1) antagonistic activity, and can be used for the prophylaxis and treatment of diseases associated with VR1 activity, in particular for the treatment of urological diseases or disorders, such as detrusor overactivity (overactive bladder), urinary incontinence, neurogenic detrusor oeractivity (detrusor hyperflexia), idiopathic detrusor overactivity (detrusor instability), benign prostatic hyperplasia, and lower urinary tract symptoms; chronic pain, neuropathic pain, postoperative pain, rheumatoid arthritic pain, neuralgia, neuropathies, algesia, nerve injury, ischaemia, neurodegeneration, stroke, and inflammatory disorders such as asthma and chronic obstructive pulmonary (or airways) disease (COPD).

Abstract: This invention relates to tetrahydro-naphthalene and urea derivatives and salts thereof which are useful as active ingredients of pharmaceutical preparations. The tetrahydro-naphthalene and urea derivatives of the present invention have vanilloid receptor (VR1) antagonistic activity, and can be used for the prophylaxis and treatment of diseases associated with VR1 activity, in particular for the treatment of urological diseases or disorders, such as detrusor overactivity (overactive bladder), urinary incontinence, neurogenic detrusor overactivity (detrusor hyperflexia), idiopathic detrusor overactivity (detrusor instability), benign prostatic hyperplasia, and lower urinary tract symptoms; chronic pain, neuropathic pain, postoperative pain, rheumatoid arthritic pain, neuralgia, neuropathies, algesia, nerve injury, ischaemia, neurodegeneration, stroke, and inflammatory disorders such as asthma and chronic obstructive pulmonary (or airways) disease (COPD).

Abstract: A semiconductor memory device has: a substrate; a memory cell transistor of a split-gate type formed on the substrate; and a reference transistor formed on the substrate and used for generating a reference current that is used in sensing data stored in the memory cell transistor. The memory cell transistor has a floating gate and a control gate, while the reference transistor is a MIS (Metal Insulator Semiconductor) transistor having a single gate electrode.

Abstract: This invention relates to a hydroxy-tetrahydro-naphthalene or an urea derivative formula (I) and salts thereof which are useful as active ingredients of pharmaceutical preparations, wherein A represents formula (II) or (III) wherein # represents the connection position to the molecule and Q1a, Q2a, Q3a and Q4a are defined, and E represents formula (IV) or (V) wherein # represents the connection position to the molecule and Q1b, Q2b, Q3b, Q4b, Q5b, R1b, na, ma, Xa and Ra are defined.

Abstract: Reagents which regulate human transient receptor potential channel and reagents which bind to human transient receptor potential channel gene products can play a role in preventing, ameliorating, or correcting dysfunctions or diseases including, but not limited to, urinary incontinence, overactive bladder, benign prostatic hyperplasia, lower urinary tract syndromes, and CNS disorders.