Patents by Inventor Fumihiko Koga
Fumihiko Koga has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140118593Abstract: Provided is a solid state imaging device including: a pixel portion where pixel sharing units are disposed in an array shape and where another one pixel transistor group excluding transfer transistors is shared by a plurality of photoelectric conversion portions; transfer wiring lines which are connected to the transfer gate electrodes of the transfer transistors of the pixel sharing unit and which are disposed to extend in a horizontal direction and to be in parallel in a vertical direction as seen from the top plane; and parallel wiring lines which are disposed to be adjacent to the necessary transfer wiring lines in the pixel sharing unit and which are disposed to be in parallel to the transfer wiring lines as seen from the top plane, wherein voltages which are used to suppress potential change of the transfer gate electrodes are supplied to the parallel wiring lines.Type: ApplicationFiled: January 6, 2014Publication date: May 1, 2014Applicant: Sony CorporationInventors: Toshifumi Wakano, Fumihiko Koga
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Patent number: 8659688Abstract: Provided is a solid state imaging device including: a pixel portion where pixel sharing units are disposed in an array shape and where another one pixel transistor group excluding transfer transistors is shared by a plurality of photoelectric conversion portions; transfer wiring lines which are connected to the transfer gate electrodes of the transfer transistors of the pixel sharing unit and which are disposed to extend in a horizontal direction and to be in parallel in a vertical direction as seen from the top plane; and parallel wiring lines which are disposed to be adjacent to the necessary transfer wiring lines in the pixel sharing unit and which are disposed to be in parallel to the transfer wiring lines as seen from the top plane, wherein voltages which are used to suppress potential change of the transfer gate electrodes are supplied to the parallel wiring lines.Type: GrantFiled: November 12, 2010Date of Patent: February 25, 2014Assignee: Sony CorporationInventors: Toshifumi Wakano, Fumihiko Koga
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Patent number: 8604408Abstract: A solid-state imaging device includes: a pixel having a photodiode and a pixel transistor; a first isolation region using a semiconductor region containing impurities formed between neighboring photodiodes; and a second isolation region using an semiconductor region containing impurities formed between the photodiode and the pixel transistor, wherein an impurity concentration of the first isolation region is different from an impurity concentration of the second isolation region.Type: GrantFiled: November 11, 2010Date of Patent: December 10, 2013Assignee: Sony CorporationInventors: Takeshi Yanagita, Fumihiko Koga, Toshifumi Wakano, Takashi Nagano
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Patent number: 8431880Abstract: A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of the sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the peripheral circuit portion; a first silicide blocking film composed of the sidewall film and disposed on the photoelectric conversion portion and a part of the MOS transistors in the pixel portion; and a second silicide blocking film disposed on the MOS transistors in the pixel portion so as to overlap with a part of the first silicide blocking film, wherein the MOS transistors in the pixel portion are covered with the first and second silicide blocking films.Type: GrantFiled: January 12, 2012Date of Patent: April 30, 2013Assignee: Sony CorporationInventors: Takuji Matsumoto, Tetsuji Yamaguchi, Keiji Tatani, Yutaka Nishimura, Kazuichiro Itonaga, Hiroyuki Mori, Norihiro Kubo, Fumihiko Koga, Shinichiro Izawa, Susumu Ooki
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Patent number: 8368161Abstract: A solid-state image capturing device includes, in a semiconductor substrate, a photoelectric conversion section which performs photoelectric conversion on incident light to obtain signal charges; a pixel transistor section which outputs the signal charges generated in the photoelectric conversion section; a peripheral circuit section which is formed in the periphery of a pixel section including the photoelectric conversion section and the pixel transistor section; and isolation areas which electrically separate the photoelectric conversion section, the pixel transistor section, and the peripheral circuit section from each other. The isolation areas in the periphery of the pixel transistor section each have an insulating section formed higher than a surface of the semiconductor substrate. A first gate electrode of a transistor of the pixel transistor section is formed between the insulating sections and on the semiconductor substrate with a gate insulating film interposed therebetween.Type: GrantFiled: February 24, 2010Date of Patent: February 5, 2013Assignee: Sony CorporationInventors: Fumihiko Koga, Yoshiharu Kudoh
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Publication number: 20120235022Abstract: A solid-state imaging device that includes: a pixel array section configured by an array of a unit pixel, including an optoelectronic conversion section that subjects an incoming light to optoelectronic conversion and stores therein a signal charge, a transfer transistor that transfers the signal charge stored in the optoelectronic conversion section, a charge-voltage conversion section that converts the signal charge provided by the transfer transistor into a signal voltage, and a reset transistor that resets a potential of the charge-voltage conversion section; and voltage setting means for setting a voltage of a well of the charge-voltage conversion section to be negative.Type: ApplicationFiled: May 25, 2012Publication date: September 20, 2012Applicant: SONY CORPORATIONInventor: Fumihiko KOGA
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Patent number: 8188519Abstract: A solid-state imaging device that includes: a pixel array section configured by an array of a unit pixel, including an optoelectronic conversion section that subjects an incoming light to optoelectronic conversion and stores therein a signal charge, a transfer transistor that transfers the signal charge stored in the optoelectronic conversion section, a charge-voltage conversion section that converts the signal charge provided by the transfer transistor into a signal voltage, and a reset transistor that resets a potential of the charge-voltage conversion section; and voltage setting means for setting a voltage of a well of the charge-voltage conversion section to be negative.Type: GrantFiled: August 29, 2006Date of Patent: May 29, 2012Assignee: Sony CorporationInventor: Fumihiko Koga
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Publication number: 20120104479Abstract: A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of the sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the peripheral circuit portion; a first silicide blocking film composed of the sidewall film and disposed on the photoelectric conversion portion and a part of the MOS transistors in the pixel portion; and a second silicide blocking film disposed on the MOS transistors in the pixel portion so as to overlap with a part of the first silicide blocking film, wherein the MOS transistors in the pixel portion are covered with the first and second silicide blocking films.Type: ApplicationFiled: January 12, 2012Publication date: May 3, 2012Applicant: SONY CORPORATIONInventors: Takuji Matsumoto, Tetsuji Yamaguchi, Keiji Tatani, Yutaka Nishimura, Kazuichiro Itonaga, Hiroyuki Mori, Norihiro Kubo, Fumihiko Koga, Shinichiro Izawa, Susumu Ooki
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Patent number: 8115154Abstract: A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of the sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the peripheral circuit portion; a first silicide blocking film composed of the sidewall film and disposed on the photoelectric conversion portion and a part of the MOS transistors in the pixel portion; and a second silicide blocking film disposed on the MOS transistors in the pixel portion so as to overlap with a part of the first silicide blocking film, wherein the MOS transistors in the pixel portion are covered with the first and second silicide blocking films.Type: GrantFiled: July 27, 2009Date of Patent: February 14, 2012Assignee: Sony CorporationInventors: Takuji Matsumoto, Tetsuji Yamaguchi, Keiji Tatani, Yutaka Nishimura, Kazuichiro Itonaga, Hiroyuki Mori, Norihiro Kubo, Fumihiko Koga, Shinichiro Izawa, Susumu Ooki
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Publication number: 20110269259Abstract: A solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel section. The portion of the second isolation region buried into the semiconductor substrate is shallower than the portion buried into the semiconductor substrate of the first isolation region, and the height of the upper face of the second isolation region is equal to that of the first isolation region. A method of producing the solid-state imaging device and an electronic device provided with the solid-state imaging devices are also disclosed.Type: ApplicationFiled: July 8, 2011Publication date: November 3, 2011Applicant: SONY CORPORATIONInventors: Keiji Tatani, Takuji Matsumoto, Yasushi Tateshita, Fumihiko Koga, Takashi Nagano, Takahiro Toyoshima, Tetsuji Yamaguchi, Keiichi Nakazawa, Naoyuki Miyashita, Yoshihiko Nagahama
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Publication number: 20110128400Abstract: Provided is a solid state imaging device including: a pixel portion where pixel sharing units are disposed in an array shape and where another one pixel transistor group excluding transfer transistors is shared by a plurality of photoelectric conversion portions; transfer wiring lines which are connected to the transfer gate electrodes of the transfer transistors of the pixel sharing unit and which are disposed to extend in a horizontal direction and to be in parallel in a vertical direction as seen from the top plane; and parallel wiring lines which are disposed to be adjacent to the necessary transfer wiring lines in the pixel sharing unit and which are disposed to be in parallel to the transfer wiring lines as seen from the top plane, wherein voltages which are used to suppress potential change of the transfer gate electrodes are supplied to the parallel wiring lines.Type: ApplicationFiled: November 12, 2010Publication date: June 2, 2011Applicant: SONY CORPORATIONInventors: Toshifumi Wakano, Fumihiko Koga
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Publication number: 20110127408Abstract: A solid-state imaging device includes: a pixel having a photodiode and a pixel transistor; a first isolation region using a semiconductor region containing impurities formed between neighboring photodiodes; and a second isolation region using an semiconductor region containing impurities formed between the photodiode and the pixel transistor, wherein an impurity concentration of the first isolation region is different from an impurity concentration of the second isolation region.Type: ApplicationFiled: November 11, 2010Publication date: June 2, 2011Applicant: SONY CORPORATIONInventors: Takeshi Yanagita, Fumihiko Koga, Toshifumi Wakano, Takashi Nagano
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Publication number: 20110102620Abstract: A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function. An inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode.Type: ApplicationFiled: October 22, 2010Publication date: May 5, 2011Applicant: SONY CORPORATIONInventors: Yorito Sakano, Takashi Abe, Keiji Mabuchi, Ryoji Suzuki, Hiroyuki Mori, Yoshiharu Kudoh, Fumihiko Koga, Takeshi Yanagita, Kazunobu Ota
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Publication number: 20110073923Abstract: A solid-state imaging device includes a first-conductivity-type semiconductor well region, a plurality of pixels each of which is formed on the semiconductor well region and is composed of a photoelectric conversion portion and a pixel transistor, an element isolation region provided between the pixels and in the pixels, and an element isolation region being free from an insulation film and being provided between desired pixel transistors.Type: ApplicationFiled: September 14, 2010Publication date: March 31, 2011Applicant: SONY CORPORATIONInventors: Keiji Tatani, Fumihiko Koga, Takashi Nagano
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Publication number: 20100225775Abstract: A solid-state image capturing device includes, in a semiconductor substrate, a photoelectric conversion section which performs photoelectric conversion on incident light to obtain signal charges; a pixel transistor section which outputs the signal charges generated in the photoelectric conversion section; a peripheral circuit section which is formed in the periphery of a pixel section including the photoelectric conversion section and the pixel transistor section; and isolation areas which electrically separate the photoelectric conversion section, the pixel transistor section, and the peripheral circuit section from each other. The isolation areas in the periphery of the pixel transistor section each have an insulating section formed higher than a surface of the semiconductor substrate. A first gate electrode of a transistor of the pixel transistor section is formed between the insulating sections and on the semiconductor substrate with a gate insulating film interposed therebetween.Type: ApplicationFiled: February 24, 2010Publication date: September 9, 2010Applicant: SONY CORPORATIONInventors: Fumihiko Koga, Yoshiharu Kudoh
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Publication number: 20100025569Abstract: A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of the sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the peripheral circuit portion; a first silicide blocking film composed of the sidewall film and disposed on the photoelectric conversion portion and a part of the MOS transistors in the pixel portion; and a second silicide blocking film disposed on the MOS transistors in the pixel portion so as to overlap with a part of the first silicide blocking film, wherein the MOS transistors in the pixel portion are covered with the first and second silicide blocking films.Type: ApplicationFiled: July 27, 2009Publication date: February 4, 2010Applicant: SONY CORPORATIONInventors: Takuji Matsumoto, Tetsuji Yamaguchi, Keiji Tatani, Yutaka Nishimura, Kazuichiro Itonaga, Hiroyuki Mori, Norihiro Kubo, Fumihiko Koga, Shinichiro Izawa, Susumu Ooki
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Publication number: 20090256226Abstract: Disclosed is a solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel section. The portion of the second isolation region buried into the semiconductor substrate is shallower than the portion buried into the semiconductor substrate of the first isolation region, and the height of the upper face of the second isolation region is equal to that of the first isolation region. A method of producing the solid-state imaging device and an electronic device provided with the solid-state imaging devices are also disclosed.Type: ApplicationFiled: April 8, 2009Publication date: October 15, 2009Applicant: Sony CorporationInventors: Keiji Tatani, Takuji Matsumoto, Yasushi Tateshita, Fumihiko Koga, Takashi Nagano, Takahiro Toyoshima, Tetsuji Yamaguchi, Keiichi Nakazawa, Naoyuki Miyashita, Yoshihiko Nagahama
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Publication number: 20070051988Abstract: A solid-state imaging device that includes: a pixel array section configured by an array of a unit pixel, including an optoelectronic conversion section that subjects an incoming light to optoelectronic conversion and stores therein a signal charge, a transfer transistor that transfers the signal charge stored in the optoelectronic conversion section, a charge-voltage conversion section that converts the signal charge provided by the transfer transistor into a signal voltage, and a reset transistor that resets a potential of the charge-voltage conversion section; and voltage setting means for setting a voltage of a well of the charge-voltage conversion section to be negative.Type: ApplicationFiled: August 29, 2006Publication date: March 8, 2007Inventor: Fumihiko Koga