Abstract: According to one embodiment, a transmitter includes a 1st circuit configured to execute a 1st band limitation by waveform shaping in a time region with respect to 1st data relating to a 1st channel to generate a 1st signal; a 2nd circuit configured to execute a 2nd band limitation by the waveform shaping in the time region with respect to 2nd data relating to a 2nd channel to generate a 2nd signal; a 3rd circuit configured to generate a 3rd signal based on the 1st signal and a 1st frequency relating to the 1st channel; a 4th circuit configured to generate a 4th signal based on the 2nd signal and a 2nd frequency relating to the 2nd channel; and a 5th circuit configured to generate a 5th signal by multiplexing the 3rd signal and the 4th signal.

Abstract: A memcapacitor according to an embodiment includes a first electrode, a first dielectric layer provided on the first electrode, a plurality of variable resistance portions provided separately from each other on the first dielectric layer, a second dielectric layer provided on the first dielectric layer and between the variable resistance portions, and a second electrode provided on the variable resistance portions and the second dielectric layer. Each of the variable resistance portions is formed of a material that allows diffusion of metal atoms constituting the second electrode to inside of the variable resistance portion, and the second dielectric layer is formed of a material that prevents diffusion of the metal atoms constituting the second electrode to inside of the second dielectric layer.

Abstract: According to an embodiment, a semiconductor integrated circuit includes an amplification unit, a comparison unit and a control unit. The amplification unit is configured to amplify a pixel value with an amplification factor that is set in a variable manner, the pixel value being according to an intensity of light irradiated on a pixel. The comparison unit is configured to compare an output value given by the amplification unit and a reference value. The control unit is configured to cause the amplification factor to be higher than a present amplification factor, only when the output value given by the amplification unit is not saturated even where the amplification factor is caused to be higher than the present amplification factor, based on the comparison result of the comparison unit.

Abstract: According to an embodiment, a semiconductor integrated circuit includes an amplification unit, a comparison unit and a control unit. The amplification unit is configured to amplify a pixel value with an amplification factor that is set in a variable manner, the pixel value being according to an intensity of light irradiated on a pixel. The comparison unit is configured to compare an output value given by the amplification unit and a reference value. The control unit is configured to cause the amplification factor to be higher than a present amplification factor, only when the output value given by the amplification unit is not saturated even where the amplification factor is caused to be higher than the present amplification factor, based on the comparison result of the comparison unit.

Abstract: According to one embodiment, a semiconductor integrated circuit includes: a CDS (Correlated Double Sampling) circuit; and an adjustment voltage generator. The CDS circuit has a first capacitor and a second capacitor. The first capacitor has a first electrode and a second electrode. The second capacitor has a third electrode and a fourth electrode. The CDS circuit is configured to hold a voltage corresponding to light intensity as a signal voltage. The adjustment voltage generator is configured to supply an adjustment voltage to the CDS circuit. A first signal voltage is supplied to the first electrode, and a second signal voltage is supplied to the third electrode. The second electrode and the fourth electrode are commonly connected and supplied with the adjustment voltage from the adjustment voltage generator.

Abstract: A memory cell stores therein data, a dummy cell replicates an operation of the memory cell, a write control unit makes the dummy cell to perform writing in synchronization with write timing of the memory cell, and a row decoder performs opening and closing of a word line that performs a row selection of the memory cell based on a monitored result of a write condition of the dummy cell.

Abstract: According to one embodiment, a dummy cell simulates an operation of a memory cell. A main dummy bit line transmits a signal read out from the dummy cell. An inverter makes a sense amplifier circuit to operate based on a potential of the main dummy bit line. n (n is a positive integer) number of auxiliary dummy bit lines are provided. A switching element connects at least one of the n number of auxiliary dummy bit lines to the main dummy bit line.

Abstract: According to one embodiment, a dummy cell simulates an operation of a memory cell. A main dummy bit line transmits a signal read out from the dummy cell. An inverter makes a sense amplifier circuit to operate based on a potential of the main dummy bit line. n (n is a positive integer) number of auxiliary dummy bit lines are provided. A switching element connects at least one of the n number of auxiliary dummy bit lines to the main dummy bit line.

Abstract: According to one embodiment, a certain amount of data is held in the memory cells, and after a state of the data held in the memory cell is transferred into an indefinite state, data autonomously held in the memory cell is read, and a change of the threshold voltage of transistors is diagnosed on the basis of the distribution of the data autonomously held in the memory cell.

Abstract: A semiconductor memory device of an embodiment includes memory cells 2, a write-back determining unit 7, and a read controller 8. Each memory cell 2 is capable of writing and reading through different paths. The write-back determining unit 7 determines whether or not to perform the write-back for a non-selected column, at the time of the write for a selected column. On the basis of the determination result of the write-back determining unit 7, the read controller 8 controls the read of the data used in the write-back for the non-selected column.

Abstract: According to the embodiments, a memory cell stores therein data, a dummy cell replicates an operation of the memory cell, a write control unit makes the dummy cell to perform writing in synchronization with write timing of the memory cell, and a row decoder performs opening and closing of a word line that performs a row selection of the memory cell based on a monitored result of a write condition of the dummy cell.

Abstract: A semiconductor device has a first MOS transistor being connected between a signal terminal and a first power supply line and having a gate connected to a second power supply line; a first capacitive element connected between the signal terminal and the second power supply line; a second MOS transistor being connected between the signal terminal and the second power supply line and having a gate connected to a first terminal; a third MOS transistor being connected between the first power supply line and the first terminal and having a gate connected to the second power supply line; a fourth MOS transistor being connected between the first terminal and a second terminal and having a gate connected to the second power supply line; a second capacitive element connected between the first power supply line and the second terminal; and a fifth MOS transistor being connected between the second terminal and the second power supply line.

Abstract: A semiconductor integrated circuit device, has a semiconductor substrate; and a first transistor of a first conductivity type and a second transistor of the first conductivity type, the transistors being connected in series between a first power supply line and a first substrate well provided on the semiconductor substrate, the semiconductor integrated circuit device further comprising a first transistor of a second conductivity type and a second transistor of the second conductivity type, the transistors being connected in series between the second power supply line and a second substrate well provided on the semiconductor substrate.

Abstract: A semiconductor integrated circuit device, has a semiconductor substrate; and a first transistor of a first conductivity type and a second transistor of the first conductivity type, the transistors being connected in series between a first power supply line and a first substrate well provided on the semiconductor substrate, the semiconductor integrated circuit device further comprising a first transistor of a second conductivity type and a second transistor of the second conductivity type, the transistors being connected in series between the second power supply line and a second substrate well provided on the semiconductor substrate.

Abstract: A semiconductor integrated circuit comprising: a logic section having a plurality of first transistors; a second transistor, having source and drain electrodes connected between a first reference voltage line and a first reference voltage line side terminal of the logic section, and having a gate electrode to which a control signal for controlling whether to supply a power source voltage to the logic section is inputted; a third transistor having a source and drain electrode connected between an output terminal of the logic section and a second reference voltage line, wherein the third transistor turns off when the second transistor turns on, and turns on when the second transistor turns off; and a control section, connected to a gate electrode of the third transistor, and performing on/off control of the third transistor.