Abstract: In measuring pattern with large process fluctuation, correct measurement cannot be carried out if noises, such as pattern that is not the subject to be measured, and dirt, are present in periphery of pattern to be measured in previously registered measurement region. Among the image data of sample, predetermined region aligned by pattern matching is set as region not to be measured that is excluded from subjects of pattern measurement. For example, in measuring pattern with large process fluctuation, only region including pattern with small process fluctuation is used in pattern matching, while in measuring the pattern, predetermined region, which was used in pattern matching and aligned, is set as region not to be measured. Stable pattern measurement can be easily carried out with respect to pattern with large process fluctuation, without being affected by region where measurement region and region not to be measured overlap with each other.

Abstract: Provided is a method for determining the magnification of a pattern searching template of a scanning electron microscope. The determining method comprises: acquiring a first image initially at a first magnification; then acquiring a second image which contains a pattern image displayed on the first image at a second magnification lower than the first magnification; making the size of the first image coincident with the size of a third image which cut out a portion of the second image; thereafter determining the correlation value between the first image and the third image; and setting the second magnification as the magnification of a pattern searching template, in the case where the correlation value is equal to or higher than a predetermined value. As a result, a condition for acquiring a search area can be properly set, when pattern recognition is performed by means of the template.

Abstract: A method and apparatus suitable for determining the concavity and convexity of line and space patterns formed on a sample. A profile is formed based on a charged-particle beam scan, the profile having a peak. When one foot portion of the peak converges more gradually than the other foot portion, a portion of the sample corresponding to the one foot portion is determined to be a convex portion. Alternatively, when one foot portion of the peak converges more steeply than the other foot portion, a portion of the sample corresponding to the one foot portion is determined to be a concave portion.

Abstract: The present invention achieves the process of easily registering a template which is prepared for a size change in pattern matching for specifying a measurement point, and high-speed pattern matching by which adequate position accuracy can be obtained in measurement. The present invention includes means for automatically calculating the size and position of a positioning template different from a measurement point itself when the measurement point is designated, to display a template having the calculated size and position. The present invention further includes means for performing pattern matching by using all or some of a plurality of divided templates and extracting templates having a similar positional relationship to the original positional relationship.

Abstract: The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.

Abstract: Information indicating the reason for a failure of template matching is provided. Difference information between a first image, which is referred to as a template, and a third image that is selected by the operator from a second image and that is larger than the template is displayed.

Abstract: Provided is a signal processing method for a charged particle beam, and a signal processing device, wherein the amount of beam radiation per unit area is restricted, while maintaining the magnifications in the X and Y directions constant. Proposed, in order to achieve the above-mentioned purpose, is a signal processing method and a signal processing device wherein a plurality of images taken at different places are added up, and an image is formed. Proposed as a specific example is a signal processing method and a signal processing device that obtains a repeating pattern formed on a sample and having the same shape or similar shapes, by moving the field of view, and that forms an image (or a signal waveform) by adding up the obtained signal, and conducts measurements using this image.

Abstract: A pattern matching method for a scanning electron microscope comprises a step of performing pattern matching of only an upper layer pattern between an image (101) in which a pattern consisting of plural layers is represented and a template (104) in which the upper layer pattern of the plural layer pattern is selectively represented, thereby identifying the position of the pattern consisting of the plural layers. Then, information about the upper layer pattern is subtracted from the image (101), thus extracting shape information (108) about the lower layer pattern. Consequently, stable positioning or selective information extraction on a certain layer is enabled regardless of the state of the depths of a pattern formed in three dimensions or of the charge state of a sample.

Abstract: Provided is a method for determining the magnification of a pattern searching template of a scanning electron microscope. The determining method comprises: acquiring a first image initially at a first magnification; then acquiring a second image which contains a pattern image displayed on the first image at a second magnification lower than the first magnification; making the size of the first image coincident with the size of a third image which cut out a portion of the second image; thereafter determining the correlation value between the first image and the third image; and setting the second magnification as the magnification of a pattern searching template, in the case where the correlation value is equal to or higher than a predetermined value. As a result, a condition for acquiring a search area can be properly set, when pattern recognition is performed by means of the template.

Abstract: A scanning electron microscope capable of performing alone the critical dimension measurement and the defect inspection is provided. The scanning electron microscope has a reference image storage unit for storing a reference image transcribing a reference pattern, an inspected image pick-up unit for picking up, on the basis of the reference image, an inspected image transcribing an inspection pattern which pattern-matches with the reference pattern, a critical dimension measuring unit for measuring critical dimensions of the inspection pattern by using the inspected image, and a defect inspection unit for performing an inspection of a defect inside or outside the inspection pattern by comparing the reference image with the inspected image.

Abstract: The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.

Abstract: The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.

Abstract: In an apparatus for obtaining an image by irradiating a charged particle beam on a specimen, a condition of the beam conditioned differently from vertical incidence as in the case of the beam being tilted is required to be adjusted. To this end, the apparatus has a controller for automatically controlling a stigmator, an objective lens and a deflector such that astigmatism is corrected, focus is adjusted and view filed shift is corrected. The controller has a selector for inhibiting at least one of the astigmatism correction, focus adjustment and FOV shift correction from being executed.

Abstract: In an apparatus for obtaining an image by irradiating a charged particle beam on a specimen, a condition of the beam conditioned differently from vertical incidence as in the case of the beam being tilted is required to be adjusted. To this end, the apparatus has a controller for automatically controlling a stigmator, an objective lens and a deflector such that astigmatism is corrected, focus is adjusted and view filed shift is corrected. The controller has a selector for inhibiting at least one of the astigmatism correction, focus adjustment and FOV shift correction from being executed.

Abstract: The present invention achieves the process of easily registering a template which is prepared for a size change in pattern matching for specifying a measurement point, and high-speed pattern matching by which adequate position accuracy can be obtained in measurement. The present invention includes means for automatically calculating the size and position of a positioning template different from a measurement point itself when the measurement point is designated, to display a template having the calculated size and position. The present invention further includes means for performing pattern matching by using all or some of a plurality of divided templates and extracting templates having a similar positional relationship to the original positional relationship.

Abstract: An object of the present invention is to provide an edge detection technique and equipment which are capable of stably detecting an edge by suppressing the influence of noise even in the case where the image is obtained by charged particle radiation equipment, such as a scanning electron microscope and has a low S/N ratio. More specifically, the present invention is to propose a technique and equipment which are configured to determine a peak position (edge) on the basis of the following two edge extraction techniques. That is, the present invention is to propose a technique and equipment wherein at least two peaks are formed by using, as edge detection techniques, for example, one peak detection technique having a relatively high sensitivity and the other peak detection technique which is relatively less susceptible to the influence of noise than the one peak detection technique, and wherein a position where the peaks coincide with each other is determined as a true peak position (edge position).

Abstract: Information indicating the reason for a failure of template matching is provided. Difference information between a first image, which is referred to as a template, and a third image that is selected by the operator from a second image and that is larger than the template is displayed.

Abstract: Information indicating the reason for a failure of template matching is provided. Difference information between a first image, which is referred to as a template, and a third image that is selected by the operator from a second image and that is larger than the template is displayed.

Abstract: An image for measuring a pattern or an image for making positioning for measurement is formed by scanning a sample with a focused electron beam and an estimation value of the image is compared with an image estimation value of a previously gotten reference image, so that focusing of the electron beam is performed again when it is judged that the formed image does not satisfy a predetermined condition by the comparison with the reference image.

Abstract: The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.