Abstract: A photoelectric conversion device according to one embodiment includes a first transistor and a first photoelectric conversion element disposed on a first region, a second transistor disposed on a second region, an insulating layer that covers the first transistor, the first photoelectric conversion element, and the second transistor, and a first terminal that is disposed on the insulating layer, is electrically connected to one of the first transistor and the first photoelectric conversion element, and is connectable to an outside. The second transistor is a dummy transistor of the first transistor.

Abstract: According to an aspect, an active matrix substrate of an X-ray imaging panel includes: an active matrix substrate having a pixel region including a plurality of pixels; and a scintillator that converts X-rays projected onto the X-ray imaging panel to scintillation light. The plurality of pixels include respective photoelectric conversion elements. The active matrix substrate further includes a first planarizing film that covers the photoelectric conversion elements, is formed from an organic resin film, and has a plurality of first contact holes and a first wiring line that is formed in the first contact holes and in a layer upper than the first planarizing film and connected to the photoelectric conversion elements within the first contact holes.

Abstract: A photoelectric conversion panel includes multiple thin-film transistors (TFTs), multiple photodiodes respectively connected the TFTs, a bias line, and a light shielding layer that is formed in a position overlapping at least one of the photodiodes in a plan view. One of the TFTs connected to a photodiode includes an electrically conductive region that connects a drain electrode of the TFT to a source electrode of the TFT.

Abstract: A photoelectric conversion panel includes multiple thin-film transistors (TFTs) formed on an substrate, photodiodes respectively connected to the TFTs, and a metal layer formed on a light incident side of the photodiodes. The metal layer is formed in a position to overlap a subset of the photodiodes in a plan view.

Abstract: A photoelectric conversion device according to one embodiment includes a first transistor and a first photoelectric conversion element disposed on a first region, a second transistor disposed on a second region, an insulating layer that covers the first transistor, the first photoelectric conversion element, and the second transistor, and a first terminal that is disposed on the insulating layer, is electrically connected to one of the first transistor and the first photoelectric conversion element, and is connectable to an outside. The second transistor is a dummy transistor of the first transistor.

Abstract: A photoelectric conversion panel includes: a substrate; a gate line and a data line formed on the substrate; a pixel transistor connected to the gate line and the data line; a photoelectric conversion element connected to the pixel transistor; an electro-static-discharge protection circuit formed on the substrate and connected to a ground; a depletion transistor for protection connected between either the gate line or the data line and the electro-static-discharge protection circuit; and an interrupting voltage supply line configured to apply an interrupting voltage to a gate electrode of the depletion transistor for protection.

Abstract: An active matrix substrate includes a pixel region including a plurality of pixels over a substrate and a frame region outside the pixel region. In the plurality of pixels, a plurality of photoelectric conversion elements are provided. In the frame region, an antistatic hole is provided. The pixel region and a portion of the frame region are covered with an insulating film, and the antistatic hole is bored through the insulating film. An antistatic wire is provided in the frame region so as to surround the pixel region, and has a surface exposed in the antistatic hole.

Abstract: According to an aspect, an active matrix substrate of an X-ray imaging panel includes: an active matrix substrate having a pixel region including a plurality of pixels; and a scintillator that converts X-rays projected onto the X-ray imaging panel to scintillation light. The plurality of pixels include respective photoelectric conversion elements. The active matrix substrate further includes a first planarizing film that covers the photoelectric conversion elements, is formed from an organic resin film, and has a plurality of first contact holes and a first wiring line that is formed in the first contact holes and in a layer upper than the first planarizing film and connected to the photoelectric conversion elements within the first contact holes.

Abstract: A photoelectric conversion device includes a photoelectric conversion area in which photoelectric conversion elements each including a first electrode, a second electrode, and a photoelectric conversion layer, provided between the first electrode and the second electrode, that contains a semiconductor material are provided in a matrix and a guard ring surrounding a periphery of the photoelectric conversion area in a form of a frame. The guard ring has an intermediate layer containing the same semiconductor material as the photoelectric conversion layer.

Abstract: An imaging panel includes an imaging element that is formed on a substrate. The imaging element includes a gate line, a source line, a switching element, a photoelectric conversion element, and a bias line. The gate line and the source line are formed in a layer in which a part of the switching element is formed, a layer in which a part of the photoelectric conversion element is formed, or a layer in which the bias line is formed.

Abstract: A photoelectric conversion panel includes a thin-film transistor provided in a first region, a photoelectric conversion element provided in the first region, a first organic film having a first groove portion provided in a second region, a second organic film having a second groove portion provided in the second region and in a position different from that of the first groove portion, a first inorganic film formed so as to cover the first organic film and cover an inner surface of the first groove portion, and a second inorganic film formed so as to cover the second organic film and cover an inner surface of the second groove portion.

Abstract: An imaging panel includes multiple photoelectric conversion elements respectively mounted in multiple pixels defined by multiple gate lines and data lines formed on a substrate. The imaging panel further includes, outside pixel regions defined by the pixels, multiple first non-linear elements respectively connected to the data lines, multiple first protective wiring respectively connected to the data lines, and a first common wiring connected to the first non-linear elements. Each of the first non-linear elements is connected in a reverse-biased state between the data line connected to the first non-linear element and the first common wiring. Each of the first protective wiring extends to the edge of the substrate.

Abstract: An active matrix substrate includes a photoelectric conversion element 12, a first inorganic insulating film 106, a first planarizing film 107, and a second inorganic insulating film 108a and/or 109 on a substrate 101. The first inorganic insulating film 106, the first planarizing film 107, and the second inorganic insulating film 108a and/or 109 are provided up to an end P2 of the substrate. The first inorganic insulating film 106 covers a surface of the photoelectric conversion element 12, the first planarizing film 107 has a tapered portion, and an angle ? between the tapered portion and the first inorganic insulating film 106 is an acute angle. The second inorganic insulating film 108a and/or 109 covers the first planarizing film 107.

Abstract: An imaging panel includes an imaging element that is formed on a substrate. The imaging element includes a gate line, a source line, a switching element, a photoelectric conversion element, and a bias line. The gate line and the source line are formed in a layer in which a part of the switching element is formed, a layer in which a part of the photoelectric conversion element is formed, or a layer in which the bias line is formed.

Abstract: An imaging panel includes an active matrix substrate that has a plurality of pixels each provided with a photoelectric conversion element, and the pixels each include a first electrode provided at a first surface of the photoelectric conversion element, a first flattening film provided above the photoelectric conversion element and the first electrode, and a bias conductive part provided below the first flattening film. The bias conductive part is connected to the first electrode and applies bias voltage to the first electrode. The first flattening film has no opening in a region overlapped with a pixel region.

Abstract: An active matrix substrate includes a photoelectric conversion element 12, a first planarizing film 107, a first inorganic insulating film 108a, and a bias wire 16. The first planarizing film 107 covers the photoelectric conversion element 12 and has a first opening 107h at a position at which the first opening 107h overlaps with the photoelectric conversion element 12 in plan view. The first inorganic insulating film 108a has a second opening on an inner side of the first opening h and covers a surface of the first planarizing film 107. The bias wire 16 is provided on a first inorganic insulating film 108a and is connected to the photoelectric conversion element 12 via the second opening CH2.

Abstract: Provided are an X-ray imaging panel capable of suppressing a leak current of a photoelectric conversion layer while reducing the number of steps for manufacturing the imaging panel, and a method for manufacturing the same. An imaging panel 1 generates an image based on scintillation light obtained from X-rays passing through a subject. The imaging panel 1 is provided with a thin film transistor 13, passivation films 103 and 104 covering the thin film transistor 13, a photoelectric conversion layer 15 converting scintillation light into a charge, an upper electrode 16, and a lower electrode 14 connected to the thin film transistor 13, on a substrate 101. End portions of the lower electrode 14 are disposed on an inner side than the end portions of the photoelectric conversion layer 15. The lower electrode 14 and the thin film transistor 13 are connected to each other via a contact hole CH1 formed in the passivation films 103 and 104, in a region in which the photoelectric conversion layer 15 is provided.

Abstract: An active matrix substrate includes a photoelectric conversion element in a pixel P defined by a gate line and a data line. The photoelectric conversion element is connected with a bias line, and the bias line is connected with a bias terminal that supplies a bias voltage to the bias line. The bias terminal is connected with a first protection circuit that is formed with a nonlinear element. The first protection circuit is connected in a reverse-biased state between a first line to which a predetermined voltage higher than the bias voltage is supplied, and the bias terminal.

Abstract: An imaging panel includes: a photoelectric converting element on a substrate; a first wiring layer that does not overlap the element in plan view and that is provided more adjacent to the substrate than an anode of the element; and a second wiring layer provided at an opposite side to the substrate with respect to the element. A first insulating layer that overlaps the element and the first wiring layer in plan view is provided between the wiring layers. First and second openings that penetrate the first insulating layer are provided, the wiring layers are connected in the first opening, and the anode and the second wiring layer are connected in the second opening. An electrically independent adjustment metal layer is arranged at a position that overlaps the first opening in plan view and that is more adjacent to the substrate than the first wiring layer.

Abstract: An active matrix substrate includes a pixel region including a plurality of pixels over a substrate and a frame region outside the pixel region. In the plurality of pixels, a plurality of photoelectric conversion elements are provided. In the frame region, an antistatic hole is provided. The pixel region and a portion of the frame region are covered with an insulating film, and the antistatic hole is bored through the insulating film. An antistatic wire is provided in the frame region so as to surround the pixel region, and has a surface exposed in the antistatic hole.