Patents by Inventor Fumio Murabayashi

Fumio Murabayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5001365
    Abstract: A semiconductor integrated circuit device having a plurality of logic circuits integrated on a semiconductor substrate is provided which can operate with a power source potential difference substantially less than 5 V. The logic circuit includes a bipolar transistor having a base and its collector-emitter current path coupled between a first power source terminal and an output terminal, together with at least one field effect transistor having its gate responsive to an input signal applied to an input terminal and its source-drain current path coupled between the first power source terminal and the base of the bipolar transistor. A semiconductor switch means is also provided which is responsive to the input signal applied to the input terminal for performing ON/OFF operations complementary to the ON/OFF operations of the bipolar transistor and which has a current path between its paired main terminals coupled between the output terminal and the second power source terminal.
    Type: Grant
    Filed: March 20, 1989
    Date of Patent: March 19, 1991
    Assignee: Hitachi, Ltd.
    Inventors: Fumio Murabayashi, Yoji Nishio, Shoichi Kotoku, Kozaburo Kurita, Kazuo Kato