Patents by Inventor Fumio Murai
Fumio Murai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6258513Abstract: A semitransparent phase shifting mask has, in the periphery of a pattern element area, a light shielding portion which is formed by a semitransparent phase shifting portion and a transparent portion with the optimal size combination. A pattern is formed employing the semitransparent phase shifting mask.Type: GrantFiled: May 23, 2000Date of Patent: July 10, 2001Assignee: Hitachi, Ltd.Inventors: Norio Hasegawa, Fumio Murai, Katsuya Hayano
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Patent number: 6087074Abstract: A semitransparent phase shifting mask has, in the periphery of a pattern element area, a light shielding portion which is formed by a semitransparent phase shifting portion and a transparent portion with the optimal size combination. A pattern is formed employing the semitransparent phase shifting mask.Type: GrantFiled: July 23, 1999Date of Patent: July 11, 2000Assignee: Hitachi, Ltd.Inventors: Norio Hasegawa, Fumio Murai, Katsuya Hayano
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Patent number: 6057081Abstract: In order that reaction products of low vapor pressure may be prevented from being deposited on the side wall of a predetermined pattern when this pattern is to be formed by dry-etching a Pt film or a PZT film, a resist mask 54 having a rounded outer periphery at its head is used when the Pt film 53 deposited on a semiconductor substrate 50 is to be dry-etched. After this dry-etching, moreover, an overetching of a proper extent is performed to completely remove the side wall deposited film 55 which is left on the side of the pattern. The resist mask 54 is formed by exposing and developing a benzophenone novolak resist and subsequently by heating to set it while irradiating it, if necessary, with ultraviolet rays.Type: GrantFiled: September 22, 1997Date of Patent: May 2, 2000Assignee: Hitachi, Ltd.Inventors: Takashi Yunogami, Shunji Sasabe, Kazuyuki Suko, Jun Abe, Takao Kumihashi, Fumio Murai
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Patent number: 6013398Abstract: A semitransparent phase shifting mask has, in the periphery of a pattern element area, a light shielding portion which is formed by a semitransparent phase shifting portion and a transparent portion with the optimal size combination. A pattern is formed employing the semitransparent phase shifting mask.Type: GrantFiled: November 10, 1998Date of Patent: January 11, 2000Assignee: Hitachi, Ltd.Inventors: Norio Hasegawa, Fumio Murai, Katsuya Hayano
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Patent number: 5851703Abstract: A semitransparent phase shifting mask has, in the periphery of a pattern element area, a light shielding portion which is formed by a semitransparent phase shifting portion and a transparent portion with the optimal size combination. A pattern is formed employing the semitransparent phase shifting mask.Type: GrantFiled: August 1, 1997Date of Patent: December 22, 1998Assignee: Hitachi, Ltd.Inventors: Norio Hasegawa, Fumio Murai, Katsuya Hayano
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Patent number: 5757409Abstract: Selective pattern exposure with high reliability is made possible by a desired pattern of repeated pattern and a non-repeated pattern. Exposure technology is obtained to enable improvement of preparation efficiency of pattern data and to secure inspection of an aperture pattern. With the invention, an electron beam is used as focused beam, and a pattern exposure apparatus of a batch transfer system for transferring repeated pattern and non-repeated pattern of plural graphics of a semiconductor integrated circuit or the like comprises an EB drawing section for controlling the beam and irradiating beam onto a sample, a control I/O section, a drawing control section and a data storage section. In the EB drawing section, a semiconductor wafer is mounted on a platform, and in the path of the electron beam from the electron beam source to the stage, a first mask, a blanking electrode, an electron lens, a first deflector, a second deflector, a second mask and a third deflector are installed.Type: GrantFiled: May 10, 1996Date of Patent: May 26, 1998Assignee: Hitachi, Ltd.Inventors: Yoshihiko Okamoto, Haruo Yoda, Ikuo Takada, Yukinobu Shibata, Akira Hirakawa, Norio Saitou, Shinji Okazaki, Fumio Murai
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Patent number: 5656400Abstract: A semitransparent phase shifting mask has, in the periphery of a pattern element area, a light shielding portion which is formed by a semitransparent phase shifting portion and a transparent portion with the optimal size combination. A pattern is formed employing the semitransparent phase shifting mask.Type: GrantFiled: August 20, 1996Date of Patent: August 12, 1997Assignee: Hitachi, Ltd.Inventors: Norio Hasegawa, Fumio Murai, Katsuya Hayano
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Patent number: 5589270Abstract: Electrification is suppressed with a water-soluble electrification-suppressing film having an electron conductivity and comprising a polymer resin. A high electrification-suppressing effect which is also high in vacuum can be easily obtained by using the electrification-suppressing film with less contamination.Type: GrantFiled: June 1, 1995Date of Patent: December 31, 1996Assignees: Hitachi, Ltd., Showa Denko K.K.Inventors: Fumio Murai, Yasunori Suzuki, Hideki Tomozawa, Ryuma Takashi, Yoshihiro Saida, Yoshiaki Ikenoue
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Patent number: 5578421Abstract: A semitransparent phase shifting mask has, in the periphery of a pattern element area, a light shielding portion which is formed by a semitransparent phase shifting portion and a transparent portion with the optimal size combination. A pattern is formed employing the semitransparent phase shifting mask.Type: GrantFiled: April 7, 1995Date of Patent: November 26, 1996Assignee: Hitachi, Ltd.Inventors: Norio Hasegawa, Fumio Murai, Katsuya Hayano
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Patent number: 5557314Abstract: Selective pattern exposure with high reliability is made possible by a desired pattern of repeated pattern and a non-repeated pattern. Exposure technology is obtained to enable improvement of preparation efficiency of pattern data and to secure inspection of an aperture pattern. With the invention, an electron beam is used as focused beam, and a pattern exposure apparatus of a batch transfer system for transferring repeated pattern and non-repeated pattern of plural graphics of a semiconductor integrated circuit or the like comprises an EB drawing section for controlling the beam and irradiating beam onto a sample, a control I/O section, a drawing control section and a data storage section. In the EB drawing section, a semiconductor wafer is mounted on a platform, and in the path of the electron beam from the electron beam source to the stage, a first mask, a blanking electrode, an electron lens, a first deflector, a second deflector, a second mask and a third deflector are installed.Type: GrantFiled: June 16, 1993Date of Patent: September 17, 1996Assignee: Hitachi, Ltd.Inventors: Yoshihiko Okamoto, Haruo Yoda, Ikuo Takada, Yukinobu Shibata, Akira Hirakawa, Norio Saitou, Shinji Okazaki, Fumio Murai
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Patent number: 5441849Abstract: Electrical charge accumulation caused by exposure to a charged particle beam during the formation of latent image pattern can be reduced and thus the positional deviation of the pattern by using a bottom-resist layer comprising a radiation-induced conductive composition. Highly integrated semiconductor device can be made easily and in high yields. The positional deviation can further be reduced by exposing a charge particle beam patterning apparatus substantially simultaneously with an actinic radiation such as ultraviolet light, X-ray, and infrared light.Type: GrantFiled: September 8, 1993Date of Patent: August 15, 1995Assignees: Hitachi, Ltd., Hitachi Chemical CompanyInventors: Hiroshi Shiraishi, Takumi Ueno, Fumio Murai, Hajime Hayakawa, Asao Isobe
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Patent number: 5437893Abstract: Electrification is suppressed with a water-soluble electrification-suppressing film having an electron conductivity and comprising a polymer resin. A high electrification-suppressing effect which is also high in vacuum can be easily obtained by using the electrification-suppressing film with less contamination.Type: GrantFiled: April 26, 1993Date of Patent: August 1, 1995Assignees: Hitachi, Ltd, Showa Denko K. K.Inventors: Fumio Murai, Yasunori Suzuki, Hideki Tomozawa, Ryuma Takashi, Yoshihiro Saida, Yoshiaki Ikenoue
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Patent number: 5429896Abstract: A semitransparent phase shifting mask has, in the periphery of a pattern element area, a light shielding portion which is formed by a semitransparent phase shifting portion and a transparent portion with the optimal size combination. A pattern is formed employing the semitransparent phase shifting mask.Type: GrantFiled: December 7, 1993Date of Patent: July 4, 1995Assignee: Hitachi, Ltd.Inventors: Norio Hasegawa, Fumio Murai, Katsuya Hayano
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Patent number: 5350485Abstract: A lithographic method for forming a mask pattern is useful for etching wiring or insulator layers on a substrate. A catalyst generation layer and a latent image formation layer are formed on the target layer prior to application of actinic radiation to activate a catalyst in the catalyst generation layer in accordance with a predetermined pattern. The activated catalyst diffuses into the latent image formation layer to form a latent image, which then serves as a mask pattern for etching the catalyst generation layer, latent image formation layer and target layer. The catalyst generation layer may be formed prior to the latent image formation layer, or vice versa. In another embodiment, the catalyst generation layer is formed prior to the radiation step, but the latent image formation layer is formed after application of the actinic radiation.Type: GrantFiled: January 26, 1993Date of Patent: September 27, 1994Assignees: Hitachi, Ltd., Hitachi Chemical Co., Ltd.Inventors: Hiroshi Shiraishi, Takashi Soga, Fumio Murai, Toshio Sakamizu, Nobuaki Hayashi
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Patent number: 5334845Abstract: In an electron beam exposure method for production very high-integration semiconductor devices and its related apparatus in a conventional method, the exposure is divided into fine divisions and carried out by performing a number of shots. However, by utilizing an aperture stop produced by working a single crystalline silicon thin film finely, exposure of a predetermined range is done by one shot. According to the invention, the exposure can be accomplished by the number of shots which is smaller by about two orders than that of the conventional technique and the throughput can be improved remarkably. Since the shot number does not substantially differ depending on whether patterns are complicated or not, individual steps can be processed within substantially identical time.Type: GrantFiled: November 26, 1990Date of Patent: August 2, 1994Assignee: Hitachi LimitedInventors: Hiroaki Wakabayashi, Yoshinori Nakayama, Fumio Murai, Shinji Okazaki
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Patent number: 5324550Abstract: In forming a resist pattern by forming a resist film containing an acid generator on a spin on glass film or a silicon resin film and subsequent exposure of light, an inhomogeneous distribution of an acid in the resist film caused by the spin on glass film or the silicon resin film is remedied by adding an acid generator beforehand into the spin on glass film or the silicon resin film or by using an organic polymer containing an acid generator. As a result, a profile defect in a cross section of the resist pattern caused by inhomogeneous acid distribution is prevented and the resist pattern has a rectangular cross-sectional shape.Type: GrantFiled: August 12, 1992Date of Patent: June 28, 1994Assignee: Hitachi, Ltd.Inventors: Hidenori Yamaguchi, Fumio Murai, Norio Hasegawa, Toshio Sakamizu, Hiroshi Shiraishi
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Patent number: 5318868Abstract: A photomask which is suitable for a phase shift method and a method for manufacturing a semiconductor device using the photomask is disclosed. The photomask comprises a transparent area, a translucent area and an opaque are arranged in a particular manner relative to a shifter film. In particular, the different elements are arranged so that the lowering of intensity and the amplitude of a transmitted light in the transparent area caused by an unnecessary peripheral part of a shifter film are smaller than the lowering of the intensity and the amplitude of a transmitted light through a transparent area. This serves to prevent an undesirable influence of the unnecessary peripheral part of so that a shifter film can reading be prevented, and a connected pattern can be formed.Type: GrantFiled: May 15, 1992Date of Patent: June 7, 1994Assignee: Hitachi, Ltd.Inventors: Norio Hasegawa, Fumio Murai
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Patent number: 5317168Abstract: A superconducting field effect transistor which is very small in size and high in dimensional accuracy, has a first layer of material forming a control electrode and a second layer of another material is disposed on said first layer. A width of said first layer in a direction toward a superconducting source electrode and a superconducting drain electrode is narrower than a width of the second layer in the same direction. Polycrystalline silicon may be used as the control electrode while the second layer can be made of silicon nitride. Furthermore, a side surface of the control electrode may be coated with an insulator film. Accordingly, the above transistor has a fine structure gate electrode part that can be fabricated easily and accurately.Type: GrantFiled: November 19, 1992Date of Patent: May 31, 1994Assignee: Hitachi, Ltd.Inventors: Toshikazu Nishino, Ushio Kawabe, Fumio Murai, Tokuo Kure, Mutsuko Hatano, Haruhiro Hasegawa
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Patent number: 5278421Abstract: The present application relates to a method and an apparatus for forming a pattern, in which a plane on which a pattern on a sample is traced is decomposed into predetermined partial regions; the pattern density in each of the partial regions is stored in data storing means as pattern density map data; and the irradiation energy amount of a charged particle beam is corrected on the basis of the pattern density map data to correct shortage and excess in the exposure dose due to roughness and fineness of the pattern, i.e. the proximity effect. Further, the present application relates to a method and an apparatus for forming a pattern, in which, when one or a plurality of layers located under the layer on which the pattern should be formed have patterns, influences of the underlayers on the proximity effect are taken into account.Type: GrantFiled: June 18, 1992Date of Patent: January 11, 1994Assignee: Hitachi, Ltd.Inventors: Haruo Yoda, Fumio Murai
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Patent number: 5256454Abstract: Electrification is suppressed with a water-soluble electrification-suppressing film having an electron conductivity and comprising a polymer resin. A high electrification-suppressing effect which is also high in vacuum can be easily obtained by using the electrification-suppressing film with less contamination.Type: GrantFiled: May 30, 1991Date of Patent: October 26, 1993Assignees: Hitachi, Ltd., Showa Denko K.K. CorporationsInventors: Fumio Murai, Yasunori Suzuki, Hideki Tomozawa, Ryuma Takashi, Yoshihiro Saida, Yoshiaki Ikenoue