Abstract: The invention provides a gold-supporting catalyst comprising gold nanoparticles and a carrier consisting of porous ceramic obtained by firing a mixture comprising an aluminum compound, a lime component, and a plastic clay containing 1% by mass or less of feldspars and quartz, wherein the gold nanoparticles are supported in an amount of 0.01 to 10 parts by mass on the carrier based on 100 parts by mass of the carrier.

Abstract: A piezoelectric material includes: an oxide containing Na, Ba, Nb, Ti, and Mn, in which the oxide has a perovskite-type structure, a total amount of metal elements other than Na, Ba, Nb, Ti, and Mn contained in the piezoelectric material is 0.5 mol % or less with respect to a total amount of Na, Ba, Nb, Ti, and Mn, a molar ratio x of Ti to a total molar amount of Nb and Ti is 0.05?x?0.12, a molar ratio y of Na to Nb is 0.93?y?0.98, a molar ratio z of Ba to Ti is 1.09?z?1.60, a molar ratio m of Mn to the total molar amount of Nb and Ti is 0.0006?m?0.0030, and 1.07?y×z?1.50 is satisfied.

Abstract: A lead-free piezoelectric material includes perovskite-type metal oxide containing Na, Nb, Ba, Ti, and Mg and indicates excellent piezoelectric properties. The piezoelectric material satisfies the following relational expression (1): 0.430?a?0.460, 0.433?b?0.479, 0.040?c?0.070, 0.0125?d?0.0650, 0.0015?e?0.0092, 0.9×3e?c?d?1.1×3e, a+b+c+d+e=1, where a, b, c, d, and e denote the relative numbers of Na, Nb, Ba, Ti, and Mg atoms, respectively.

Abstract: Provided is a lead-free piezoelectric material reduced in dielectric loss tangent, and achieving both a large piezoelectric constant and a large mechanical quality factor. A piezoelectric material according to at least one embodiment of the present disclosure is a piezoelectric material including a main component formed of a perovskite-type metal oxide represented by the general formula (1): Nax+s(1?y)(BiwBa1?s?w)1?yNbyTi1?yO3 (where 0.84?x?0.92, 0.84?y?0.92, 0.002?(w+s)(1?y)?0.035, and 0.9?w/s?1.1), and a Mn component, wherein the content of the Mn is 0.01 mol % or more and 1.00 mol % or less with respect to the perovskite-type metal oxide.

Abstract: The invention provides a gold-supporting catalyst comprising gold nanoparticles and a carrier consisting of porous ceramic obtained by firing a mixture comprising an aluminum compound, a lime component, and a plastic clay containing 1% by mass or less of feldspars and quartz, wherein the gold nanoparticles are supported in an amount of 0.01 to 10 parts by mass on the carrier based on 100 parts by mass of the carrier.

Abstract: Provided is a coating liquid for forming a piezoelectric thin film containing lead zirconate titanate, the coating liquid including a complex precursor containing at least three kinds of metal elements of Pb, Ti, and Zr, the coating liquid being free from an exothermic peak at a temperature of 450° C. or more, or having a heat generation amount at a temperature of from 400° C. to 450° C., which is larger than a heat generation amount at a temperature of from 450° C. to 500° C., in differential thermal analysis of the coating liquid.

Abstract: Provided is use of an oriented piezoelectric film including of a perovskite-type crystal represented by the following general formula (1): Ba1-xCaxTi1-yZryO3 (0?x?0.2, 0?y?0.2) (1). The oriented piezoelectric film is formed on an oriented underlayer oriented in a (111) plane and contains first crystals oriented in the (111) plane with respect to a film surface and randomly oriented second crystal grains. The first crystal grains have an average grain diameter of from 300 nm to 600 nm and the second crystal grains have an average grain diameter of from 50 nm to 200 nm.

Abstract: Provided is a lead-free piezoelectric material reduced in dielectric loss tangent, and achieving both a large piezoelectric constant and a large mechanical quality factor. A piezoelectric material according to at least one embodiment of the present disclosure is a piezoelectric material including a main component formed of a perovskite-type metal oxide represented by the general formula (1): Nax+s(1?y)(BiwBa1?s?w)1?yNbyTi1?yO3 (where 0.84?x?0.92, 0.84?y?0.92, 0.002?(w+s)(1?y)?0.035, and 0.9?w/s?1.1), and a Mn component, wherein the content of the Mn is 0.01 mol % or more and 1.00 mol % or less with respect to the perovskite-type metal oxide.

Abstract: A lead-free piezoelectric material includes perovskite-type metal oxide containing Na, Nb, Ba, Ti, and Mg and indicates excellent piezoelectric properties. The piezoelectric material satisfies the following relational expression (1): 0.430?a?0.460, 0.433?b?0.479, 0.040?c?0.070, 0.0125?d?0.0650, 0.0015?e?0.0092, 0.9×3e?c?d?1.1×3e, a+b+c+d+e=1, where a, b, c, d, and e denote the relative numbers of Na, Nb, Ba, Ti, and Mg atoms, respectively.

Abstract: A piezoelectric material includes: an oxide containing Na, Ba, Nb, Ti, and Mn, in which the oxide has a perovskite-type structure, a total amount of metal elements other than Na, Ba, Nb, Ti, and Mn contained in the piezoelectric material is 0.5 mol % or less with respect to a total amount of Na, Ba, Nb, Ti, and Mn, a molar ratio x of Ti to a total molar amount of Nb and Ti is 0.05?x?0.12, a molar ratio y of Na to Nb is 0.93?y?0.98, a molar ratio z of Ba to Ti is 1.09?z?1.60, a molar ratio m of Mn to the total molar amount of Nb and Ti is 0.0006?m?0.0030, and 1.07?y×z?1.50 is satisfied.

Abstract: Provided is use of an oriented piezoelectric film including of a perovskite-type crystal represented by the following general formula (1): Ba1-xCaxTi1-yZryO3 (0?x?0.2, 0?y?0.2) (1). The oriented piezoelectric film is formed on an oriented underlayer oriented in a (111) plane and contains first crystals oriented in the (111) plane with respect to a film surface and randomly oriented second crystal grains. The first crystal grains have an average grain diameter of from 300 nm to 600 nm and the second crystal grains have an average grain diameter of from 50 nm to 200 nm.

Abstract: A controller of a cutting apparatus includes: a storage section configured to preliminarily store as a threshold an arbitrary value based on a load current value of a motor detected when a cutting blade is rotated at a predetermined rotational speed while supplying a predetermined quantity of cutting water in a state in which a cutting water supply nozzle is positioned in an appropriate position; and a judgment section configured to judge normality or abnormality according to the result of comparison between a load current value detected when the cutting blade is rotated at the predetermined rotational speed while supplying the predetermined quantity of cutting water and the threshold stored in the storage section.

Abstract: A plurality of semiconductor packages are manufactured by a method that includes the steps of bonding a plurality of semiconductor chips on the front side of a wiring substrate, next supplying a sealing compound to the front side of the wiring substrate to form a resin layer from the sealing component on the front side of the wiring substrate, thereby forming a sealed substrate including the wiring substrate and the resin layer covering the semiconductor chips, next cutting the sealed substrate from the resin layer side by using a V blade to thereby form a V groove along each division line, next dividing the wiring substrate along each V groove to obtain a plurality of individual bare packages, and finally forming an electromagnetic shield layer on the upper surface and an inclined side surface of each bare package, thereby obtaining the plural semiconductor packages.

Abstract: A cutting apparatus including a cutting unit on which a cutting blade is detachably mounted, a control unit for controlling the cutting unit, and a blade case holder for holding a blade case for storing the cutting blade is provided. The blade case is provided with an IC tag allowing reading and writing of use history information of the cutting blade. The control unit is connected to a read/write unit for reading the use history information from the IC tag of the blade case held by the blade case holder and writing the use history information to the IC tag. The use history information read from the IC tag by the read/write unit is reflected in processing conditions for a workpiece to be processed, and the use history information after processing of the workpiece is written to the IC tag by the read/write unit.

Abstract: A plurality of semiconductor packages are manufactured by a method that includes the steps of bonding a plurality of semiconductor chips on the front side of a wiring substrate, next supplying a sealing compound to the front side of the wiring substrate to form a resin layer from the sealing component on the front side of the wiring substrate, thereby forming a sealed substrate including the wiring substrate and the resin layer covering the semiconductor chips, next cutting the sealed substrate from the resin layer side by using a V blade to thereby form a V groove along each division line, next dividing the wiring substrate along each V groove to obtain a plurality of individual bare packages, and finally forming an electromagnetic shield layer on the upper surface and an inclined side surface of each bare package, thereby obtaining the plural semiconductor packages.

Abstract: [Problem] To provide a method for producing a colloidal crystal, wherein the method is easily controlled and is capable of dealing with a wide range of types of colloidal particle. [Solution] The method for producing a colloidal crystal in the present invention is characterized by comprising a preparation step of preparing a colloidal dispersion liquid, in which colloidal particles are dispersed in a liquid comprising an ionic surfactant and a colloidal crystal can be formed due to temperature changes, and a crystallization step of formation of a colloidal crystal by changing the temperature of the colloidal dispersion liquid from a temperature region in which the colloidal crystal is not formed to a temperature region in which the colloidal crystal is formed.

Abstract: A sheet of colloidal crystals immobilized in resin exhibiting intense structural color and allowing easy observation thereof from squarely facing direction against the surface; and application thereof are provided. The sheet includes crystal domains comprising colloidal crystals immobilized in resin. The Bragg reflection intensity resulting from crystal domains according to back reflection spectrum measurement to the sheet surface satisfies the following conditions (1) and (2). (1) When elevation angle from the sheet surface is in a range of at least 60° and less than 90° and measurement is performed at a predetermined azimuth angle on the sheet surface, intensity is not 0 and (2) when elevation angle from the sheet surface is in the range of at least 60° and less than 90° and azimuth dependency on the sheet surface is measured, the intensity exhibits a maximum value at the predetermined azimuth angle.

Abstract: Provided are: a sheet of colloidal crystals immobilized in resin exhibiting intense structural color, enabled to be observed easily from a squarely facing direction against a surface; and use thereof. The sheet of the present invention, assuming a direction perpendicular to part of a surface of a target area including partially the sheet surface is set as a specified axis, satisfies: (1) The target area includes plural inclined back-reflecting crystal-domains crystal domains having colloid particles immobilized in resin and including crystal lattice planes capable of Bragg-back reflecting at least some of components in a visible wavelength range of incident light having greater than 0 incident angle with the specified axis; and (2) By defining an azimuth angle around the specified axis, the inclined back-reflecting crystal-domains are so oriented that intensity of reflected light caused by Bragg back reflection varies depending on the azimuth angle of the incident light.

Abstract: A controller of a cutting apparatus includes: a storage section configured to preliminarily store as a threshold an arbitrary value based on a load current value of a motor detected when a cutting blade is rotated at a predetermined rotational speed while supplying a predetermined quantity of cutting water in a state in which a cutting water supply nozzle is positioned in an appropriate position; and a judgment section configured to judge normality or abnormality according to the result of comparison between a load current value detected when the cutting blade is rotated at the predetermined rotational speed while supplying the predetermined quantity of cutting water and the threshold stored in the storage section.

Abstract: Provided is a coating liquid for forming a piezoelectric thin film containing lead zirconate titanate, the coating liquid including a complex precursor containing at least three kinds of metal elements of Pb, Ti, and Zr, the coating liquid being free from an exothermic peak at a temperature of 450° C. or more, or having a heat generation amount at a temperature of from 400° C. to 450° C., which is larger than a heat generation amount at a temperature of from 450° C. to 500° C., in differential thermal analysis of the coating liquid.