Abstract: The present invention provides an acrylic resin composition containing a polycrystal of colloidal particles of silicon oxide in an acrylic resin that is formed by curing an acrylic monomer liquid at room temperature and/or an acrylic oligomer liquid at room temperature, wherein a mean distance between the colloidal particles in the polycrystal is 140 to 330 nm. The size of the single crystal that constitutes the polycrystal can be controlled by adjusting the content of silicon oxide and/or the additive amount of impurities. An architectural material, a fashion accessory, and an optical material are provided that are formed by using the acrylic resin composition.

Abstract: Provided is a lead-free dielectric ceramics having a low leakage current value, and a bismuth iron oxide powder as a raw material thereof. The bismuth iron oxide powder includes at least: (A) grains including a bismuth iron oxide having a perovskite-type crystal structure; (B) grains including a bismuth iron oxide having a crystal structure classified to a space group Pbam; and (C) grains including a bismuth iron oxide or a bismuth oxide having a crystal structure that is classified to a space group I23. The dielectric ceramics are made of bismuth iron oxide in which the bismuth iron oxide crystals having the crystal structure classified to the space group Pbam are distributed at a grain boundary of crystal grains of the bismuth iron oxide crystals having the perovskite-type crystal structure.

Abstract: Provided is a process for producing colloidal crystals from which a large single crystal reduced in lattice defects and unevenness can be easily produced at low cost without fail. The process for colloidal crystal production comprises: preparing a colloidal polycrystal dispersion in which colloidal crystals precipitate at a given temperature (preparation step); introducing into a vessel The colloidal polycrystal dispersion in the state of containing fine colloidal polycrystals precipitated (introduction step); and melting the colloidal polycrystals and then recrystallizing the molten polycrystals (recrystallization step). The crystals thus obtained have fewer lattice defects and less unevenness than the original polycrystals.

Abstract: A piezoelectric element having a piezoelectric film and one pair of electrodes being in contact with the piezoelectric film on a substrate, wherein the piezoelectric film has a structure in which a lead-containing piezoelectric film and a lead-free piezoelectric film are laminated, and in the piezoelectric film, a layer furthest from the substrate and a layer closest to the substrate are lead-free piezoelectric films.

Abstract: There is disclosed a piezoelectric thin film having less non-uniform portion and holding satisfactory piezoelectric characteristics, a method of manufacturing the film, a piezoelectric element using the piezoelectric thin film, and an ink jet system recording head using the piezoelectric element. In the piezoelectric thin film of perovskite crystals formed on a substrate by a sol-gel process and represented by a general formula Pb(1-x)Lax(ZryTi1-y)O3 (where 0?x<1, 0.05?y?1), a film thickness of the thin film is 1000 nm or more and 4000 nm or less, and a difference between a maximum value and a minimum value of y in an arbitrary portion of the thin film is 0.05 or less.

Abstract: A piezoelectric element including a vibrating plate, a lower electrode, a piezoelectric film and an upper electrode laminated in this order, wherein the lower electrode, the upper electrode and the piezoelectric film are formed by a perovskite type oxide while the vibrating plate is formed by a metal oxide, and a junction interface is substantially absent between the vibrating plate and the lower electrode, between the lower electrode and the piezoelectric film and between the piezoelectric film and the upper electrode.

Abstract: There is disclosed a piezoelectric thin film having less non-uniform portions and holding satisfactory piezoelectric characteristics, a method of manufacturing the film, a piezoelectric element using the piezoelectric thin film, and an ink jet system recording head using the piezoelectric element. In the piezoelectric thin film of perovskite crystals formed on a substrate by a sol-gel process and represented by a general formula Pb(1-x)Lax(ZryTi1-y)O3 (where 0?x<1, 0.05?y?1), a film thickness of the thin film is 1000 nm or more and 4000 nm or less, and a difference between a maximum value and a minimum value of y in an arbitrary portion of the thin film is 0.05 or less.

Abstract: A piezoelectric element having a piezoelectric film and one pair of electrodes being in contact with the piezoelectric film on a substrate, wherein the piezoelectric film has a structure in which a lead-containing piezoelectric film and a lead-free piezoelectric film are laminated, and in the piezoelectric film, a layer furthest from the substrate and a layer closest to the substrate are lead-free piezoelectric films.

Abstract: There is disclosed a piezoelectric thin film having less non-uniform portion and holding satisfactory piezoelectric characteristics, a method of manufacturing the film, a piezoelectric element using the piezoelectric thin film, and an ink jet system recording head using the piezoelectric element. In the piezoelectric thin film of perovskite crystals formed on a substrate by a sol-gel process and represented by a general formula Pb(1-x)Lax(ZryTi1-y)O3 (where 0?x<1, 0.05?y?1), a film thickness of the thin film is 1000 nm or more and 4000 nm or less, and a difference between a maximum value and a minimum value of y in an arbitrary portion of the thin film is 0.05 or less.

Abstract: In a piezoelectric element having a piezoelectric film sandwiched between a lower electrode and an upper electrode, the lower electrode and/or the upper electrode and the piezoelectric film comprise perovskite oxide and a contact interface between the lower electrode and/or the upper electrode and the piezoelectric film does not exist and a region where crystals of the lower electrode and/or the upper electrode and crystals of the piezoelectric film are mixed exists between the lower electrode and/or the upper electrode and the piezoelectric film.

Abstract: A composition for forming a piezoelectric containing a dispersoid obtained from metallic compound, wherein the content of hafnium in the composition is 3,000 ppm or less.

Abstract: A composition for forming a piezoelectric film containing a dispersoid obtained from a metallic compound includes at least one of 1,8-diazabicyclo[5.4.0]-7-undecene, 1,5-diazabicyclo[4.3.0]non-5-ene, and 1,4-diazabicyclo[2.2.2]octane.

Abstract: The invention provides a method for manufacturing a piezoelectric element including a coating step of coating a substrate with a coating liquid for forming the piezoelectric element thereby forming a coated film, a drying step of drying the coated film, a preliminary sintering step of preliminarily sintering the coated film thereby forming an oxide film, a final sintering step of finally sintering the oxide film thereby forming a piezoelectric film, and a cooling step of cooling the piezoelectric film, wherein the steps are executed in the presence of a moisture-containing gas; in the coating step the substrate has a temperature equal to or less than 50° C. and the moisture-containing gas has a relative humidity of 60% RH or less at 25° C.; in the drying step, the substrate has a temperature equal to or less than 200° C. and the relative humidity is 10 to 70% RH; in the preliminary sintering step the substrate has a temperature of 200 to 450° C.

Abstract: A piezoelectric element including a vibrating plate, a lower electrode, a piezoelectric film and an upper electrode laminated in this order, wherein the lower electrode, the upper electrode and the piezoelectric film are formed by a perovskite type oxide while the vibrating plate is formed by a metal oxide, and a junction interface is substantially absent between the vibrating plate and the lower electrode, between the lower electrode and the piezoelectric film and between the piezoelectric film and the upper electrode.

Abstract: A composition for forming a piezoelectric film containing a dispersoid obtained from a metallic compound includes at least one of 1,8-diazabicyclo[5.4.0]-7-undecene, 1,5-diazabicyclo[4.3.0]non-5-ene, and 1,4-diazabicyclo[2.2.2]octane.

Abstract: The invention provides a method for manufacturing a piezoelectric element including a coating step of coating a substrate with a coating liquid for forming the piezoelectric element thereby forming a coated film, a drying step of drying the coated film, a preliminary sintering step of preliminarily sintering the coated film thereby forming an oxide film, a final sintering step of finally sintering the oxide film thereby forming a piezoelectric film, and a cooling step of cooling the piezoelectric film, wherein the steps are executed in the presence of a moisture-containing gas; in the coating step the substrate has a temperature equal to or less than 50° C. and the moisture-containing gas has a relative humidity of 60% RH or less at 25° C.; in the drying step, the substrate has a temperature equal to or less than 200° C. and the relative humidity is 10 to 70% RH; in the preliminary sintering step the substrate has a temperature of 200 to 450° C.

Abstract: A composition for forming piezoelectric film comprising a dispersoid obtained from a metal compound, wherein the total content of the elemental halogens, halogen ions and halogen compounds contained in the composition is 10 ppm or less.

Abstract: A composition for forming a piezoelectric containing a dispersoid obtained from metallic compound, wherein the content of hafnium in the composition is 3,000 ppm or less.

Abstract: In a piezoelectric element having a piezoelectric film sandwiched between a lower electrode and an upper electrode, the lower electrode and/or the upper electrode and the piezoelectric film comprise perovskite oxide and a contact interface between the lower electrode and/or the upper electrode and the piezoelectric film does not exist and a region where crystals of the lower electrode and/or the upper electrode and crystals of the piezoelectric film are mixed exists between the lower electrode and/or the upper electrode and the piezoelectric film.