Abstract: A novel method for forming a metal oxide is provided. The metal oxide is formed using a precursor with a high decomposition temperature while a substrate is heated to higher than or equal to 300° C. and lower than or equal to 500° C. In the formation, plasma treatment, microwave treatment, or heat treatment is preferably performed as impurity removal treatment in an atmosphere containing oxygen. The impurity removal treatment may be performed while irradiation with ultraviolet light is performed. The metal oxide is formed by alternate repetition of precursor introduction and oxidizer introduction. For example, the impurity removal treatment is preferably performed every time the precursor introduction is performed more than or equal to 5 times and less than or equal to 10 times.

Abstract: A novel sputtering target is provided. The sputtering target includes a first region and a second region. The first region contains a first metal oxide containing an element M1 (the element M1 is one or more elements selected from Al, Ga, Si, Mg, Zr, and B). The second region contains a second metal oxide containing indium and zinc. The first region and the second region are separated from each other. Each of the first region and the second region is a crystal grain. A crystal grain boundary is observed between the first region and the second region. The diameter of each of the first region and the second region is greater than or equal to 5 nm and less than or equal to 10 ?m.

Abstract: A semiconductor device that has lower power consumption and is capable of non-destructive reading is provided. The semiconductor device includes a first transistor, a first FTJ element, and a second FTJ element. A first terminal of the first transistor is electrically connected to an output terminal of the first FTJ element and an input terminal of the second FTJ element. In data writing, polarization is caused in each of the first FTJ element and the second FTJ element in accordance with the data. In data reading, voltage with which the polarization does not change is applied between the output terminal of the first FTJ element and the input terminal of the second FTJ element. At this time, the first transistor is turned on, whereby a differential current between current flowing through the first FTJ element and current flowing through the second FTJ element flows through the first transistor.

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. A first conductor is formed over a substrate, a ferroelectric layer is formed over the first conductor, a second conductor is formed over the ferroelectric layer while substrate heating is performed, the ferroelectric layer includes hafnium oxide and zirconium oxide, and heat treatment at 500° C. or higher is not performed after the formation of the second conductor.

Abstract: A method for modifying an insulating film is provided. The method includes a first step of preparing an insulating film containing hydrogen, and a second step of performing microwave treatment on the insulating film to release the hydrogen in the insulating film as water molecules, so that a hydrogen concentration in the insulating film is reduced. Note that the microwave treatment is preferably performed using an oxygen gas and an argon gas at a temperature range of higher than or equal to 200° C. and lower than or equal to 300° C., and the proportion of the flow rate of the oxygen gas to the total of the flow rate of the oxygen gas and the flow rate of the argon gas is preferably greater than 0 % and less than or equal to 50 %.

Abstract: A semiconductor device with a small variation in characteristics is provided. The semiconductor device includes an oxide, a first conductor and a second conductor over the oxide, a first insulator over the first conductor, a second insulator over the second conductor, a third insulator over the first insulator and the second insulator, a fourth insulator over the third insulator, a fifth insulator that is over the oxide and is located between the first conductor and the second conductor; a sixth insulator over the fifth insulator; a seventh insulator over the sixth insulator, and a third conductor over the seventh insulator. The third conductor includes a region overlapping with the oxide, the fifth insulator has a region that is in contact with each of the oxide, the first conductor, the second conductor, and the first to fourth insulators, and the sixth insulator contains hydrogen, nitrogen, oxygen, and silicon.

Abstract: A novel display panel that is highly convenient, useful, or reliable is provided. The display panel includes a display region and includes a first pixel, a second pixel, a third pixel, and a filter. The first pixel emits light with a spectrum having a local maximum at a first wavelength, the second pixel emits light with a spectrum having a local maximum at a second wavelength, and the third pixel emits light with a spectrum having a local maximum at a third wavelength. The filter includes a region overlapping with the first pixel, a region overlapping with the second pixel, and a region overlapping with the third pixel, and the filter has a transmittance spectrum having local minimums at a fourth wavelength and a fifth wavelength. The second wavelength is longer than the first wavelength. The third wavelength is longer than the second wavelength. The fourth wavelength is between the first wavelength and the second wavelength. The fifth wavelength is between the second wavelength and the third wavelength.

Abstract: To display a high-quality video regardless of a usage environment. To provide a display device which is lightweight and less likely to be broken. To reduce power consumption of the display device. The display device includes a first display element, a first transistor connected to the first display element, a second display element, and a second transistor connected to the second display element. The first display element is a reflective display element. The first display element and the first transistor are bonded to the second display element and the second transistor with an adhesive layer. Light from the second display element is extracted to the display surface on the first display element side. The light is condensed or guided by a light-condensing means or a light-guiding means provided in a path of the light from the second display element to the display surface.

Abstract: A display device includes a display panel and a control portion. The control portion has a function of receiving image data, and a function of generating and supplying first data and second data on the basis of the image data. The display panel includes a pixel and an optical element. The pixel includes a first display element and a second display element. The second display element includes a region adjacent to the first display element. The optical element includes a first region overlapping with the second display element. The first region has a function of directing light which enters a region overlapping with the second display element to the first display element. The first display element is a reflective display element. The second display element is a light-emitting element.

Abstract: To display a high-quality video regardless of a usage environment. To provide a display device which is lightweight and less likely to be broken. To reduce power consumption of the display device. The display device includes a first display element, a first transistor connected to the first display element, a second display element, and a second transistor connected to the second display element. The first display element is a reflective display element. The first display element and the first transistor are bonded to the second display element and the second transistor with an adhesive layer. Light from the second display element is extracted to the display surface on the first display element side. The light is condensed or guided by a light-condensing means or a light-guiding means provided in a path of the light from the second display element to the display surface.

Abstract: A light extraction efficiency is increased in a display device having a plurality of display elements. The display device includes a first display element and a second display element over the first display element, and the first display element has a convex-concave shape. The convex-concave shape overlaps with a first opening provided in a reflective electrode of the second display element. A user can see an image that combines the display from the first display element and the display from the second display element. The convex-concave shape increases the light extraction efficiency of the first display element. The second display element is electrically connected to a transistor through a second opening provided in any layer of the first display element. The second display element can be provided close to the first display element.

Abstract: To provide a novel display panel with high convenience or high reliability. The display panel includes a pixel including a functional layer, a first display element, and a second display element. The functional layer includes a pixel circuit and includes a region positioned between the first and second display elements. The pixel circuit is electrically connected to the first and second display elements. The first display element includes a reflective film and is configured to control the intensity of light reflected by the reflective film. The reflective film has a shape that does not block light emitted from the second display element. The second display element includes a light-emitting element and is provided such that display using the second display element can be seen from part of a region where display using the first display element can be seen.

Abstract: A light extraction efficiency is increased in a display device having a plurality of display elements. The display device includes a first display element and a second display element over the first display element, and the first display element has a convex-concave shape. The convex-concave shape overlaps with a first opening provided in a reflective electrode of the second display element. A user can see an image that combines the display from the first display element and the display from the second display element. The convex-concave shape increases the light extraction efficiency of the first display element. The second display element is electrically connected to a transistor through a second opening provided in any layer of the first display element. The second display element can be provided close to the first display element.

Abstract: To display a high-quality video regardless of a usage environment. To provide a display device which is lightweight and less likely to be broken. To reduce power consumption of the display device. The display device includes a first display element, a first transistor connected to the first display element, a second display element, and a second transistor connected to the second display element. The first display element is a reflective display element. The first display element and the first transistor are bonded to the second display element and the second transistor with an adhesive layer. Light from the second display element is extracted to the display surface on the first display element side. The light is condensed or guided by a light-condensing means or a light-guiding means provided in a path of the light from the second display element to the display surface.

Abstract: A display device includes a display panel and a control portion. The control portion has a function of receiving image data, and a function of generating and supplying first data and second data on the basis of the image data. The display panel includes a pixel and an optical element. The pixel includes a first display element and a second display element. The second display element includes a region adjacent to the first display element. The optical element includes a first region overlapping with the second display element. The first region has a function of directing light which enters a region overlapping with the second display element to the first display element. The first display element is a reflective display element. The second display element is a light-emitting element.

Abstract: A photoelectric conversion device in photoelectric conversion in a light-absorption region in a crystalline silicon substrate is efficiently performed is provided. In the photoelectric conversion device, a light-transmitting conductive film which has a high effect of passivation of defects on a silicon surface and improves the reflectance on a back electrode side is provided between the back electrode and the crystalline silicon substrate, The light-transmitting conductive film includes an organic compound and an inorganic compound. The organic compound includes 4-phenyl-4?-(9-phenylfluoren-9-yl)triphenylamine. The inorganic compound includes an oxide of a metal belonging to any of Groups 4 to 8 of the periodic table.

Abstract: A novel film formation apparatus is provided. A novel film formation method and cleaning method is also provided. Further, a novel shadow mask is provided. The inventors have conceived a structure including a film formation chamber and an adhesive layer that is on the inner wall of the film formation chamber and/or on the shadow mask and to which a film formation material is to be attached.

Abstract: It is an object to provide a method of manufacturing a crystalline silicon device and a semiconductor device in which formation of cracks in a substrate, a base protective film, and a crystalline silicon film can be suppressed. First, a layer including a semiconductor film is formed over a substrate, and is heated. A thermal expansion coefficient of the substrate is 6×10?7/° C. to 38×10?7/° C., preferably 6×10?7/° C. to 31.8×10?7/° C. Next, the layer including the semiconductor film is irradiated with a laser beam to crystallize the semiconductor film so as to form a crystalline semiconductor film. Total stress of the layer including the semiconductor film is ?500 N/m to +50 N/m, preferably ?150 N/m to 0 N/m after the heating step.

Abstract: An object is to provide a photoelectric conversion device which has little loss of light absorption in a window layer and has high conversion efficiency. A photoelectric conversion device including a crystalline silicon substrate having n-type conductivity and a light-transmitting semiconductor layer having p-type conductivity between a pair of electrodes is formed. In the photoelectric conversion device, a p-n junction is formed between the crystalline silicon substrate and the light-transmitting semiconductor layer, and the light-transmitting semiconductor layer serves as a window layer. The light-transmitting semiconductor layer includes an organic compound and an inorganic compound. As the organic compound and the inorganic compound, a material having a high hole-transport property and a transition metal oxide having an electron-accepting property are respectively used.

Abstract: It is an object to provide a method of manufacturing a crystalline silicon device and a semiconductor device in which formation of cracks in a substrate, a base protective film, and a crystalline silicon film can be suppressed. First, a layer including a semiconductor film is formed over a substrate, and is heated. A thermal expansion coefficient of the substrate is 6×10?7/° C. to 38×10?7/° C., preferably 6×10?7/° C. to 31.8×10?7/° C. Next, the layer including the semiconductor film is irradiated with a laser beam to crystallize the semiconductor film so as to form a crystalline semiconductor film. Total stress of the layer including the semiconductor film is ?500 N/m to +50 N/m, preferably ?150 N/m to 0 N/m after the heating step.