Patents by Inventor Fumitomo Watanabe

Fumitomo Watanabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11742252
    Abstract: Several aspects of the present technology are directed toward fan-out packaged semiconductor devices having an integrated shield. The shield can include a conductive wall and a conductive cap over a redistribution structure. The shield can surround or at least partially enclose circuits placed or formed on the redistribution structure. The circuits and/or the conductive cap can be covered by an encapsulant, and the conductive cap can be on an upper surface of an encapsulant.
    Type: Grant
    Filed: September 23, 2021
    Date of Patent: August 29, 2023
    Assignee: Micron Technology, Inc.
    Inventors: Fumitomo Watanabe, Keiyo Kusanagi
  • Patent number: 11335667
    Abstract: Stacked semiconductor die assemblies with die substrate extensions are disclosed herein. In one embodiment, a semiconductor die assembly can include a package substrate, a first die mounted to the package substrate, and a second die mounted to the first die. The first die includes a first die substrate, and the second die includes a second die substrate attached to the first die substrate. At least one of the first and second dies includes a semiconductor substrate and a die substrate extension adjacent the semiconductor substrate. The die substrate extension comprises a mold material that at least partially defines a planform.
    Type: Grant
    Filed: February 3, 2020
    Date of Patent: May 17, 2022
    Assignee: Micron Technology, Inc.
    Inventors: Fumitomo Watanabe, Keiyo Kusanagi
  • Publication number: 20220013421
    Abstract: Several aspects of the present technology are directed toward fan-out packaged semiconductor devices having an integrated shield. The shield can include a conductive wall and a conductive cap over a redistribution structure. The shield can surround or at least partially enclose circuits placed or formed on the redistribution structure. The circuits and/or the conductive cap can be covered by an encapsulant, and the conductive cap can be on an upper surface of an encapsulant.
    Type: Application
    Filed: September 23, 2021
    Publication date: January 13, 2022
    Inventors: Fumitomo Watanabe, Keiyo Kusanagi
  • Patent number: 11158554
    Abstract: Several aspects of the present technology are directed toward fan-out packaged semiconductor devices having an integrated shield to protect against electromagnetic interference and methods of manufacturing such devices. The shield can be constructed by forming a conductive wall on a redistribution structure and disposing a conductive cap on an upper surface of an encapsulant. The conductive wall and the conductive cap are electrically connected to each other. By forming the conductive wall directly on the redistribution structure and separately disposing the conductive cap onto an upper surface of the encapsulant, an electromagnetic shield can be readily formed using wafer-level or panel-level processing techniques that are efficient and cost-effective. Several embodiments of semiconductor devices in accordance with the present technology accordingly shield the integrated circuitry of semiconductor dies from electromagnetic interference.
    Type: Grant
    Filed: October 18, 2019
    Date of Patent: October 26, 2021
    Assignee: Micron Technology, Inc.
    Inventors: Fumitomo Watanabe, Keiyo Kusanagi
  • Publication number: 20210296216
    Abstract: A semiconductor device including a semiconductor chip, a plurality of leads and a sealing layer is disclosed. The lead includes a recess portion formed in the bottom surface at the outer side and a protruding portion formed in the top surface at the outer side. The protruding portion is formed to project from the top surface of the lead toward the sealing layer. A lead frame used in the semiconductor device and a method for manufacturing the semiconductor device are also disclosed.
    Type: Application
    Filed: March 17, 2020
    Publication date: September 23, 2021
    Inventors: Toshitomo Fujiwara, Fumitomo Watanabe
  • Publication number: 20210225805
    Abstract: Semiconductor device assemblies with molded support substrates and associated methods are disclosed herein. In one embodiment, a semiconductor device assembly includes a support substrate, a first semiconductor die embedded within the support substrate, a second semiconductor die coupled to the support substrate, and a third semiconductor die coupled to the support substrate. The assembly can also include a redistribution network formed on a first and/or second side of the support substrate, and a plurality of conductive contacts electrically coupled to at least one of the first, second or third semiconductor dies.
    Type: Application
    Filed: April 7, 2021
    Publication date: July 22, 2021
    Inventors: Mitsuhisa Watanabe, Fumitomo Watanabe, Masanori Yoshida
  • Patent number: 10998290
    Abstract: Semiconductor device assemblies with molded support substrates and associated methods are disclosed herein. In one embodiment, a semiconductor device assembly includes a support substrate, a first semiconductor die embedded within the support substrate, a second semiconductor die coupled to the support substrate, and a third semiconductor die coupled to the support substrate. The assembly can also include a redistribution network formed on a first and/or second side of the support substrate, and a plurality of conductive contacts electrically coupled to at least one of the first, second or third semiconductor dies.
    Type: Grant
    Filed: January 9, 2019
    Date of Patent: May 4, 2021
    Assignee: Micron Technology, Inc.
    Inventors: Mitsuhisa Watanabe, Fumitomo Watanabe, Masanori Yoshida
  • Publication number: 20200321316
    Abstract: Stacked semiconductor die assemblies with die substrate extensions are disclosed herein. In one embodiment, a semiconductor die assembly can include a package substrate, a first die mounted to the package substrate, and a second die mounted to the first die. The first die includes a first die substrate, and the second die includes a second die substrate attached to the first die substrate. At least one of the first and second dies includes a semiconductor substrate and a die substrate extension adjacent the semiconductor substrate. The die substrate extension comprises a mold material that at least partially defines a planform.
    Type: Application
    Filed: February 3, 2020
    Publication date: October 8, 2020
    Inventors: Fumitomo Watanabe, Keiyo Kusanagi
  • Publication number: 20200051882
    Abstract: Several aspects of the present technology are directed toward fan-out packaged semiconductor devices having an integrated shield to protect against electromagnetic interference and methods of manufacturing such devices. The shield can be constructed by forming a conductive wall on a redistribution structure and disposing a conductive cap on an upper surface of an encapsulant. The conductive wall and the conductive cap are electrically connected to each other. By forming the conductive wall directly on the redistribution structure and separately disposing the conductive cap onto an upper surface of the encapsulant, an electromagnetic shield can be readily formed using wafer-level or panel-level processing techniques that are efficient and cost-effective. Several embodiments of semiconductor devices in accordance with the present technology accordingly shield the integrated circuitry of semiconductor dies from electromagnetic interference.
    Type: Application
    Filed: October 18, 2019
    Publication date: February 13, 2020
    Inventors: Fumitomo Watanabe, Keiyo Kusanagi
  • Patent number: 10553566
    Abstract: Stacked semiconductor die assemblies with die substrate extensions are disclosed herein. In one embodiment, a semiconductor die assembly can include a package substrate, a first die mounted to the package substrate, and a second die mounted to the first die. The first die includes a first die substrate, and the second die includes a second die substrate attached to the first die substrate. At least one of the first and second dies includes a semiconductor substrate and a die substrate extension adjacent the semiconductor substrate. The die substrate extension comprises a mold material that at least partially defines a planform.
    Type: Grant
    Filed: October 8, 2018
    Date of Patent: February 4, 2020
    Assignee: Micron Technology, Inc.
    Inventors: Fumitomo Watanabe, Keiyo Kusanagi
  • Patent number: 10453762
    Abstract: Several aspects of the present technology are directed toward fan-out packaged semiconductor devices having an integrated shield to protect against electromagnetic interference and methods of manufacturing such devices. The shield can be constructed by forming a conductive wall on a redistribution structure and disposing a conductive cap on an upper surface of an encapsulant. The conductive wall and the conductive cap are electrically connected to each other. By forming the conductive wall directly on the redistribution structure and separately disposing the conductive cap onto an upper surface of the encapsulant, an electromagnetic shield can be readily formed using wafer-level or panel-level processing techniques that are efficient and cost-effective. Several embodiments of semiconductor devices in accordance with the present technology accordingly shield the integrated circuitry of semiconductor dies from electromagnetic interference.
    Type: Grant
    Filed: July 28, 2017
    Date of Patent: October 22, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Fumitomo Watanabe, Keiyo Kusanagi
  • Publication number: 20190148338
    Abstract: Semiconductor device assemblies with molded support substrates and associated methods are disclosed herein. In one embodiment, a semiconductor device assembly includes a support substrate, a first semiconductor die embedded within the support substrate, a second semiconductor die coupled to the support substrate, and a third semiconductor die coupled to the support substrate. The assembly can also include a redistribution network formed on a first and/or second side of the support substrate, and a plurality of conductive contacts electrically coupled to at least one of the first, second or third semiconductor dies.
    Type: Application
    Filed: January 9, 2019
    Publication date: May 16, 2019
    Inventors: Mitsuhisa Watanabe, Fumitomo Watanabe, Masanori Yoshida
  • Patent number: 10217719
    Abstract: Semiconductor device assemblies with molded support substrates and associated methods are disclosed herein. In one embodiment, a semiconductor device assembly includes a support substrate formed from a molded material, a first semiconductor die at least partially embedded within the support substrate, a plurality of interconnects extending at least partially through the molded material, a second semiconductor die coupled to the support substrate, and a third semiconductor die coupled to the support substrate. The assembly can also include a redistribution network formed on a first and/or second side of the support substrate, and a plurality of conductive contacts electrically coupled to at least one of the first, second and third semiconductor dies.
    Type: Grant
    Filed: April 6, 2017
    Date of Patent: February 26, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Mitsuhisa Watanabe, Fumitomo Watanabe, Masanori Yoshida
  • Publication number: 20190043840
    Abstract: Stacked semiconductor die assemblies with die substrate extensions are disclosed herein. In one embodiment, a semiconductor die assembly can include a package substrate, a first die mounted to the package substrate, and a second die mounted to the first die. The first die includes a first die substrate, and the second die includes a second die substrate attached to the first die substrate. At least one of the first and second dies includes a semiconductor substrate and a die substrate extension adjacent the semiconductor substrate. The die substrate extension comprises a mold material that at least partially defines a planform.
    Type: Application
    Filed: October 8, 2018
    Publication date: February 7, 2019
    Inventors: Fumitomo Watanabe, Keiyo Kusanagi
  • Publication number: 20190035706
    Abstract: Several aspects of the present technology are directed toward fan-out packaged semiconductor devices having an integrated shield to protect against electromagnetic interference and methods of manufacturing such devices. The shield can be constructed by forming a conductive wall on a redistribution structure and disposing a conductive cap on an upper surface of an encapsulant. The conductive wall and the conductive cap are electrically connected to each other. By forming the conductive wall directly on the redistribution structure and separately disposing the conductive cap onto an upper surface of the encapsulant, an electromagnetic shield can be readily formed using wafer-level or panel-level processing techniques that are efficient and cost-effective. Several embodiments of semiconductor devices in accordance with the present technology accordingly shield the integrated circuitry of semiconductor dies from electromagnetic interference.
    Type: Application
    Filed: July 28, 2017
    Publication date: January 31, 2019
    Inventors: Fumitomo Watanabe, Keiyo Kusanagi
  • Patent number: 10147705
    Abstract: Stacked semiconductor die assemblies with die substrate extensions are disclosed herein. In one embodiment, a semiconductor die assembly can include a package substrate, a first die mounted to the package substrate, and a second die mounted to the first die. The first die includes a first die substrate, and the second die includes a second die substrate attached to the first die substrate. At least one of the first and second dies includes a semiconductor substrate and a die substrate extension adjacent the semiconductor substrate. The die substrate extension comprises a mold material that at least partially defines a planform.
    Type: Grant
    Filed: February 21, 2017
    Date of Patent: December 4, 2018
    Assignee: Micron Technology, Inc.
    Inventors: Fumitomo Watanabe, Keiyo Kusanagi
  • Publication number: 20180294249
    Abstract: Semiconductor device assemblies with molded support substrates and associated methods are disclosed herein. In one embodiment, a semiconductor device assembly includes a support substrate formed from a molded material, a first semiconductor die at least partially embedded within the support substrate, a plurality of interconnects extending at least partially through the molded material, a second semiconductor die coupled to the support substrate, and a third semiconductor die coupled to the support substrate. The assembly can also include a redistribution network formed on a first and/or second side of the support substrate, and a plurality of conductive contacts electrically coupled to at least one of the first, second and third semiconductor dies.
    Type: Application
    Filed: April 6, 2017
    Publication date: October 11, 2018
    Inventors: Mitsuhisa Watanabe, Fumitomo Watanabe, Masanori Yoshida
  • Publication number: 20180240782
    Abstract: Stacked semiconductor die assemblies with die substrate extensions are disclosed herein. In one embodiment, a semiconductor die assembly can include a package substrate, a first die mounted to the package substrate, and a second die mounted to the first die. The first die includes a first die substrate, and the second die includes a second die substrate attached to the first die substrate. At least one of the first and second dies includes a semiconductor substrate and a die substrate extension adjacent the semiconductor substrate. The die substrate extension comprises a mold material that at least partially defines a planform.
    Type: Application
    Filed: February 21, 2017
    Publication date: August 23, 2018
    Inventors: Fumitomo Watanabe, Keiyo Kusanagi
  • Patent number: 8810047
    Abstract: A semiconductor device includes: a substrate having first and second surfaces, the first surface comprising first and second regions; a first semiconductor chip covering the first region; a first seal covering the second region and the first semiconductor chip; and a second seal covering the second surface.
    Type: Grant
    Filed: October 13, 2009
    Date of Patent: August 19, 2014
    Assignee: PS4 Luxco S.A.R.L.
    Inventors: Mitsuhisa Watanabe, Fumitomo Watanabe
  • Patent number: 8786102
    Abstract: A semiconductor device includes a first wiring board, a second semiconductor chip, and a second seal. The first wiring board includes a first substrate, a first semiconductor chip, and a first seal. The first semiconductor chip is disposed on the first substrate. The first seal is disposed on the first substrate. The first seal surrounds the first semiconductor chip. The first seal has the same thickness as the first semiconductor chip. The second semiconductor chip is stacked over the first semiconductor chip. The first semiconductor chip is between the second semiconductor chip and the first substrate. The second semiconductor chip is greater in size in plan view than the first semiconductor chip. The second seal seals at least a first gap between the first semiconductor chip and the second semiconductor chip.
    Type: Grant
    Filed: October 10, 2013
    Date of Patent: July 22, 2014
    Assignee: PS4 Luxco S.A.R.L.
    Inventors: Masanori Yoshida, Fumitomo Watanabe