Abstract: A cleaning apparatus includes: a rotation support section that supports and rotates a substrate; a chemical liquid supply section that supplies a chemical liquid other than an organic solvent to a surface of the substrate; an organic solvent supply section that supplies an organic solvent to a surface of the substrate; and cleaning means that cleans a surface of the substrate supported by the rotation support section using a chemical liquid from the chemical liquid supply section, and then cleans a surface of the substrate using an organic solvent from the organic solvent supply section with the substrate being kept supported by the rotation support section.

Abstract: A substrate cleaning apparatus has: a substrate rotating part that rotates a substrate; an edge cleaning member for cleaning an edge part of the substrate; an edge rotating part that rotates the edge cleaning member around an edge rotary shaft that extends in a direction orthogonal to a substrate rotary shaft; a moving part that moves a position of the edge cleaning member with respect to the edge part of the substrate; and a control part that controls the moving part to move the position of the edge cleaning member with respect to the edge part of the substrate, and causes the edge cleaning member to clean a one-side edge area including a face on one side, a side face area including a side face, and an another-side edge area including a face on another side in the edge part of the substrate.

Abstract: A cleaning apparatus includes: a cleaning tank that defines a cleaning space for cleaning a wafer; a wafer rotation mechanism that is arranged inside the cleaning tank and holds and rotates the wafer; a cleaning member that contacts and cleans a surface of the wafer, is rotatable around a central axis extending in a lateral direction, and has a length in an axial direction longer than a radius of the wafer; a swing mechanism that swings the cleaning member around a swing axis located inside the cleaning tank to move the cleaning member from a retracted position outside of the wafer to a cleaning position directly above the wafer; a second cleaning means that cleans the surface of the wafer; and a second swing mechanism that swings the second cleaning means around a second swing axis located inside the cleaning tank to pass directly above a center of the wafer.

Abstract: A cleaning apparatus includes: a cleaning tank that defines a cleaning space for cleaning a wafer; a wafer rotation mechanism that is arranged inside the cleaning tank and holds and rotates the wafer; a cleaning member that contacts and cleans a surface of the wafer, is rotatable around a central axis extending in a lateral direction, and has a length in an axial direction longer than a radius of the wafer; a swing mechanism that swings the cleaning member around a swing axis located inside the cleaning tank to move the cleaning member from a retracted position outside of the wafer to a cleaning position directly above the wafer; a second cleaning means that cleans the surface of the wafer; and a second swing mechanism that swings the second cleaning means around a second swing axis located inside the cleaning tank to pass directly above a center of the wafer.

Abstract: A substrate cleaning device includes a rotation mechanism that rotates the substrate, a first cleaning solution supply nozzle that discharges a cleaning solution to which ultrasonic vibration is applied to the surface of the substrate, and a swing mechanism that swings the first cleaning solution supply nozzle from a vicinity of a rotation center of the substrate toward an outer peripheral edge of the substrate in a range narrower than a half-surface of the substrate.

Abstract: A substrate cleaning apparatus includes a substrate rotation supporting section that supports and rotates a substrate; a roll holding section that rotatably holds a first roll cleaning member and a second roll cleaning member each having a length almost equal to a radius of the substrate; a roll rotation drive section that rotates the first roll cleaning member and the second roll cleaning member about respective axes of rotation parallel to a front surface of the substrate; and a roll pressing section that brings the first roll cleaning member and the second roll cleaning member that are rotating into sliding contact with the front surface of the substrate. The first roll cleaning member and the second roll cleaning member are disposed so as to cover different radial parts of the front surface of the substrate.

Abstract: A substrate cleaning device includes a rotation mechanism that rotates the substrate, a first cleaning solution supply nozzle that discharges a cleaning solution to which ultrasonic vibration is applied to the surface of the substrate, and a swing mechanism that swings the first cleaning solution supply nozzle from a vicinity of a rotation center of the substrate toward an outer peripheral edge of the substrate in a range narrower than a half-surface of the substrate.

Abstract: According to one embodiment, provided is a substrate cleaning device including a nozzle that includes: a first supply port; a second supply port; a third supply port; a first discharge port; and a third discharge port, wherein the substrate cleaning device is configured to clean a substrate with jets of the second mixed fluid of the gas, the treatment liquid and the surface tension reducing gas.

Abstract: An apparatus for cleaning a substrate has a holding unit 60 that holds a substrate W; a rotated unit 30 connected to the holding unit 60; a rotating unit 35 that is provided on a peripheral outer side of the rotated unit 30 and rotates the rotated unit 30; and a cleaning unit 10, 20 that physically cleans the substrate W held by the holding unit 60.

Abstract: A cleaning apparatus includes: a cleaning tank that defines a cleaning space for cleaning a wafer; a wafer rotation mechanism that is arranged inside the cleaning tank and holds and rotates the wafer; a cleaning member that contacts and cleans a surface of the wafer, is rotatable around a central axis extending in a lateral direction, and has a length in an axial direction longer than a radius of the wafer; a swing mechanism that swings the cleaning member around a swing axis located inside the cleaning tank to move the cleaning member from a retracted position outside of the wafer to a cleaning position directly above the wafer; a second cleaning means that cleans the surface of the wafer; and a second swing mechanism that swings the second cleaning means around a second swing axis located inside the cleaning tank to pass directly above a center of the wafer.

Abstract: A substrate cleaning apparatus has: a substrate rotating part that rotates a substrate; an edge cleaning member for cleaning an edge part of the substrate; an edge rotating part that rotates the edge cleaning member around an edge rotary shaft that extends in a direction orthogonal to a substrate rotary shaft; a moving part that moves a position of the edge cleaning member with respect to the edge part of the substrate; and a control part that controls the moving part to move the position of the edge cleaning member with respect to the edge part of the substrate, and causes the edge cleaning member to clean a one-side edge area including a face on one side, a side face area including a side face, and an another-side edge area including a face on another side in the edge part of the substrate.

Abstract: An apparatus for cleaning a substrate has a holding unit 60 that holds a substrate W; a rotated unit 30 connected to the holding unit 60; a rotating unit 35 that is provided on a peripheral outer side of the rotated unit 30 and rotates the rotated unit 30; and a cleaning unit 10, 20 that physically cleans the substrate W held by the holding unit 60.

Abstract: A substrate is cleaned by performing a scrubbing process on a surface to be cleaned of the rotating substrate with a roll-shaped cleaning member while holding an outer circumferential surface of the roll-shaped cleaning member in contact with the surface to be cleaned of the substrate across a predetermined contact width. During at least a part of the scrubbing process, the roll-shaped cleaning member is placed at an offset cleaning position where the central axis of the roll-shaped cleaning member is spaced from the central axis of the substrate by a distance which is 0.14 to 0.5 times the contact width. The surface to be cleaned of the substrate is scrubbed with more uniform cleaning intensity while taking into account the cleaning intensity at each position (area) along the radial direction of the surface to be cleaned of the substrate.

Abstract: A substrate is cleaned by performing a scrubbing process on a surface to be cleaned of the rotating substrate with a roll-shaped cleaning member while holding an outer circumferential surface of the roll-shaped cleaning member in contact with the surface to be cleaned of the substrate across a predetermined contact width. During at least a part of the scrubbing process, the roll-shaped cleaning member is placed at an offset cleaning position where the central axis of the roll-shaped cleaning member is spaced from the central axis of the substrate by a distance which is 0.14 to 0.5 times the contact width. The surface to be cleaned of the substrate is scrubbed with more uniform cleaning intensity while taking into account the cleaning intensity at each position (area) along the radial direction of the surface to be cleaned of the substrate.

Abstract: A substrate cleaning method is provided, which can clean a surface of a substrate with a roll cleaning member more uniformly over the entire surface even when a point (area) exists in the cleaning area of the surface of the substrate at which the relative speed between the rotational speed of the substrate and the rotational speed of the roll cleaning member is zero. The substrate cleaning method for scrubbing a surface of a substrate with a roll cleaning member, extending along the diametrical direction of the substrate, by rotating the substrate and the roll cleaning member while keeping the roll cleaning member in contact with the surface of the substrate, includes changing a rotational speed of at least one of the substrate and the roll cleaning member or a direction of rotation of the substrate during the scrub cleaning of the surface of the substrate.

Abstract: A substrate processing apparatus includes: a polishing device 30A for polishing the surface of a substrate; and at least one of an ultrasonic cleaning device 42 for cleaning the surface of the substrate with ultrasonic waves transmitted through a liquid, and a two-fluid jet cleaning device 44 for cleaning the surface of the substrate with a two-fluid jet spouted as a mixture of a gas and a liquid. A substrate processing method includes: a polishing step of polishing the surface of a substrate; and a solid matter noncontact cleaning step of cleaning the surface of the substrate by spraying a liquid to the surface of the substrate. The above apparatus and method make it possible to efficiently clean the surface of a substrate after it is polished.

Abstract: A substrate is cleaned by performing a scrubbing process on a surface to be cleaned of the rotating substrate with a roll-shaped cleaning member while holding an outer circumferential surface of the roll-shaped cleaning member in contact with the surface to be cleaned of the substrate across a predetermined contact width. During at least a part of the scrubbing process, the roll-shaped cleaning member is placed at an offset cleaning position where the central axis of the roll-shaped cleaning member is spaced from the central axis of the substrate by a distance which is 0.14 to 0.5 times the contact width. The surface to be cleaned of the substrate is scrubbed with more uniform cleaning intensity while taking into account the cleaning intensity at each position (area) along the radial direction of the surface to be cleaned of the substrate.

Abstract: A substrate processing apparatus includes: a polishing device 30A for polishing the surface of a substrate; and at least one of an ultrasonic cleaning device 42 for cleaning the surface of the substrate with ultrasonic waves transmitted through a liquid, and a two-fluid jet cleaning device 44 for cleaning the surface of the substrate with a two-fluid jet spouted as a mixture of a gas and a liquid. A substrate processing method includes: a polishing step of polishing the surface of a substrate; and a solid matter noncontact cleaning step of cleaning the surface of the substrate by spraying a liquid to the surface of the substrate. The above apparatus and method make it possible to efficiently clean the surface of a substrate after it is polished.

Abstract: A substrate cleaning apparatus allows an end face and/or a bevel face of a substrate to be scrub-cleaned in a simple and effective manner. The apparatus has a plurality of rotatable substrate rotating rollers for gripping a periphery of the substrate and rotating the substrate, a cleaning roller capable of rotating and having a cleaning member which is to be brought into contact with the end face and/or the bevel face of the substrate so as to apply scrub-cleaning to the end face and/or the bevel face, and a power transmission mechanism for transmitting a rotating force of the substrate rotating roller to the cleaning roller so as to rotate the cleaning roller.