Patents by Inventor Fumitsugu Fukuyo
Fumitsugu Fukuyo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20130009284Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.Type: ApplicationFiled: September 14, 2012Publication date: January 10, 2013Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Yoshimaro FUJII, Fumitsugu FUKUYO, Kenshi FUKUMITSU, Naoki UCHIYAMA
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Publication number: 20120329248Abstract: Multiphoton absorption is generated, so as to form a part which is intended to be cut 9 due to a molten processed region 13 within a silicon wafer 11, and then an adhesive sheet 20 bonded to the silicon wafer 11 is expanded. This cuts the silicon wafer 11 along the part which is intended to be cut 9 with a high precision into semiconductor chips 25. Here, opposing cut sections 25a, 25a of neighboring semiconductor chips 25, 25 are separated from each other from their close contact state, whereby a die-bonding resin layer 23 is also cut along the part which is intended to be cut 9. Therefore, the silicon wafer 11 and die-bonding resin layer 23 can be cut much more efficiently than in the case where the silicon wafer 11 and die-bonding resin layer 23 are cut with a blade without cutting a base 21.Type: ApplicationFiled: September 10, 2012Publication date: December 27, 2012Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Fumitsugu FUKUYO, Kenshi Fukumitsu, Naoki Uchiyama, Ryuji Sugiura
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Publication number: 20120314295Abstract: The object is to easily expand a variable range of selective wavelengths without enlarging a device. A spectral device 1 of the present invention includes four band pass filters 11a to 11d through which a light L2 from a light source 3 is selectively transmitted within a wavelength range according to an incident angle of the light L2, and a tabular rotary table 10 in which the band pass filters 11a to 11d are installed upright on a principal surface 10a, and which is made rotatable around a rotational center C1 along the principal surface 10a, and the four band pass filters 11a to 11d are respectively disposed so that optical incidence planes 12 or optical emission planes 13 are inclined with respect to lines connecting the rotational center C1 on the principal surface 10a of the rotary table 10 and center points 15a and 15d of the bandpass filters 11a to 11d.Type: ApplicationFiled: January 6, 2011Publication date: December 13, 2012Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Fumitsugu Fukuyo, Michiharu Yonezawa
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Patent number: 8314013Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.Type: GrantFiled: April 19, 2010Date of Patent: November 20, 2012Assignee: Hamamatsu Photonics K.K.Inventors: Yoshimaro Fujii, Fumitsugu Fukuyo, Kenshi Fukumitsu, Naoki Uchiyama
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Publication number: 20120279947Abstract: A laser beam machining method and a laser beam machining device capable of cutting a work along a predetermined cutting line on the surface of the work, wherein a pulse laser beam is irradiated on the predetermined cutting line on the surface of the work causing a multiple photon absorption with a condensed point arranged inside the work, and a modified area is formed inside the work along the predetermined determined cutting line by moving the condensed point along the predetermined cutting line, whereby the work can be cut with a small force by cracking the work along the predetermined cutting line starting from the modified area.Type: ApplicationFiled: June 21, 2012Publication date: November 8, 2012Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Fumitsugu FUKUYO, Kenshi Fukumitsu, Naoki Uchiyama, Toshimitsu Wakuda
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Patent number: 8304325Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.Type: GrantFiled: November 29, 2007Date of Patent: November 6, 2012Assignee: Hamamatsu-Photonics K.K.Inventors: Yoshimaro Fujii, Fumitsugu Fukuyo, Kenshi Fukumitsu, Naoki Uchiyama
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Patent number: 8283595Abstract: A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.Type: GrantFiled: August 31, 2009Date of Patent: October 9, 2012Assignee: Hamamatsu Photonics K.K.Inventors: Fumitsugu Fukuyo, Kenshi Fukumitsu, Naoki Uchiyama, Toshimitsu Wakuda
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Patent number: 8268704Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.Type: GrantFiled: March 6, 2003Date of Patent: September 18, 2012Assignee: Hamamatsu Photonics K.K.Inventors: Yoshimaro Fujii, Fumitsugu Fukuyo, Kenshi Fukumitsu, Naoki Uchiyama
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Publication number: 20120228276Abstract: A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cutting line on the surface of the work to cause multiple photon absorption and with a condensed point located inside of the work, and a modified area is formed inside the work along the predetermined determined cutting line by moving the condensed point along the predetermined cut line, whereby the work is cut with a small force by cracking the work along the predetermined cutting line starting from the modified area and, because the pulse laser beam is hardly absorbed onto the surface.Type: ApplicationFiled: March 23, 2012Publication date: September 13, 2012Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Fumitsugu Fukuyo, Kenshi Fukumitsu, Naoki Uchiyama, Toshimitsu Wakuda
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Patent number: 8263479Abstract: Multiphoton absorption is generated, so as to form a part which is intended to be cut 9 due to a molten processed region 13 within a silicon wafer 11, and then an adhesive sheet 20 bonded to the silicon wafer 11 is expanded. This cuts the silicon wafer 11 along the part which is intended to be cut 9 with a high precision into semiconductor chips 25. Here, opposing cut sections 25a, 25a of neighboring semiconductor chips 25, 25 are separated from each other from their close contact state, whereby a die-bonding resin layer 23 is also cut along the part which is intended to be cut 9. Therefore, the silicon wafer 11 and die-bonding resin layer 23 can be cut much more efficiently than in the case where the silicon wafer 11 and die-bonding resin layer 23 are cut with a blade without cutting a base 21.Type: GrantFiled: September 11, 2003Date of Patent: September 11, 2012Assignee: Hamamatsu Photonics K.K.Inventors: Fumitsugu Fukuyo, Kenshi Fukumitsu, Naoki Uchiyama, Ryuji Sugiura
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Patent number: 8247734Abstract: A laser processing method which can accurately cut an object to be processed along a line to cut is provided. A modified region 7 formed by multiphoton absorption forms a cutting start region 8 within an object to be processed 1 along a line 5 along which the object is intended to be cut. Thereafter, the object 1 is irradiated with laser light L2 transmittable through an unmodified region of the object 1, so as to generate fractures 24 from the cutting start region 8 acting as a start point, whereby the object 1 can accurately be cut along the line 5 along which the object is intended to be cut. Expanding an expandable film 19 having the object 1 secured thereto separates individual chips 25 from each other, which can further improve the reliability in cutting the object 1 along the line 5 along which the object is intended to be cut.Type: GrantFiled: March 12, 2003Date of Patent: August 21, 2012Assignee: Hamamatsu Photonics K.K.Inventors: Fumitsugu Fukuyo, Kenshi Fukumitsu, Naoki Uchiyama, Toshimitsu Wakuda, Kazuhiro Atsumi, Kenichi Muramatsu
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Publication number: 20120205357Abstract: A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cutting line on the surface of the work to cause multiple photon absorption and with a condensed point located inside of the work, and a modified area is formed inside the work along the predetermined determined cutting line by moving the condensed point along the predetermined cut line, whereby the work is cut with a small force by cracking the work along the predetermined cutting line starting from the modified area and, because the pulse laser beam is hardly absorbed onto the surface.Type: ApplicationFiled: March 28, 2012Publication date: August 16, 2012Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Fumitsugu Fukuyo, Kenshi Fukumitsu, Naoki Uchiyama, Toshimitsu Wakuda
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Publication number: 20120205358Abstract: A method of cutting an object which can accurately cut the object is provided. An object to be processed 1 such as a silicon wafer is irradiated with laser light L while a light-converging point P is positioned therewithin, so as to form a modified region 7 due to multiphoton absorption within the object 1, and cause the modified region 7 to form a starting point region for cutting 8 shifted from the center line CL of the thickness of the object 1 toward the front face 3 of the object 1 along a line along which the object should be cut. Subsequently, the object 1 is pressed from the rear face 21 side thereof. This can generate a fracture from the starting point region for cutting 8 acting as a start point, thereby accurately cutting the object 1 along the line along which the object should be cut.Type: ApplicationFiled: April 20, 2012Publication date: August 16, 2012Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Fumitsugu FUKUYO, Kenshi FUKUMITSU
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Publication number: 20120190175Abstract: A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.Type: ApplicationFiled: March 28, 2012Publication date: July 26, 2012Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Fumitsugu FUKUYO, Kenshi FUKUMITSU, Naoki UCHIYAMA, Toshimitsu WAKUDA
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Patent number: 8227724Abstract: A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.Type: GrantFiled: January 12, 2010Date of Patent: July 24, 2012Assignee: Hamamatsu Photonics K.K.Inventors: Fumitsugu Fukuyo, Kenshi Fukumitsu, Naoki Uchiyama, Toshimitsu Wakuda
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Patent number: 8183131Abstract: A method of cutting an object which can accurately cut the object is provided. An object to be processed 1 such as a silicon wafer is irradiated with laser light L while a light-converging point P is positioned therewithin, so as to form a modified region 7 due to multiphoton absorption within the object 1, and cause the modified region 7 to form a starting point region for cutting 8 shifted from the center line CL of the thickness of the object 1 toward the front face 3 of the object 1 along a line along which the object should be cut. Subsequently, the object 1 is pressed from the rear face 21 side thereof. This can generate a fracture from the starting point region for cutting 8 acting as a start point, thereby accurately cutting the object 1 along the line along which the object should be cut.Type: GrantFiled: September 30, 2009Date of Patent: May 22, 2012Assignee: Hamamatsu Photonics K. K.Inventors: Fumitsugu Fukuyo, Kenshi Fukumitsu
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Publication number: 20120077315Abstract: A wafer having a front face formed with a functional device is irradiated with laser light while positioning a light-converging point within the wafer with the rear face of the wafer acting as a laser light incident face, so as to generate multiphoton absorption, thereby forming a starting point region for cutting due to a molten processed region within the wafer along a line. Consequently, a fracture can be generated from the starting point region for cutting naturally or with a relatively small force, so as to reach the front face and rear face. Therefore, when an expansion film is attached to the rear face of the wafer by way of a die bonding resin layer after forming the starting point region for cutting and then expanded, the wafer and die bonding resin layer can be cut along the line.Type: ApplicationFiled: October 7, 2011Publication date: March 29, 2012Applicant: Hamamatsu Photonics K.K.Inventors: Kenshi FUKUMITSU, Fumitsugu FUKUYO, Naoki UCHIYAMA, Ryuji SUGIURA, Kazuhiro ATSUMI
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Publication number: 20110306182Abstract: Multiphoton absorption is generated, so as to form a part which is intended to be cut 9 due to a molten processed region 13 within a silicon wafer 11, and then an adhesive sheet 20 bonded to the silicon wafer 11 is expanded. This cuts the silicon wafer 11 along the part which is intended to be cut 9 with a high precision into semiconductor chips 25. Here, opposing cut sections 25a, 25a of neighboring semiconductor chips 25, 25 are separated from each other from their close contact state, whereby a die-bonding resin layer 23 is also cut along the part which is intended to be cut 9. Therefore, the silicon wafer 11 and die-bonding resin layer 23 can be cut much more efficiently than in the case where the silicon wafer 11 and die-bonding resin layer 23 are cut with a blade without cutting a base 21.Type: ApplicationFiled: August 9, 2011Publication date: December 15, 2011Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Fumitsugu Fukuyo, Kenshi Fukumitsu, Naoki Uchiyama, Ryuji Sugiura
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Patent number: 8058103Abstract: A method for cutting a semiconductor substrate having a front face formed with functional devices together with a die bonding resin layer. A wafer having a front face formed with functional devices is irradiated with laser light while positioning a light-converging point within the wafer with the rear face of the wafer acting as a laser light incident face, so as to form a starting point region for cutting due to a modified region within the wafer along a cutting line. When an expansion film is attached to the rear face by way of a die bonding resin layer after forming the starting point region and then expanded, a fracture can be generated from the starting point region which reaches the front face and rear face, consequently, the wafer and die bonding resin layer can be cut along the cutting line.Type: GrantFiled: October 21, 2009Date of Patent: November 15, 2011Assignee: Hamamatsu Photonics K.K.Inventors: Kenshi Fukumitsu, Fumitsugu Fukuyo, Naoki Uchiyama, Ryuji Sugiura, Kazuhiro Atsumi
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Publication number: 20110037149Abstract: A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.Type: ApplicationFiled: October 26, 2010Publication date: February 17, 2011Applicant: HAMAMATSU PHOTONICS K.K.Inventors: FUMITSUGU FUKUYO, KENSHI FUKUMITSU, NAOKI UCHIYAMA, TOSHIMITSU WAKUDA