Patents by Inventor Fumiyasu Utsunomiya

Fumiyasu Utsunomiya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MISFET semiconductor integrated circuit device
    Patent number: 5905291
    Abstract: A semiconductor integrated circuit device comprises at least two MISFETs formed on a semiconductor substrate and connected in series in a diode connection. Each of the MISFETs has a source, a drain, a channel extending between the source and the drain, and a gate disposed over the channel through a gate insulating film. One of the MISFETs has a first threshold voltage, and the other of the MISFETs has a second threshold voltage lower than the first threshold voltage. A portion of the channel of the semiconductor substrate of each of the MISFETs has an impurity concentration equal to or less than 6.times.10.sup.14 atoms/cc.
    Type: Grant
    Filed: July 18, 1995
    Date of Patent: May 18, 1999
    Assignee: Seiko Instruments Inc.
    Inventors: Fumiyasu Utsunomiya, Yutaka Saitoh, Naoto Saitoh, Jun Osanai, Haruo Konishi, Masanori Miyagi