Patents by Inventor Fumiyoshi Urano
Fumiyoshi Urano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7374857Abstract: The present invention relates to a novel bisimide compound useful as an acid generator for a chemically amplified resist composition used in manufacturing of semiconductor element and the like or a raw material for synthesizing heat resistant polymers, an acid generator and a resist composition using said compound and a method for pattern formation using said composition, and further relates to a synthetic n intermediate for a bisimide compound and a bis(N-hydroxy)phthalimide compound useful as an intermediate for a functional compound such as a heat resistant polymer or photosensitive material, and provides a bisimide compound shown by the general formula [1]: (wherein R and A1 are as defined in claim 1).Type: GrantFiled: November 28, 2002Date of Patent: May 20, 2008Assignees: Wako Pure Chemical Industries Ltd., Matsushita Electric Industrial Co., Ltd.Inventors: Tsuneaki Maesawa, Fumiyoshi Urano, Masayuki Endo, Masaru Sasago
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Patent number: 7312014Abstract: The present invention relates to a resist composition for practical use with high resolution, high sensitivity, superior pattern profile and no outgas in energy irradiation under high vacuum, suitable to an ultra-fine processing technology represented by use of electron beam and the like, and provides: (1) a resist composition comprising at least one kind of polymer containing, as components thereof, a monomer unit represented by the following general formula [1]: a monomer unit represented by the following general formula [2]: and a monomer unit represented by the following general formula [3]: at least one kind of compound to generate an acid by irradiation of radioactive ray, represented by the following general formula [4]; an organic basic compound; and a solvent, (2) the resist composition in accordance with (1), further containing a polymer unit represented by the following general formula [13]: and, (3) the resist composition in accordance with (1) and (2), further containing a compType: GrantFiled: June 21, 2002Date of Patent: December 25, 2007Assignee: Wako Pure Chemical Industries Ltd.Inventors: Tsuneaki Maesawa, Fumiyoshi Urano
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Publication number: 20050038261Abstract: The present invention relates to a novel bisimide compound useful as an acid generator for a chemically amplified resist composition used in manufacturing of semiconductor element and the like or a raw material for synthesizing heat resistant polymers, an acid generator and a resist composition using said compound and a method for pattern formation using said composition, and further relates to a synthetic n intermediate for a bisimide compound and a bis(N-hydroxy)phthalimide compound useful as an intermediate for a functional compound such as a heat resistant polymer or photosensitive material, and provides a bisimide compound shown by the general formula [1]: (wherein R and A1 are as defined in claim 1.Type: ApplicationFiled: November 28, 2002Publication date: February 17, 2005Inventors: Tsuneaki Maesawa, Fumiyoshi Urano, Masayuki Endo, Masaru Sasago
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Publication number: 20040170918Abstract: The present invention relates to a resist composition for practical use with high resolution, high sensitivity, superior pattern profile and no outgass in energy irradiation under high vacuum, suitable to an ultra-fine processing technology represented by use of electron beam and the like, and provides: (1) a resist composition comprising at least one kind of polymer containing, as components thereof, a monomer unit represented by the following general formula [1]: 1Type: ApplicationFiled: December 19, 2003Publication date: September 2, 2004Inventors: Tsuneaki Maesawa, Fumiyoshi Urano
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Patent number: 6723483Abstract: A triphenyl sulfonium salt compound shown by the general formula [1] or [3]. (wherein R1 and R2 are each independently a hydrogen atom or a lower alkyl group, provided that at least one of R1 and R2 are a lower alkyl group, R3s are each independently an alkyl group, n is an integer of 0 to 3, i is an integer of 1 to 3, j is an integer of 0 to 2, provided that i+j=3, Y− is an anion derived from a sulfonic acid shown by the general formula [2] R4—SO3H [2] [wherein R4 is an alkyl group or an aryl group which may have as a substituent an alkyl group]). (wherein X is a phenyl group which has a substituent at an ortho- and/or a meta-position, m is an integer of 1 to 3, q is an integer of 0 to 2, provided that m+q=3, p is 1 or 2 and Zp− is an anion derived from a carboxylic acid).Type: GrantFiled: December 7, 2000Date of Patent: April 20, 2004Assignee: Wako Pure Chemical Industries, Ltd.Inventors: Keiji Oono, Kazuhito Fukasawa, Kazunori Sakamoto, Fumiyoshi Urano, Motoshige Sumino, Shigeaki Imazeki
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Patent number: 6656660Abstract: A resist composition comprising (a) at least two kinds of polymers which become alkali-soluble by the action of an acid, (b) as a photoacid generator, a combination of an alkylsulfonyl diazomethane compound and a triarylsulfonium arylsulfonate compound or a diaryliodonium arylsulfonate compound, and (c) a solvent is excellent as a chemically amplified resist composition to give excellent pattern shape and very fine line-and-space, particularly when exposed to lights having a wavelength of 300 nm or less.Type: GrantFiled: January 27, 2000Date of Patent: December 2, 2003Assignee: Sumitomo Chemical Company, LimitedInventors: Fumiyoshi Urano, Hirotoshi Fujie, Naoki Takeyama, Koji Ichikawa
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Patent number: 6586152Abstract: The present invention relates to an agent for reducing substrate dependence useful as an ingredient of a resist composition used for preparation of semiconductor devices and the like, which comprises a compound shown by the following general formula [1]: wherein R41 is a hydrogen atom or a methyl group, R42 is a hydrogen atom, a methyl group, an ethyl group or a phenyl group, R43 is a straight chained, branched or cyclic alkyl group having 1 to 6 carbon atoms, and n is 0 or 1.Type: GrantFiled: June 12, 2000Date of Patent: July 1, 2003Assignee: Wako Pure Chemical Industries, Ltd.Inventors: Fumiyoshi Urano, Naoki Katano, Tomoko Kiryu
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Patent number: 6033826Abstract: A polymer of polyhydroxystyrene derivative containing an acetal or ketal group which can easily be eliminated in the presence of an acid in the molecule and having a very narrow molecular weight distribution gives a resist material suitable for forming ultrafine patterns excellent in resolution, heat resistance, mask linearity, and other properties without causing problems of delay time and the like.Type: GrantFiled: December 19, 1996Date of Patent: March 7, 2000Assignee: Wako Pure Chemical Industries, Ltd.Inventors: Fumiyoshi Urano, Hirotoshi Fujie, Keiji Oono
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Patent number: 5976759Abstract: A polymer composition comprising (i) a polymer (a) having a monomer unit containing a functional group A which becomes alkali-soluble by heating in the presence of an acid, (ii) a polymer (b) having a monomer unit containing a functional group B which also becomes alkali-soluble, but less easily than the functional group A, by heating in the presence of an acid, and if necessary in addition to (i) and (ii) or in place of (ii), (iii) a phenolic compound having a weight-average molecular weight of 300 to 15,000 gives together with an photoacid generator a resist material suitable for forming a pattern excellent in sensitivity, resolution, mask linearity and other properties.Type: GrantFiled: December 19, 1996Date of Patent: November 2, 1999Assignee: Wako Pure Chemical Industries, Ltd.Inventors: Fumiyoshi Urano, Hirotoshi Fujie, Keiji Oono
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Patent number: 5973094Abstract: To provide a polymer comprising as a structural unit a monomer unit containing a hydroxy group or other hydrophilic radical and other functional group in the molecule which is useful in medical, cosmetic and electric industries.A polymer comprising as a structural unit a monomer unit shown by the general formfula [1] ##STR1## (wherein R.sup.1 and R.sup.2 are, independently, a hydrogen atom or a halogen atom, R.sup.3 is a hydrophilic radical and R.sup.4 is a cyano group or a carboxyl group which may he esterified).Type: GrantFiled: March 5, 1997Date of Patent: October 26, 1999Assignee: Wako Pure Chemical Industries, Ltd.Inventors: Fumiyoshi Urano, Motoshige Sumino, Tsuneaki Maesawa
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Patent number: 5780206Abstract: A resist composition for deep ultraviolet light comprising (a) one of the following resin components (i)-(iii): (i) a resin which becomes alkali-soluble by eliminating protective groups by the action of an acid, (ii) a combination of an alkali-soluble resin and a dissolution-inhibiting compound, and (iii) a combination of an alkali-soluble resin and a crosslinkable compound, (b) an acid generater, (c) a special anthracene derivative, and (d) a solvent, is suitable for forming a pattern using deep ultraviolet light, KrF excimer laser light, etc., on a highly reflective substrate having level differences due to absorption of undesirable reflected deep ultraviolet light.Type: GrantFiled: July 23, 1997Date of Patent: July 14, 1998Assignees: Wako Pure Chemical Industries, Ltd., Matsushita Electric Industrial Co., Ltd.Inventors: Fumiyoshi Urano, Takanori Yasuda, Akiko Katsuyama, Kazuhiro Yamashita
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Patent number: 5695910Abstract: A resist composition for deep ultraviolet light comprising (a) one of the following resin components (i)-(iii): (i) a resin which becomes alkali-soluble by eliminating protective groups by the action of an acid, (ii) a combination of an alkali-soluble resin and a dissolution-inhibiting compound, and (iii) a combination of an alkali-soluble resin and a crosslinkable compound, (b) an acid generater, (c) a special anthracene derivative, and (d) a solvent, is suitable for forming a pattern using deep ultraviolet light, KrF excimer laser light, etc., on a highly reflective substrate having level differences due to absorption of undesirable reflected deep ultraviolet light.Type: GrantFiled: August 26, 1996Date of Patent: December 9, 1997Assignees: Wako Pure Chemical Industries, Ltd., Matsushita Electrical Industrial Co., Ltd.Inventors: Fumiyoshi Urano, Takanori Yasuda, Akiko Katsuyama, Kazuhiro Yamashita
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Patent number: 5677112Abstract: A deep ultraviolet absorbent comprising at least one compound having one or more glycidyl groups in the molecule and at least one anthracene derivative, and a solvent capable of dissolving these compounds is effective for preventing reflection of deep ultraviolet light from a substrate during formation of resist pattern, resulting in forming ultra-fine patterns without causing notching and halation.Type: GrantFiled: July 29, 1996Date of Patent: October 14, 1997Assignees: Wako Pure Chemical Industries, Ltd., Matsushita Electric Industries Co., Ltd.Inventors: Fumiyoshi Urano, Keiji Oono, Hiroshi Matsuda, Masayuki Endo, Satoshi Kobayashi
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Patent number: 5670299Abstract: A resist composition comprising (a) a polymer having at least repeating units of the formulae: ##STR1## (b) a photoacid generator and (c) a solvent, has high sensitivity to light, excellent heat resistance, adhesiveness to a substrate and suitable for pattern formation with high resolution.Type: GrantFiled: June 7, 1995Date of Patent: September 23, 1997Assignee: Wako Pure Chemical Industries, Ltd.Inventors: Fumiyoshi Urano, Hirotoshi Fujie, Keiji Oono, Takaaki Negishi
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Patent number: 5627006Abstract: A photoresist composition comprising (a) a difficultly alkali-soluble special resin, (b) a photo-sensitive compound capable of generating a carboxylic acid, and (c) a solvent, is effective for pattern formation using deep ultraviolet light, KrF excimer laser beams, etc.Type: GrantFiled: April 18, 1995Date of Patent: May 6, 1997Assignees: Wako Pure Chemical Industries, Ltd., Matsushita Electric Industrial Co., Ltd.Inventors: Fumiyoshi Urano, Keiji Oono, Hirotoshi Fujie
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Patent number: 5576359Abstract: A deep ultraviolet absorbent comprising at least one compound having one or more glycidyl groups in the molecule and at least one anthracene derivative, and a solvent capable of dissolving these compounds is effective for preventing reflection of deep ultraviolet light from a substrate during formation of resist pattern, resulting in forming ultra-fine patterns without causing notching and halation.Type: GrantFiled: July 11, 1994Date of Patent: November 19, 1996Assignees: Wako Pure Chemical Industries, Ltd., Matsushita Electric Industrial Co., Ltd.Inventors: Fumiyoshi Urano, Keiji Oono, Hiroshi Matsuda, Masayuki Endo, Satoshi Kobayashi
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Patent number: 5558971Abstract: A resist material comprising (a) a terpolymer, (b) a photoacid generator, and (c) a solvent has high light sensitivity, heat resistance, adhesiveness, resolution, etc., and is suitable for forming a pattern of rectangular shape.Type: GrantFiled: March 21, 1995Date of Patent: September 24, 1996Assignees: Wako Pure Chemical Industries, Ltd., Matsushita Electric Industrial Co., Ltd.Inventors: Fumiyoshi Urano, Takaai Negishi, Akiko Katsuyama, Masayuki Endo
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Patent number: 5558976Abstract: A resist material comprising (a) a terpolymer, (b) a photoacid generator, and (c) a solvent has high light sensitivity, heat resistance, adhesiveness, resolution, etc., and is suitable for forming a pattern of rectangular shape.Type: GrantFiled: November 29, 1995Date of Patent: September 24, 1996Assignees: Wako Pure Chemical Industries, LTD., Matsushita Electric Industrial Co., LTD.Inventors: Fumiyoshi Urano, Takaaki Negishi, Akiko Katsuyama, Masayuki Endo
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Patent number: 5498748Abstract: An anthracene derivative having at least two groups of the formula: ##STR1## wherein R.sup.1 and R.sup.2 are independently hydrogen, alkyl, alkoxy, etc., is particular effective for forming an antireflection coating for preventing multiple reflection of exposing light from a highly reflective substrate, etc.Type: GrantFiled: July 11, 1994Date of Patent: March 12, 1996Assignee: Wako Pure Chemical Industries, Ltd.Inventors: Fumiyoshi Urano, Keiji Oono, Hiroshi Matsuda
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Patent number: RE40211Abstract: wherein R1 is a C3-8 branched or cyclic alkyl group, and R2 is a C1-8 straight-chain, branched or cyclic alkyl group, is effective as a photoacid generator when used in a photoresist material for light of 300 nm or less.Type: GrantFiled: March 15, 2001Date of Patent: April 1, 2008Assignee: Wako Pure Chemical Industries, Ltd.Inventors: Fumiyoshi Urano, Masaaki Nakahata, Hirotoshi Fujie, Keiji Oono