Abstract: A resist composition comprising (a) a polymer having at least repeating units of the formulae: ##STR1## (b) a photoacid generator and (c) a solvent, has high sensitivity to light, excellent heat resistance, adhesiveness to a substrate and suitable for pattern formation with high resolution.

Abstract: A negative working resist composition comprising (a) an alkali-soluble resin, (b) an aromatic compound having at least two groups of the formula: --OCH.sub.2 OR.sup.1 wherein R.sup.1 is alkyl or aralkyl, (c) a photoacid generator, and (d) a solvent, can form fine patterns with high resolution when exposed to deep UV, KrF excimer laser light, etc. due to high light transmittance and high sensitivity.

Abstract: A resist material comprising (a) a polymer having a monomer unit having a special functional group, a monomer unit having a phenolic hydroxyl group, and if necessary a third monomer unit, (b) a photoacid generator, and (c) a solvent can provide a resist film excellent in heat resistance and adhesiveness to a substrate when exposed to light with 300 nm or less such as deep UV light, KrF excimer laser light, etc., and is suitable for forming ultrafine patterns.

Abstract: Disclosed is a pattern forming contrast enhanced material comprising (a) a water soluble photosensitive compound selected from the group consisting of a water soluble aliphatic photosensitive compound (excluding ring compounds) having one or more of the group expressed by the formula (I), an aliphatic photosensitive quaternary ammonium salt having one or more of the group expressed by the formula (I), an aromatic photosensitive quaternary ammonium salt having one or more of the group expressed by the formula (I), and a photosensitive pyridinium salt having one or more of the group expressed by the formula (I), (b) a water soluble resin and (c) water and a pattern forming method using the same. ##STR1## According to the present invention, this material is used as a contrast enhanced layer in the exposure effected by deep ultraviolet ray such as an excimer laser beam to form a good fine pattern of a submicron order.

Abstract: A diazodisulfone of the formula: ##STR1## wherein R.sup.1 is a C.sub.3-8 branched or cyclic alkyl group, and R.sup.2 is a C.sub.1-8 straight-chain, branched or cyclic alkyl group, is effective as a photoacid generator when used in a photoresist material for light of 300 nm or less.

Abstract: An optically active compound of the formula: ##STR1## wherein R is alkyl or alkoxy, R* is an optically active alkyl group, X is alkyl or halogen, Y is a single bond ##STR2## and C* is an asymmetric carbon, is chemically stable and shows or induces large spontaneous polarization and is useful in a chiral liquid crystal composition.

Abstract: A liquid crystal compound of the formula: ##STR1## wherein m and n are independently integers of 1 to 22; k and l are independently integers of 1 to 2; and C* is an asymmetric carbon atom, is chemically stable and can be applied to liquid crystal display devices operable at room temperature.

Abstract: A compound of the formula: ##STR1## (R=H, CH.sub.3 O; n=2 to 5) is effective for improving blood circulation system.