Abstract: A capacitive semiconductor pressure sensor, comprising: a bulk region of semiconductor material; a buried cavity overlying a first part of the bulk region; and a membrane suspended above said buried cavity, wherein, said bulk region and said membrane are formed in a monolithic substrate, and in that said monolithic substrate carries structures for transducing the deflection of said membrane into electrical signals, wherein said bulk region and said membrane form electrodes of a capacitive sensing element, and said transducer structures comprise contact structures in electrical contact with said membrane and with said bulk region.

Abstract: Method for manufacturing a semiconductor pressure sensor, wherein, in a silicon substrate, trenches are dug and delimit walls; a closing layer is epitaxially grown, that closes the trenches at the top and forms a suspended membrane; a heat treatment is performed so as to cause migration of the silicon of the walls and to form a closed cavity underneath the suspended membrane; and structures are formed for transducing the deflection of the suspended membrane into electrical signals.

Abstract: A fluidic cartridge for detecting chemicals, formed by a casing, hermetically housing an integrated device having a plurality of detecting regions to bind with target chemicals; part of a supporting element, bearing the integrated device; a reaction chamber, facing the detecting regions; a sample feeding hole and a washing feeding hole, self-sealingly closed; fluidic paths, which connect the sample feeding and washing feeding holes to the reaction chamber; and a waste reservoir, which may be fluidically connected to the reaction chamber by valve elements that may be controlled from outside. The integrated device is moreover connected to an interface unit carried by the supporting element, electrically connected to the integrated device and including at least one signal processing stage and external contact regions.

Abstract: A cartridge-like chemical sensor is formed by a housing having a base and a cover fixed to the base and provided with an input opening, an output hole and a channel for a gas to be analyzed. The channel extends in the cover between the input opening and the output hole and faces a printed circuit board carrying an integrated circuit having a sensitive region open toward the channel and of a material capable to bind with target chemicals in the gas to be analyzed. A fan is arranged in the housing, downstream of the integrated device, for sucking the gas after being analyzed, and is part of a thermal control system for the integrated circuit.

Abstract: An integrated differential pressure sensor includes, in a monolithic body of semiconductor material, a first face and a second face, a cavity extending at a distance from the first face and delimited therewith by a flexible membrane formed in part by epitaxial material from the monolithic body and in part by annealed epitaxial material from the monolithic body, an access passage in fluid communication with the cavity, and in the flexible membrane at least one transduction element configured so as to convert a deformation of the flexible membrane into electrical signals. The cavity is formed in a position set at a distance from the second face and is delimited at the second face with a portion of the monolithic body.

Abstract: A process for manufacturing a semiconductor wafer including SOI-insulation wells includes forming, in a die region of a semiconductor body, buried cavities and semiconductor structural elements, which traverse the buried cavities and are distributed in the die region. The process moreover includes the step of oxidizing selectively first adjacent semiconductor structural elements, arranged inside a closed region, and preventing oxidation of second semiconductor structural elements outside the closed region, so as to form a die buried dielectric layer selectively inside the closed region.

Abstract: An integrated semiconductor chemical microreactor for real-time polymerase chain reaction (PCR) monitoring, has a monolithic body of semiconductor material; a number of buried channels formed in the monolithic body; an inlet trench and an outlet trench for each buried channel; and a monitoring trench for each buried channel, extending between the inlet and outlet trenches thereof from the top surface of the monolithic body to the respective buried channel. Real-time PCR monitoring is carried out by channeling light beams into the buried channels, possibly through one of the inlet or outlet trenches, whereby the light beams impinge on the fluid therein and collecting the emergent light coming out from the monitoring trench.

Abstract: A process for manufacturing a semiconductor wafer including SOI-insulation wells includes forming, in a die region of a semiconductor body, buried cavities and semiconductor structural elements, which traverse the buried cavities and are distributed in the die region. The process moreover includes the step of oxidizing selectively first adjacent semiconductor structural elements, arranged inside a closed region, and preventing oxidation of second semiconductor structural elements outside the closed region, so as to form a die buried dielectric layer selectively inside the closed region.

Abstract: A process for manufacturing a suspended structure of semiconductor material envisages the steps of: providing a monolithic body of semiconductor material having a front face; forming a buried cavity within the monolithic body, extending at a distance from the front face and delimiting, with the front face, a surface region of the monolithic body, said surface region having a first thickness; carrying out a thickening thermal treatment such as to cause a migration of semiconductor material of the monolithic body towards the surface region and thus form a suspended structure above the buried cavity, the suspended structure having a second thickness greater than the first thickness. The thickening thermal treatment is an annealing treatment.

Abstract: A method for the formation of buried cavities within a semiconductor body envisages the steps of: providing a wafer having a bulk region made of semiconductor material; digging, in the bulk region, trenches delimiting between them walls of semiconductor material; forming a closing layer for closing the trenches in the presence of a deoxidizing atmosphere so as to englobe the deoxidizing atmosphere within the trenches; and carrying out a thermal treatment such as to cause migration of the semiconductor material of the walls and to form a buried cavity. Furthermore, before the thermal treatment is carried out, a barrier layer that is substantially impermeable to hydrogen is formed on the closing layer on top of the trenches.

Abstract: In a process for manufacturing a SOI wafer, the following steps are envisaged: forming, in a monolithic body of semiconductor material having a front face, a buried cavity, which extends at a distance from the front face and delimits, with the front face, a surface region of the monolithic body, the surface region being surrounded by a bulk region and forming a flexible membrane suspended above the buried cavity; forming, through the monolithic body, at least one access passage, which reaches the buried cavity; and filling the buried cavity uniformly with an insulating region. The surface region is continuous and formed by a single portion of semiconductor material, and the buried cavity is contained and completely insulated within the monolithic body; the step of forming at least one access passage is performed after the step of forming a buried cavity.

Abstract: An integrated differential pressure sensor includes, in a monolithic body of semiconductor material, a first face and a second face, a cavity extending at a distance from the first face and delimited therewith by a flexible membrane formed in part by epitaxial material from the monolithic body and in part by annealed epitaxial material from the monolithic body, an access passage in fluid communication with the cavity, and in the flexible membrane at least one transduction element configured so as to convert a deformation of the flexible membrane into electrical signals. The cavity is formed in a position set at a distance from the second face and is delimited at the second face with a portion of the monolithic body.

Abstract: A method for the formation of buried cavities within a semiconductor body envisages the steps of: providing a wafer having a bulk region made of semiconductor material; digging, in the bulk region, trenches delimiting between them walls of semiconductor material; forming a closing layer for closing the trenches in the presence of a deoxidizing atmosphere so as to englobe the deoxidizing atmosphere within the trenches; and carrying out a thermal treatment such as to cause migration of the semiconductor material of the walls and to form a buried cavity. Furthermore, before the thermal treatment is carried out, a barrier layer that is substantially impermeable to hydrogen is formed on the closing layer on top of the trenches.

Abstract: A process for manufacturing an SOI wafer, including the steps of: forming, in a wafer of semiconductor material, cavities delimiting structures of semiconductor material; thinning out the structures through a thermal process; and completely oxidizing the structures.

Abstract: A process for manufacturing an integrated differential pressure sensor includes forming, in a monolithic body of semiconductor material having a first face and a second face, a cavity extending at a distance from the first face and delimiting therewith a flexible membrane, forming an access passage in fluid communication with the cavity, and forming, in the flexible membrane, at least one transduction element configured so as to convert a deformation of the flexible membrane into electrical signals. The cavity is formed in a position set at a distance from the second face and delimits, together with the second face, a portion of the monolithic body. In order to form the access passage, the monolithic body is etched so as to form an access trench extending through it.

Abstract: A process for manufacturing an SOI wafer, including the steps of: forming, in a wafer of semiconductor material, cavities delimiting structures of semiconductor material; thinning out the structures through a thermal process; and completely oxidizing the structures.

Abstract: An electronic microbalance made in a semiconductor body accommodating an oscillating circuit adjacent to a diaphragm. A stack formed by a first electrode, a second electrode, and a piezoelectric region arranged between the first and the second electrode extends above the diaphragm. Any substance that deposits on the stack causes a change in the mass of the microbalance and thus in the resonance frequency of a resonator formed by the microbalance and by the oscillating circuit and can thus be detected electronically. A chemical sensor is obtained by forming a sensitive layer of a material suitable for binding to target chemicals on the stack. The sensitivity of the microbalance can be increased by making the first electrode of molybdenum so as to increase the piezoelectric characteristics of the piezoelectric region.

Abstract: A hybridization detecting device, wherein a probe cell has a body of semiconductor material forming a diaphragm, a first electrode on the diaphragm, a piezoelectric region on the first electrode, a second electrode on the piezoelectric region and a detection layer on the second electrode. The body accommodates a buried cavity downwardly delimiting the diaphragm.

Abstract: The microreactor has a body of semiconductor material; a large area buried channel extending in the body and having walls; a coating layer of insulating material coating the walls of the channel; a diaphragm extending on top of the body and upwardly closing the channel. The diaphragm is formed by a semiconductor layer completely encircling mask portions of insulating material.

Abstract: A method of forming buried cavities in a wafer of monocrystalline semiconductor material with at least one cavity formed in a substrate of monocrystalline semiconductor material by timed TMAH etching silicon; covering the cavity with a material inhibiting epitaxial growth; and growing a monocrystalline epitaxial layer above the substrate and the cavities. Thereby, the cavity is completely surrounded by monocrystalline material. Starting from this wafer, it is possible to form a thin membrane. The original wafer must have a plurality of elongate cavities or channels, parallel and adjacent to one another. Trenches are then excavated in the epitaxial layer as far as the channels, and the dividers between the channels are removed by timed TMAH etching.